类别是'存储器连接器 - 配件'
存储器连接器 - 配件 (752)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 表面安装 | 终端数量 | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 操作模式 | 电源电流-最大值 | 访问时间 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | I/O类型 | 内存IC类型 | 刷新周期 | 顺序突发长度 | 交错突发长度 | 访问模式 | 自我刷新 | 长度 | 宽度 | |||||||||||||||||||||||
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![]() | IS42RM32400F-75BLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 5.69 | 6 ns | 133 MHz | 3 | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 2.5 V | 40 | YES | 90 | IS42RM32400F-75BLI | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | 不合格 | 2.7 V | 2.5 V | INDUSTRIAL | 2.3 V | 1 | SYNCHRONOUS | 0.125 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.00001 A | 134217728 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | 四库页面突发 | YES | 13 mm | 8 mm | |||||||||||||
![]() | IS41LV16105B-50TI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 50 ns | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP2 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 0.400 INCH, PLASTIC, TSOP2-44/50 | TSOP2 | INTEGRATED SILICON SOLUTION INC | Obsolete | 无 | IS41LV16105B-50TI | 3.3 V | 未说明 | YES | 44 | 5.73 | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 未说明 | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | 1 | ASYNCHRONOUS | 0.16 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.002 A | 16777216 bit | COMMON | 快速页面 DRAM | 1024 | 快速页面 | NO | 20.95 mm | 10.16 mm | |||||||||||||||||
![]() | IS43LR32400E-6BL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | DSBGA | TFBGA, BGA90,9X15,32 | 5.56 | 5.5 ns | 166 MHz | 3 | 4194304 words | 4000000 | 70 °C | PLASTIC/EPOXY | TFBGA | BGA90,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 40 | YES | 90 | IS43LR32400E-6BL | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.02 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 90 | R-PBGA-B90 | 不合格 | 1.95 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.09 mA | 4MX32 | 3-STATE | 1.2 mm | 32 | 0.00003 A | 134217728 bit | COMMON | DDR DRAM | 4096 | 2,4,8,16 | 2,4,8,16 | 四库页面突发 | YES | 13 mm | 8 mm | ||||||||||||||
![]() | IS43DR16128-3DBL | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | LFBGA, BGA84,9X15,32 | 5.63 | 0.45 ns | 333 MHz | 134217728 words | 128000000 | 70 °C | IS43DR16128-3DBL | PLASTIC/EPOXY | LFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 40 | YES | 84 | 有 | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.36 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.485 mA | 128MX16 | 3-STATE | 1.4 mm | 16 | 0.03 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.5 mm | 10.5 mm | |||||||||||||||
![]() | IS49RL18320-125EBL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 有 | 不推荐 | INTEGRATED SILICON SOLUTION INC | TBGA, | 5.63 | 10 ns | 33554432 words | 32000000 | 95 °C | PLASTIC/EPOXY | TBGA | SQUARE | GRID ARRAY, THIN PROFILE | 1.35 V | 未说明 | YES | 168 | IS49RL18320-125EBL-TR | 自动刷新 | BOTTOM | BALL | 未说明 | 1 | 1 mm | compliant | S-PBGA-B168 | 1.42 V | OTHER | 1.28 V | 1 | SYNCHRONOUS | 32MX18 | 1.2 mm | 18 | 603979776 bit | DDR DRAM | 多库页面突发 | 13.5 mm | 13.5 mm | |||||||||||||||||||||||||||||||||
![]() | IS41LV16105B-50T | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Obsolete | INTEGRATED SILICON SOLUTION INC | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-44/50 | 5.77 | 50 ns | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 未说明 | YES | 44 | IS41LV16105B-50T | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 未说明 | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | 不合格 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.16 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | COMMON | 快速页面 DRAM | 1024 | 快速页面 | NO | 20.95 mm | 10.16 mm | ||||||||||||||||||
![]() | IS41LV16105B-60T | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 无 | Obsolete | INTEGRATED SILICON SOLUTION INC | TSOP2 | 0.400 INCH, PLASTIC, TSOP2-44/50 | 5.77 | 60 ns | 3 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP44/50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 未说明 | YES | 44 | IS41LV16105B-60T | e0 | EAR99 | Tin/Lead (Sn/Pb) | RAS ONLY/CAS BEFORE RAS/HIDDEN/AUTO REFRESH | 8542.32.00.02 | DUAL | 鸥翼 | 未说明 | 1 | 0.8 mm | unknown | 44 | R-PDSO-G44 | 不合格 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | 1 | ASYNCHRONOUS | 0.16 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.001 A | 16777216 bit | COMMON | 快速页面 DRAM | 1024 | 快速页面 | NO | 20.95 mm | 10.16 mm | ||||||||||||||||||
![]() | IS46LR16160G-6BLA2-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | 不推荐 | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.69 | 5.5 ns | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | Compliant | YES | 60 | IS46LR16160G-6BLA2-TR | AUTO/SELF REFRESH | BOTTOM | BALL | 未说明 | 1 | 0.8 mm | compliant | R-PBGA-B60 | 1.95 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 16MX16 | 1.1 mm | 16 | 268435456 bit | DDR DRAM | 四库页面突发 | YES | 10 mm | 8 mm | ||||||||||||||||||||||||||||||
![]() | IS43TR85120A-107MBLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks, 6 Days | 有 | 生命周期结束 | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.63 | 0.085 ns | 536870912 words | 512000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.5 V | YES | 78 | IS43TR85120A-107MBLI | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B78 | 1.575 V | INDUSTRIAL | 1.425 V | 1 | SYNCHRONOUS | 512MX8 | 1.2 mm | 8 | 4294967296 bit | DDR DRAM | 多库页面突发 | YES | 10.5 mm | 9 mm | |||||||||||||||||||||||||||||||||
![]() | IS46DR16640A-25DBLA2-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | , | 5.84 | IS46DR16640A-25DBLA2-TR | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS43DR16320B-25DBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | 5.84 | 0.4 ns | 400 MHz | 1 | 33554432 words | 32000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | YES | 84 | IS43DR16320B-25DBLI-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.35 mA | 32MX16 | 3-STATE | 1.2 mm | 16 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 13 mm | 10.5 mm | |||||||||||||||||
![]() | IS43TR16640AL-15GBLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, | 5.61 | 67108864 words | 64000000 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.35 V | YES | 96 | IS43TR16640AL-15GBLI | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B96 | 1.45 V | 1.283 V | 1 | SYNCHRONOUS | 64MX16 | 1.2 mm | 16 | 1073741824 bit | DDR DRAM | 多库页面突发 | YES | 13 mm | 9 mm | |||||||||||||||||||||||||||||||||||||||
![]() | IS43DR86400B-3DBLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,9X11,32 | 5.84 | 0.45 ns | 333 MHz | 1 | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | YES | 60 | IS43DR86400B-3DBLI-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | R-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.22 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 10.5 mm | 10 mm | |||||||||||||||||
![]() | IS42VM16400G-75BLI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | FBGA, BGA54,9X9,32 | 5.75 | 6 ns | 133 MHz | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA54,9X9,32 | SQUARE | GRID ARRAY, FINE PITCH | 1.8 V | YES | 54 | IS42VM16400G-75BLI-TR | BOTTOM | BALL | 0.8 mm | compliant | S-PBGA-B54 | 不合格 | 1.8 V | INDUSTRIAL | 0.075 mA | 4MX16 | 3-STATE | 16 | 0.00003 A | 67108864 bit | COMMON | 同步剧 | 4096 | 1,2,4,8,FP | 1,2,4,8 | ||||||||||||||||||||||||||||||||||
![]() | IS43DR81280A-25EBL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,9X11,32 | 5.49 | 0.4 ns | 400 MHz | 134217728 words | 128000000 | 70 °C | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | YES | 60 | IS43DR81280A-25EBL-TR | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.31 mA | 128MX8 | 3-STATE | 1.2 mm | 8 | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.65 mm | 8 mm | |||||||||||||||||||||||||
![]() | IS46DR16160A-5BBLA2-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | 5.84 | 0.6 ns | 200 MHz | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | Automotive grade | YES | 84 | IS46DR16160A-5BBLA2-TR | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 12.5 mm | 8 mm | ||||||||||||||||||||
![]() | IS43DR86400B-3DBL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA60,9X11,32 | 5.84 | 0.45 ns | 333 MHz | 1 | 67108864 words | 64000000 | 70 °C | PLASTIC/EPOXY | TFBGA | BGA60,9X11,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 未说明 | YES | 60 | IS43DR86400B-3DBL-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | BOTTOM | BALL | 225 | 1 | 0.8 mm | compliant | R-PBGA-B60 | 不合格 | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.22 mA | 64MX8 | 3-STATE | 1.2 mm | 8 | 0.008 A | 536870912 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 10.5 mm | 10 mm | ||||||||||||||||||
![]() | IS43DR32801A-37CBLI | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | LFBGA, BGA126,12X16,32 | 5.25 | 0.5 ns | 267 MHz | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 1.8 V | 10 | YES | 126 | IS43DR32801A-37CBLI | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | CAS BEFORE RAS/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 126 | R-PBGA-B126 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.45 mA | 8MX32 | 3-STATE | 1.4 mm | 32 | 0.008 A | 268435456 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 14 mm | 11 mm | |||||||||||||
![]() | IS46DR16160A-37CBA1-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 无 | Obsolete | INTEGRATED SILICON SOLUTION INC | 8 X 12.50 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TWBGA-84 | 5.92 | 0.5 ns | 266 MHz | 16777216 words | 16000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | Non-Compliant | Automotive grade | YES | 84 | IS46DR16160A-37CBA1-TR | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.27 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 12.5 mm | 8 mm | |||||||||||||||||||
![]() | IS46DR16640A-3DBLA2-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA84,9X15,32 | 5.69 | 0.4 ns | 333 MHz | 67108864 words | 64000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | Compliant | Automotive grade | YES | 84 | IS46DR16640A-3DBLA2-TR | 105 °C | -40 °C | AUTO/SELF REFRESH | BOTTOM | BALL | 1 | 0.8 mm | compliant | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1.9 V | 1.7 V | 128 MB | 1 | SYNCHRONOUS | 0.35 mA | 450 ps | 16 b | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.015 A | 1073741824 bit | 333 MHz | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | YES | 13.65 mm | 8 mm | ||||||||||||
![]() | IS43DR32800A-37CBL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8000000 | 70 °C | PLASTIC/EPOXY | FBGA | BGA126,12X16,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 1.8 V | 267 MHz | 0.5 ns | 5.84 | INTEGRATED SILICON SOLUTION INC | Obsolete | 有 | IS43DR32800A-37CBL-TR | YES | 126 | 8388608 words | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B126 | 不合格 | 1.8 V | COMMERCIAL | 0.45 mA | 8MX32 | 3-STATE | 32 | 0.008 A | 268435456 bit | COMMON | DDR DRAM | 4096 | 4,8 | 4,8 | ||||||||||||||||||||||||||||||||||||
![]() | IS46LD32160A-25BLA2 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TFBGA, | 10 | 1.2 V | GRID ARRAY, THIN PROFILE, FINE PITCH | RECTANGULAR | TFBGA | PLASTIC/EPOXY | -40 °C | 105 °C | 16000000 | 16777216 words | 5.66 | YES | 134 | IS46LD32160A-25BLA2 | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY | BOTTOM | BALL | 260 | 1 | 0.65 mm | compliant | R-PBGA-B134 | 1.3 V | INDUSTRIAL | 1.14 V | 1 | SYNCHRONOUS | 16MX32 | 1.1 mm | 32 | 536870912 bit | DDR DRAM | 四库页面突发 | YES | 11.5 mm | 10 mm | ||||||||||||||||||||||||||||||
![]() | IS41LV16100C-50KI-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks, 6 Days | 无 | Obsolete | INTEGRATED SILICON SOLUTION INC | SOJ, SOJ42,.44 | 5.92 | 50 ns | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOJ | SOJ42,.44 | RECTANGULAR | 小概要 | 3.3 V | YES | 42 | IS41LV16100C-50KI-TR | DUAL | J BEND | 1.27 mm | compliant | R-PDSO-J42 | 不合格 | 3.3 V | INDUSTRIAL | 0.09 mA | 1MX16 | 3-STATE | 16 | 0.001 A | 16777216 bit | COMMON | EDO DRAM | 1024 | YES | |||||||||||||||||||||||||||||||||||
![]() | IS46DR16160A-5BBLA2 | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 有 | Obsolete | INTEGRATED SILICON SOLUTION INC | BGA | TFBGA, BGA84,9X15,32 | 5.71 | 0.6 ns | 200 MHz | 16777216 words | 16000000 | 105 °C | -40 °C | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 40 | Automotive grade | YES | 84 | IS46DR16160A-5BBLA2 | e1 | 有 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | AUTO/SELF REFRESH | 8542.32.00.24 | BOTTOM | BALL | 260 | 1 | 0.8 mm | compliant | 84 | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.21 mA | 16MX16 | 3-STATE | 1.2 mm | 16 | 0.005 A | 268435456 bit | AEC-Q100 | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 四库页面突发 | YES | 12.5 mm | 8 mm | |||||||||||
![]() | IS42VS16100E-75TL-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 有 | 活跃 | INTEGRATED SILICON SOLUTION INC | TSOP2, TSOP50,.46,32 | 5.47 | 6 ns | 133 MHz | 1 | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP2 | TSOP50,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 1.8 V | 未说明 | YES | 50 | IS42VS16100E-75TL-TR | e3 | 有 | Matte Tin (Sn) | AUTO/SELF REFRESH | DUAL | 鸥翼 | 225 | 1 | 0.8 mm | compliant | R-PDSO-G50 | 不合格 | 1.9 V | 1.8 V | COMMERCIAL | 1.7 V | 1 | SYNCHRONOUS | 0.06 mA | 1MX16 | 3-STATE | 1.2 mm | 16 | 0.00001 A | 16777216 bit | COMMON | 高速缓冲存储器模块 | 2048 | 1,2,4,8,FP | 1,2,4,8 | 双库页面突发 | YES | 20.95 mm | 10.16 mm |