N/A

-

6 Weeks

20 ns

Tin

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

84.99187mg

SILICON

2

-55°C~150°C TJ

Tape & Reel (TR)

2010

e3

活跃

1 (Unlimited)

8

EAR99

DUAL

鸥翼

260

40

TC6320

2

增强型MOSFET

10 ns

N and P-Channel

SWITCHING

7 Ω @ 1A, 10V

2V @ 1mA

110pF @ 25V

15ns

N-CHANNEL AND P-CHANNEL

15 ns

-2A

2V

7Ohm

200V

METAL-OXIDE SEMICONDUCTOR

Standard

1.65mm

4.9mm

3.9mm

无

无SVHC

ROHS3 Compliant

N/A

-

16 Weeks

20 ns

Tin

表面贴装

表面贴装

8-VDFN Exposed Pad

8

37.393021mg

SILICON

2

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

活跃

1 (Unlimited)

8

EAR99

DUAL

260

40

TC6320

2

增强型MOSFET

10 ns

N and P-Channel

SWITCHING

7 Ω @ 1A, 10V

2V @ 1mA

110pF @ 25V

15ns

N-CHANNEL AND P-CHANNEL

15 ns

5.2A

7Ohm

200V

METAL-OXIDE SEMICONDUCTOR

Standard

1.37mm

4.89mm

3.91mm

无

ROHS3 Compliant

N/A

-

17 Weeks

20 ns

Tin

表面贴装

表面贴装

56-VFQFN Exposed Pad

56

191.387631mg

SILICON

6

-55°C~150°C TJ

Tray

2012

e4

活跃

3 (168 Hours)

56

EAR99

镍钯金

QUAD

260

40

COMPLEX

12

增强型MOSFET

10 ns

6 N and 6 P-Channel

SWITCHING

8 Ω @ 1A, 10V

2.4V @ 1mA

50pF @ 25V

15ns

200V

N-CHANNEL AND P-CHANNEL

15 ns

8Ohm

-200V

METAL-OXIDE SEMICONDUCTOR

Standard

无

ROHS3 Compliant

N/A

-

16 Weeks

10 ns

表面贴装

表面贴装

8-VDFN Exposed Pad

37.393021mg

SILICON

1

-55°C~150°C TJ

Tray

2013

e3

活跃

3 (168 Hours)

8

EAR99

3.5Ohm

哑光锡

低阈值

无铅

260

40

R-PDSO-N8

不合格

2

250V

Dual

11A

DRAIN

10 ns

2 N-Channel (Dual)

SWITCHING

3.5 Ω @ 1A, 0V

1000pF @ 25V

7.04nC @ 1.5V

20ns

20 ns

1.1A

20V

METAL-OXIDE SEMICONDUCTOR

耗尽模式

ROHS3 Compliant

N/A

-

3 Weeks

表面贴装

表面贴装

12-VFDFN Exposed Pad

12

SILICON

4

-55°C~150°C TJ

Tape & Reel (TR)

2013

e4

活跃

2 (1 Year)

12

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

DUAL

无铅

260

40

不合格

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

增强型MOSFET

2 N and 2 P-Channel

SWITCHING

6 Ω @ 1A, 10V

2.4V @ 1mA

56pF @ 25V

200V

N-CHANNEL AND P-CHANNEL

7Ohm

200V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

N/A

-

5 Weeks

20 ns

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

84.99187mg

SILICON

2

-55°C~150°C TJ

Tape & Reel (TR)

2013

e3

活跃

1 (Unlimited)

8

EAR99

Matte Tin (Sn) - annealed

低阈值

鸥翼

260

40

不合格

SINGLE WITH BUILT-IN DIODE

2

增强型MOSFET

10 ns

2 N-Channel (Dual)

SWITCHING

6 Ω @ 500mA, 10V

2V @ 1mA

125pF @ 25V

10ns

10 ns

1A

20V

6Ohm

240V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

无铅

N/A

-

14 Weeks

20 ns

Tin

表面贴装

表面贴装

12-VFDFN Exposed Pad

12

SILICON

4

-55°C~150°C TJ

Tape & Reel (TR)

2004

e4

活跃

1 (Unlimited)

12

EAR99

Nickel/Palladium/Gold (Ni/Pd/Au)

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

DUAL

无铅

260

40

不合格

SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

增强型MOSFET

10 ns

2 N and 2 P-Channel

SWITCHING

10 Ω @ 1A, 10V

2.4V @ 1mA

52pF @ 25V

15ns

200V

N-CHANNEL AND P-CHANNEL

15 ns

7Ohm

200V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

无铅

N/A

-

3 Weeks

20 ns

Tin

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

84.99187mg

SILICON

2

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

活跃

1 (Unlimited)

8

EAR99

低阈值

DUAL

鸥翼

260

40

2

增强型MOSFET

10 ns

N and P-Channel

SWITCHING

7 Ω @ 1A, 10V

2V @ 1mA

110pF @ 25V

15ns

N-CHANNEL AND P-CHANNEL

15 ns

2A

20V

7Ohm

200V

METAL-OXIDE SEMICONDUCTOR

Standard

1.65mm

4.9mm

3.9mm

无

ROHS3 Compliant

N/A

-

6 Weeks

17.2 ns

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

84.99187mg

SILICON

2

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

活跃

1 (Unlimited)

8

EAR99

Matte Tin (Sn) - annealed

鸥翼

260

40

TC621

不合格

2

Dual

增强型MOSFET

2.5 ns

N and P-Channel

SWITCHING

4 Ω @ 2A, 10V

2V @ 1mA

120pF @ 25V

2.3ns

150V

N-CHANNEL AND P-CHANNEL

11.3 ns

36A

20V

5Ohm

-150V

METAL-OXIDE SEMICONDUCTOR

Standard

1.65mm

4.9mm

3.8mm

ROHS3 Compliant

N/A

-

7 Weeks

15 ns

表面贴装

表面贴装

8-SOIC (0.154, 3.90mm Width)

8

84.99187mg

SILICON

2

-55°C~150°C TJ

Tape & Reel (TR)

2008

e3

活跃

1 (Unlimited)

8

Matte Tin (Sn) - annealed

快速开关

鸥翼

260

40

不合格

2

Dual

增强型MOSFET

10 ns

N and P-Channel

AMPLIFIER

60 Ω @ 50mA, 10V

4V @ 1mA

55pF @ 25V

10ns

N-CHANNEL AND P-CHANNEL

10 ns

16A

20V

350A

500V

METAL-OXIDE SEMICONDUCTOR

Standard

1.75mm

4.9mm

3.9mm

ROHS3 Compliant

N/A

-

7 Weeks

2A Ta

表面贴装

8-VDFN Exposed Pad

YES

SILICON

2

-55°C~175°C

Tape & Reel (TR)

活跃

1 (Unlimited)

8

DUAL

无铅

TS 16949

R-PDSO-N8

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

增强型MOSFET

DRAIN

N and P-Channel

SWITCHING

7 Ω @ 1A, 10V, 8 Ω @ 1A, 10V

2V @ 1mA, 2.4V @ 1mA

110pF @ 25V 200pF @ 25V

200V

N-CHANNEL AND P-CHANNEL

7Ohm

200V

METAL-OXIDE SEMICONDUCTOR

逻辑电平门

ROHS3 Compliant

N/A

-

20 Weeks

20 ns

表面贴装

表面贴装

56-VFQFN Exposed Pad

191.387631mg

SILICON

6

-55°C~150°C TJ

Tape & Reel (TR)

2012

yes

活跃

3 (168 Hours)

56

QUAD

无铅

COMPLEX

12

增强型MOSFET

10 ns

6 N and 6 P-Channel

SWITCHING

8 Ω @ 1A, 10V

2.4V @ 1mA

50pF @ 25V

15ns

200V

N-CHANNEL AND P-CHANNEL

15 ns

3.2A

8Ohm

200V

METAL-OXIDE SEMICONDUCTOR

Standard

ROHS3 Compliant

N/A

-

活跃

238A (Tc)

MSCSM70

700 V

700 V

40 ns

1.9 V

674 W

N-Channel

+ 125 C

- 10 V, 25 V

- 40 C

1

螺钉安装

Microchip

Microchip Technology / Atmel

9.5 mOhms

Details

50 ns

238 A

Discrete Semiconductor Modules

底座安装

Module

SP4

微芯片技术

Tube

-40°C ~ 175°C (TJ)

Bulk

-

Phase Leg

Discrete Semiconductor Modules

SiC

674W (Tc)

2 N Channel (Phase Leg)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

9000pF @ 700V

430nC @ 20V

35 ns

700V

Silicon Carbide (SiC)

功率MOSFET模块

1.5 V at 100 A

Discrete Semiconductor Modules

N/A

-

活跃

538A (Tc)

MSCSM70

700 V

700 V

N-Channel

+ 125 C

- 10 V, + 25 V

- 40 C

1

螺钉安装

Microchip

Microchip Technology / Atmel

2.5 mOhms

Details

538 A

Discrete Semiconductor Modules

底座安装

Module

D3

微芯片技术

Box

-

Bulk

-

Phase Leg

Discrete Semiconductor Modules

SiC

-

-

-

-

-

-

700V

-

功率MOSFET模块

1.5 V

Discrete Semiconductor Modules

N/A

-

活跃

55A (Tc)

MSCSM120

1200 V

1200 V

30 ns

1.8 V

245 W

N-Channel

+ 125 C

- 10 V, + 25 V

- 40 C

1

螺钉安装

Microchip

Microchip Technology / Atmel

50 mOhms

Details

50 ns

55 A

Discrete Semiconductor Modules

底座安装

Module

SP1F

微芯片技术

Tube

-40°C ~ 175°C (TJ)

Bulk

-

Phase Leg

Discrete Semiconductor Modules

SiC

245W (Tc)

2 N Channel (Phase Leg)

50mOhm @ 40A, 20V

2.7V @ 1mA

1990pF @ 1000V

137nC @ 20V

30 ns

1200V (1.2kV)

Silicon Carbide (SiC)

功率MOSFET模块

1.5 V at 15 A

Discrete Semiconductor Modules

N/A

-

活跃

241A (Tc)

MSCSM70

700 V

700 V

40 ns

1.9 V

690 W

N-Channel

+ 125 C

- 10 V, 25 V

- 40 C

1

螺钉安装

Microchip

Microchip Technology / Atmel

9.5 mOhms

Details

50 ns

241 A

Discrete Semiconductor Modules

底座安装

Module

SP3F

微芯片技术

Tube

-40°C ~ 175°C (TJ)

Bulk

-

Phase Leg

Discrete Semiconductor Modules

SiC

690W (Tc)

2 N Channel (Phase Leg)

9.5mOhm @ 80A, 20V

2.4V @ 8mA

9000pF @ 700V

430nC @ 20V

35 ns

700V

Silicon Carbide (SiC)

功率MOSFET模块

1.5 V at 100 A

Discrete Semiconductor Modules

N/A

-

MSCC60

81A (Tc)

活跃

600 V

1

螺钉安装

Microchip

Microchip Technology / Atmel

Details

Discrete Semiconductor Modules

底座安装

Module

SP4

微芯片技术

Tube

-

Tube

-

Rectifier Diode Module

Discrete Semiconductor Modules

Si

-

2 N-Channel

-

-

-

-

600V

Standard

功率MOSFET模块

Discrete Semiconductor Modules

N/A

-

活跃

124A (Tc)

MSCSM70

700 V

700 V

40 ns

1.9 V

365 W

N-Channel

+ 125 C

- 10 V, + 25 V

- 40 C

1

螺钉安装

Microchip

微芯片技术

19 mOhms

Details

50 ns

124 A

Discrete Semiconductor Modules

底座安装

Module

SP3F

微芯片技术

Tube

-40°C ~ 175°C (TJ)

Bulk

-

Phase Leg

Discrete Semiconductor Modules

SiC

365W (Tc)

2 N Channel (Phase Leg)

19mOhm @ 40A, 20V

2.4V @ 4mA

4500pF @ 700V

215nC @ 20V

35 ns

700V

Silicon Carbide (SiC)

功率MOSFET模块

1.5 V at 50 A

Discrete Semiconductor Modules

N/A

-

活跃

108A (Tc)

MSCM20

200 V

+ 125 C

- 40 C

1

Microchip

Microchip Technology / Atmel

10 mOhms

Details

Discrete Semiconductor Modules

底座安装

Module

SP3X

微芯片技术

Bulk

-40°C ~ 125°C (Tc)

Tube

-

三相

Discrete Semiconductor Modules

Si

3-Phase Bridge

341W (Tc)

6 N-Channel (3-Phase Bridge)

9.7mOhm @ 81A, 10V

5V @ 250μA

10700pF @ 50V

161nC @ 10V

200V

Standard

功率MOSFET模块

Discrete Semiconductor Modules

N/A

-

活跃

173A (Tc)

MSCSM120

173

1200 V

1200 V

30 ns

1.8 V

745 W

N-Channel

+ 125 C

- 10 V, + 25 V

- 40 C

1

螺钉安装

Microchip

Microchip Technology / Atmel

16 mOhms

Details

50 ns

173 A

Discrete Semiconductor Modules

底座安装

Module

SP1F

微芯片技术

Tube

-40°C ~ 175°C (TJ)

Bulk

-

Phase Leg

Discrete Semiconductor Modules

SiC

745

745W (Tc)

2 N Channel (Phase Leg)

16mOhm @ 80A, 20V

2.8V @ 2mA

6040pF @ 1000V

464nC @ 20V

30 ns

1200V (1.2kV)

Silicon Carbide (SiC)

功率MOSFET模块

1.5 V at 60 A

Discrete Semiconductor Modules

N/A

-

-40C to 85C

无

2

Compliant

400 ns

RECTANGULAR

Microsemi Corporation

Obsolete

MICROSEMI CORP

5.84

30 A

APTC90DSK12T1G

有

150 °C

未说明

UNSPECIFIED

FLANGE MOUNT

FLANGE MOUNT, R-XUFM-X10

Industrial grade

Chassis Mount, Screw

CSON

NO

1

10

SILICON

5(mm)

EAR99

150 °C

-40 °C

AVALANCHE RATED, ULTRA-LOW RESISTANCE

FET 通用电源

250 W

UPPER

UNSPECIFIED

未说明

compliant

12

R-XUFM-X10

不合格

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

增强型MOSFET

250 W

ISOLATED

70 ns

SWITCHING

20 ns

900 V

N-CHANNEL

30 A

20 V

30 A

0.12 Ω

INDUSTRIALC

75 A

6.8 nF

900 V

1940 mJ

METAL-OXIDE SEMICONDUCTOR

250 W

120 mΩ

7(mm)

1.4(mm)

无

N/A

-

FLANGE MOUNT

1

UNSPECIFIED

未说明

150 °C

有

APTC80DSK29T3G

RECTANGULAR

Microsemi Corporation

2

Obsolete

MICROSEMI CORP

5.62

15 A

Axial

NO

Axial

25

SILICON

FLANGE MOUNT, R-XUFM-X25

-65°C ~ 175°C

Tape & Reel (TR)

Military, MIL-PRF-55182/01, RNC55

0.094 Dia x 0.250 L (2.39mm x 6.35mm)

±0.1%

e1

活跃

2

±25ppm/°C

180 kOhms

锡银铜

Metal Film

0.125W, 1/8W

雪崩 额定

UPPER

UNSPECIFIED

未说明

unknown

25

R-XUFM-X25

不合格

S (0.001%)

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

增强型MOSFET

ISOLATED

SWITCHING

N-CHANNEL

0.29 Ω

60 A

800 V

670 mJ

METAL-OXIDE SEMICONDUCTOR

Military, Moisture Resistant, Weldable

--

N/A

-

FLANGE MOUNT

1

UNSPECIFIED

未说明

150 °C

有

APTC80DDA29T3G

RECTANGULAR

Microsemi Corporation

2

Obsolete

MICROSEMI CORP

5.62

15 A

Axial

NO

Axial

25

SILICON

FLANGE MOUNT, R-XUFM-X25

-65°C ~ 175°C

Bulk

Military, MIL-R-10509/7, RN55

0.090 Dia x 0.240 L (2.29mm x 6.10mm)

±1%

e1

活跃

2

±100ppm/°C

3.09 Ohms

锡银铜

Metal Film

0.125W, 1/8W

雪崩 额定

FET 通用电源

UPPER

UNSPECIFIED

未说明

unknown

25

R-XUFM-X25

不合格

--

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

增强型MOSFET

ISOLATED

SWITCHING

N-CHANNEL

15 A

0.29 Ω

60 A

800 V

670 mJ

METAL-OXIDE SEMICONDUCTOR

156 W

Flame Retardant Coating, Military, Moisture Resistant, Safety

--

N/A

-

FLANGE MOUNT

1

UNSPECIFIED

未说明

150 °C

有

APTM50DUM17G

RECTANGULAR

Microsemi Corporation

2

Obsolete

MICROSEMI CORP

5.59

180 A

NO

7

SILICON

FLANGE MOUNT, R-XUFM-X7

*

e1

有

活跃

EAR99

锡银铜

雪崩 额定

UPPER

UNSPECIFIED

未说明

compliant

7

R-XUFM-X7

不合格

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

增强型MOSFET

ISOLATED

SWITCHING

N-CHANNEL

0.02 Ω

720 A

500 V

3000 mJ

METAL-OXIDE SEMICONDUCTOR

N/A

-

O-Z Gedney

3

Compliant

100 ns

150 °C

有

Obsolete

MICROSEMI CORP

5.84

Chassis Mount, Screw

1

CGA75625

EAR99

150 °C

-40 °C

其他晶体管

250 W

compliant

250 W

21 ns

30 ns

600 V

36 A

20 V

49 A

7.2 nF

METAL-OXIDE SEMICONDUCTOR

250 W

83 mΩ

无