制造商是'Microchip'
Microchip 二极管 - 射频
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图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 二极管元件材料 | 终端数量 | 厂商 | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 应用 | 附加功能 | HTS代码 | 子类别 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 引脚数量 | 参考标准 | 终端样式 | JESD-30代码 | 资历状况 | 配置 | 负载电容 | 元素配置 | 速度 | 二极管类型 | 反向泄漏电流@ Vr | 不同 If 时电压 - 正向 (Vf) | 箱体转运 | 正向电流 | 工作温度 - 结点 | 最大浪涌电流 | 输出电流-最大值 | 电压 - 直流逆向(Vr)(最大值) | 平均整流电流(Io) | 正向电压 | 最大反向电压(DC) | 平均整流电流 | 产品类别 | 相位的数量 | 反向恢复时间 | 峰值反向电流 | 最大重复反向电压(Vrrm) | Rep Pk反向电压-最大值 | JEDEC-95代码 | 电容@Vr, F | 峰值非恢复性浪涌电流 | 最大非代表Pk前进电流 | 二极管配置 | 反向电流-最大值 | 恢复时间 | 电压 - 峰值反向(最大值) | 重复峰值反向电压 | 反向恢复时间-最大值 | 反向测试电压 | 输出电平 | 反向恢复时间(trr) | 电阻@If,F | 二极管电容-最大值 | 产品 | 少数载流子寿命 | 二极管正向电阻-最大值 | Vf-正向电压 | 产品类别 | 高度 | 长度 | 宽度 | 辐射硬化 | ||||||||||||||||||||||||||||||||||||||||||||
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![]() | MPP4201A-206-HS | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Microchip | 微芯片技术 | N | PIN 二极管 | 525 | Reel | Diodes & Rectifiers | Si | PIN 二极管 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5767 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Microchip | 微芯片技术 | N | Tray | 400 mW | 活跃 | PIN 二极管 | Axial | Axial | 微芯片技术 | 1 | -65°C ~ 175°C | 1N5767 | Diodes & Rectifiers | Si | PIN - Single | 4 | 0.4pF @ 100V, 1MHz | 100V | 75 | 2.5Ohm @ 100mA, 100MHz | PIN 二极管 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MSASC25W100KV | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 MHz | 表面贴装 | Bulk | 活跃 | 1 | Microchip | 微芯片技术 | N | Schottky Diodes & Rectifiers | 表面贴装 | ThinKey™2 | ThinKey™2 | 微芯片技术 | SMD | -30 to 85 °C | Tray | - | Temperature Compensated Crystal Oscillator (TCXO) | Diodes & Rectifiers | Schottky | 4 | 10 pF | Fast Recovery =< 500ns, > 200mA (Io) | 500 µA @ 100 V | 910 mV @ 25 A | -65°C ~ 175°C | 100 V | 25A | - | 削波正弦波 | Schottky Diodes & Rectifiers | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HUM2020B | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 W | 活跃 | Axial | Axial | 微芯片技术 | Tape & Reel (TR) | -65°C ~ 175°C | - | PIN - Single | 4pF @ 100V, 1MHz | 2000V | 200mOhm @ 500mA, 4MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | JANS1N5711UB | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Production (Last Updated: 2 months ago) | 有 | 活跃 | MICROSEMI CORP | R-CDSO-N3 | 5.47 | 1 | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | 小概要 | 未说明 | Bulk | 活跃 | Non-Compliant | 表面贴装 | 表面贴装 | 4-SMD, No Lead | YES | 3 | UB | SILICON | 3 | 微芯片技术 | JANS1N5711UB | Military, MIL-PRF-19500/444 | e4 | 有 | EAR99 | Gold (Au) - with Nickel (Ni) barrier | 150 °C | -65 °C | 8541.10.00.70 | DUAL | 无铅 | 未说明 | compliant | 3 | MIL-19500/444 | R-CDSO-N3 | Qualified | SINGLE | 共阴极 | Small Signal =< 200mA (Io), Any Speed | 接收电极 | 200 nA @ 50 V | 1 V @ 15 mA | -65°C ~ 150°C | 0.033 A | 50 V | 1 V | 70 V | 50 V | 2pF @ 0V, 1MHz | 无 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N6638U | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2.5 | 25-400-30/200-psi | Lower Mount | -30 Hg-200 psi | NOSHOK | Bulk | 活跃 | 35 nA | + 175 C | 0.068925 oz | - 65 C | 1 | SMD/SMT | 微芯片技术 | 300 mA | 125 V | N | HERMETIC SEALED, GLASS, D-5D, 2 PIN | 长式 | GLASS | -65 °C | 200 °C | 未说明 | 无 | 0.75 W | ROUND | 1 | 活跃 | MICROSEMI CORP | 1.1 V | 1.65 | Diodes - General Purpose, Power, Switching | 表面贴装 | SQ-MELF, E | YES | D-5B | SILICON | 2 | 微芯片技术 | 1/4 NPT | Bulk | Military, MIL-PRF-19500/578 | e0 | 无 | EAR99 | 锡铅 | 冶金结合 | 8541.10.00.70 | Diodes & Rectifiers | Standard | END | 环绕 | 未说明 | unknown | 2 | O-LELF-R2 | 不合格 | Single | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 500 nA @ 150 V | 1.1 V @ 200 mA | ISOLATED | -65°C ~ 175°C | 2.5 A | 0.3 A | 125 V | 300mA | 4.5 | 125 V | 2.5pF @ 0V, 1MHz | 2.5 A | 0.5 µA | 4.5 ns | 125 | 0.0045 µs | 4.5 ns | 开关二极管 | 1.1 V | Diodes - General Purpose, Power, Switching | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5711 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | - | 活跃 | 200 nA | + 150 C | 0.004833 oz | - 65 C | 1 | 通孔 | 50 V | Microchip | Microchip Technology / Atmel | 33 mA | N | Schottky Diodes & Rectifiers | 通孔 | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | 微芯片技术 | Bulk | Bulk | - | Diodes & Rectifiers | Schottky | Single | Small Signal =< 200mA (Io), Any Speed | 200 nA @ 50 V | 1 V @ 15 mA | -65°C ~ 150°C | 70 V | 33mA | 2pF @ 0V, 1MHz | Single | 50 | 肖特基二极管 | 1 V | Schottky Diodes & Rectifiers | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | JANTXV1N6659 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | PILZ | Bulk | 活跃 | 0.010582 oz | 1 | 通孔 | Microchip / Microsemi | N | ISOLATED TO-254AA, 3 PIN | FLANGE MOUNT | UNSPECIFIED | 未说明 | 200 °C | 无 | SQUARE | 2 | 活跃 | MICROSEMI CORP | 1.2 V | 5.41 | TO-254AA | Rectifiers | 通孔 | TO-254-3, TO-254AA (Straight Leads) | NO | TO-254 | SILICON | 3 | 微芯片技术 | 313116 | Tray | - | e0 | Tin/Lead (Sn/Pb) | 超快恢复能力 | 8541.10.00.80 | Diodes & Rectifiers | Standard | SINGLE | PIN/PEG | 未说明 | compliant | 3 | MIL-19500/616B | 焊针 | S-XSFM-P3 | Qualified | COMMON CATHODE, 2 ELEMENTS | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 10 µA @ 200 V | 1.2 V @ 20 A | ISOLATED | - | 15 A | 200 V | 15A | 1 | 200 V | TO-254AA | 150pF @ 10V, 1MHz | 150 A | 0.035 µs | 35 ns | Rectifiers | Rectifiers | 20.19 mm | 13.72 mm | 6.6 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UES1104HR2 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 | 40-410-30-psi | Center Back Mount | 0-30 psi | NOSHOK | Bulk | 活跃 | 10 uA | 1 | SMD/SMT | 微芯片技术 | N | 长式 | GLASS | 未说明 | 无 | ROUND | 1 | 活跃 | MICROSEMI CORP | 5.33 | Rectifiers | 通孔 | A, Axial | NO | A, Axial | SILICON | 2 | 微芯片技术 | 1/2 NPT | Bulk | - | e0 | 无 | EAR99 | 快速恢复整流器 | 锡铅 | 超快恢复 | HIGH RELIABILITY | 8541.10.00.80 | Diodes & Rectifiers | Standard | AXIAL | WIRE | 未说明 | unknown | O-LALF-W2 | 不合格 | Single | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 1.25 V @ 1 A | ISOLATED | - | 20 A | 2 A | 200 V | 2A | 1 | 50 | - | 20 A | Single | 50 ns | 200 | 0.05 µs | 50 ns | Rectifiers | 1 V | Rectifiers | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UPS160E3/TR7 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | MICROSEMI CORP | S-PDSO-G1 | 5.42 | 0.6 V | 1 | 125 °C | -55 °C | PLASTIC/EPOXY | SQUARE | 未说明 | 小概要 | Tape & Reel (TR) | UPS160 | 活跃 | 3000 | 微芯片技术 | Details | Schottky Diodes & Rectifiers | 表面贴装 | DO-216AA | YES | Powermite 1 (DO216-AA) | 1 | 微芯片技术 | UPS160E3/TR7 | Reel | - | e3 | EAR99 | Matte Tin (Sn) | 8541.10.00.80 | DUAL | 鸥翼 | 未说明 | compliant | S-PDSO-G1 | 不合格 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 100 µA @ 60 V | 600 mV @ 1 A | -55°C ~ 125°C | 1 A | 60 V | 1A | 60 V | DO-216AA | 55pF @ 4V, 1MHz | 50 A | Schottky Diodes & Rectifiers | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | UPP1004/TR7 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | 活跃 | MICROSEMI CORP | S-XSSO-G1 | 5.18 | 1 | UNSPECIFIED | SQUARE | 小概要 | Tape & Reel (TR) | UPP1004 | 2.5 W | 活跃 | 3000 | 微芯片技术 | N | PIN 二极管 | DO-216AA | YES | DO-216 | SILICON | 1 | 微芯片技术 | UPP1004/TR7 | -55°C ~ 150°C (TJ) | Reel | POWERMITE® | 无 | EAR99 | SWITCHING | LOW DISTORTION | 8541.10.00.80 | Diodes & Rectifiers | SINGLE | 鸥翼 | compliant | S-XSSO-G1 | SINGLE | 针形二极管 | ANODE | 1.6pF @ 100V, 1MHz | 100V | 1Ohm @ 10mA, 100MHz | 1.6 pF | 3.5 µs | 1 Ω | PIN 二极管 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 1N5825 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | MICROSEMI CORP | O-XALF-W2 | 1.95 | Schottky Diodes & Rectifiers Schottky Rectifier, 5A, 350v, 1470pF | 0.52 V | 1 | 125 °C | -65 °C | UNSPECIFIED | ROUND | 长式 | 未说明 | Bulk | 1N5825 | 活跃 | 40 V | 10 mA | - | + 125 C | 0.007654 oz | - 65 C | 1 | 通孔 | 40 V | 微芯片技术 | 5 A | Details | 500 A | Schottky Diodes & Rectifiers | 通孔 | Axial | NO | TOP HAT | SILICON | 2 | 微芯片技术 | 1N5825 | Tray | - | e0 | 无 | EAR99 | Schottky Rectifier | Tin/Lead (Sn/Pb) | GENERAL PURPOSE | 8541.10.00.80 | AXIAL | WIRE | 未说明 | compliant | O-XALF-W2 | 不合格 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 10 mA @ 40 V | 380 mV @ 5 A | ISOLATED | 5 A | 40 V | 5A | 1 | 40 V | - | 500 A | Single | 40 | 肖特基整流器 | 380 mV | Schottky Diodes & Rectifiers | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | JANTXV1N6660DT1 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 | 150 °C | -65 °C | UNSPECIFIED | SQUARE | FLANGE MOUNT | TO-254, 3 PIN | TO-254AA | MICROSEMI CORP | Obsolete | 无 | JANTXV1N6660DT1 | 1 | Microchip / Microsemi | N | Schottky Diodes & Rectifiers | NO | SILICON | 3 | 5.47 | Tray | EAR99 | POWER | 8541.10.00.80 | Diodes & Rectifiers | SINGLE | PIN/PEG | compliant | 3 | MIL-19500/608 | S-XSFM-P3 | Qualified | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | 接收电极 | ISOLATED | 15 A | 1 | 45 V | TO-254AA | 300 A | Schottky Diodes & Rectifiers | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | JANTXV1N5712UR-1 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Production (Last Updated: 2 months ago) | 无 | 活跃 | MICROSEMI CORP | DO-213AA | O-LELF-R2 | 1.88 | 1 | GLASS | ROUND | 长式 | 未说明 | Bulk | 活跃 | Non-Compliant | 表面贴装 | 表面贴装 | DO-213AA | YES | 2 | DO-213AA | SILICON | 2 | 微芯片技术 | JANTXV1N5712UR-1 | Military, MIL-PRF-19500/444 | e0 | 无 | EAR99 | Tin/Lead (Sn/Pb) | 150 °C | -65 °C | 冶金结合 | 8541.10.00.70 | END | 环绕 | 未说明 | compliant | 2 | MIL-19500/444 | O-LELF-R2 | Qualified | SINGLE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 150 nA @ 16 V | 1 V @ 35 mA | ISOLATED | 75 mA | -65°C ~ 150°C | 0.075 A | 16 V | 75mA | 1 V | 20 V | DO-213AA | 2pF @ 0V, 1MHz | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | JAN1N5822US | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | 活跃 | MICROSEMI CORP | HERMETIC SEALED, D-5B, 2 PIN | 5.35 | 1 | GLASS | ROUND | 长式 | 未说明 | Bulk | 活跃 | 表面贴装 | SQ-MELF, B | YES | B, SQ-MELF | SILICON | 2 | 微芯片技术 | JAN1N5822US | Military, MIL-PRF-19500/620 | e0 | 无 | Tin/Lead (Sn/Pb) | GENERAL PURPOSE | 冶金结合 | 8541.10.00.80 | END | 环绕 | 未说明 | not_compliant | 2 | MIL-19500/620E | O-LELF-R2 | Qualified | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 500 mV @ 3 A | ISOLATED | -65°C ~ 150°C | 3 A | 40 V | 3A | 1 | - | 80 A | 40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LSM535JE3/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Production (Last Updated: 2 months ago) | 活跃 | MICROSEMI CORP | 5.73 | Tape & Reel (TR) | LSM535 | 活跃 | Compliant | 3000 | 微芯片技术 | Schottky Diodes & Rectifiers | 表面贴装 | 表面贴装 | DO-214AB, SMC | DO-214AB | 微芯片技术 | LSM535JE3/TR13 | Tape & Reel (TR) | - | 有 | Diodes & Rectifiers | Schottky | unknown | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 2 mA @ 35 V | 520 mV @ 5 A | -55°C ~ 150°C | 35 V | 5A | 35 V | 5 A | - | Schottky Diodes & Rectifiers | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HSM160JE3/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | MICROSEMI CORP | DO-214BA | ROHS COMPLIANT, PLASTIC PACKAGE-2 | 1.93 | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 未说明 | Tape & Reel (TR) | HSM160 | 活跃 | 3000 | 微芯片技术 | Details | Schottky Diodes & Rectifiers | 表面贴装 | DO-214BA | YES | DO-214BA | SILICON | 2 | 微芯片技术 | HSM160JE3/TR13 | Reel | - | 有 | EAR99 | 8541.10.00.80 | Diodes & Rectifiers | DUAL | C 弯管 | 未说明 | compliant | 2 | R-PDSO-C2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 100 µA @ 60 V | 690 mV @ 1 A | -55°C ~ 175°C | 1 A | 60 V | 1A | 60 V | DO-214BA | - | Single | 60 | Schottky Diodes & Rectifiers | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | JAN1N6843CCU3 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | MICROSEMI CORP | R-CBCC-N3 | 5.51 | 0.6 V | 2 | 150 °C | -65 °C | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | 1 | Microchip / Microsemi | N | Bulk | 1N6843 | 活跃 | Schottky Diodes & Rectifiers | 表面贴装 | 3-SMD, No Lead | YES | U3 | SILICON | 3 | 微芯片技术 | JAN1N6843CCU3 | Tray | Military, MIL-PRF-19500/578 | e4 | EAR99 | Gold (Au) - with Nickel (Ni) barrier | GENERAL PURPOSE | LOW LEAKAGE CURRENT, LOW POWER LOSS | 8541.10.00.80 | BOTTOM | 无铅 | compliant | 3 | MIL-19500 | R-CBCC-N3 | Qualified | COMMON CATHODE, 2 ELEMENTS | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 500 nA @ 75 V | 1.2 V @ 100 mA | -65°C ~ 175°C | 10 A | 50 V | 300mA | 1 | 100 V | 5pF @ 0V, 1MHz | 100 A | 6 ns | Schottky Diodes & Rectifiers | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | JAN1N7043CAT1 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | 活跃 | MICROSEMI CORP | 5.5 | 1.3 V | 2 | 150 °C | -65 °C | CERAMIC, METAL-SEALED COFIRED | SQUARE | FLANGE MOUNT | Bulk | 1N7043 | 活跃 | 35A | 1 | Microchip / Microsemi | N | Schottky Diodes & Rectifiers | 通孔 | TO-254-3, TO-254AA | NO | TO-254AA | SILICON | 3 | 微芯片技术 | JAN1N7043CAT1 | Tray | MIL-PRF-19500/730 | POWER | HIGH RELIABILITY | Diodes & Rectifiers | SINGLE | PIN/PEG | compliant | MIL-19500 | S-CSFM-P3 | Qualified | COMMON ANODE, 2 ELEMENTS | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 500 µA @ 100 V | 1.3 V @ 35 A | ISOLATED | -65°C ~ 150°C | 17.5 A | 100 V | 1 | 100 V | TO-254AA | 175 A | 1 Pair Common Anode | 500 µA | Schottky Diodes & Rectifiers | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LSM845JE3/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Production (Last Updated: 2 months ago) | 活跃 | MICROSEMI CORP | DO-214AB | DO-214AB, 2 PIN | 5.58 | 1 | PLASTIC/EPOXY | RECTANGULAR | 小概要 | Tape & Reel (TR) | LSM845 | 活跃 | Compliant | 3000 | 微芯片技术 | Schottky Diodes & Rectifiers | 表面贴装 | 表面贴装 | DO-214AB, SMC | YES | 2 | DO-214AB | SILICON | 2 | 微芯片技术 | LSM845JE3/TR13 | Tape & Reel | - | EAR99 | 150 °C | -55 °C | GENERAL PURPOSE | 8541.10.00.80 | Diodes & Rectifiers | DUAL | J BEND | compliant | 2 | R-PDSO-J2 | 不合格 | SINGLE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 2 mA @ 45 V | 520 mV @ 8 A | 8 A | -55°C ~ 150°C | 8 A | 45 V | 8A | 520 mV | 45 V | 8 A | 1 | 2 mA | 45 V | 45 V | DO-214AB | - | 350 A | 350 A | Schottky Diodes & Rectifiers | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LSM140GE3/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Production (Last Updated: 2 months ago) | 有 | 活跃 | MICROSEMI CORP | 5.46 | 0.58 V | 1 | 150 °C | Tape & Reel (TR) | LSM140 | 活跃 | Compliant | 1 mA | + 150 C | - 55 C | 40 V | 1 A | 50 A | 表面贴装 | 表面贴装 | DO-215AA, SMB Gull Wing | YES | DO-215AA | 微芯片技术 | LSM140GE3/TR13 | Tape & Reel (TR) | - | EAR99 | 8541.10.00.80 | compliant | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 1 mA @ 40 V | 580 mV @ 1 A | -55°C ~ 150°C | 1 A | 40 V | 1A | 40 V | 1 A | 40 V | - | 75 A | 肖特基整流器 | 580 mV | 无 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | LSM150G/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Production (Last Updated: 2 months ago) | 无 | 活跃 | MICROSEMI CORP | 5.8 | 0.58 V | 1 | 150 °C | Tape & Reel (TR) | LSM150 | 活跃 | 3000 | 微芯片技术 | N | Schottky Diodes & Rectifiers | 表面贴装 | 表面贴装 | DO-215AA, SMB Gull Wing | YES | 2 | DO-215AA | 微芯片技术 | LSM150G/TR13 | Reel | - | EAR99 | 150 °C | -55 °C | 8541.10.00.80 | unknown | SINGLE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 1 mA @ 50 V | 580 mV @ 1 A | -55°C ~ 150°C | 1 A | 50 V | 1A | 50 V | 1 A | 1 mA | 50 V | 50 V | - | 50 A | 75 A | Schottky Diodes & Rectifiers | 无 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HSM880JE3/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | MICROSEMI CORP | R-PDSO-J2 | 5.75 | 0.78 V | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 未说明 | Tape & Reel (TR) | HSM880 | 活跃 | 3000 | 微芯片技术 | Details | Schottky Diodes & Rectifiers | 表面贴装 | DO-214AB, SMC | YES | DO-214AB | SILICON | 2 | 微芯片技术 | HSM880JE3/TR13 | Reel | - | e3 | 有 | Matte Tin (Sn) | EFFICIENCY | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, LOW POWER LOSS | Diodes & Rectifiers | DUAL | J BEND | 未说明 | compliant | R-PDSO-J2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 500 µA @ 80 V | 780 mV @ 8 A | -55°C ~ 175°C | 8 A | 80 V | 8A | 1 | 80 V | DO-214AB | - | 300 A | 500 µA | 80 V | Schottky Diodes & Rectifiers | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HSM1100G/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Production (Last Updated: 2 months ago) | 有 | 活跃 | MICROSEMI CORP | DO-215AA | R-PDSO-G2 | 5.28 | 1 | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 40 | Tape & Reel (TR) | HSM1100 | 活跃 | Compliant | 表面贴装 | 表面贴装 | DO-215AA, SMB Gull Wing | YES | 2 | DO-215AA | SILICON | 2 | 微芯片技术 | HSM1100G/TR13 | Tape & Reel | - | e3 | 有 | EAR99 | 哑光锡 | 175 °C | -55 °C | 8541.10.00.80 | DUAL | 鸥翼 | 260 | compliant | 2 | R-PDSO-G2 | 不合格 | SINGLE | Single | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 100 µA @ 100 V | 840 mV @ 1 A | 1 A | -55°C ~ 175°C | 1 A | 100 V | 1A | 100 V | 1 A | 100 µA | 100 V | 100 V | DO-215AA | - | 40 A | 无 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | HSM560J/TR13 | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | 活跃 | MICROSEMI CORP | DO-214AB | SMCJ, 2 PIN | 5.5 | 1 | 175 °C | -55 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | 未说明 | Tape & Reel (TR) | HSM560 | 活跃 | 3000 | 微芯片技术 | N | Schottky Diodes & Rectifiers | 表面贴装 | DO-214AB, SMC | YES | DO-214AB | SILICON | 2 | 微芯片技术 | HSM560J/TR13 | Reel | - | 无 | EAR99 | GENERAL PURPOSE | 8541.10.00.80 | Diodes & Rectifiers | DUAL | J BEND | 未说明 | compliant | 2 | R-PDSO-J2 | SINGLE | Fast Recovery =< 500ns, > 200mA (Io) | 接收电极 | 250 µA @ 60 V | 650 mV @ 5 A | -55°C ~ 175°C | 5 A | 60 V | 5A | 1 | 60 V | DO-214AB | - | 250 A | 60 | Schottky Diodes & Rectifiers |