N/A

-

FBGA

QDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

400 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

Industrial grade

SRAM

BGA-165

400 MHz

-40 to 100 °C

Tray

GS81302DT10E

SigmaQuad-II+ B4

Memory & Data Storage

165

144 Mbit

2

1.065 A

Pipelined

16 M x 9

22 Bit

144 Mbit

Industrial

SRAM

N/A

-

6 Weeks

Industrial grade

Tin

表面贴装

表面贴装

54-TSOP (0.400, 10.16mm Width)

54

Volatile

-40°C~85°C TA

Tray

活跃

3 (168 Hours)

54

EAR99

AUTO/SELF REFRESH

3V~3.6V

DUAL

1

3.3V

0.8mm

54

不合格

3.3V

3.6V

3V

128Mb 8M x 16

1

120mA

SYNCHRONOUS

166MHz

5.4ns

DRAM

Parallel

16b

8MX16

3-STATE

16

12b

128 Mb

0.002A

COMMON

4096

1248FP

1248

1.2mm

22.22mm

ROHS3 Compliant

N/A

-

7 Weeks

Tin

通孔

通孔

8-DIP (0.300, 7.62mm)

8

Non-Volatile

-40°C~125°C TA

Tube

2004

e3

yes

活跃

1 (Unlimited)

8

EAR99

4.5V~5.5V

DUAL

1

5V

2.54mm

93C76C

8

5V

5V

Serial

8Kb 1K x 8 512 x 16

3mA

3MHz

100 ns

EEPROM

SPI

512X16

16

2ms

8 kb

0.000005A

MICROWIRE

1000000 Write/Erase Cycles

2ms

200

HARDWARE/SOFTWARE

8

5.334mm

9.27mm

7.62mm

无

ROHS3 Compliant

无铅

N/A

-

6 Weeks

Automotive grade

表面贴装

63-VFBGA

YES

63

Non-Volatile

-40°C~105°C TA

Tray

2016

ML-1

Discontinued

3 (168 Hours)

63

8542.32.00.51

2.7V~3.6V

BOTTOM

未说明

1

3.3V

0.8mm

未说明

3.6V

2.7V

2Gb 256M x 8

ASYNCHRONOUS

FLASH

Parallel

256MX8

8

25ns

2147483648 bit

AEC-Q100

3V

1mm

11mm

9mm

ROHS3 Compliant

N/A

-

10 Weeks

表面贴装

8-SOIC (0.154, 3.90mm Width)

YES

Non-Volatile

-40°C~85°C TA

Tray

2016

SpiFlash®

活跃

3 (168 Hours)

8

1.65V~1.95V

DUAL

1

1.8V

1.27mm

R-PDSO-G8

不合格

1.95V

1.8V

1.65V

SPI, Serial

2Mb 256K x 8

SYNCHRONOUS

104MHz

FLASH

SPI

2MX1

1

800μs

0.0000075A

2097152 bit

1.8V

SPI

100000 Write/Erase Cycles

20

HARDWARE/SOFTWARE

1.75mm

4.85mm

3.9mm

ROHS3 Compliant

N/A

-

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

375 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaSIO DDR-II

Details

DDR-II

Industrial grade

SRAM

BGA-165

375 MHz

-40 to 100 °C

Tray

GS81302S36GE

SigmaSIO DDR-II

Memory & Data Storage

165

144 Mbit

2

1.115 A

Pipelined

4 M x 36

21 Bit

144 Mbit

Industrial

SRAM

N/A

-

200 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

SDR

SRAM

BGA-165

有

Tray

GS881Z32CD

NBT Pipeline/Flow Through

Memory & Data Storage

9 Mbit

160 mA, 190 mA

6.5 ns

256 k x 32

SRAM

N/A

-

6 Weeks

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

未说明

10 ns

70 °C

有

GS71108AGU-10

131072 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.21

BGA

YES

48

TFBGA,

e1

有

3A991.B.2.B

锡银铜

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

48

R-PBGA-B48

不合格

3.6 V

COMMERCIAL

3 V

ASYNCHRONOUS

128KX8

1.2 mm

8

1048576 bit

PARALLEL

标准SRAM

8 mm

6 mm

N/A

-

FBGA

SDR

2.5, 3.3 V

表面贴装

2.7, 3.6 V

72 Bit

1 MWords

Synchronous

2.3, 3 V

250 MHz

+ 125 C

3.6 V

- 55 C

14

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

NBT SRAM

Military grade

SRAM

BGA-209

153.8@Flow-Through/250@Pipelined MHz

-55 to 125 °C

GS8642Z72C

NBT Pipeline/Flow Through

Memory & Data Storage

209

72 Mbit

8

500 mA

6.5 ns

Flow-Through/Pipelined

1 M x 72

20 Bit

72 Mbit

Military

SRAM

N/A

-

FBGA

1.8000 V

1.7 V

Synchronous

8 Bit

1.9 V

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

SRAM

BGA-165

450 MHz

-40 to 100 °C

Tray

GS81302TT07E

SigmaDDR-II+ B2

Memory & Data Storage

165

144 Mbit

1.01 A

0.45

16 M x 8

144

SRAM

N/A

-

TQFP

SDR

2.5, 3.3 V

2.3, 3 V

Synchronous

512 kWords

18 Bit

2.7, 3.6 V

表面贴装

有

250 MHz

+ 85 C

3.6 V

- 40 C

72

2.3 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

Industrial grade

SRAM

TQFP-100

181.8@Flow-Through/250@Pipelined MHz

-40 to 85 °C

Tray

GS88018CGT

Pipeline/Flow Through

Memory & Data Storage

100

9 Mbit

2

165 mA, 200 mA

5.5 ns

Flow-Through/Pipelined

512 k x 18

19 Bit

9 Mbit

Industrial

SRAM

N/A

-

6 Weeks

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

-40 °C

未说明

12 ns

85 °C

有

GS71108AGU-12I

131072 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

YES

48

TFBGA,

e1

有

3A991.B.2.B

锡银铜

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

48

R-PBGA-B48

不合格

3.6 V

INDUSTRIAL

3 V

ASYNCHRONOUS

128KX8

1.2 mm

8

1048576 bit

PARALLEL

标准SRAM

8 mm

6 mm

N/A

-

6 Weeks

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

未说明

8 ns

70 °C

有

GS71108AGU-8

131072 words

3.3 V

TFBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

YES

48

TFBGA,

e1

有

3A991.B.2.B

锡银铜

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

48

R-PBGA-B48

不合格

3.6 V

COMMERCIAL

3 V

ASYNCHRONOUS

128KX8

1.2 mm

8

1048576 bit

PARALLEL

标准SRAM

8 mm

6 mm

N/A

-

FBGA

DDR

1.8000 V

1.7 V

Synchronous

4 MWords

36 Bit

1.9 V

表面贴装

有

350 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

SRAM

BGA-165

350 MHz

-40 to 100 °C

Tray

GS81302T37E

SigmaDDR-II+ B2

Memory & Data Storage

165

144 Mbit

1

905 mA

Pipelined

4 M x 36

21 Bit

144 Mbit

Industrial

SRAM

N/A

-

135

3 V

SMD/SMT

Parallel

GSI技术

GSI技术

N

SRAM

BGA-48

3.6 V

GS74116AX

Asynchronous

Memory & Data Storage

4 Mbit

105 mA

10 ns

256 k x 16

SRAM

N/A

-

10 Weeks

FBGA

QDR

1.8000 V

Synchronous

4 MWords

36 Bit

表面贴装

有

500 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

QDR-II

LBGA,

GRID ARRAY, LOW PROFILE

4000000

PLASTIC/EPOXY

-40 °C

未说明

0.45 ns

85 °C

无

GS81302DT38E-500I

1.8 V

LBGA

RECTANGULAR

不推荐

GSI TECHNOLOGY

5.06

BGA

Industrial grade

SRAM

BGA-165

YES

165

500 MHz

-40 to 100 °C

Tray

GS81302DT38E

无

3A991.B.2.B

SigmaQuad-II+

流水线结构

8542.32.00.41

Memory & Data Storage

CMOS

BOTTOM

BALL

未说明

1

1 mm

compliant

165

R-PBGA-B165

不合格

1.9 V

INDUSTRIAL

1.7 V

144 Mbit

2

SYNCHRONOUS

1.67 A

Pipelined

4 M x 36

1.5 mm

36

20 Bit

144 Mbit

150994944 bit

Industrial

PARALLEL

QDR SRAM

SRAM

17 mm

15 mm

N/A

-

20 Weeks

Industrial grade

Gold

表面贴装

表面贴装

8-TSSOP (0.173, 4.40mm Width)

8

Non-Volatile

-40°C~85°C TA

Tube

2008

e4

yes

活跃

1 (Unlimited)

8

1.8V~5.5V

DUAL

260

1

5V

0.65mm

8

5V

SPI, Serial

1Kb 128 x 8

2mA

20MHz

75 ns

EEPROM

SPI

8

5ms

1 kb

0.000002A

SPI

1000000 Write/Erase Cycles

5ms

100

HARDWARE/SOFTWARE

1.2mm

4.4mm

3mm

无

无SVHC

ROHS3 Compliant

无铅

N/A

-

13 Weeks

Tin

表面贴装

表面贴装

16-SOIC (0.295, 7.50mm Width)

16

Non-Volatile

-40°C~85°C TA

Tray

2013

FL-S

e3

活跃

3 (168 Hours)

16

ALSO CONFIGURABLE AS 128M X 1

8542.32.00.51

2.7V~3.6V

DUAL

1

3V

1.27mm

不合格

3V

3.6V

2.7V

SPI, Serial

128Mb 16M x 8

90mA

133MHz

8 ns

FLASH

SPI - Quad I/O

8

1b

128 Mb

0.0001A

Synchronous

1b

3V

SPI

100000 Write/Erase Cycles

500ms

20

HARDWARE/SOFTWARE

2

2.65mm

10.3mm

ROHS3 Compliant

N/A

-

13 Weeks

表面贴装

表面贴装

165-LBGA

165

Volatile

-40°C~85°C TA

Tray

2003

e1

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

1.7V~1.9V

BOTTOM

260

1

1.8V

1mm

30

CY7C15632

165

1.8V

1.9V

1.7V

72Mb 4M x 18

2

780mA

450MHz

450 ps

SRAM

Parallel

4MX18

3-STATE

18

20b

72 Mb

0.34A

SEPARATE

Synchronous

18b

1.7V

1.4mm

15mm

无

ROHS3 Compliant

无铅

N/A

-

13 Weeks

表面贴装

表面贴装

165-LBGA

165

Volatile

0°C~70°C TA

Tray

2014

e1

活跃

3 (168 Hours)

165

Tin/Silver/Copper (Sn/Ag/Cu)

流水线结构

1.7V~1.9V

BOTTOM

260

1

1.8V

40

CY7C1668

165

1.8V

144Mb 8M x 18

1

790mA

450MHz

450 ps

SRAM

Parallel

18

22b

144 Mb

Synchronous

18b

无

ROHS3 Compliant

N/A

-

8 Weeks

TQFP

SDR

1.8, 2.5 V

1.7, 2.3 V

Synchronous

512 kWords

18 Bit

2, 2.7 V

表面贴装

有

150 MHz

+ 70 C

2.7 V

0 C

66

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SyncBurst

Details

SDR

LQFP, QFP100,.63X.87

FLATPACK, LOW PROFILE

3

512000

PLASTIC/EPOXY

QFP100,.63X.87

未说明

7.5 ns

70 °C

有

GS880E18CGT-150V

150 MHz

1.8 V

LQFP

RECTANGULAR

活跃

GSI TECHNOLOGY

5.36

QFP

Commercial grade

SRAM

TQFP-100

YES

100

133.3@Flow-Through/150@Pipelined MHz

0 to 70 °C

Tray

GS880E18CGT

e3

有

3A991.B.2.B

DCD

纯哑光锡

FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY

8542.32.00.41

Memory & Data Storage

CMOS

QUAD

鸥翼

260

1

0.65 mm

compliant

100

R-PQFP-G100

不合格

2 V

1.8/2.5 V

COMMERCIAL

1.7 V

9 Mbit

2

SYNCHRONOUS

105 mA, 115 mA

7.5 ns

Flow-Through/Pipelined

512 k x 18

3-STATE

1.6 mm

18

18 Bit

9 Mbit

0.025 A

9437184 bit

Commercial

PARALLEL

COMMON

缓存SRAM

1.7 V

SRAM

20 mm

14 mm

N/A

-

FBGA

DDR

1.8000 V

Synchronous

8 MWords

18 Bit

表面贴装

有

450 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

N

DDR-II

Commercial grade

SRAM

BGA-165

450 MHz

0 to 85 °C

Tray

GS81302TT19E

SigmaDDR-II+ B2

Memory & Data Storage

165

144 Mbit

1

1 A

Pipelined

8 M x 18

144 Mbit

Commercial

SRAM

N/A

-

FBGA

DDR

1.8000 V

1.7 V

Synchronous

16 MWords

9 Bit

1.9 V

表面贴装

有

450 MHz

+ 85 C

1.9 V

- 40 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaDDR-II+

DDR-II

Industrial grade

SRAM

BGA-165

450 MHz

-40 to 100 °C

Tray

GS81302TT10E

SigmaDDR-II+ B2

Memory & Data Storage

165

144 Mbit

1

1.01 A

Pipelined

16 M x 9

23 Bit

144 Mbit

Industrial

SRAM

N/A

-

6 Weeks

3.3000 V

3 V

Asynchronous

128 kWords

8 Bit

3.6 V

表面贴装

TFBGA,

GRID ARRAY, THIN PROFILE, FINE PITCH

3

128000

PLASTIC/EPOXY

-40 °C

未说明

7 ns

85 °C

有

GS71108AGU-7I

3.3 V

TFBGA

RECTANGULAR

GSI技术

活跃

GSI TECHNOLOGY

5.22

BGA

Industrial grade

YES

48

FBGA

-40 to 85 °C

e1

有

3A991.B.2.B

锡银铜

8542.32.00.41

CMOS

BOTTOM

BALL

260

1

0.75 mm

compliant

48

R-PBGA-B48

不合格

3.6 V

INDUSTRIAL

3 V

1

ASYNCHRONOUS

128KX8

1.2 mm

8

17 Bit

1 Mbit

1048576 bit

Industrial

PARALLEL

标准SRAM

8 mm

6 mm

N/A

-

QDR

1.8000 V

1.7 V

Synchronous

8 MWords

18 Bit

1.9 V

表面贴装

有

400 MHz

+ 70 C

1.9 V

0 C

10

1.7 V

SMD/SMT

Parallel

GSI技术

GSI技术

SigmaQuad-II+

N

QDR-II

Commercial grade

SRAM

BGA-165

400 MHz

0 to 85 °C

Tray

GS81302D20E

SigmaQuad-II+

Memory & Data Storage

144 Mbit

2

1.175 A

Pipelined

8 M x 18

21 Bit

144 Mbit

Commercial

SRAM