类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||
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 | CYD09S72V-133BBC | Rochester Electronics, LLC | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 484-BGA | 484-FBGA (23x23) | Volatile | 0°C~70°C TA | Tray | Obsolete | 3 (168 Hours) | 1.42V~1.58V 1.7V~1.9V | 9Mb 128K x 72 | 133MHz | 4.4ns | SRAM | Parallel | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS6C6264-55SCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 28-SOIC (0.330, 8.38mm Width) | YES | 28 | Volatile | 0°C~70°C TA | Tube | 2005 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | 2.7V~5.5V | DUAL | 260 | 1 | 3V | 40 | 28 | 3V | 5.5V | 3/5V | 2.7V | 64Kb 8K x 8 | 1 | SRAM | Parallel | 8KX8 | 3-STATE | 8 | 55ns | 13b | 64 kb | 55 ns | COMMON | 3.048mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M93C76-RMN3TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 2.5V | 1.27mm | M93C76 | 5.5V | Serial | 4Kb 512 x 8 256 x 16 | 1.5mA | 2MHz | 200 ns | EEPROM | SPI | 512X16 | 5ms | 8 kb | MICROWIRE | 4ms | 1.5mm | 5mm | 4mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29GL256FHXFI-90Q | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 64-LBGA, CSPBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | 2017 | MX29GL | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 1mm | 未说明 | 64 | R-PBGA-B64 | 不合格 | 3.6V | 3.3V | 2.7V | 256Mb 32M x 8 | ASYNCHRONOUS | FLASH | Parallel | 16MX16 | 16 | 90ns | 256 Mb | 0.00001A | 100 ns | 3V | 8 | YES | YES | YES | 256 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 11mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1313KV18-250BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | 3A991 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1313 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 1M x 18 | 2 | 440mA | 250MHz | 450 ps | SRAM | Parallel | 1MX18 | 3-STATE | 18 | 18b | 18 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC320AX-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC320A | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 10MHz | 160 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62256VLL-70ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | YES | Volatile | 0°C~70°C TA | Tray | 2002 | MoBL® | e4 | 活跃 | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.55mm | unknown | 70GHz | 20 | CY62256 | 28 | R-PDSO-G28 | 不合格 | 3V | 3.6V | 2.7V | 256Kb 32K x 8 | 0.03mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 70ns | 256 kb | 70 ns | COMMON | 1.4V | 1.2mm | 11.8mm | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021CV33-10ZXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | 44-TSOP II | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 1996 | Obsolete | 3 (168 Hours) | 70°C | 0°C | 3V~3.6V | 10GHz | CY7C1021 | 3.3V | Parallel | 3.63V | 2.97V | 1Mb 64K x 16 | 1 | 90mA | 10ns | SRAM | Parallel | 10ns | 16b | 1 Mb | Asynchronous | 16b | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24AA024-I/STG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 256 | PLASTIC/EPOXY | TSSOP8,.25 | -40 °C | 40 | 85 °C | 有 | 24AA024-I/STG | 0.4 MHz | 256 words | 2.5 V | TSSOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.4 | SOIC | YES | 8 | 8 | Compliant | Bulk | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.7 V | I2C, Serial | 5.5 V | 1.7 V | 256 B | SYNCHRONOUS | 0.003 mA | 900 ns | 256X8 | 1.2 mm | 8 | 2 kb | 0.000001 A | 2048 bit | 400 kHz | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 200 | HARDWARE | 1010DDDR | 4.4 mm | 3 mm | 无 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC56C-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 小概要 | 1 | 128 | PLASTIC/EPOXY | SOP8,.25 | -40 °C | 40 | 85 °C | 有 | 93LC56C-I/SNG | 2 MHz | 128 words | 5 V | SOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | SOIC | 5.13 | YES | 8 | SOP, SOP8,.25 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 3/5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 0.002 mA | 128X16 | 1.75 mm | 16 | 0.000001 A | 2048 bit | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 6 ms | 200 | SOFTWARE | 8 | 4.9 mm | 3.9 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27C4002-70C1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-LCC (J-Lead) | 44 | 44-PLCC (16.51x16.51) | Non-Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 70°C | 0°C | 4.5V~5.5V | M27C4002 | 5V | Parallel | 5.5V | 4.5V | 4Mb 256K x 16 | 70mA | 70ns | EPROM | Parallel | 4 Mb | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128LAGNFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FL-L | 活跃 | 3 (168 Hours) | 8 | IT ALSO HAVE MEMORY WIDTH X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-N8 | 3.6V | 2.7V | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI | 32MX4 | 4 | 134217728 bit | SERIAL | 3V | 2 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC010T-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 11LC010 | 8 | 5V | Serial | 1Kb 128 x 8 | 5mA | 100kHz | EEPROM | 单线 | 8 | 5ms | 1 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29AL016J55TFIR20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | AL-J | e3 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) | 底部启动区块 | 8542.32.00.51 | 3V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 3.3V | 3.6V | 3V | 16Mb 2M x 8 1M x 16 | 12mA | FLASH | Parallel | 8b | 1MX16 | 16 | 55ns | 16 Mb | 0.000005A | 55 ns | Asynchronous | 3V | 8 | YES | YES | YES | 12131 | 16K8K32K64K | YES | BOTTOM | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25L080F-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 10 | BR25L080 | 8 | 不合格 | 5V | SPI, Serial | 8Kb 1K x 8 | SYNCHRONOUS | 5MHz | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1.6mm | 5mm | 4.4mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24FC64T-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | 3A991.A.2 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | 24FC64 | 8 | 5.5V | 2/5V | 1.7V | I2C, Serial | 64Kb 8K x 8 | 3mA | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S32400F-7TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 86 | 3V~3.6V | DUAL | 3.3V | 0.5mm | 不合格 | 3.3V | 128Mb 4M x 32 | 100mA | 143MHz | 5.4ns | DRAM | Parallel | 32b | 4MX32 | 3-STATE | 32 | 12b | 128 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TE28F128J3C150 | Intel | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 56 | Compliant | Bulk | 150 GHz | 122.1 MB | 150 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB041E-SSHN2B-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2012 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | ALSO OPERATES MIN 1.65 V AT 70 MHZ | 1.65V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 不合格 | 1.8V | 3.6V | 2.3V | SPI, Serial | 4Mb 256Bytes x 2048 pages | 15mA | 15mA | 85MHz | 7 ns | FLASH | SPI | 8b | 4MX1 | 8μs, 3ms | 19b | 4 Mb | 0.000001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.5mm | 5.05mm | 3.99mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24T128FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 1.6V~5.5V | DUAL | 225 | 1 | 2.5V | 1.27mm | 未说明 | BR24T128 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 400kHz | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M93C86-MN6T | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 锡铅 | 4.5V~5.5V | DUAL | 1 | 5V | 1.27mm | M93C86 | 8 | 5V | 5V | Serial | 16Kb 2K x 8 1K x 16 | 2mA | 2MHz | 200 ns | EEPROM | SPI | 1KX16 | 3-STATE | 16 | 5ms | 16 kb | 0.000015A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SAGMFI011 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2014 | FL-S | 活跃 | 3 (168 Hours) | 16 | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 64MX4 | 4 | 1b | 256 Mb | 0.0001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 2.65mm | 10.3mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS4C2M32S-6BIN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 90-TFBGA | YES | 90 | Volatile | -40°C~85°C TA | Tray | 2013 | 活跃 | 3 (168 Hours) | 90 | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 3.3V | 3.6V | 3V | 64Mb 2M x 32 | 1 | 166MHz | 5.4ns | DRAM | Parallel | 32b | 2MX32 | 3-STATE | 32 | 2ns | 10b | 64 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 13mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC56AT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93LC56A | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV10248BLL-10TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 2.4V~3.6V | 8Mb 1M x 8 | 2 | 100mA | SRAM | Parallel | 10ns | 20b | 8 Mb | Asynchronous | 8b | ROHS3 Compliant |