类别是'存储器 - 模块'
存储器 - 模块 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | JESD-609代码 | 无铅代码 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 并行/串行 | I/O类型 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 反向引脚排列 | 长度 | 宽度 | ||||||||||||||||||
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![]() | SST25VF010-20-4C-SAE-T | Microchip Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ES29LV400DB-70TC | Excel (Suzhou) Semiconductor Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | EXCEL SEMICONDUCTOR INC | TSSOP, TSSOP48,.8,20 | 70 ns | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 48 | 无 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 240 | 0.5 mm | unknown | R-PDSO-G48 | 不合格 | COMMERCIAL | 0.03 mA | 256KX16 | 16 | 0.00001 A | 4194304 bit | PARALLEL | FLASH | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | |||||||||||||||||||||||||||||
![]() | M25P40-VMN3TG | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | NUMONYX | SOIC | 0.150 INCH, ROHS COMPLIANT, PLASTIC, SO-8 | 25 MHz | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | RECTANGULAR | 小概要 | 3 V | 8 | Obsolete | e3/e4 | EAR99 | NOR型号 | MATTE TIN/NICKEL PALLADIUM GOLD | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | unknown | 未说明 | 8 | R-PDSO-G8 | 不合格 | 3.6 V | AUTOMOTIVE | 2.7 V | SYNCHRONOUS | 512KX8 | 1.75 mm | 8 | 4194304 bit | SERIAL | FLASH | 2.7 V | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||
![]() | M25P40-VMN3TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | STMICROELECTRONICS | SOIC | 0.150 INCH, ANTIMONY, TBBP-A FREE AND ROHS COMPLIANT, SOP-8 | 50 MHz | 1 | 524288 words | 512000 | 125 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | 小概要 | 3 V | 8 | 有 | e4 | 有 | EAR99 | NOR型号 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | 8 | R-PDSO-G8 | 不合格 | 3.6 V | AUTOMOTIVE | 2.7 V | SYNCHRONOUS | 0.015 mA | 512KX8 | 1.75 mm | 8 | 0.00005 A | 4194304 bit | SERIAL | FLASH | 2.7 V | SPI | 10000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 4.9 mm | 3.9 mm | ||||||||||||||||||
![]() | MZVL2512HCJQ-00B00 | Samsung Electronics Co. Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | APS25608N-OBR-BD | AP Memory | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX25U8035ZUI-25G | Macronix International Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | MACRONIX INTERNATIONAL CO LTD | SON | VSON, SOLCC8,.16,32 | 40 MHz | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSON | SOLCC8,.16,32 | SQUARE | SMALL OUTLINE, VERY THIN PROFILE | 1.8 V | 8 | 有 | EAR99 | NOR型号 | ALSO CONFIGURABLE AS 8M X 1, 10 YEAR DATA RETENTION | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 0.8 mm | unknown | 未说明 | 8 | S-PDSO-N8 | 不合格 | 2 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.022 mA | 2MX4 | 0.6 mm | 4 | 0.000005 A | 8388608 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 4 mm | 4 mm | ||||||||||||||||||||
![]() | SST45LF010-10-4C-SAE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SILICON STORAGE TECHNOLOGY INC | SOIC | 4.90 X 6 MM, MS-012AA, LEAD FREE, SOIC-8 | 10 MHz | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | SOP | SOP8,.25 | RECTANGULAR | 小概要 | 3.3 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | 8 | R-PDSO-G8 | 不合格 | 3.6 V | COMMERCIAL | 3 V | SYNCHRONOUS | 0.03 mA | 1MX1 | 1.75 mm | 1 | 0.000015 A | 1048576 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||
![]() | K9F2816Q0C-HCB0 | Samsung Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | SAMSUNG SEMICONDUCTOR INC | 40 ns | 8388608 words | 8000000 | 70 °C | PLASTIC/EPOXY | FBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 1.8 V | 63 | Obsolete | EAR99 | SLC NAND类型 | 8542.32.00.51 | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B63 | 不合格 | COMMERCIAL | 0.015 mA | 8MX16 | 16 | 0.00005 A | 134217728 bit | PARALLEL | FLASH | NO | NO | YES | 1K | 8K | 256 words | YES | ||||||||||||||||||||||||||||||||||
![]() | SST37VF040-70-3C-PHE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | Transferred | SILICON STORAGE TECHNOLOGY INC | DIP | DIP, DIP32,.6 | 70 ns | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | DIP | DIP32,.6 | RECTANGULAR | IN-LINE | 3 V | 32 | 有 | e3 | EAR99 | NOR型号 | 哑光锡 | 8542.32.00.51 | DUAL | THROUGH-HOLE | 260 | 1 | 2.54 mm | unknown | 32 | R-PDIP-T32 | 不合格 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.02 mA | 512KX8 | 5.08 mm | 8 | 0.000015 A | 4194304 bit | PARALLEL | FLASH | 2.7 V | NO | NO | NO | 41.91 mm | 15.24 mm | |||||||||||||||||||||||
![]() | MBM29LV800B-10PFTN | FUJITSU Limited | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | FUJITSU LTD | PLASTIC, TSOP1-48 | 100 ns | 1048576 words | 1000000 | 70 °C | PLASTIC/EPOXY | TSOP1 | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3.3 V | 48 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | CAN ALSO BE CONFIGURABLE AS 512K X 16 ;100K PROGRAM/ERASE CYCLE MIN | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | R-PDSO-G48 | 不合格 | 3.6 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.035 mA | 1MX8 | 1.2 mm | 8 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 3 V | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | 18.4 mm | 12 mm | |||||||||||||||||||
![]() | RD48F4040LVYTQ0 | Intel Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | INTEL CORP | BGA | 8 X 11 MM, 1.20 MM HEIGHT, SCSP-88 | 88 ns | 33554432 words | 32000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | BGA88,8X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 可进行同步突发模式操作 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | compliant | 88 | R-PBGA-B88 | 不合格 | 2 V | OTHER | 1.7 V | ASYNCHRONOUS | 0.05 mA | 32MX16 | 1.2 mm | 16 | 0.000005 A | 536870912 bit | PARALLEL | FLASH | 1.8 V | NO | NO | YES | 8, 510 | 16K,64K | 4 words | TOP | YES | 11 mm | 8 mm | |||||||||||||||||
![]() | RD48F4040LVYTQ0 | Numonyx Memory Solutions | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | NUMONYX | BGA | 8 X 11 MM, 1.20 MM HEIGHT, SCSP-88 | 88 ns | 33554432 words | 32000000 | 85 °C | -25 °C | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | 1.8 V | 88 | Obsolete | EAR99 | NOR型号 | 可进行同步突发模式操作 | 8542.32.00.51 | BOTTOM | BALL | 240 | 1 | 0.8 mm | unknown | 30 | 88 | R-PBGA-B88 | 不合格 | 2 V | OTHER | 1.7 V | ASYNCHRONOUS | 32MX16 | 1.2 mm | 16 | 536870912 bit | PARALLEL | FLASH | 1.8 V | TOP | 11 mm | 8 mm | ||||||||||||||||||||||||||||
![]() | SST29SF040-55-4I-WHE | Greenliant Systems Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | GREENLIANT SYSTEMS LTD | TSSOP, TSSOP32,.56,20 | 55 ns | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 5 V | 32 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 0.5 mm | compliant | R-PDSO-G32 | 不合格 | INDUSTRIAL | 0.03 mA | 512KX8 | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | YES | YES | 4K | 128 | ||||||||||||||||||||||||||||||||||
![]() | SST29SF040-55-4I-WHE | Microchip Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | MICROCHIP TECHNOLOGY INC | TSOP1 | 8 X 14 MM, ROHS COMPLIANT, MO-142BA, TSOP1-32 | 55 ns | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 5 V | 32 | 有 | e3 | 有 | EAR99 | NOR型号 | 哑光锡 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | compliant | 32 | R-PDSO-G32 | 不合格 | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 512KX8 | 1.2 mm | 8 | 4194304 bit | PARALLEL | FLASH | 5 V | 12.4 mm | 8 mm | ||||||||||||||||||||||||||||
![]() | SST29SF040-55-4I-WHE | Silicon Storage Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | SILICON STORAGE TECHNOLOGY INC | TSOP1 | TSOP1, TSSOP32,.56,20 | 55 ns | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | TSSOP32,.56,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 5 V | 32 | 有 | e3 | EAR99 | NOR型号 | 哑光锡 | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | unknown | 32 | R-PDSO-G32 | 不合格 | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 512KX8 | 1.2 mm | 8 | 0.0001 A | 4194304 bit | PARALLEL | FLASH | 5 V | YES | YES | 4K | 128 | 12.4 mm | 8 mm | |||||||||||||||||||||
![]() | EN25S20A-104WIP2SF | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VDFN-8 | 104 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 1.8 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.02 mA | 256KX8 | 3-STATE | 0.8 mm | 8 | 0.00001 A | 2097152 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 6 mm | 5 mm | |||||||||||||||||||||||
![]() | S29AL008D70TAI010 | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | TSSOP, TSSOP48,.8,20 | 70 ns | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 48 | 无 | e0 | EAR99 | NOR型号 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | 鸥翼 | 0.5 mm | unknown | R-PDSO-G48 | 不合格 | INDUSTRIAL | 0.035 mA | 512KX16 | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 1000000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | ||||||||||||||||||||||||||||
![]() | AM29PL160CB-90SKI | AMD | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | ADVANCED MICRO DEVICES INC | SOIC | SOP, SOP44,.63 | 90 ns | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP44,.63 | RECTANGULAR | 小概要 | 3 V | 44 | 无 | e0 | EAR99 | NOR型号 | Tin/Lead (Sn/Pb) | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.05 mA | 1MX16 | 2.8 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,224K,256K | 8/16 words | BOTTOM | YES | YES | 28.2 mm | 13.3 mm | ||||||||||||||||
![]() | AM29PL160CB-90SKI | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | SOIC | REVERSE, MO-180AA, SOP-44 | 90 ns | 3 | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP44,.63 | RECTANGULAR | 小概要 | 3 V | 44 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | unknown | 44 | R-PDSO-G44 | 不合格 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.05 mA | 1MX16 | 2.8 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,224K,256K | 8/16 words | BOTTOM | YES | YES | 28.2 mm | 13.3 mm | ||||||||||||||
![]() | CY27C128-45JC | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | CYPRESS SEMICONDUCTOR CORP | QFJ | PLASTIC, LCC-32 | 45 ns | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 5 V | 32 | 无 | e0 | EAR99 | 锡铅 | 8542.32.00.71 | QUAD | J BEND | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.045 mA | 16KX8 | 3-STATE | 8 | 131072 bit | PARALLEL | COMMON | OTP ROM | 12.5 V | ||||||||||||||||||||||||||||||
![]() | CY27C128-45JC | Rochester Electronics LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ROCHESTER ELECTRONICS LLC | QCCJ, | 45 ns | 16384 words | 16000 | 70 °C | PLASTIC/EPOXY | QCCJ | RECTANGULAR | CHIP CARRIER | 5 V | 32 | 接触制造商 | e0 | EAR99 | 锡铅 | 8542.32.00.71 | QUAD | J BEND | 1 | unknown | R-PQCC-J32 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 16KX8 | 8 | 131072 bit | PARALLEL | OTP ROM | ||||||||||||||||||||||||||||||||||||||||
![]() | AM29F800T-120EC | Spansion | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | SPANSION INC | TSOP | TSOP-48 | 120 ns | 3 | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | 小概要 | 5 V | 48 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | TOP BOOT BLOCK | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | not_compliant | 48 | R-PDSO-G48 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.06 mA | 512KX16 | 1.2 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 5 V | 100000 Write/Erase Cycles | 0.00012 ms | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | 18.4 mm | 12 mm | ||||||||||||||
![]() | AM29F800T-120EC | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | CYPRESS SEMICONDUCTOR CORP | 120 ns | 524288 words | 512000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 5 V | 48 | 无 | NOR型号 | DUAL | 鸥翼 | 0.5 mm | compliant | R-PDSO-G48 | 不合格 | 5 V | COMMERCIAL | 0.06 mA | 512KX16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | |||||||||||||||||||||||||||||||||
![]() | EN29SL800B-90MIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VFBGA, BGA48,6X11,20 | 90 ns | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 48 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.5 mm | unknown | R-PBGA-B48 | 不合格 | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 0.73 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 1.8 V | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | 6 mm | 5 mm |