类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 最大功率耗散 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 逻辑功能 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 时间格式 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 自我刷新 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||
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 | AT24C512BN-SH25-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | 1997 | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.5V~5.5V | 1MHz | AT24C512 | 3.6V | 2-Wire, I2C, Serial | 5.5V | 2.5V | 512Kb 64K x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 5ms | 512 kb | 1MHz | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AM29F040B-70JF | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | 32-PLCC (11.43x13.97) | Non-Volatile | -40°C~85°C TA | Tray | 2000 | Obsolete | 3 (168 Hours) | 85°C | -40°C | 4.5V~5.5V | 5V | Parallel | 5.5V | 4.5V | 4Mb 512K x 8 | 70ns | FLASH | Parallel | 70ns | 19b | 4 Mb | 85°C | 3.556mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF010-70-4C-NHE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | e3 | yes | 活跃 | 3 (168 Hours) | 32 | 3A991.B.1.A | 2.7V~3.6V | QUAD | 245 | 1 | 3V | 1.27mm | 40 | SST39VF010 | 3.3V | 3.6V | 2.7V | 1Mb 128K x 8 | 20mA | 70ns | FLASH | Parallel | 8b | 128KX8 | 8 | 20μs | 17b | 1 Mb | 0.000015A | Asynchronous | 8b | YES | YES | YES | 32 | 4K | 3.556mm | 13.97mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93L66RFVM-WTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Copper (Sn97.5Cu2.5) | 8542.32.00.51 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 10 | BR93L66 | 8 | R-PDSO-G8 | 不合格 | 5V | 1.8V | Serial | 4Kb 256 x 16 | SYNCHRONOUS | 2MHz | 2 μs | EEPROM | SPI | 256X16 | 16 | 5ms | 0.000002A | 4096 bit | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF3202-70-4I-EKE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Industrial grade | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2000 | SST39 MPF™ | e3 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) - annealed | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | SST39VF3202 | 48 | 3.3V | 3.6V | 2.7V | 32Mb 2M x 16 | 18mA | 18mA | 70ns | FLASH | Parallel | 16b | 2MX16 | 16 | 10μs | 21b | 32 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 2K | TOP | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L12845EMI-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2009 | MX25xxx45 - MXSMIO™ | 不用于新设计 | 3 (168 Hours) | 16 | 3A991.B.1.A | ALSO CONFIGURABLE AS 128M X 1, 20 YEAR DATA RETENTION | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 16 | R-PDSO-G16 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 32MX4 | 4 | 300μs, 5ms | 128 Mb | 0.00004A | 3V | SPI | 100000 Write/Erase Cycles | 5ms | 20 | HARDWARE/SOFTWARE | 2 | 2.65mm | 10.3mm | 7.52mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256S10DHIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2014 | GL-S | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 8542.32.00.51 | 1.65V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | 256Mb 16M x 16 | 60mA | 100ns | FLASH | Parallel | 16b | 32MX8 | 8 | 60ns | 24b | 256 Mb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 256 | 64K | 32B | YES | BOTTOM/TOP | YES | 1.4mm | 9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 23A256T-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 1.7V~1.95V | DUAL | 260 | 1 | 1.8V | 0.65mm | 40 | 23A256 | 8 | 1.8V | SPI, Serial | 256Kb 32K x 8 | 1 | 10mA | 20MHz | 32 ns | SRAM | SPI | 3-STATE | 8 | 1b | 256 kb | 5e-7A | SEPARATE | Synchronous | 8b | 4.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC08BH-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC08BH | 8 | 5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC02BH-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2000 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 0.65mm | 40 | 24LC02BH | 8 | 不合格 | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24AA32AT-I/STG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | TSSOP, TSSOP8,.25 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 4000 | PLASTIC/EPOXY | TSSOP8,.25 | -40 °C | 40 | 85 °C | 有 | 24AA32AT-I/STG | 0.1 MHz | 4096 words | 2.5 V | TSSOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.22 | SOIC | YES | 8 | 8 | Compliant | Tape & Reel (TR) | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.7 V | I2C, Serial | 5.5 V | 1.8 V | 4 kB | SYNCHRONOUS | 0.003 mA | 900 ns | 4KX8 | 1.2 mm | 8 | 32 kb | 0.000001 A | 32768 bit | 400 kHz | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 200 | HARDWARE | 1010DDDR | 4.4 mm | 3 mm | 无 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27C2001-70C6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-LCC (J-Lead) | 32 | Non-Volatile | -40°C~85°C TA | Tube | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 1.27mm | 10 | M27C2001 | 32 | 不合格 | 5V | 5V | 2Mb 256K x 8 | 50mA | ASYNCHRONOUS | 70ns | EPROM | Parallel | 256KX8 | 3-STATE | 2 Mb | 0.0001A | COMMON | 2.8mm | 14.05mm | 11.51mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC58NVG0S3HTA00 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | DUAL | 1 | 3.3V | 0.5mm | R-PDSO-G48 | 3.6V | 2.7V | 1Gb 128M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX8 | 8 | 25ns | 1073741824 bit | 3.3V | 1.2mm | 18.4mm | 12mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA014HT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24AA014H | 8 | 5V | 1.7V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | I2C | 5ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT24CS64-SSHM-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | AT24CS64 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | 1MHz | 550ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 1.75mm | 4.925mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA02/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 1999 | e3 | yes | 活跃 | 不适用 | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 1.7V~5.5V | DUAL | 1 | 3V | 2.54mm | 24AA02 | 8 | 5.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 2 kb | I2C | 10ms | 4.064mm | 9.9695mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29LV320ETTI-70G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2003 | MX29LV | e3 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Matte Tin (Sn) | TOP BOOT BLOCK | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 48 | R-PDSO-G48 | 不合格 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 | ASYNCHRONOUS | FLASH | Parallel | 2MX16 | 16 | 70ns | 32 Mb | 0.000015A | 70 ns | 3V | 8 | YES | YES | YES | 863 | 8K64K | YES | TOP | YES | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62168DV30LL-55BVI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2003 | MoBL® | e0 | no | Obsolete | 3 (168 Hours) | 48 | Tin/Lead (Sn/Pb) | 2.2V~3.6V | BOTTOM | 220 | 1 | 3V | 0.75mm | CY62168 | 48 | 3V | 3.6V | 2.2V | 16Mb 2M x 8 | 1 | 30mA | SRAM | Parallel | 2MX8 | 3-STATE | 8 | 55ns | 21b | 16 Mb | 55 ns | COMMON | Asynchronous | 8b | 9.5mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA32AF-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | NOT APPLICABLE | 1 | 5V | 2.54mm | NOT APPLICABLE | 24AA32AF | 8 | 不合格 | 5.5V | 2/5V | 1.7V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DDDR | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1061DV33-10ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tube | 1996 | e3 | yes | Obsolete | 3 (168 Hours) | 54 | Matte Tin (Sn) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 20 | CY7C1061 | 54 | 3.3V | 3.6V | 3V | 16Mb 1M x 16 | 1 | 175mA | 175mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 20b | 16 Mb | 0.025A | COMMON | Asynchronous | 16b | 2V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16400J-6TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tray | e3 | 活跃 | 3 (168 Hours) | 54 | EAR99 | Matte Tin (Sn) | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | 54 | 3.3V | 3.6V | 3V | 64Mb 4M x 16 | 1 | 100mA | 166MHz | 5.4ns | DRAM | Parallel | 16b | 4MX16 | 3-STATE | 16 | 14b | 64 Mb | COMMON | 4096 | 1248FP | 1248 | NO | YES | 1.2mm | 22.22mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B104M-ZSP45XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | e3 | 活跃 | 3 (168 Hours) | 54 | 3A991.B.2.A | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B104 | 54 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 52mA | Clock | NVSRAM | Parallel | 16b | 256KX16 | 16 | 45ns | 4 Mb | 0.005A | 45 ns | 16b | HH:MM:SS | 1.2mm | 22.415mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25V20A-DG | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | F-RAM™ | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 2V~3.6V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | 3.3V | 3.6V | 2V | SPI, Serial | 2Mb 256K x 8 | 3mA | SYNCHRONOUS | 40MHz | 16 ns | FRAM | SPI | 8b | 8 | 2 Mb | 8b | 6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY62167DV30LL-55BVI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tray | 2003 | MoBL® | e0 | no | Obsolete | 3 (168 Hours) | 48 | Tin/Lead (Sn/Pb) | 2.2V~3.6V | BOTTOM | 220 | 1 | 3V | 0.75mm | 1MHz | CY62167 | 48 | 3V | 3.6V | 2.2V | 16Mb 2M x 8 1M x 16 | 1 | 30mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 20b | 16 Mb | 55 ns | COMMON | Asynchronous | 16b | 9.5mm | 无 | 无SVHC | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC32A-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC32A | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 32Kb 4K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 |