类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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 | S29GL512P11FFI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | GL-P | e1 | Obsolete | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | 512Mb 32M x 16 | 110mA | FLASH | Parallel | 8b | 512MX1 | 1 | 110ns | 512 Mb | 0.000005A | 110 ns | Asynchronous | 3V | 8 | YES | YES | YES | 512 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | IDT71256SA15PZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | 28-TSOP | Volatile | 0°C~70°C TA | Tube | Obsolete | 3 (168 Hours) | 4.5V~5.5V | IDT71256 | 256Kb 32K x 8 | 15ns | SRAM | Parallel | 15ns | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2263KV18-550BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C2263 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 2 | 550MHz | SRAM | Parallel | 18 | 19b | 36 Mb | 0.45 ns | 1.4mm | 15mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29GL512FHXFI-10Q | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 64-LBGA, CSPBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | MX29GL | e1 | 不用于新设计 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | 2.7V~3.6V | BOTTOM | 260 | 1 | 3.3V | 1mm | 40 | R-PBGA-B64 | 不合格 | 3.6V | 3/3.3V | 3V | 512Mb 64M x 8 | ASYNCHRONOUS | FLASH | Parallel | 32MX16 | 16 | 100ns | 0.00002A | 536870912 bit | 100 ns | 3V | 8 | YES | YES | YES | 512 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 11mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1512KV18-333BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1512 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 810mA | 333MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 21b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | S29AL032D70TFI030 | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS34ML02G084-TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.5mm | 未说明 | R-PDSO-G48 | 3.6V | 2.7V | 2Gb 256M x 8 | ASYNCHRONOUS | FLASH | Parallel | 256MX8 | 8 | 25ns | 2147483648 bit | 3.3V | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29GL512T11DHV013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | -40°C | YES | 105°C | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 64 | 8542.32.00.51 | BOTTOM | BALL | 1 | 3V | 1mm | S-PBGA-B64 | 3.6V | INDUSTRIAL | 2.7V | ASYNCHRONOUS | 32MX16 | 16 | 536870912 bit | 110 ns | PARALLEL | FLASH | 2.7V | 8 | 1.4mm | 9mm | 9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | JS28F128M29EWHF | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Tin | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | e3 | yes | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | JS28F128 | 3/3.3V | 2.7V | 128Mb 16M x 8 8M x 16 | 25mA | FLASH | Parallel | 8MX16 | 16 | 70ns | 128 Mb | 0.00012A | 75 ns | Asynchronous | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | N25Q064A13EF640E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 30 | N25Q064 | 8 | 3/3.3V | 2.7V | SPI, Serial | 64Mb 16M x 4 | 20mA | 108MHz | 7 ns | FLASH | SPI | 1MX64 | 8ms, 5ms | 1b | 64 Mb | 0.0001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 850μm | 6mm | 5mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93G76FVM-3GTTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | 1.7V~5.5V | BR93G76 | Serial | 8Kb 1K x 8 512 x 16 | 3MHz | 200 ns | EEPROM | SPI | 5ms | 8 kb | 3-WIRE | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1371DV33-133AXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | -40°C~85°C TA | Tray | 2004 | NoBL™ | e3 | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.B | MATTE TIN (800) | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 40 | CY7C1371 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 210mA | 133MHz | 6.5ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS34ML01G084-TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.5mm | 未说明 | R-PDSO-G48 | 3.6V | 2.7V | 1Gb 128M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX8 | 8 | 25ns | 1073741824 bit | 3.3V | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST26WF080BT-104I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 30 | SST26WF080 | R-PDSO-N8 | 1.95V | 1.65V | SPI | 8Mb 1M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 80MX1 | 1 | 1.5ms | 83886080 bit | TS 16949 | SERIAL | 1.8V | 0.8mm | 6mm | 5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62147EV30LL-55ZSXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~125°C TA | Tube | 2001 | MoBL® | e4 | yes | Discontinued | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 1MHz | 20 | CY62147 | 44 | 3V | 3.6V | 2.2V | 4Mb 256K x 16 | 1 | 25mA | SRAM | Parallel | 3-STATE | 55ns | 18b | 4 Mb | 55 ns | COMMON | Asynchronous | 16b | 1.044mm | 18.52mm | 10.262mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W25X10VSNIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | SpiFlash® | e3 | yes | Obsolete | 3 (168 Hours) | 8 | EAR99 | 哑光锡 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 8 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 1Mb 128K x 8 | 20mA | 75MHz | 7 ns | FLASH | SPI | 8 | 3ms | 1b | 1 Mb | 0.00001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.72mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G02FVT-3AGE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 0.65mm | 未说明 | BR24G02 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 8 | 5ms | 2 kb | I2C | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR93L66FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e2 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 10 | 8 | 不合格 | 5V | Serial | 4Kb 256 x 16 | SYNCHRONOUS | 2MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 5ms | 4 kb | 0.000002A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 40 | SOFTWARE | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT25QF641-SUB-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 1 | 1.8V | 1.27mm | S-PDSO-G8 | 1.95V | 1.65V | 64Mb 8M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O, QPI | 64MX1 | 1 | 150μs, 5ms | 67108864 bit | SERIAL | 2.2V | 2.16mm | 5.28mm | 5.28mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S32800D-6TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | 0°C~70°C TA | Tray | e3 | yes | Obsolete | 3 (168 Hours) | 86 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | 86 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 180mA | 166MHz | 5.4ns | DRAM | Parallel | 32b | 8MX32 | 32 | 13b | 256 Mb | 0.003A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43TR16256A-125KBL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 96-TFBGA | 96 | Volatile | 0°C~95°C TC | Tray | 活跃 | 3 (168 Hours) | 96 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 1.425V~1.575V | BOTTOM | 1 | 1.5V | 0.8mm | 1.5V | 1.575V | 1.425V | 4Gb 256M x 16 | 1 | 230mA | SYNCHRONOUS | 290mA | 800MHz | 20ns | DRAM | Parallel | 16b | 256MX16 | 16 | 15ns | 18b | 4 Gb | 1.2mm | 13mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT29LV256-15JI | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-LCC (J-Lead) | Non-Volatile | -40°C~85°C TC | Tube | 1998 | Obsolete | 2 (1 Year) | 3V~3.6V | AT29LV256 | 256Kb 32K x 8 | 150ns | FLASH | Parallel | 20ms | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M24256-WMW6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 锡铅 | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | M24256 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 256Kb 32K x 8 | SYNCHRONOUS | 1MHz | 500ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 0.000002A | 262144 bit | I2C | 100000 Write/Erase Cycles | 10ms | 40 | HARDWARE | 1010000R | 2.03mm | 5.3mm | 5.25mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT25640VP2I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | CAT25640 | 8 | 5V | SPI, Serial | 64Kb 8K x 8 | 3mA | 10MHz | 40 ns | EEPROM | SPI | 无卤素 | 5ms | 64 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE/SOFTWARE | 750μm | 2.1mm | 3.1mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | W632GU6KB12I | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 96-TFBGA | YES | Volatile | -40°C~95°C TC | Tray | 2003 | Discontinued | 3 (168 Hours) | 96 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.36 | 1.283V~1.45V | BOTTOM | 未说明 | 1 | 1.35V | 0.8mm | 未说明 | 96 | R-PBGA-B96 | 不合格 | 1.45V | 1.35V | 1.283V | 2Gb 128M x 16 | 1 | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 128MX16 | 3-STATE | 16 | 0.019A | 2147483648 bit | COMMON | 8192 | 8 | 8 | 1.2mm | 13mm | 9mm | ROHS3 Compliant |