制造商是'NEC'
NEC 晶体管 - FET，MOSFET - 单个
(291)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | 晶体管元件材料 | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 操作模式 | 箱体转运 | 晶体管应用 | 极性/通道类型 | JEDEC-95代码 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 反馈上限-最大值 (Crss) | 最高频段 | 环境耗散-最大值 | 功率增益-最小值(Gp) | ||||||||||||||||||
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 | NE325S01-T1B | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | PLASTIC/EPOXY | NE325S01-T1B | UNSPECIFIED | NEC Compound Semiconductor Devices Ltd | 1 | Obsolete | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | 5.23 | 0.02 A | 4 | 砷化镓 | 低噪音 | UNSPECIFIED | 鸥翼 | unknown | X-PXMW-G4 | 不合格 | MICROWAVE | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 3 V | HETERO-JUNCTION | Ku波段 | 11 dB | |||||||||||||||||||||||||
| NE850R599A | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | FLANGE MOUNT | CERAMIC, METAL-SEALED COFIRED | 未说明 | 无 | NE850R599A | RECTANGULAR | NEC Compound Semiconductor Devices Ltd | 1 | Transferred | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | 5.83 | 0.56 A | 2 | 砷化镓 | e0 | 锡铅 | HIGH RELIABILITY | DUAL | FLAT | 未说明 | compliant | R-CDFM-F2 | 不合格 | 99, 2 PIN | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 15 V | 半导体金属 | C 带 | ||||||||||||||||||||
| UPA1763G-E2-A | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ358 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 小概要 | PLASTIC/EPOXY | 未说明 | 150 °C | 无 | 2SJ358 | RECTANGULAR | Renesas Electronics Corporation | 1 | Obsolete | RENESAS ELECTRONICS CORP | 5.33 | 3 A | 3 | SILICON | e0 | EAR99 | Tin/Lead (Sn/Pb) | 其他晶体管 | SINGLE | FLAT | 未说明 | unknown | 3 | R-PSSO-F3 | 不合格 | SMALL OUTLINE, R-PSSO-F3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | P-CHANNEL | 3 A | 0.4 Ω | 6 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 2 W | ||||||||||||||
| 2SK3715 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | FLANGE MOUNT | PLASTIC/EPOXY | 150 °C | 无 | 2SK3715 | RECTANGULAR | Renesas Electronics Corporation | 1 | 不推荐 | RENESAS ELECTRONICS CORP | 5.2 | TO-220AB | 75 A | 3 | SILICON | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8541.29.00.95 | FET 通用电源 | SINGLE | THROUGH-HOLE | compliant | 3 | R-PSFM-T3 | 不合格 | FLANGE MOUNT, R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 75 A | 0.0095 Ω | 300 A | 60 V | 450 mJ | METAL-OXIDE SEMICONDUCTOR | 40 W | ||||||||||||
| 2SJ601-Z | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SJ601-Z-E1 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA1763G-E2 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| UPA1520H | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | PLASTIC/EPOXY | 150 °C | UPA1520H | RECTANGULAR | Renesas Electronics Corporation | 1 | Obsolete | RENESAS ELECTRONICS CORP | 5.76 | 2 A | 10 | SILICON | EAR99 | 8541.29.00.95 | FET 通用电源 | SINGLE | THROUGH-HOLE | unknown | 10 | R-PSIP-T10 | 不合格 | IN-LINE, R-PSIP-T10 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 2 A | 0.17 Ω | 8 A | 30 V | METAL-OXIDE SEMICONDUCTOR | 3.5 W | |||||||||||||||||||
| 2SK2159 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 小概要 | PLASTIC/EPOXY | 未说明 | 150 °C | 无 | 2SK2159 | RECTANGULAR | Renesas Electronics Corporation | 1 | Obsolete | RENESAS ELECTRONICS CORP | 5.31 | 2 A | 3 | SILICON | e0 | EAR99 | Tin/Lead (Sn/Pb) | 闸门保护 | FET 通用电源 | SINGLE | FLAT | 未说明 | unknown | 3 | R-PSSO-F3 | 不合格 | SMALL OUTLINE, R-PSSO-F3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 2 A | 0.5 Ω | 4 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 2 W | |||||||||||||
| UPA1552BH | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | PLASTIC/EPOXY | 未说明 | 无 | UPA1552BH | RECTANGULAR | NEC Electronics Group | 4 | Obsolete | NEC ELECTRONICS CORP | 5.39 | 5 A | 10 | SILICON | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 未说明 | compliant | 10 | R-PSIP-T10 | 不合格 | IN-LINE, R-PSIP-T10 | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.24 Ω | 20 A | 60 V | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||
| 2SJ601 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK739-Z-T1 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 小概要 | PLASTIC/EPOXY | 150 °C | 2SK739-Z-T1 | RECTANGULAR | NEC Electronics America Inc | 1 | Obsolete | NEC ELECTRONICS AMERICA INC | 5.83 | 2 A | 2 | SILICON | 逻辑电平兼容 | SINGLE | 鸥翼 | unknown | R-PSSO-G2 | 不合格 | SMALL OUTLINE, R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.25 Ω | 8 A | 60 V | METAL-OXIDE SEMICONDUCTOR | 20 W | ||||||||||||||||||||||
| UPA508TE-T1-A | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | , | PTSP0006ZA-A6 | 未说明 | 150 °C | 有 | UPA508TE-T1-A | Renesas Electronics Corporation | Obsolete | RENESAS ELECTRONICS CORP | 5.84 | TMM | Renesas | 有 | FET 通用电源 | 未说明 | unknown | 6 | Non-Compliant | Single | N-CHANNEL | 2 A | METAL-OXIDE SEMICONDUCTOR | 0.57 W | |||||||||||||||||||||||||||||
| UPA1919TE-T1 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 150 °C | 无 | UPA1919TE-T1 | Renesas Electronics Corporation | Obsolete | RENESAS ELECTRONICS CORP | 5.86 | 其他晶体管 | unknown | , | Single | 增强型MOSFET | P-CHANNEL | 6 A | METAL-OXIDE SEMICONDUCTOR | 2 W | ||||||||||||||||||||||||||||||||||||
| 2SK193 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | PLASTIC/EPOXY | 125 °C | 2SK193 | RECTANGULAR | NEC Electronics America Inc | 1 | Obsolete | NEC ELECTRONICS AMERICA INC | 5.82 | 0.01 A | 3 | SILICON | SINGLE | THROUGH-HOLE | unknown | R-PSIP-T3 | 不合格 | IN-LINE | SINGLE | DEPLETION MODE | AMPLIFIER | N-CHANNEL | JUNCTION | 0.25 pF | 甚高频段 | 13 dB | ||||||||||||||||||||||||||
| 2SK3576T1B | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Renesas Electronics Corporation | Obsolete | RENESAS ELECTRONICS CORP | 5.84 | unknown | 2SK3576-T1B | |||||||||||||||||||||||||||||||||||||||||||||||
| NE38018 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | PLASTIC/EPOXY | 未说明 | 无 | NE38018 | RECTANGULAR | NEC Electronics America Inc | 1 | Obsolete | NEC ELECTRONICS AMERICA INC | 5.02 | 4 | 砷化镓 | e0 | 锡铅 | LOW NOISE, HIGH RELIABILITY | DUAL | 鸥翼 | 未说明 | compliant | R-PDSO-G4 | 不合格 | 小概要 | SINGLE | DEPLETION MODE | SOURCE | AMPLIFIER | N-CHANNEL | 4 V | HETERO-JUNCTION | S带 | 12.5 dB | |||||||||||||||||||||
| 2SK3221 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| NE651R479A | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | PLASTIC/EPOXY | NE651R479A | RECTANGULAR | NEC Compound Semiconductor Devices Ltd | 1 | Transferred | NEC COMPOUND SEMICONDUCTOR DEVICES LTD | 5.75 | 4 | 砷化镓 | HIGH RELIABILITY | QUAD | FLAT | unknown | R-PQMW-F4 | 不合格 | MICROWAVE | SINGLE | DRAIN | AMPLIFIER | ||||||||||||||||||||||||||||||||
| UPA1919TE-T1-A | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 小概要 | PLASTIC/EPOXY | PTSP0006ZA-A6 | 未说明 | 150 °C | 有 | UPA1919TE-T1-A | RECTANGULAR | Renesas Electronics Corporation | 1 | 不推荐 | RENESAS ELECTRONICS CORP | 5.69 | TMM | 6 A | Renesas | 6 | SILICON | 有 | EAR99 | 8541.21.00.95 | 其他晶体管 | DUAL | 鸥翼 | 未说明 | compliant | 6 | R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | P-CHANNEL | 6 A | 0.084 Ω | 20 V | METAL-OXIDE SEMICONDUCTOR | 2 W | ||||||||||||||
| 2SK3298 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK1292 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK105 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | PLASTIC/EPOXY | 125 °C | 2SK105 | ROUND | NEC Electronics America Inc | 1 | Obsolete | NEC ELECTRONICS AMERICA INC | 5.39 | 0.02 A | 3 | SILICON | BOTTOM | WIRE | unknown | O-PBCY-W3 | 不合格 | CYLINDRICAL | SINGLE | DEPLETION MODE | SWITCHING | N-CHANNEL | TO-92 | JUNCTION | 1.3 pF | |||||||||||||||||||||||||||
| 2SK3714 | NEC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | FLANGE MOUNT | PLASTIC/EPOXY | 未说明 | 无 | 2SK3714 | RECTANGULAR | NEC Electronics Group | 1 | Obsolete | NEC ELECTRONICS CORP | 5.21 | TO-220AB | 50 A | 3 | SILICON | e0 | EAR99 | 锡铅 | 8541.29.00.95 | SINGLE | THROUGH-HOLE | 未说明 | compliant | 3 | R-PSFM-T3 | 不合格 | FLANGE MOUNT, R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | SWITCHING | N-CHANNEL | TO-220AB | 0.022 Ω | 160 A | 60 V | 96 mJ | METAL-OXIDE SEMICONDUCTOR |