制造商是'Microsemi'
Microsemi 晶体管 - IGBT - 单个
(153)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 峰值回流焊温度(摄氏度) | 额定电流 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 元素配置 | 箱体转运 | 输入类型 | 接通延迟时间 | 功率 - 最大 | 晶体管应用 | 极性/通道类型 | 集电极发射器电压(VCEO) | 最大集电极电流 | 反向恢复时间 | JEDEC-95代码 | 电压 - 集射极击穿(最大值) | 接通时间 | 不同 Vge、Ic 时 Vce(on)(最大值) | 连续集电极电流 | 关断时间-标准值(toff) | IGBT类型 | 闸门收费 | 集极脉冲电流(Icm) | Td(开/关)@25°C | 开关能量 | 栅极-发射极电压-最大值 | 栅极-发射极Thr电压-最大值 | 高度 | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||||
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APT25GT120BRDQ2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | 1 | 800V, 25A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.2kV | 347W | 54A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 54A | 1200V | 41 ns | 3.7V @ 15V, 25A | 54A | 186 ns | NPT | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) | 30V | 6.5V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||
APT75GP120B2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | 1 | 600V, 75A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 Variant | 3 | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | 锡银铜 | ULTRA FAST, LOW CONDUCTION LOSS | 1.2kV | 1.042kW | 100A | 3 | Single | COLLECTOR | Standard | 1042W | 电源控制 | N-CHANNEL | 1.2kV | 100A | 1200V | 60 ns | 3.9V @ 15V, 75A | 100A | 359 ns | PT | 320nC | 300A | 20ns/163ns | 1620μJ (on), 2500μJ (off) | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
APT25GP120BDQ1G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 32 Weeks | 1 | 600V, 25A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 低导通损耗 | 1.2kV | 417W | 69A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 69A | 1200V | 26 ns | 3.9V @ 15V, 25A | 69A | 200 ns | PT | 110nC | 90A | 12ns/70ns | 500μJ (on), 440μJ (off) | 30V | 6V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||
APT20GT60BRG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 1 | 400V, 20A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | SILICON | 600V | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 600V | 174W | 43A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 600V | 43A | TO-247AD | 17 ns | 2.5V @ 15V, 20A | 160 ns | NPT | 100nC | 80A | 8ns/80ns | 215μJ (on), 245μJ (off) | 30V | 5V | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||
APT25GT120BRG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 1 | 800V, 25A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.2kV | 347W | 54A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 54A | TO-247AA | 1200V | 41 ns | 3.7V @ 15V, 25A | 54A | 220 ns | NPT | 170nC | 75A | 14ns/150ns | 930μJ (on), 720μJ (off) | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
APT75GN60LDQ3G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | 1 | 400V, 75A, 1 Ω, 15V | 385 ns | 通孔 | 通孔 | TO-264-3, TO-264AA | 10.6g | SILICON | 600V | -55°C~175°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | 锡银铜 | HIGH RELIABILITY | 536W | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 47 ns | 电源控制 | N-CHANNEL | 600V | 155A | 95 ns | 1.85V @ 15V, 75A | 155A | 485 ns | 沟渠现场停车 | 485nC | 225A | 47ns/385ns | 2500μJ (on), 2140μJ (off) | 30V | 6.5V | 5.21mm | 26.49mm | 20.5mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
APT50GT60BRDQ2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | 1 | 400V, 50A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 600V | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 600V | 446W | 110A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 600V | 110A | 22 ns | 46 ns | 2.5V @ 15V, 50A | 110A | 365 ns | NPT | 240nC | 150A | 14ns/240ns | 995μJ (on), 1070μJ (off) | 30V | 5V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||
APT40GT60BRG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 1 | 400V, 40A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 600V | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 锡银铜 | 雪崩 额定 | 600V | 345W | 80A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 600V | 80A | 63 ns | 2.5V @ 15V, 40A | 80A | 353 ns | NPT | 200nC | 160A | 12ns/124ns | 828μJ (off) | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
APT27GA90BD15 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 33 Weeks | 1 | 600V, 14A, 10 Ω, 15V | 通孔 | 通孔 | TO-247-3 | SILICON | 900V | -55°C~150°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 223W | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 223W | 电源控制 | N-CHANNEL | 900V | 48A | TO-247AD | 18 ns | 3.1V @ 15V, 14A | 281 ns | PT | 62nC | 79A | 9ns/98ns | 413μJ (on), 287μJ (off) | 无 | 符合RoHS标准 | |||||||||||||||||||||||
APT15GP90BDQ1G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | 600V, 15A, 4.3 Ω, 15V | 通孔 | 通孔 | TO-247-3 | SILICON | 900V | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | 不用于新设计 | 1 (Unlimited) | 3 | 锡银铜 | 低导通损耗 | 900V | 250W | 未说明 | 43A | 未说明 | 3 | R-PSFM-T3 | 不合格 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 900V | 43A | TO-247AD | 23 ns | 3.9V @ 15V, 15A | 170 ns | PT | 60nC | 60A | 9ns/33ns | 200μJ (off) | 符合RoHS标准 | 无铅 | |||||||||||||||||||
APT150GN60B2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 1 | 400V, 150A, 1 Ω, 15V | 通孔 | 通孔 | TO-247-3 Variant | SILICON | 600V | -55°C~175°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | 锡银铜 | LOW CONDUCTION LOSS, HIGH RELIABILITY | 536W | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 536W | 电源控制 | N-CHANNEL | 600V | 220A | TO-247AD | 154 ns | 1.85V @ 15V, 150A | 575 ns | 沟渠现场停车 | 970nC | 450A | 44ns/430ns | 8.81mJ (on), 4.295mJ (off) | 30V | 6.5V | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||
APT50GN120L2DQ2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | 1 | 800V, 50A, 2.2 Ω, 15V | 320 ns | 通孔 | 通孔 | TO-264-3, TO-264AA | 3 | 10.6g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 543W | 134A | 3 | Single | COLLECTOR | Standard | 28 ns | 电源控制 | N-CHANNEL | 1.2kV | 134A | 1200V | 55 ns | 2.1V @ 15V, 50A | 134A | 600 ns | NPT, Trench Field Stop | 315nC | 150A | 28ns/320ns | 4495μJ (off) | 6.5V | 5.21mm | 26.49mm | 20.5mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||
APT35GN120BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 1 | 800V, 35A, 2.2 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 379W | 未说明 | 94A | 未说明 | 3 | R-PSFM-T3 | 不合格 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 94A | TO-247AD | 1200V | 46 ns | 2.1V @ 15V, 35A | 94A | 465 ns | NPT, Trench Field Stop | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | 30V | 6.5V | 5.31mm | 21.46mm | 16.26mm | 符合RoHS标准 | 无铅 | ||||||||||
APT100GN60LDQ4G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | 1 | 400V, 100A, 1 Ω, 15V | Tin | 通孔 | 通孔 | TO-264-3, TO-264AA | 10.6g | SILICON | 600V | -55°C~175°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | HIGH RELIABILITY | 600V | 625W | 100A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 600V | 229A | 96 ns | 1.85V @ 15V, 100A | 229A | 435 ns | 沟渠现场停车 | 600nC | 300A | 31ns/310ns | 4.75mJ (on), 2.675mJ (off) | 30V | 6.5V | 5.21mm | 26.49mm | 20.5mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
APT80GA60B | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 33 Weeks | 1 | 400V, 47A, 4.7 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 600V | -55°C~150°C TJ | Tube | 1999 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | 纯哑光锡 | 低导通损耗 | 625W | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 600V | 143A | TO-247AD | 52 ns | 2.5V @ 15V, 47A | 143A | 326 ns | PT | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | 30V | 6V | 21.46mm | 16.26mm | 5.31mm | 无 | 符合RoHS标准 | |||||||||||||||||
APT25GN120BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 1 | 800V, 25A, 1 Ω, 15V | 280 ns | 通孔 | 通孔 | TO-247-3 | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 272W | 67A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 22 ns | 电源控制 | N-CHANNEL | 1.2kV | 67A | TO-247AD | 1200V | 39 ns | 2.1V @ 15V, 25A | 560 ns | 沟渠现场停车 | 155nC | 75A | 22ns/280ns | 2.15μJ (off) | 30V | 6.5V | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
APT45GP120BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | 1 | 600V, 45A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | 锡银铜 | 低导通损耗 | 1.2kV | 625W | 100A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 100A | TO-247AD | 1200V | 47 ns | 3.9V @ 15V, 45A | 100A | 230 ns | PT | 185nC | 170A | 18ns/102ns | 900μJ (on), 904μJ (off) | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
APT35GN120L2DQ2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | 1 | 800V, 35A, 2.2 Ω, 15V | 通孔 | 通孔 | TO-264-3, TO-264AA | 3 | 10.6g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | HIGH RELIABILITY | 1.2kV | 379W | 94A | 3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 94A | 1200V | 46 ns | 2.1V @ 15V, 35A | 94A | 465 ns | NPT, Trench Field Stop | 220nC | 105A | 24ns/300ns | 2.315mJ (off) | 6.5V | 5.21mm | 26.49mm | 20.5mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||
APT80GA60LD40 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 33 Weeks | 1 | 400V, 47A, 4.7 Ω, 15V | 通孔 | 通孔 | TO-264-3, TO-264AA | 10.6g | SILICON | 600V | -55°C~150°C TJ | Tube | 1999 | POWER MOS 8™ | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 低导通损耗 | 625W | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 600V | 143A | 22 ns | 52 ns | 2.5V @ 15V, 47A | 143A | 326 ns | PT | 230nC | 240A | 23ns/158ns | 840μJ (on), 751μJ (off) | 5.21mm | 26.49mm | 20.5mm | 无 | 符合RoHS标准 | |||||||||||||||||
APT15GT120BRDQ1G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | 1 | 800V, 15A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | Thunderbolt IGBT® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | 锡银铜 | HIGH SPEED | 1.2kV | 250W | 36A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 36A | TO-247AD | 1200V | 21 ns | 3.6V @ 15V, 15A | 36A | 137 ns | NPT | 105nC | 45A | 10ns/85ns | 585μJ (on), 260μJ (off) | 30V | 6.5V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 含铅 | ||||||||||||
APT50GN60BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 1 | 400V, 50A, 4.3 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 600V | -55°C~175°C TJ | Tube | 1999 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 600V | 366W | 107A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 600V | 107A | TO-247AD | 45 ns | 1.85V @ 15V, 50A | 107A | 400 ns | 沟渠现场停车 | 325nC | 150A | 20ns/230ns | 1185μJ (on), 1565μJ (off) | 30V | 6.5V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||
APT80GA90B | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 32 Weeks | 1 | 600V, 47A, 4.7 Ω, 15V | 通孔 | 通孔 | TO-247-3 | SILICON | 900V | -55°C~150°C TJ | Tube | 1999 | 活跃 | 1 (Unlimited) | 3 | 低导通损耗 | 625W | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 625W | 电源控制 | N-CHANNEL | 900V | 145A | 49 ns | 3.1V @ 15V, 47A | 320 ns | PT | 200nC | 239A | 18ns/149ns | 1652μJ (on), 1389μJ (off) | 30V | 6V | 无 | 符合RoHS标准 | |||||||||||||||||||||||||
APT35GP120BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | 1 | 600V, 35A, 5 Ω, 15V | 通孔 | 通孔 | TO-247-3 | 3 | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | POWER MOS 7® | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | ULTRA FAST, LOW CONDUCTION LOSS | 1.2kV | 543W | 96A | 3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 3.9V | 96A | TO-247AD | 1200V | 36 ns | 3.9V @ 15V, 35A | 222 ns | PT | 150nC | 140A | 16ns/94ns | 750μJ (on), 680μJ (off) | 20V | 6V | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||
APT33GF120LRDQ2G | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 38 Weeks | 800V, 25A, 4.3 Ω, 15V | 1 | 通孔 | 通孔 | TO-264-3, TO-264AA | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 1999 | e1 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.2kV | 357W | 64A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 64A | 1200V | 31 ns | 3V @ 15V, 25A | 355 ns | NPT | 170nC | 75A | 14ns/185ns | 1.315mJ (on), 1.515mJ (off) | 30V | 6.5V | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||
APT33GF120BRG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 1 | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 1.2kV | -55°C~150°C TJ | Tube | 2001 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 快速切换 | 1.2kV | 297W | 33A | 3 | R-PSFM-T3 | Single | COLLECTOR | Standard | 电源控制 | N-CHANNEL | 1.2kV | 52A | TO-247AD | 1200V | 85 ns | 3.2V @ 15V, 25A | 52A | 284 ns | NPT | 170nC | 104A | 25ns/210ns | 2.8mJ (on), 2.8mJ (off) | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 |