制造商是'IXYS'
IXYS 晶体管 - FET，MOSFET - 单个
(2512)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 电压 | 元素配置 | 电流 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级（Eas） | 场效应管特性 | 栅源电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||
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 | IXFH80N65X2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 10V | 1 | 890W Tc | 通孔 | 通孔 | TO-247-3 | SILICON | 80A Tc | -55°C~150°C TJ | Tube | 2015 | HiPerFET™ | 活跃 | 1 (Unlimited) | 3 | EAR99 | 雪崩 额定 | SINGLE | 未说明 | not_compliant | 未说明 | R-PSFM-T3 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | N-Channel | SWITCHING | 40m Ω @ 40A, 10V | 5.5V @ 4mA | 8245pF @ 25V | 143nC @ 10V | 650V | ±30V | 80A | 0.038Ohm | 160A | 650V | 3000 mJ | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
 | IXTQ200N10T | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 10V | 1 | 550W Tc | 45 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 200A Tc | -55°C~175°C TJ | Tube | 2008 | TrenchMV™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 5.5MOhm | PURE TIN | 雪崩 额定 | 未说明 | unknown | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 550W | DRAIN | N-Channel | SWITCHING | 5.5m Ω @ 50A, 10V | 4.5V @ 250μA | 9400pF @ 25V | 152nC @ 10V | 31ns | ±30V | 34 ns | 200A | 100V | 500A | 1500 mJ | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
 | IXFN420N10T | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 30 Weeks | 10V | 1 | 1070W Tc | 底座安装 | 底座安装 | SOT-227-4, miniBLOC | 4 | SILICON | 420A Tc | -55°C~175°C TJ | Tube | 2009 | GigaMOS™ HiPerFET™ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Nickel (Ni) | AVALANCHE RATED, UL RECOGNIZED | UPPER | UNSPECIFIED | 未说明 | 未说明 | 4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | ISOLATED | N-Channel | SWITCHING | 2.3m Ω @ 60A, 10V | 5V @ 8mA | 47000pF @ 25V | 670nC @ 10V | 100V | ±20V | 420A | 0.0023Ohm | 1000A | 100V | 5000 mJ | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
 | IXTH48N65X2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 10V | 660W Tc | 通孔 | 通孔 | TO-247-3 | 48A Tc | -55°C~150°C TJ | Tube | 2015 | 活跃 | 1 (Unlimited) | EAR99 | 未说明 | not_compliant | 未说明 | N-Channel | 68m Ω @ 24A, 10V | 4.5V @ 4mA | 4420pF @ 25V | 77nC @ 10V | 650V | ±30V | 48A | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH46N65X2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 10V | 46A Tc | 通孔 | 通孔 | TO-247-3 | 660W Tc | -55°C~150°C TJ | Tube | 2013 | HiPerFET™ | 活跃 | 1 (Unlimited) | EAR99 | 未说明 | unknown | 未说明 | N-Channel | 76m Ω @ 23A, 10V | 5.5V @ 4mA | 4810pF @ 25V | 75nC @ 10V | 650V | ±30V | 46A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXFH60N65X2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 10V | 780W Tc | 通孔 | 通孔 | TO-247-3 | 60A Tc | -55°C~150°C TJ | Tube | 2015 | HiPerFET™ | 活跃 | 1 (Unlimited) | EAR99 | 未说明 | unknown | 未说明 | N-Channel | 52m Ω @ 30A, 10V | 5.5V @ 4mA | 6180pF @ 25V | 107nC @ 10V | 650V | ±30V | 60A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ100N25P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 600W Tc | 100 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 100A Tc | -55°C~150°C TJ | Tube | 2006 | PolarHT™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 27MOhm | Matte Tin (Sn) | 雪崩 额定 | 未说明 | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 600W | DRAIN | N-Channel | SWITCHING | 24m Ω @ 50A, 10V | 5V @ 250μA | 6300pF @ 25V | 185nC @ 10V | 26ns | ±20V | 28 ns | 100A | 5V | 20V | 250V | 250A | 2000 mJ | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| IXTQ110N10P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 480W Tc | 65 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 110A Tc | -55°C~175°C TJ | Tube | 2006 | PolarHT™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 雪崩 额定 | 未说明 | unknown | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 480W | DRAIN | N-Channel | SWITCHING | 15m Ω @ 500mA, 10V | 5V @ 250μA | 3550pF @ 25V | 110nC @ 10V | 25ns | ±20V | 25 ns | 110A | 20V | 0.015Ohm | 100V | 250A | 1000 mJ | ROHS3 Compliant | ||||||||||||||||||||||||||||||
 | IXTP160N10T | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 10V | 1 | 430W Tc | 49 ns | 通孔 | 通孔 | TO-220-3 | SILICON | 160A Tc | -55°C~175°C TJ | Tube | 2006 | TrenchMV™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 3 | R-PSFM-T3 | Single | 增强型MOSFET | 430W | DRAIN | N-Channel | SWITCHING | 7m Ω @ 25A, 10V | 4.5V @ 250μA | 6600pF @ 25V | 132nC @ 10V | 61ns | ±30V | 42 ns | 160A | TO-220AB | 0.007Ohm | 100V | 430A | 500 mJ | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
 | IXTK120N25P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 10V | 1 | 700W Tc | 130 ns | 通孔 | 通孔 | TO-264-3, TO-264AA | 3 | SILICON | 120A Tc | -55°C~175°C TJ | Tube | 2006 | PolarHT™ | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 24MOhm | Tin/Silver/Copper (Sn/Ag/Cu) | 雪崩 额定 | 未说明 | unknown | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 700W | DRAIN | N-Channel | SWITCHING | 24m Ω @ 60A, 10V | 5V @ 500μA | 8000pF @ 25V | 185nC @ 10V | 33ns | ±20V | 33 ns | 120A | 5V | 20V | 250V | 2.5 mJ | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| IXTQ69N30P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 500W Tc | 75 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 69A Tc | -55°C~150°C TJ | Tube | 2006 | PolarHT™ | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Pure Tin (Sn) | 雪崩 额定 | 未说明 | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 500W | DRAIN | N-Channel | SWITCHING | 49m Ω @ 500mA, 10V | 5V @ 250μA | 4960pF @ 25V | 180nC @ 10V | 25ns | ±20V | 27 ns | 69A | 20V | 0.049Ohm | 300V | 200A | 1500 mJ | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| IXTP220N04T2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 360W Tc | 31 ns | 通孔 | 通孔 | TO-220-3 | SILICON | 220A Tc | -55°C~175°C TJ | Tube | 2008 | TrenchT2™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 雪崩 额定 | 未说明 | 未说明 | 3 | R-PSFM-T3 | 不合格 | 40V | Single | 75A | 增强型MOSFET | 360W | DRAIN | N-Channel | SWITCHING | 3.5m Ω @ 50A, 10V | 4V @ 250μA | 6820pF @ 25V | 112nC @ 10V | 21ns | ±20V | 21 ns | 220A | TO-220AB | 20V | 0.0035Ohm | 40V | 600 mJ | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| IXTH15N50L2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | 10V | 1 | 300W Tc | 通孔 | 通孔 | TO-247-3 | 3 | SILICON | 15A Tc | -55°C~150°C TJ | Tube | 2009 | Linear L2™ | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 雪崩 额定 | SINGLE | 未说明 | 未说明 | 3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 300W | DRAIN | N-Channel | SWITCHING | 480m Ω @ 7.5A, 10V | 4.5V @ 250μA | 4080pF @ 25V | 123nC @ 10V | 500V | ±20V | 15A | 2.5V | 0.48Ohm | 500V | 750 mJ | 2.5 V | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||
| IXFN48N60P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 30 Weeks | 10V | 1 | 625W Tc | 85 ns | Chassis Mount, Panel, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | SILICON | 40A Tc | -55°C~150°C TJ | Tube | 2006 | PolarHV™ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | Nickel (Ni) | AVALANCHE RATED, UL RECOGNIZED | 600V | UPPER | UNSPECIFIED | 未说明 | 48A | 未说明 | 4 | 不合格 | Single | 增强型MOSFET | 625W | ISOLATED | 30 ns | N-Channel | SWITCHING | 140m Ω @ 4A, 10V | 5.5V @ 8mA | 8860pF @ 25V | 150nC @ 10V | 25ns | ±30V | 22 ns | 40A | 30V | 600V | 110A | 2000 mJ | 9.6mm | 38.23mm | 25.42mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| IXTH30N60L2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | 10V | 1 | 540W Tc | 123 ns | 通孔 | 通孔 | TO-247-3 | 3 | SILICON | 30A Tc | -55°C~150°C TJ | Tube | 2001 | Linear L2™ | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 雪崩 额定 | 未说明 | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 540W | DRAIN | N-Channel | SWITCHING | 240m Ω @ 15A, 10V | 4.5V @ 250μA | 10700pF @ 25V | 335nC @ 10V | ±20V | 30A | 2.5V | 0.24Ohm | 600V | 80A | 2000 mJ | 2.5 V | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||
| IXFN48N50 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 10V | 1 | 520W Tc | 100 ns | Chassis Mount, Screw | 底座安装 | SOT-227-4, miniBLOC | 3 | SILICON | 48A Tc | -55°C~150°C TJ | Tube | 2002 | HiPerFET™ | yes | 不用于新设计 | 不适用 | 4 | EAR99 | 100mOhm | Nickel (Ni) | 雪崩 额定 | 8541.29.00.95 | 500V | UPPER | UNSPECIFIED | 未说明 | 48A | 未说明 | 4 | R-PUFM-X4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | 520W | DRAIN | N-Channel | SWITCHING | 100m Ω @ 500mA, 10V | 4V @ 8mA | 8400pF @ 25V | 270nC @ 10V | 60ns | ±20V | 30 ns | 48A | 4V | 20V | 500V | 192A | 500V | 4 V | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
 | IXTA140P05T-TRL | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 140A (Tc) | 10V | 298W (Tc) | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263AA | IXYS | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | P-Channel | 9mOhm @ 70A, 10V | 4V @ 250μA | 13500 pF @ 25 V | 200 nC @ 10 V | 50 V | ±15V | - | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTQ52N30P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 400W Tc | 60 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 52A Tc | -55°C~150°C TJ | Tube | 2006 | PolarHT™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 雪崩 额定 | 未说明 | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 400W | DRAIN | N-Channel | SWITCHING | 66m Ω @ 26A, 10V | 5V @ 250μA | 3490pF @ 25V | 110nC @ 10V | 22ns | ±20V | 20 ns | 52A | 20V | 0.066Ohm | 300V | 150A | 1000 mJ | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| IXTQ170N10P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 715W Tc | 90 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 170A Tc | -55°C~175°C TJ | Tube | 2006 | Polar™ | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Pure Tin (Sn) | 雪崩 额定 | 未说明 | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 714W | DRAIN | N-Channel | SWITCHING | 9m Ω @ 500mA, 10V | 5V @ 250μA | 6000pF @ 25V | 198nC @ 10V | 50ns | ±20V | 33 ns | 170A | 5V | 20V | 0.009Ohm | 100V | 2000 mJ | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||
 | IXTX90N25L2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | 10V | 1 | 960W Tc | 通孔 | 通孔 | TO-247-3 | 3 | SILICON | 90A Tc | -55°C~150°C TJ | Tube | 2008 | Linear L2™ | e1 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 33mOhm | 锡银铜 | 雪崩 额定 | 未说明 | unknown | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 960W | DRAIN | N-Channel | SWITCHING | 33m Ω @ 45A, 10V | 4.5V @ 3mA | 23000pF @ 25V | 640nC @ 10V | ±20V | 90A | 2V | 20V | 250V | 2 V | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| IXTQ74N20P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 24 Weeks | 10V | 1 | 480W Tc | 60 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 74A Tc | -55°C~175°C TJ | Tube | 2006 | PolarHT™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 雪崩 额定 | 未说明 | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 400W | DRAIN | N-Channel | SWITCHING | 34m Ω @ 37A, 10V | 5V @ 250μA | 3300pF @ 25V | 107nC @ 10V | 21ns | ±20V | 21 ns | 74A | 20V | 200V | 200A | 1000 mJ | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
| IXTQ88N30P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 1 | 600W Tc | 96 ns | 通孔 | 通孔 | TO-3P-3, SC-65-3 | 3 | SILICON | 88A Tc | -55°C~150°C TJ | Tube | 2006 | PolarHT™ | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 雪崩 额定 | 未说明 | unknown | 未说明 | 3 | 不合格 | Single | 增强型MOSFET | 600W | DRAIN | N-Channel | SWITCHING | 40m Ω @ 44A, 10V | 5V @ 250μA | 6300pF @ 25V | 180nC @ 10V | 24ns | ±20V | 25 ns | 88A | 5V | 20V | 0.04Ohm | 300V | 220A | 2000 mJ | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||
| IXFN64N50P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 30 Weeks | 10V | 1 | 700W Tc | 85 ns | Chassis Mount, Panel, Screw | 底座安装 | SOT-227-4, miniBLOC | 4 | SILICON | 61A Tc | -55°C~150°C TJ | Tube | 2003 | PolarHV™ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 85MOhm | Nickel (Ni) | AVALANCHE RATED, UL RECOGNIZED | 500V | UPPER | UNSPECIFIED | 64A | 4 | Single | 增强型MOSFET | 700W | ISOLATED | 30 ns | N-Channel | SWITCHING | 85m Ω @ 32A, 10V | 5.5V @ 8mA | 8700pF @ 25V | 150nC @ 10V | 25ns | ±30V | 22 ns | 61A | 5.5V | 30V | 50A | 500V | 2500 mJ | 9.6mm | 38.23mm | 25.42mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
| IXFN140N30P | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 30 Weeks | 10V | 1 | 700W Tc | 100 ns | Chassis Mount, Panel | 底座安装 | SOT-227-4, miniBLOC | 4 | SILICON | 110A Tc | -55°C~150°C TJ | Tube | 2003 | Polar™ | yes | 活跃 | 1 (Unlimited) | 4 | EAR99 | 24mOhm | Nickel (Ni) | AVALANCHE RATED, UL RECOGNIZED | UPPER | UNSPECIFIED | 未说明 | unknown | 未说明 | 4 | 不合格 | Single | 增强型MOSFET | 700W | ISOLATED | 30 ns | N-Channel | SWITCHING | 24m Ω @ 70A, 10V | 5V @ 8mA | 14800pF @ 25V | 185nC @ 10V | 30ns | ±20V | 20 ns | 115A | 5V | 20V | 110A | 300V | 300A | 5000 mJ | 9.6mm | 38.2mm | 25.07mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
| IXFP34N65X2 | IXYS | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 10V | 540W Tc | 通孔 | 通孔 | TO-220-3 | 34A Tc | -55°C~150°C TJ | Tube | 2015 | HiPerFET™ | 活跃 | 1 (Unlimited) | N-Channel | 105m Ω @ 17A, 10V | 5.5V @ 2.5mA | 3330pF @ 25V | 56nC @ 10V | 650V | ±30V | 34A | ROHS3 Compliant |