制造商是'Infineon'
Infineon 晶体管 - 特殊用途
(242)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 晶体管元件材料 | Date Of Intro | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 应用 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 极性 | 配置 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 晶体管应用 | 无卤素 | 极性/通道类型 | 晶体管类型 | 集电极发射器电压(VCEO) | 最大集电极电流 | JEDEC-95代码 | 漏极-源极导通最大电阻 | 转换频率 | 脉冲漏极电流-最大值(IDM) | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 集电极基极电压(VCBO) | 最大耗散功率(Abs) | 发射极基极电压 (VEBO) | 集电极电流-最大值(IC) | 最小直流增益(hFE) | 反馈上限-最大值 (Crss) | 最高频段 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | BCV61CE6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 2 | 110 | Tin | 表面贴装 | 表面贴装 | TO-253-4, TO-253AA | 4 | 30V | Tape & Reel (TR) | 2005 | e3 | 最后一次购买 | 1 (Unlimited) | 4 | SMD/SMT | EAR99 | 150°C | -65°C | Current Mirror | 30V | 300mW | 鸥翼 | 100mA | 250MHz | BCV61 | AEC-Q101 | NPN | Dual | 300mW | 不含卤素 | 2 NPN, Base Collector Junction | 600mV | 100mA | 250MHz | 30V | 6V | 420 | 2.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | BCV61BE6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 表面贴装 | 表面贴装 | TO-253-4, TO-253AA | 4 | 2 | Tape & Reel (TR) | 2005 | e3 | 最后一次购买 | 1 (Unlimited) | 4 | EAR99 | Tin (Sn) | 150°C | -65°C | Current Mirror | 30V | 300mW | DUAL | 鸥翼 | 100mA | 250MHz | BCV61 | AEC-Q101 | NPN | 300mW | 不含卤素 | 2 NPN, Base Collector Junction | 5V | 100mA | 250MHz | 30V | 6V | 200 | 900μm | 2.9mm | 1.3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | PTFA080551F | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | INFINEON TECHNOLOGIES AG | ROHS COMPLIANT, 31265-2 PIN | 1 | 200 °C | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLANGE MOUNT | YES | 2 | SILICON | 有 | e4 | 有 | EAR99 | GOLD | DUAL | FLAT | compliant | 2 | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 超高频段 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPB30N03L | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 30 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 2 | SILICON | 无 | e0 | EAR99 | 锡铅 | 逻辑电平兼容 | SINGLE | 鸥翼 | not_compliant | R-PSSO-G2 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.028 Ω | 120 A | 30 V | 145 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IQE006NE2LM5 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | INFINEON TECHNOLOGIES AG | 298 A | 1 | 1 | 150 °C | -55 °C | PLASTIC/EPOXY | SQUARE | 小概要 | YES | 8 | SILICON | 2019-12-05 | 有 | e3 | EAR99 | TIN | DUAL | 无铅 | unknown | IEC-61249-2-21; IEC-68-1 | S-PDSO-N8 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SOURCE | N-CHANNEL | 0.0008 Ω | 1192 A | 25 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 89 W | 195 pF | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SXTA93 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 1 | 150 °C | 50 MHz | YES | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | not_compliant | SINGLE | NPN | 1 W | 0.5 A | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PZTA93 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 1 | 140 °C | 50 MHz | YES | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | not_compliant | SINGLE | PNP | 1.5 W | 0.5 A | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BFR90 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | INFINEON TECHNOLOGIES AG | , | 1 | YES | Obsolete | EAR99 | unknown | SINGLE | NPN | 0.18 W | 0.025 A | 25 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PTVA084007NFV1R5XUMA1 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | INFINEON TECHNOLOGIES AG | 有 | e3 | EAR99 | TIN | compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF6715MPBF | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | CHIP CARRIER, R-XBCC-N3 | 34 A | 1 | 150 °C | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | YES | 3 | SILICON | 有 | e1 | EAR99 | 锡银铜 | BOTTOM | 无铅 | compliant | R-XBCC-N3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.0016 Ω | 270 A | 25 V | 200 mJ | METAL-OXIDE SEMICONDUCTOR | 78 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFR212 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 2.1 A | 1 | 1 | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 2 | SILICON | 无 | e3 | EAR99 | 镍外哑光锡 | SINGLE | 鸥翼 | unknown | R-PSSO-G2 | 不合格 | SINGLE | 增强型MOSFET | N-CHANNEL | TO-252AA | 2.4 Ω | 8.4 A | 200 V | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PZT2907 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 1 | 150 °C | 200 MHz | YES | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | compliant | SINGLE | PNP | 1.5 W | 0.6 A | 75 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRLL024NQ | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | SOT-223, 4 PIN | 3.1 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | 小概要 | YES | 4 | SILICON | 无 | e0 | EAR99 | 锡铅 | DUAL | 鸥翼 | not_compliant | R-PDSO-G4 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | N-CHANNEL | 0.065 Ω | 12 A | 55 V | 87 mJ | METAL-OXIDE SEMICONDUCTOR | 1.3 W | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SMBT4124 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 1 | 300 MHz | YES | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | not_compliant | SINGLE | NPN | 0.33 W | 0.2 A | 120 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRFB428PBF | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPU01N60S5 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | INFINEON TECHNOLOGIES AG | TO-251AA | IN-LINE, R-PSIP-T3 | 0.8 A | 1 | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | NO | 3 | SILICON | Obsolete | e3 | EAR99 | 哑光锡 | 雪崩 额定 | SINGLE | THROUGH-HOLE | compliant | 3 | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-CHANNEL | TO-251AA | 6 Ω | 1.6 A | 600 V | 20 mJ | METAL-OXIDE SEMICONDUCTOR | 11 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF9Z25 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 8.9 A | 1 | NO | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | not_compliant | SINGLE | 增强型MOSFET | P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 40 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PTFA142401FL | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | INFINEON TECHNOLOGIES AG | GREEN, H-34288-2, 2 PIN | FLATPACK | RECTANGULAR | CERAMIC, METAL-SEALED COFIRED | 200 °C | 1 | YES | 2 | SILICON | 有 | e4 | 有 | EAR99 | GOLD | DUAL | FLAT | compliant | 2 | R-CDFP-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | L带 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPU31N05 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 31 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | SINGLE | THROUGH-HOLE | not_compliant | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | N-CHANNEL | 0.036 Ω | 124 A | 55 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IPB014N06NE8197ATMA1 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SMBT6429 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 1 | 100 MHz | YES | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | not_compliant | SINGLE | NPN | 0.33 W | 0.2 A | 500 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PTFA210301E | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | INFINEON TECHNOLOGIES AG | ROHS COMPLIANT, H-30265-2, 2 PIN | 0.00001 A | 1 | 150 °C | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLANGE MOUNT | YES | 2 | SILICON | 有 | EAR99 | HIGH RELIABILITY | DUAL | FLAT | 未说明 | compliant | 未说明 | 2 | R-CDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 145 W | S带 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRL6903 | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | TO-220AB, 3 PIN | 105 A | 1 | PLASTIC/EPOXY | RECTANGULAR | FLANGE MOUNT | NO | 3 | SILICON | 无 | e3 | EAR99 | 镍外哑光锡 | AVALANCHE RATED, HIGH RELIABILITY | SINGLE | THROUGH-HOLE | unknown | R-PSFM-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | SWITCHING | P-CHANNEL | TO-220AB | 0.011 Ω | 360 A | 30 V | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SPU28N05L | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INFINEON TECHNOLOGIES AG | 28 A | 1 | 175 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | NO | 3 | SILICON | 无 | e0 | EAR99 | 锡铅 | 逻辑电平兼容 | SINGLE | THROUGH-HOLE | not_compliant | R-PSIP-T3 | 不合格 | SINGLE WITH BUILT-IN DIODE | 增强型MOSFET | SWITCHING | N-CHANNEL | 0.044 Ω | 112 A | 55 V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 75 W | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PTFA241301F | Infineon Technologies AG | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | INFINEON TECHNOLOGIES AG | FLATPACK, R-CDFP-F2 | 1 | 200 °C | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLATPACK | YES | 2 | SILICON | 有 | 有 | EAR99 | DUAL | FLAT | 未说明 | compliant | 未说明 | 2 | R-CDFP-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | AMPLIFIER | N-CHANNEL | 65 V | METAL-OXIDE SEMICONDUCTOR | 438 W | S带 |