类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | 24LC02BT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2000 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC02B | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL512SAGMFVG13 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | FL-S | e3 | 活跃 | 3 (168 Hours) | 16 | Matte Tin (Sn) | IT ALSO HAVE MEMORY WIDTH X1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | R-PDSO-G16 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 133MHz | 0.061mA | FLASH | SPI - Quad I/O | 64MX8 | 8 | 0.0001A | 512753664 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256S90FHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 锡银铜 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 256Mb 16M x 16 | 60mA | 90ns | FLASH | Parallel | 16MX16 | 16 | 60ns | 24b | 256 Mb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 256 | 64K | 32B | YES | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1041CV33-10ZSXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | 1996 | yes | Discontinued | 3 (168 Hours) | 3V~3.6V | 1MHz | CY7C1041 | 44 | 3.3V | 4Mb 256K x 16 | 1 | 100mA | SRAM | Parallel | 10ns | 18b | 4 Mb | Asynchronous | 16b | 1.044mm | 18.52mm | 10.262mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF200A-70-4C-M1QE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-WFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.5mm | 40 | SST39VF200A | 48 | 3.3V | 3.6V | 2.7V | 2Mb 128K x 16 | 30mA | 70ns | FLASH | Parallel | 16b | 128KX16 | 16 | 20μs | 17b | 2 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 64 | 2K | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62C256AL-45ULI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 28-SOIC (0.330, 8.38mm Width) | YES | 28 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 1 | 5V | 28 | 5V | 5V | 5V | 256Kb 32K x 8 | 1 | 25mA | SRAM | Parallel | 32KX8 | 3-STATE | 45ns | 15b | 256 kb | 0.00002A | 22MHz | 45 ns | COMMON | Asynchronous | 8b | 2.84mm | 18.24mm | 8.53mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM22LD16-55-BG | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | F-RAM™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.71 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3.3V | 0.75mm | 未说明 | FM22LD16 | 48 | 不合格 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 12mA | ASYNCHRONOUS | FRAM | Parallel | 16b | 256KX16 | 16 | 110ns | 4 Mb | 0.00015A | 55 ns | 16b | 1.2mm | 8mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W947D6HBHX6E | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 60-TFBGA | 60 | Volatile | -25°C~85°C TC | Tray | 2011 | 活跃 | 3 (168 Hours) | 60 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | 1.7V~1.95V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 60 | 不合格 | 1.8V | 1.95V | 1.7V | 128Mb 8M x 16 | 1 | 50mA | SYNCHRONOUS | 166MHz | 5ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | 15ns | 14b | 128 Mb | 0.00001A | COMMON | 4096 | 24816 | 24816 | 1.025mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC56CT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 3V | 0.5mm | 93LC56C | 8 | 5.5V | 2.5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | SYNCHRONOUS | 3MHz | 200 ns | EEPROM | SPI | 16 | 6ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 200 | SOFTWARE | 8 | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC640-I/SNG | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC640 | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 64Kb 8K x 8 | 5mA | 2MHz | 230 ns | EEPROM | SPI | 8 | 5ms | 64 kb | 0.000001A | SPI | 100000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| M95640-DFMC6TG | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 8 | EAR99 | ALSO OPERATES 1.7 V SUPPLY AT 5MHZ | 1.7V~5.5V | DUAL | 1 | 5V | 0.5mm | M95640 | 8 | 5.5V | 4.5V | SPI, Serial | 64Kb 8K x 8 | 5mA | 20MHz | 20 ns | EEPROM | SPI | 8 | 5ms | 64 kb | SPI | 5ms | 0.6mm | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL032N90TFI043 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | GL-N | e3 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 不合格 | 3V | 3.6V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 2MX16 | 16 | 90ns | 32 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 863 | 8K64K | 8/16words | YES | BOTTOM | YES | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC040AT-E/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 0.5mm | 40 | 25LC040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S32800G-7BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 90-TFBGA | 90 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 90 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 90 | 不合格 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 150mA | SYNCHRONOUS | 210mA | 143MHz | 5.4ns | DRAM | Parallel | 32b | 8MX32 | 3-STATE | 32 | 14b | 256 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 13mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28HC64B-90TU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 28 | 4.5V~5.5V | DUAL | 1 | 5V | 0.55mm | R-PDSO-G28 | 5.5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | 90ns | EEPROM | Parallel | 8KX8 | 8 | 10ms | 65536 bit | 5V | 10ms | 1.2mm | 11.8mm | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2270KV18-550BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C2270 | 不合格 | 1.8V | 36Mb 1M x 36 | 1 | 550MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 36 Mb | 0.36A | COMMON | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25H010FJ-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED AND ALSO OPERATES AT 2.5V WITH 5MHZ | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 1Kb 128 x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | 1024 bit | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064S70TFA030 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-S | 活跃 | 3 (168 Hours) | 48 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | R-PDSO-G48 | 3.6V | 2.7V | 64Mb 4M x 16 | ASYNCHRONOUS | 70ns | FLASH | Parallel | 4MX16 | 16 | 60ns | 67108864 bit | AEC-Q100 | 3V | 8 | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S70FL01GSAGMFV010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tray | 2016 | FL-S | 活跃 | 3 (168 Hours) | 16 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | R-PDSO-G16 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 1Gb 128M x 8 | 133MHz | 0.1mA | FLASH | SPI - Quad I/O | 1GX1 | 1 | 32b | 1 Gb | 0.0003A | 3V | SPI | 1000000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 512B | 2.65mm | 10.3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C04D-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Automotive grade | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | ALSO OPERATES 1.7V AT 100 KHZ | 8542.32.00.51 | 1.7V~3.6V | DUAL | 1 | 1.8V | 0.5mm | AT24C04 | R-PDSO-N8 | 3.6V | 1.7V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 4.5μs | EEPROM | I2C | 512X8 | OPEN-DRAIN | 8 | 5ms | 8e-7A | 4096 bit | ISO/TS-16949 | SERIAL | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | YES | 16words | 1010DDMR | NO | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | 71V3576S133PFG | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 100-LQFP | Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 3.135V~3.465V | IDT71V3576 | 4.5Mb 128K x 36 | 133MHz | 4.2ns | SRAM | Parallel | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S32400F-6BL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 表面贴装 | 90-TFBGA | 90 | Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 90 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | BOTTOM | 1 | 3.3V | 0.8mm | 90 | 3.3V | 3.6V | 3V | 128Mb 4M x 32 | 1 | 150mA | 166MHz | 5.4ns | DRAM | Parallel | 32b | 4MX32 | 3-STATE | 32 | 14b | 128 Mb | 0.002A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 13mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1041G30-10ZSXET | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2014 | yes | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | 8542.32.00.41 | 2.2V~3.6V | DUAL | 未说明 | 1 | 3V | 0.8mm | 未说明 | CY7C1041 | R-PDSO-G44 | 3.6V | 2.2V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 10ns | 4194304 bit | 10 ns | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL01GS12DHIV20 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | GL-S | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 1Gb 64M x 16 | 60mA | 120ns | FLASH | Parallel | 16b | 128MX8 | 8 | 60ns | 26b | 1 Gb | 0.0001A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 64K | 32B | YES | YES | 1.4mm | 9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LPS25636A-200TQLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 100-LQFP | 100 | 100-TQFP (14x20) | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 2 (1 Year) | 85°C | -40°C | 3.135V~3.465V | 200MHz | 3.3V | Parallel | 3.465V | 3.135V | 9Mb 256K x 36 | 4 | 275mA | 200MHz | 3.1ns | SRAM | Parallel | 18b | 9 Mb | 200MHz | Synchronous | 36b | ROHS3 Compliant |