制造商是'Infineon'
Infineon 晶体管 - FET，MOSFET - 阵列
(1319)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | HTS代码 | 额定功率 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | 配置 | 行间距 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 雪崩能量等级（Eas） | 场效应管技术 | 恢复时间 | 最大结点温度（Tj） | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | IRF7303TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 22 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | Matte Tin (Sn) | 超低电阻 | 30V | 2W | 鸥翼 | 260 | 4.9A | 30 | IRF7303PBF | Dual | 增强型MOSFET | 2W | 6.8 ns | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 25V | 25nC @ 10V | 21ns | 7.7 ns | 4.9A | 1V | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 71 ns | Standard | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| IRF7341TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 32 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | 55V | 2W | 鸥翼 | 260 | 4.7A | 30 | IRF7341PBF | 6.3 mm | 2 | Dual | 增强型MOSFET | 2W | 8.3 ns | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 3.2ns | 13 ns | 4.7A | 1V | 20V | 5.1A | 55V | 55V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 90 ns | 150°C | 逻辑电平门 | 1 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||
| IRF7309TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 25 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4A 3A | -55°C~150°C TJ | Tape & Reel (TR) | 2001 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | 超低电阻 | 1.4W | DUAL | 鸥翼 | 4A | IRF7309PBF | 6.3 mm | 增强型MOSFET | 1.4W | N and P-Channel | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 15V | 25nC @ 4.5V | N-CHANNEL AND P-CHANNEL | 4A | 1V | 20V | 4A | 30V | 16A | METAL-OXIDE SEMICONDUCTOR | Standard | 1 V | 1.4986mm | 4.9784mm | 4.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| IRF7307TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 51 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5.2A 4.3A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | Matte Tin (Sn) | 超低电阻 | 2W | DUAL | 鸥翼 | 5.2A | IRF7307PBF | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 660pF @ 15V | 20nC @ 4.5V | 26ns | N-CHANNEL AND P-CHANNEL | 33 ns | 5.2A | 700mV | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| IRF7304TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 51 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.3A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | 90mOhm | 逻辑电平兼容 | 2W | -20V | 2W | 鸥翼 | -4.3A | IRF7304PBF | Dual | 增强型MOSFET | 2W | 8.4 ns | 2 P-Channel (Dual) | 90m Ω @ 2.2A, 4.5V | 700mV @ 250μA | 610pF @ 15V | 22nC @ 4.5V | 26ns | 20V | 33 ns | -4.3A | -700mV | 12V | 3.6A | -20V | METAL-OXIDE SEMICONDUCTOR | 84 ns | 逻辑电平门 | -700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||
| IRF7328TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 198 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 8A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 21MOhm | 超低电阻 | -30V | 2W | 鸥翼 | -8A | IRF7328PBF | 6.3 mm | 2 | Dual | 增强型MOSFET | 2W | 13 ns | 2 P-Channel (Dual) | SWITCHING | 21m Ω @ 8A, 10V | 2.5V @ 250μA | 2675pF @ 25V | 78nC @ 10V | 15ns | 30V | 98 ns | -8A | -1V | 20V | 8A | -30V | -30V | METAL-OXIDE SEMICONDUCTOR | 56 ns | 150°C | 逻辑电平门 | -2.5 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
| IRF7306TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 25 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.6A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100mOhm | 超低电阻 | -30V | 2W | 鸥翼 | -3.6A | IRF7306PBF | 6.3 mm | 2 | Dual | 增强型MOSFET | 2W | 11 ns | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 440pF @ 25V | 25nC @ 10V | 17ns | 30V | 18 ns | -3.6A | -1V | 20V | -30V | 14A | METAL-OXIDE SEMICONDUCTOR | 80 ns | 150°C | 逻辑电平门 | -1 V | 1.75mm | 4.9784mm | 4.05mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
 | BSD235CH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2 | 表面贴装 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 950mA 530mA | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 雪崩 额定 | 8541.21.00.95 | 500mW | DUAL | 鸥翼 | 未说明 | 未说明 | BSD235 | AEC-Q101 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | 350m Ω @ 950mA, 4.5V | 1.2V @ 1.6μA | 无卤素 | 47pF @ 10V | 0.34nC @ 4.5V | 20V | N-CHANNEL AND P-CHANNEL | 530mA | 12V | -20V | 0.95A | 0.35Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
 | IPG20N06S4L11ATMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 58 ns | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2003 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 65W | FLAT | 未说明 | not_compliant | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 11 ns | 65W | 2 N-Channel (Dual) | 11.2m Ω @ 17A, 10V | 2.2V @ 28μA | 无卤素 | 4020pF @ 25V | 53nC @ 10V | 3ns | 19 ns | 20A | 16V | 60V | 0.0112Ohm | 165 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||
| IRF7324TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 170 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 9A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 18mOhm | Matte Tin (Sn) | HIGH RELIABILITY | -20V | 2W | 鸥翼 | 260 | -9A | 30 | IRF7324PBF | Dual | 增强型MOSFET | 2W | 17 ns | 2 P-Channel (Dual) | SWITCHING | 18m Ω @ 9A, 4.5V | 1V @ 250μA | 2940pF @ 15V | 63nC @ 5V | 36ns | 20V | 190 ns | -9A | -1V | 12V | 9A | -20V | 71A | METAL-OXIDE SEMICONDUCTOR | 270 ns | 150°C | 逻辑电平门 | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||
| IRF7380TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 41 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 73MOhm | 80V | 2W | 鸥翼 | 260 | 3.6A | 30 | IRF7380PBF | Dual | 增强型MOSFET | 2W | 9 ns | 2 N-Channel (Dual) | SWITCHING | 73m Ω @ 2.2A, 10V | 4V @ 250μA | 660pF @ 25V | 23nC @ 10V | 10ns | 17 ns | 3.6A | 4V | 20V | 80V | 75 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 4 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| IRF9952TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 20 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.5A 2.3A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 100mOhm | HIGH RELIABILITY | 2W | DUAL | 鸥翼 | 3.5A | IRF9952PBF | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 190pF @ 15V | 14nC @ 10V | 14ns | N-CHANNEL AND P-CHANNEL | 3.5A | 1V | 20V | 30V | 16A | 44 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||||
| IRF7101TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 24 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 100mOhm | Matte Tin (Sn) | 2W | 20V | 2W | 鸥翼 | 3.5A | IRF7101PBF | 6.3 mm | Dual | 增强型MOSFET | 2W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 1.8A, 10V | 3V @ 250μA | 320pF @ 15V | 15nC @ 10V | 10ns | 30 ns | 3.5A | 3V | 12V | 20V | 14A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 3 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| IRF7907TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 9.1A 11A | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2W | 鸥翼 | 260 | 30 | IRF7907PBF | Dual | 增强型MOSFET | 2W | 2 N-Channel (Dual) | 16.4m Ω @ 9.1A, 10V | 2.35V @ 25μA | 850pF @ 15V | 10nC @ 4.5V | 11A | 20V | 30V | 15 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
| IRF7319TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 34 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2W | DUAL | 鸥翼 | 6.5A | IRF7319PBF | 6.3 mm | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 13ns | N-CHANNEL AND P-CHANNEL | 32 ns | 6.5A | 1V | 20V | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | Standard | 1 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||
| IRF7351TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 17 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2W | 鸥翼 | IRF7351PBF | Dual | 增强型MOSFET | 2W | 5.1 ns | 2 N-Channel (Dual) | SWITCHING | 17.8m Ω @ 8A, 10V | 4V @ 50μA | 1330pF @ 30V | 36nC @ 10V | 5.9ns | 60V | 6.7 ns | 8A | 20V | 8A | 60V | 64A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| IRF7343TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 43 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.7A 3.4A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2W | DUAL | 鸥翼 | 4.7A | IRF7343PBF | 6.3 mm | 2 | 增强型MOSFET | 2W | 8.3 ns | N and P-Channel | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 10ns | N-CHANNEL AND P-CHANNEL | 22 ns | 4.7A | 1V | 20V | 55V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 1 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
 | IRLHS6376TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 11 ns | 表面贴装 | 表面贴装 | 6-VDFN Exposed Pad | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 1.5W | IRLHS6376 | Dual | 增强型MOSFET | 1.5W | DRAIN | 4.4 ns | 2 N-Channel (Dual) | SWITCHING | 63m Ω @ 3.4A, 4.5V | 1.1V @ 10μA | 270pF @ 25V | 2.8nC @ 4.5V | 11ns | 30V | 9.4 ns | 3.6A | 800mV | 12V | 3.4A | 0.082Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 800 mV | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| IRF9956TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 13 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | AVALANCHE RATED, HIGH RELIABILITY | 20V | 2W | 鸥翼 | 3.5A | IRF9956PBF | Dual | 增强型MOSFET | 2W | 6.2 ns | 2 N-Channel (Dual) | SWITCHING | 100m Ω @ 2.2A, 10V | 1V @ 250μA | 190pF @ 15V | 14nC @ 10V | 8.8ns | 3 ns | 3.5A | 20V | 0.1Ohm | 30V | 16A | 44 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 20 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||||
| IRF7316TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 34 ns | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 4.9A | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 58mOhm | 雪崩 额定 | -30V | 2W | 鸥翼 | -4.9A | IRF7316PBF | 2 | Dual | 增强型MOSFET | 2W | 13 ns | 2 P-Channel (Dual) | SWITCHING | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 710pF @ 25V | 34nC @ 10V | 13ns | 30V | 32 ns | -4.9A | -1V | 20V | -30V | 30A | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 66 ns | 150°C | 逻辑电平门 | -1 V | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||
 | BSL308PEH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 15.3 ns | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | yes | 活跃 | 1 (Unlimited) | 6 | 500mW | 鸥翼 | 未说明 | 未说明 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 5.6 ns | 2 P-Channel (Dual) | 80m Ω @ 2A, 10V | 1V @ 11μA | 无卤素 | 500pF @ 15V | 5nC @ 10V | 7.7ns | 30V | 2.8 ns | 2A | 20V | -30V | 2A | 0.08Ohm | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | 18 pF | 1mm | 2.9mm | 1.6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
| BSD840NH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 7.8 ns | 表面贴装 | 表面贴装 | 6-VSSOP, SC-88, SOT-363 | 6 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | OptiMOS™ | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | 500mW | 鸥翼 | 未说明 | 未说明 | BSD840 | 6 | 2 | 增强型MOSFET | 500mW | 1.9 ns | 2 N-Channel (Dual) | 400m Ω @ 880mA, 2.5V | 750mV @ 1.6μA | 无卤素 | 78pF @ 10V | 0.26nC @ 2.5V | 2.2ns | 880mA | 550mV | 8V | 20V | 3.5A | 0.4Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1mm | 2mm | 1.25mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| IRF7904TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 7.6A 11A | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 16.2MOhm | 2W | 鸥翼 | IRF7904PBF | Dual | 增强型MOSFET | 2W | 1.4W 2W | 2 N-Channel (Dual) | 16.2m Ω @ 7.6A, 10V | 2.25V @ 25μA | 910pF @ 15V | 11nC @ 4.5V | 11A | 20V | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
| IRF7317TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 2 | 42 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 6.6A 5.3A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 29mOhm | Matte Tin (Sn) | AVALANCHE RATED, ULTRA LOW RESISTANCE | 2W | DUAL | 鸥翼 | 6.6A | IRF7317PBF | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 29m Ω @ 6A, 4.5V | 700mV @ 250μA | 900pF @ 15V | 27nC @ 4.5V | 40ns | N-CHANNEL AND P-CHANNEL | 49 ns | 6.6A | 700mV | 12V | 20V | 100 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| IRF8313TRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8.5 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | -55°C~175°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 15.5MOhm | Matte Tin (Sn) | 2W | 鸥翼 | IRF8313PBF | Dual | 增强型MOSFET | 2W | 8.3 ns | 2 N-Channel (Dual) | SWITCHING | 15.5m Ω @ 9.7A, 10V | 2.35V @ 25μA | 760pF @ 15V | 9nC @ 4.5V | 9.9ns | 30V | 4.2 ns | 9.7A | 1.8V | 20V | 30V | 46 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.8 V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |