制造商是'Microsemi'
Microsemi 晶体管 - FET，MOSFET - 单个
(808)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 终端数量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 电阻 | 端子表面处理 | 附加功能 | 子类别 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 极性 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管技术 | 最大耗散功率(Abs) | 最大结点温度（Tj） | 环境耗散-最大值 | 高度 | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | |||||||||||||||||||||||||||
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 | APT1001R3AN | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | FLANGE MOUNT | METAL | 未说明 | 150 °C | 无 | APT1001R3AN | ROUND | Microsemi Corporation | 1 | Obsolete | ADVANCED POWER TECHNOLOGY INC | 5.61 | 8.5 A | NO | 2 | SILICON | FLANGE MOUNT, O-MBFM-P2 | e0 | Tin/Lead (Sn/Pb) | FET 通用电源 | BOTTOM | PIN/PEG | 未说明 | unknown | O-MBFM-P2 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | TO-3 | 8.5 A | 1.3 Ω | 1000 V | METAL-OXIDE SEMICONDUCTOR | 230 W | 230 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT50M75JFLL | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 500(V) | Military | SOT-227 | -55C to 150C | ±30(V) | Enhancement | 1 | 无 | Screw | 51(A) | Rail/Tube | 功率MOSFET | 4 | N | 460(W) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M16B2FLLG | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M18LVFRG | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT9M100S | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M34BFLLG | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT30M36B2LLG | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M16LLLG | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT6017B2FLLG | Microsemi | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | APT77N60JC3 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 568W Tc | 110 ns | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 77A Tc | -55°C~150°C TJ | Tube | 1997 | e1 | no | 活跃 | 1 (Unlimited) | 4 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 雪崩 额定 | 600V | UPPER | UNSPECIFIED | 77A | 4 | 1 | Single | 增强型MOSFET | 568W | ISOLATED | 18 ns | N-Channel | 35m Ω @ 60A, 10V | 3.9V @ 5.4mA | 13600pF @ 25V | 640nC @ 10V | 27ns | ±20V | 8 ns | 77A | 20V | 0.035Ohm | 600V | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | APT7F120B | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 10V | 1 | 335W Tc | 45 ns | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 7A Tc | -55°C~150°C TJ | Tube | 1997 | e1 | yes | 活跃 | 1 (Unlimited) | 3 | 2.4Ohm | 锡银铜 | 雪崩 额定 | 1.2kV | SINGLE | 6.6A | 3 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 335W | 14 ns | N-Channel | SWITCHING | 2.9 Ω @ 3A, 10V | 5V @ 1mA | 2565pF @ 25V | 80nC @ 10V | 8ns | 1200V | ±30V | 13 ns | 7A | TO-247AB | 30V | 7A | 28A | 575 mJ | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APL1001J | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 10V | 1 | 520W Tc | 60 ns | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 18A Tc | -55°C~150°C TJ | Tube | 1997 | e3 | Obsolete | 1 (Unlimited) | 4 | EAR99 | Matte Tin (Sn) | UL 认证 | 1kV | UPPER | UNSPECIFIED | 18A | 4 | 1 | Single | 增强型MOSFET | 520W | ISOLATED | 14 ns | N-Channel | 600m Ω @ 500mA, 10V | 4V @ 2.5mA | 7200pF @ 25V | 14ns | 1000V | ±30V | 14 ns | 18A | 30V | 0.6Ohm | 72A | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT20M11JVFR | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | 10V | 1 | 700W Tc | 75 ns | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 175A Tc | -55°C~150°C TJ | Tube | 1997 | POWER MOS V® | e1 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | FREDFET | 200V | UPPER | UNSPECIFIED | 175A | 4 | 1 | Single | 增强型MOSFET | 700W | ISOLATED | 20 ns | N-Channel | SWITCHING | 11m Ω @ 500mA, 10V | 4V @ 5mA | 21600pF @ 25V | 180nC @ 10V | 40ns | ±30V | 10 ns | 175A | 30V | 700A | 3600 mJ | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | APT56M50B2 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 10V | 1 | 780W Tc | 100 ns | IN PRODUCTION (Last Updated: 3 weeks ago) | 通孔 | 通孔 | TO-247-3 Variant | 3 | SILICON | 56A Tc | -55°C~150°C TJ | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | 纯哑光锡 | AVALANCHE RATED, HIGH RELIABILITY | 500V | SINGLE | 56A | 3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 780W | DRAIN | 38 ns | N-Channel | SWITCHING | 100m Ω @ 28A, 10V | 5V @ 2.5mA | 8800pF @ 25V | 220nC @ 10V | 45ns | ±30V | 33 ns | 56A | 30V | 500V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT43M60B2 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 10V | 1 | 780W Tc | 145 ns | 通孔 | 通孔 | TO-247-3 Variant | 38.000013g | SILICON | 45A Tc | -55°C~150°C TJ | Tube | 1997 | POWER MOS 8™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | 纯哑光锡 | AVALANCHE RATED, HIGH RELIABILITY | 600V | SINGLE | 43A | 3 | R-PSIP-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 780W | DRAIN | 48 ns | N-Channel | SWITCHING | 150m Ω @ 21A, 10V | 5V @ 2.5mA | 8590pF @ 25V | 215nC @ 10V | 55ns | ±30V | 44 ns | 45A | 30V | 600V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT40SM120B | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 20V | 1 | 273W Tc | 32 ns | OBSOLETE (Last Updated: 2 weeks ago) | 通孔 | 通孔 | TO-247-3 | TO-247 (B) | 41A Tc | -55°C~175°C TJ | Bulk | 1997 | Obsolete | 1 (Unlimited) | 3 | EAR99 | SINGLE | 未说明 | 未说明 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 1 | 增强型MOSFET | 273W | DRAIN | 10 ns | N-Channel | SWITCHING | 100m Ω @ 20A, 20V | 3V @ 1mA (Typ) | 2560pF @ 1000V | 130nC @ 20V | 1200V | +25V, -10V | 41A | 1.7V | 25V | 1.2kV | 2500 mJ | 175°C | 25.96mm | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT18M80B | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 10V | 1 | 500W Tc | 95 ns | IN PRODUCTION (Last Updated: 3 weeks ago) | 通孔 | 通孔 | TO-247-3 | SILICON | 19A Tc | -55°C~150°C TJ | Tube | 1997 | POWER MOS 8™ | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 雪崩 额定 | 800V | SINGLE | 18A | 3 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 500W | DRAIN | 21 ns | N-Channel | SWITCHING | 530m Ω @ 9A, 10V | 5V @ 1mA | 3760pF @ 25V | 120nC @ 10V | 31ns | ±30V | 27 ns | 19A | 30V | 0.53Ohm | 70A | 795 mJ | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT34M120J | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 10V | 1 | 960W Tc | 315 ns | IN PRODUCTION (Last Updated: 4 weeks ago) | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 35A Tc | -55°C~150°C TJ | Tube | 1997 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED | 1.2kV | UPPER | UNSPECIFIED | 34A | 4 | 1 | Single | 增强型MOSFET | 960W | ISOLATED | 100 ns | N-Channel | SWITCHING | 300m Ω @ 25A, 10V | 5V @ 2.5mA | 18200pF @ 25V | 560nC @ 10V | 60ns | 1200V | ±30V | 90 ns | 35A | 30V | 0.29Ohm | 2700 mJ | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT53F80J | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 33 Weeks | 10V | 1 | 960W Tc | 435 ns | IN PRODUCTION (Last Updated: 3 weeks ago) | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 57A Tc | -55°C~150°C TJ | Tube | 1997 | POWER MOS 8™ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 雪崩 额定 | 800V | UPPER | UNSPECIFIED | 53A | 4 | 1 | Single | 增强型MOSFET | 960W | ISOLATED | 100 ns | N-Channel | SWITCHING | 110m Ω @ 43A, 10V | 5V @ 5mA | 17550pF @ 25V | 570nC @ 10V | 145ns | ±30V | 125 ns | 57A | 30V | 325A | 3725 mJ | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT41F100J | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 10V | 1 | 960W Tc | 235 ns | IN PRODUCTION (Last Updated: 4 weeks ago) | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 42A Tc | -55°C~150°C TJ | Tube | 1997 | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, UL RECOGNIZED | 1kV | UPPER | UNSPECIFIED | 41A | 4 | 1 | Single | 增强型MOSFET | 960W | ISOLATED | 55 ns | N-Channel | SWITCHING | 210m Ω @ 33A, 10V | 5V @ 5mA | 18500pF @ 25V | 570nC @ 10V | 55ns | 1000V | ±30V | 55 ns | 41A | 30V | 0.2Ohm | 260A | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| APT1204R7BFLLG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 1 | 135W Tc | 20 ns | 通孔 | 通孔 | TO-247-3 | SILICON | 3.5A Tc | -55°C~150°C TJ | Tube | 1997 | POWER MOS 7® | e1 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | 锡银铜 | 1.2kV | SINGLE | 3.5A | 3 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 1 | 增强型MOSFET | 135W | DRAIN | 7 ns | N-Channel | SWITCHING | 4.7 Ω @ 1.75A, 10V | 5V @ 1mA | 715pF @ 25V | 31nC @ 10V | 2ns | 1200V | ±30V | 24 ns | 3.5A | TO-247AD | 30V | 1.2kV | 425 mJ | 150°C | 25.96mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | APT13F120B | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 10V | 1 | 625W Tc | 85 ns | 通孔 | 通孔 | TO-247-3 | 38.000013g | SILICON | 14A Tc | -55°C~150°C TJ | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 1.2Ohm | Tin (Sn) | 雪崩 额定 | 1.2kV | SINGLE | 13A | 3 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 625W | 26 ns | N-Channel | SWITCHING | 1.4 Ω @ 7A, 10V | 5V @ 1mA | 4765pF @ 25V | 145nC @ 10V | 15ns | 1200V | ±30V | 24 ns | 14A | TO-247AB | 30V | 50A | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT32F120J | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 10V | 1 | 960W Tc | 315 ns | Tin | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 33A Tc | -55°C~150°C TJ | Tube | POWER MOS 8™ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | AVALANCHE RATED, UL RECOGNIZED, HIGH RELIABILITY | 1.2kV | UPPER | UNSPECIFIED | 32A | 4 | 1 | Single | 增强型MOSFET | 960W | ISOLATED | 100 ns | N-Channel | SWITCHING | 320m Ω @ 25A, 10V | 5V @ 2.5mA | 18200pF @ 25V | 560nC @ 10V | 60ns | 1200V | ±30V | 90 ns | 33A | 30V | 0.32Ohm | 1.2kV | 2700 mJ | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| APL602J | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 12V | 1 | 565W Tc | 58 ns | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | 30.000004g | SILICON | 43A Tc | -55°C~150°C TJ | Tube | 1997 | e1 | 活跃 | 1 (Unlimited) | 4 | 锡银铜 | UL 认证 | 600V | UPPER | UNSPECIFIED | 43A | 4 | 1 | Single | 增强型MOSFET | 565W | ISOLATED | 13 ns | N-Channel | AMPLIFIER | 125m Ω @ 21.5A, 12V | 4V @ 2.5mA | 9000pF @ 25V | 24ns | ±30V | 14 ns | 43A | 30V | 600V | 3000 mJ | 9.6mm | 38.2mm | 25.4mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| APT5018BLLG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 1 | 300W Tc | 18 ns | 通孔 | 通孔 | TO-247-3 | SILICON | 27A Tc | -55°C~150°C TJ | Tube | 1997 | POWER MOS 7® | e1 | Obsolete | 1 (Unlimited) | 3 | EAR99 | 锡银铜 | 500V | SINGLE | 27A | 3 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 300W | DRAIN | 9 ns | N-Channel | SWITCHING | 180m Ω @ 13.5A, 10V | 5V @ 1mA | 2596pF @ 25V | 58nC @ 10V | 4ns | ±30V | 2 ns | 27A | TO-247AD | 30V | 无 | 符合RoHS标准 | 无铅 |