类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | AT45DB161D-SU | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tube | 1997 | e3 | Obsolete | 3 (168 Hours) | 8 | SMD/SMT | EAR99 | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 8 | 3.6V | 2.7V | SPI, Serial | 16Mb 528Bytes x 4096 pages | 15mA | 66MHz | 6 ns | FLASH | SPI | 8b | 16MX1 | 6ms | 21b | 16 Mb | Synchronous | 2.7V | 512B | 1.7mm | 5.38mm | 5.41mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | 25AA020AT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 25AA020A | 8 | 5V | SPI, Serial | 2Kb 256 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 2 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | BR25H080FVT-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | Automotive grade | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 8Kb 1K x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16100H-7TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 50-TSOP (0.400, 10.16mm Width) | YES | 50 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | yes | 活跃 | 3 (168 Hours) | 50 | Tin (Sn) | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 10 | 3.6V | 3V | 16Mb 1M x 16 | 1 | SYNCHRONOUS | 143MHz | 5.5ns | DRAM | Parallel | 1MX16 | 16 | 16777216 bit | 1.2mm | 20.95mm | 10.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF3202B-70-4I-B3KE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2000 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 0.8mm | SST39VF3202 | 3.3V | 32Mb 2M x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 2MX16 | 16 | 10μs | 21b | 32 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 1K | 2K | TOP | YES | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25PF040C-40V/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~105°C TA | Tube | SST25 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.3V~3.6V | DUAL | 1 | 3.3V | 1.27mm | SST25PF040C | R-PDSO-N8 | 3.6V | 2.3V | 4Mb 512K x 8 | SYNCHRONOUS | 40MHz | 0.015mA | FLASH | SPI | 4MX1 | 1 | 5ms | 0.00001A | 4194304 bit | SERIAL | 3.3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | NO | 0.8mm | 6mm | 5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL132K0XBHI030 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 24-TBGA | YES | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | FL1-K | e1 | Obsolete | 3 (168 Hours) | 24 | 锡银铜 | ALSO CONFIGURABLE AS 32M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 32Mb 4M x 8 | 108MHz | 0.025mA | FLASH | SPI - Quad I/O | 8MX4 | 4 | 3ms | 32 Mb | 0.000005A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 1.2mm | 8mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C008-15AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 1997 | e3 | Obsolete | 3 (168 Hours) | 100 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.5mm | 15GHz | 20 | CY7C008 | 100 | 3.3V | 5.5V | 5V | 4.5V | 512Kb 64K x 8 | 2 | 185mA | SRAM | Parallel | 64KX8 | 3-STATE | 8 | 15ns | 32b | 512 kb | 0.0015A | 15 ns | COMMON | Asynchronous | 8b | 4.5V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1351G-133AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e4 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 流线型结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1351 | 100 | 3.3V | 3.6V | 3.135V | 4.5Mb 128K x 36 | 4 | 225mA | 133MHz | 6.5ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4 Mb | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
 | AS7C256A-12TCNTR | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | YES | 28 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2001 | yes | 活跃 | 3 (168 Hours) | 28 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.55mm | 未说明 | 28 | 5V | 256Kb 32K x 8 | SRAM | Parallel | 32KX8 | 8 | 12ns | 256 kb | 12 ns | 1.2mm | 11.8mm | 8mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | R1EX25064ASA00I#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 1 | 3.6V | 1.27mm | R1EX25064 | 8 | 5.5V | 2.5V | SPI, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 5MHz | EEPROM | SPI | 8 | 5ms | 65536 bit | SPI | 5ms | 1.73mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256-20DM/883-815 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 28-CDIP (0.600, 15.24mm) | NO | Non-Volatile | -55°C~125°C TC | Tube | 1997 | 活跃 | 1 (Unlimited) | 28 | 自动写入 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | R-GDIP-T28 | 5.5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 262144 bit | MIL-STD-883 Class B | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W9825G2JB-6 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 90-TFBGA | 90 | Volatile | 0°C~70°C TA | Tray | 2011 | 活跃 | 3 (168 Hours) | 90 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | 3V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | 90 | 不合格 | 3.3V | 3.6V | 3V | 256Mb 8M x 32 | 1 | 150mA | SYNCHRONOUS | 166MHz | 5ns | DRAM | Parallel | 8MX32 | 32 | 12b | 256 Mb | 0.004A | COMMON | 4096 | 1248FP | 1248 | 1.2mm | 13mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGMFA000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 16 | Non-Volatile | -40°C~85°C TA | Tray | 2016 | FL-S | e3 | yes | 活跃 | 3 (168 Hours) | 16 | Matte Tin (Sn) | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 3.6V | 2.7V | SPI, Serial | 128Mb 16M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 32MX4 | 4 | 134217728 bit | AEC-Q100 | 3V | 500ms | 2 | 2.65mm | 10.3mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B104NA-ZS45XIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B104 | 44 | 不合格 | 3V | 3.6V | 2.7V | 4Mb 256K x 16 | 52mA | ASYNCHRONOUS | NVSRAM | Parallel | 16b | 256KX16 | 16 | 45ns | 4 Mb | 0.005A | 45 ns | 16b | 1.194mm | 18.415mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV5128BLL-55T2I | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-SOIC (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tray | e0 | no | Obsolete | 2 (1 Year) | 32 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | 2.5V~3.6V | DUAL | 未说明 | 1 | 2.8V | 1.27mm | 未说明 | 32 | R-PDSO-G32 | 不合格 | 3.6V | 3/3.3V | 2.5V | 4Mb 512K x 8 | SRAM | Parallel | 512KX8 | 3-STATE | 8 | 55ns | 0.000015A | 4194304 bit | 55 ns | COMMON | 1.2V | 1.2mm | 20.95mm | 10.16mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G08NUX-3TTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Tin | 表面贴装 | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 8 | 1.6V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | BR24G08 | R-PDSO-N8 | 不合格 | 5.5V | 1.8/5V | 1.6V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8KX1 | 1 | 5ms | 8 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DMMR | 0.6mm | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC76A-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC76A | 8 | 不合格 | 5V | Serial | 8Kb 1K x 8 | 3mA | SYNCHRONOUS | 3MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA64T-E/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2010 | e4 | 活跃 | 1 (Unlimited) | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | 260 | 40 | 24AA64 | I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 5ms | 64 kb | I2C | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16160G-6BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 54-TFBGA | 54 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | 54 | 不合格 | 3.3V | 3.6V | 3V | 256Mb 16M x 16 | 1 | 160mA | SYNCHRONOUS | 166MHz | 5.4ns | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15b | 256 Mb | 0.004A | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2265KV18-550BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | 活跃 | 3 (168 Hours) | 165 | 3A991.B.2.A | 流水线结构 | 8542.32.00.41 | 1.7V~1.9V | BOTTOM | 1 | 1.8V | 1mm | CY7C2265 | 1.9V | 1.7V | 36Mb 1M x 36 | 550MHz | SRAM | Parallel | 1MX36 | 36 | 37748736 bit | 0.45 ns | 1.4mm | 15mm | 13mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST39VF3202B-70-4C-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST39VF3202 | 48 | 3.3V | 3.6V | 2.7V | 32Mb 2M x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 2MX16 | 16 | 10μs | 21b | 32 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 2K | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
 | SST39LF040-55-4C-NHE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | 32 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | yes | 活跃 | 3 (168 Hours) | 32 | 3V~3.6V | QUAD | 1 | 3.3V | 1.27mm | SST39LF040 | 3.6V | 3V | 4Mb 512K x 8 | 20mA | 55ns | FLASH | Parallel | 8b | 512KX8 | 8 | 20μs | 19b | 4 Mb | 3V | 3.556mm | 13.97mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C027-20AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 1997 | e4 | yes | Obsolete | 3 (168 Hours) | 100 | Nickel/Palladium/Gold (Ni/Pd/Au) | FLOW-THROUGH | 4.5V~5.5V | QUAD | 260 | 1 | 5V | 0.5mm | 20GHz | 20 | CY7C027 | 100 | 5V | 5V | 512Kb 32K x 16 | 2 | 265mA | SRAM | Parallel | 3-STATE | 20ns | 30b | 512 kb | 0.0015A | COMMON | Asynchronous | 16b | 2V | 1.4mm | 14mm | 14mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C10612G30-10ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 1996 | 活跃 | 3 (168 Hours) | 54 | 3A991.B.2.A | 8542.32.00.41 | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | R-PDSO-G54 | 3.6V | 3V | 16Mb 1M x 16 | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | 1.2mm | 22.415mm | 10.16mm | ROHS3 Compliant |