类别是'存储器 - 模块'
存储器 - 模块 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 引脚数 | 终端数量 | 厂商 | 系列 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 额定功率 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | 电阻器类型 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 温度等级 | 电源电压-最小值(Vsup) | 内存大小 | 速度 | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | I/O类型 | 内存IC类型 | 编程电压 | 电阻公差 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 产品 | 长度 | 宽度 | ||||||||||||||||||||||
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![]() | STKC-0518-12 | PennEngineering (PEM) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25LM51245GMI00/TUBE | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AM29LV001BB-90JI | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | LCC | PLASTIC, MO-052AAE, LCC-32 | 90 ns | 3 | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 3 V | 32 | 无 | e0 | 无 | EAR99 | NOR型号 | 锡铅 | 底部启动区块 | 8542.32.00.51 | QUAD | J BEND | 260 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3.556 mm | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 1,2,7 | 8K,4K,16K | BOTTOM | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||
![]() | AM29LV001BB-90JI | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | LCC | QCCJ, LDCC32,.5X.6 | 90 ns | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 3 V | 32 | 无 | e0 | EAR99 | NOR型号 | Tin/Lead (Sn/Pb) | MINIMUM 1000K WRITE CYCLES; 20 YEAR DATA RETENTION | 8542.32.00.51 | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.03 mA | 128KX8 | 3.556 mm | 8 | 0.000005 A | 1048576 bit | PARALLEL | FLASH | 3 V | 20 | YES | YES | YES | 1,2,7 | 8K,4K,16K | BOTTOM | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||
![]() | PM25LD512C2-ZCE | Chingis Technology Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHINGIS TECHNOLOGY CORP | , | Obsolete | EAR99 | 8542.32.00.51 | unknown | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | R29791DM/883B | QP Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | R29791DM/883B | Raytheon Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Obsolete | RAYTHEON SEMICONDUCTOR | 95 ns | 8192 words | 8000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | 5 V | 24 | 无 | e0 | 锡铅 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | unknown | R-CDIP-T24 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.19 mA | 8KX8 | 8 | 65536 bit | 38535Q/M;38534H;883B | PARALLEL | OTP ROM | |||||||||||||||||||||||||||||||||||||||||||||||
![]() | PM39LV020-70VC | Programmable Microelectronics Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | PROGRAMMABLE MICROELECTRONICS CORP | TSSOP, TSSOP32,.56,20 | 70 ns | 262144 words | 256000 | 85 °C | PLASTIC/EPOXY | TSSOP | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 32 | 无 | e0 | EAR99 | NOR型号 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | 鸥翼 | 0.5 mm | unknown | R-PDSO-G32 | 不合格 | OTHER | 0.02 mA | 256KX8 | 8 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | YES | YES | YES | 64 | 4K | ||||||||||||||||||||||||||||||||||||||||||||
![]() | PM39LV020-70VC | Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | INTEGRATED SILICON SOLUTION INC | TSSOP, TSSOP32,.56,20 | 70 ns | 262144 words | 256000 | 85 °C | PLASTIC/EPOXY | TSSOP | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 3 V | 32 | 无 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | compliant | R-PDSO-G32 | 不合格 | 3.6 V | OTHER | 2.7 V | ASYNCHRONOUS | 0.02 mA | 256KX8 | 1.2 mm | 8 | 0.000005 A | 2097152 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 64 | 4K | 12.4 mm | 8 mm | |||||||||||||||||||||||||||||||||||||
![]() | PH28F640W18BE60 | Micron Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | MICRON TECHNOLOGY INC | BGA | VFBGA, | 60 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 56 | 有 | e1 | 有 | EAR99 | NOR型号 | 锡银铜 | 可进行同步突发模式操作 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.75 mm | compliant | 56 | R-PBGA-B56 | 不合格 | 1.95 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 4MX16 | 1 mm | 16 | 67108864 bit | PARALLEL | FLASH | 1.8 V | BOTTOM | 9 mm | 7.7 mm | |||||||||||||||||||||||||||||||||||||
![]() | PH28F640W18BE60 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | NUMONYX | BGA | 9 X 7.70 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-56 | 60 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 56 | Transferred | EAR99 | NOR型号 | 可进行同步突发模式操作 | 8542.32.00.51 | BOTTOM | BALL | 未说明 | 1 | 0.75 mm | unknown | 未说明 | 56 | R-PBGA-B56 | 不合格 | 1.95 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 4MX16 | 1 mm | 16 | 67108864 bit | PARALLEL | FLASH | 1.8 V | BOTTOM | 9 mm | 7.7 mm | |||||||||||||||||||||||||||||||||||||||
![]() | AM29LV065DU101REI | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | TSOP1 | MO-142DD, TSOP-48 | 100 ns | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 48 | 无 | e0 | EAR99 | NOR型号 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 8MX8 | 1.2 mm | 8 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 128 | 64K | YES | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||
![]() | AM29LV065DU101REI | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | TSOP1 | MO-142DD, TSOP-48 | 100 ns | 3 | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 3.3 V | 48 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | not_compliant | 48 | R-PDSO-G48 | 不合格 | 3.6 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.03 mA | 8MX8 | 1.2 mm | 8 | 0.000005 A | 67108864 bit | PARALLEL | FLASH | 3 V | YES | YES | YES | 128 | 64K | YES | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||
![]() | S29CD016J0PQAM11 | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | SPANSION INC | QFP | QFP, QFP80,.7X.9,32 | 54 ns | 66 MHz | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | QFP | QFP80,.7X.9,32 | RECTANGULAR | FLATPACK | 2.6 V | 80 | 无 | EAR99 | NOR型号 | 可进行同步突发模式操作 | 8542.32.00.51 | QUAD | 鸥翼 | 1 | 0.8 mm | unknown | 80 | R-PQFP-G80 | 不合格 | 2.75 V | AUTOMOTIVE | 2.5 V | ASYNCHRONOUS | 0.09 mA | 512KX32 | 3.35 mm | 32 | 0.00006 A | 16777216 bit | PARALLEL | FLASH | 2.7 V | 0.000065 ms | YES | YES | YES | 16,30 | 2K,16K | YES | BOTTOM | YES | 20 mm | 14 mm | ||||||||||||||||||||||||||||
![]() | AM29F010-70EE | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | TSOP | TSOP-32 | 70 ns | 3 | 131072 words | 128000 | 125 °C | -55 °C | PLASTIC/EPOXY | TSOP1 | TSSOP32,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 5 V | 32 | 无 | e0 | 3A001.A.2.C | NOR型号 | 锡铅 | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | not_compliant | 32 | R-PDSO-G32 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.05 mA | 128KX8 | 1.2 mm | 8 | 0.0001 A | 1048576 bit | PARALLEL | FLASH | 5 V | 1000000 Write/Erase Cycles | YES | YES | YES | 8 | 16K | 18.4 mm | 8 mm | |||||||||||||||||||||||||||||
![]() | S29AL032D90TFI043 | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | CYPRESS SEMICONDUCTOR CORP | LEAD FREE, MO-142DD, TSOP-48 | 90 ns | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 3 V | 48 | 有 | e3 | EAR99 | NOR型号 | 哑光锡 | 底部启动区块 | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | compliant | 40 | R-PDSO-G48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 2MX16 | 1.2 mm | 16 | 33554432 bit | PARALLEL | FLASH | 3 V | 8 | BOTTOM | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||||||||
![]() | S29AL032D90TFI043 | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | TSSOP, TSSOP48,.8,20 | 90 ns | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 48 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 0.5 mm | unknown | R-PDSO-G48 | 不合格 | INDUSTRIAL | 0.035 mA | 2MX16 | 16 | 0.000005 A | 33554432 bit | PARALLEL | FLASH | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | |||||||||||||||||||||||||||||||||||||||||
![]() | KLM8G1GEUF-B04QT59 | Samsung Electronics Co. Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | K9F1216D0A-YCB0 | Samsung Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | SAMSUNG SEMICONDUCTOR INC | 30 ns | 33554432 words | 32000000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 2.65 V | 48 | 无 | e0 | EAR99 | SLC NAND类型 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | 鸥翼 | 0.5 mm | compliant | R-PDSO-G48 | 不合格 | COMMERCIAL | 0.02 mA | 32MX16 | 16 | 0.00005 A | 536870912 bit | PARALLEL | FLASH | NO | NO | YES | 4K | 8K | 256 words | YES | ||||||||||||||||||||||||||||||||||||||||||
![]() | AS8F512K32P-150 | Micross Components | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | 活跃 | 微丝组件 | PGA, PGA66,11X11 | 150 ns | 524288 words | 512000 | 125 °C | -55 °C | CERAMIC, METAL-SEALED COFIRED | PGA | PGA66,11X11 | SQUARE | 网格排列 | 5 V | 66 | 无 | 3A001.A.2.C | NOR型号 | ALSO HAVING 8-BIT WIDTH | 8542.32.00.51 | PERPENDICULAR | PIN/PEG | 未说明 | 1 | 2.54 mm | compliant | 未说明 | S-CPGA-P66 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.24 mA | 512KX32 | 32 | 0.0065 A | 16777216 bit | MIL-STD-883 | PARALLEL | FLASH MODULE | 5 V | 16 | YES | YES | 32 | 16K | 29.718 mm | 29.718 mm | |||||||||||||||||||||||||||||||||
![]() | TS32GMTS800 | Transcend Information Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | TRANSCEND INFORMATION INC | 有 | unknown | FLASH MODULE | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | XC17128D-DD8R | AMD Xilinx | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | XILINX INC | 12.5 MHz | 131072 words | 128000 | 125 °C | -55 °C | CERAMIC | DIP | DIP8,.3 | RECTANGULAR | IN-LINE | 5 V | 8 | 无 | EAR99 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 2.54 mm | not_compliant | R-XDIP-T8 | 不合格 | MILITARY | 0.01 mA | 128KX1 | 3-STATE | 1 | 0.00005 A | 131072 bit | 38535Q/M;38534H;883B | COMMON | 配置存储器 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25LM25645GXDR00TR | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SFUI4096J1AE2TO-I-QT-2B1-STD | Swissbit | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Swissbit | Bulk | - | 2 W | High Reliability, MIL-PRF-39007 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | D52.27244S.001 | Apacer | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SDRAM - DDR4 | 288 Pin | + 85 C | 1.2 V | 8 GB | 3200 Mb/s | DIMM |