制造商是'ELITE SEMICONDUCTOR'
ELITE SEMICONDUCTOR 存储器 - 模块
(9)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | Date Of Intro | Noal voltage | Relative humidity | Switching cycles (electrical) | 包装 | ECCN 代码 | 类型 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 温度等级 | 电源电压-最小值(Vsup) | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 并行/串行 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 电源 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 引导模块 | 触点 | 直径 | 长度 | 宽度 | ||||||||||||||||||
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EN25QH64A-104HIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | SOP, SOP8,.3 | 104 MHz | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.3 | SQUARE | 小概要 | 3 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | S-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.035 mA | 8MX8 | 3-STATE | 2.2 mm | 8 | 0.00002 A | 67108864 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 5.275 mm | 5.275 mm | ||||||||||||||||||||
EN25QH16B-104HIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOP-8 | 104 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SQUARE | 小概要 | 3 V | 8 | 有 | EAR99 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | S-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 2MX8 | 2.2 mm | 8 | 16777216 bit | SERIAL | FLASH | 3 V | 5.275 mm | 5.275 mm | ||||||||||||||||||||||||||||||
EN25F10-100GIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOP, SOP8,.25 | 100 MHz | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | 小概要 | 3 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | R-PDSO-G8 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.025 mA | 128KX8 | 1.75 mm | 8 | 0.000005 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||
F50L1G41LB-104YG2M | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | , | 104 MHz | 134217728 words | 128000000 | 70 °C | UNSPECIFIED | HVSON | SOLCC8,.3 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3.3 V | 8 | 2017-08-18 | 220V, 50Hzmin | 接触制造商 | Blister | EAR99 | SLC NAND类型 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-XDSO-N8 | 3.6 V | 2.7 V | SYNCHRONOUS | 0.02 mA | 128MX8 | 3-STATE | 0.8 mm | 8 | 0.00005 A | 1073741824 bit | SERIAL | FLASH | 3.3 V | SPI | 100000 Write/Erase Cycles | 100W | 10 | HARDWARE/SOFTWARE | 1 | 8 mm | 6 mm | |||||||||||||||||||
EN25QH16A-104GIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOP, | 104 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 3 V | IP65 | 250 V | 8 | 45...85 % | Obsolete | ≥50000 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 2MX8 | 1.75 mm | 8 | 16777216 bit | SERIAL | FLASH | 2.7 V | BOTTOM/TOP | 3Pin | 22 mm | 4.9 mm | 3.9 mm | |||||||||||||||||||||||
EN25QH64-104HIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 生命周期结束 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | SOP, | 104 MHz | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SQUARE | 小概要 | 3 V | 8 | 有 | EAR99 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | S-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 8MX8 | 2.2 mm | 8 | 67108864 bit | SERIAL | FLASH | 2.7 V | 5.275 mm | 5.275 mm | ||||||||||||||||||||||||||||||
F59L1G81LA-25TIG2Y | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP1, | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 48 | 活跃 | EAR99 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | R-PDSO-G48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 128MX8 | 1.2 mm | 8 | 1073741824 bit | PARALLEL | FLASH | 3.3 V | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||
EN25T16A-75QIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | DIP, | 75 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | DIP | RECTANGULAR | IN-LINE | 3 V | 8 | 接触制造商 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-PDIP-T8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 2MX8 | 5.334 mm | 8 | 16777216 bit | SERIAL | FLASH | 2.7 V | 9.271 mm | 7.62 mm | ||||||||||||||||||||||||||||||||
EN29LV040A-70SCP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | TSOP1-32 | 70 ns | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3 V | 32 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | R-PDSO-G32 | 不合格 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.012 mA | 512KX8 | 1.2 mm | 8 | 0.000005 A | 4194304 bit | PARALLEL | FLASH | 3 V | 100000 Write/Erase Cycles | YES | YES | YES | 8 | 64K | 12.4 mm | 8 mm |