类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 访问模式 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | BR24C21FJ-E2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 1 | 4V | 1.27mm | BR24C21 | 8 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 1Kb 128 x 8 | 400kHz | EEPROM | I2C | 8 | 10ms | 1 kb | 0.0001A | I2C | 100000 Write/Erase Cycles | 10ms | 10 | 1010XXXR | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62157EV30LL-55ZSXE | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~125°C TA | Tray | 2001 | MoBL® | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY62157 | 44 | 3V | 3.6V | 2.2V | 8Mb 512K x 16 | 1 | 35mA | SRAM | Parallel | 3-STATE | 55ns | 19b | 8 Mb | 0.00003A | 22MHz | 55 ns | COMMON | Asynchronous | 16b | 1.04mm | 18.52mm | 10.26mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 93C46CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C46C | 8 | 5V | 5V | Serial | 1Kb 128 x 8 64 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 64X16 | 16 | 2ms | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | SST39LF802C-55-4C-EKE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e3 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Matte Tin (Sn) - annealed | TOP BOOT BLOCK | 8542.32.00.51 | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.5mm | 40 | SST39LF802 | 48 | 3.3V | 3.6V | 3V | 8Mb 512K x 16 | 18mA | 55ns | FLASH | Parallel | 16b | 512KX16 | 16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 2K | YES | TOP | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||
| AT49BV322DT-70TU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | Non-Volatile | -40°C~85°C TC | Tray | 1997 | Obsolete | 3 (168 Hours) | 2.65V~3.6V | AT49BV322 | 32Mb 2M x 16 | 70ns | FLASH | Parallel | 120μs | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62157DV30LL-55ZSXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tray | 2004 | MoBL® | e4 | Obsolete | 2 (1 Year) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | unknown | 20 | CY62157 | 44 | 不合格 | 3V | 3.6V | 2.2V | 8Mb 512K x 16 | 1 | 15mA | SRAM | Parallel | 3-STATE | 16 | 55ns | 19b | 8 Mb | 0.000004A | 55 ns | COMMON | Asynchronous | 16b | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C64-FCU6TP/TF | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 4-XFBGA, WLCSP | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 4 | IT ALSO OPERATES AT 0 TO 85 TEMP AT WRITE OPERATION | 1.7V~5.5V | BOTTOM | 未说明 | 1 | 0.4mm | 未说明 | M24C64 | R-PBGA-B4 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 64Kb 8K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8KX8 | 8 | 5ms | 65536 bit | I2C | 5ms | 0.345mm | 0.795mm | 0.674mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61WV6416DBLL-10TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 44 | 2.4V~3.6V | DUAL | 1 | 3V | 0.8mm | 44 | 3.6V | 2.5/3.3V | 2.4V | 1Mb 64K x 16 | 1 | 55mA | SRAM | Parallel | 3-STATE | 10ns | 16b | 1 Mb | 0.000055A | COMMON | Asynchronous | 16b | 2V | 1.05mm | 18.54mm | 10.29mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C16C-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | ALSO OPERATES 1.7V AT 400 KHZ | 8542.32.00.51 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | AT24C16C | R-PDSO-N8 | 5.5V | 1.7V | 16Kb 2K x 8 | SYNCHRONOUS | 1MHz | 550ns | EEPROM | I2C | 2KX8 | 8 | 5ms | 16384 bit | SERIAL | I2C | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF400A-70-4C-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.5mm | 40 | SST39VF400A | 48 | 3.3V | 3.6V | 2.7V | 4Mb 256K x 16 | 30mA | 70ns | FLASH | Parallel | 16b | 256KX16 | 16 | 20μs | 18b | 4 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 2K | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | S29GL032N90FFI030 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2003 | GL-N | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 16b | 2MX16 | 16 | 90ns | 32 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 863 | 8/16words | YES | TOP | YES | 1.4mm | 13mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | FM25VN10-GTR | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | F-RAM™ | e4 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 30 | FM25VN10 | 8 | 不合格 | 3.6V | 2.5/3.3V | 2V | SPI, Serial | 1Mb 128K x 8 | 3mA | SYNCHRONOUS | 40MHz | 18 ns | FRAM | SPI | 8b | 8 | 1 Mb | 0.00015A | 8b | 1.75mm | 4.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43LD32320C-25BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 134-TFBGA | YES | Volatile | -40°C~85°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 134 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM | 1.14V~1.95V | BOTTOM | 未说明 | 1 | 1.2V | 0.65mm | 未说明 | R-PBGA-B134 | 1.3V | 1.14V | 1Gb 32M x 32 | 1 | SYNCHRONOUS | 400MHz | DRAM | Parallel | 32MX32 | 32 | 15ns | 1073741824 bit | 多库页面突发 | 1.1mm | 11.5mm | 10mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C08-DRMF3TG/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-WFDFN Exposed Pad | YES | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.5mm | 未说明 | M24C08 | R-PDSO-N8 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 1KX8 | 8 | 4ms | 8192 bit | I2C | 4ms | 0.8mm | 3mm | 2mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV25616EBLL-45BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 10 | R-PBGA-B48 | 3.6V | 2.2V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 45ns | 4194304 bit | 45 ns | 1.2mm | 8mm | 6mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB081E-SSHN-B | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Non-Volatile | -40°C~85°C TC | Tube | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 不合格 | 3.6V | 1.7V | SPI, Serial | 8Mb 264Bytes x 4096 pages | 15mA | 15mA | 85MHz | 7 ns | FLASH | SPI | 8b | 8μs, 4ms | 21b | 8 Mb | 0.000001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1.5mm | 5.05mm | 3.99mm | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
| AT93C46DY6-YH-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | 活跃 | 3 (168 Hours) | EAR99 | 8542.32.00.51 | 1.8V~5.5V | 1Kb 128 x 8 64 x 16 | 2MHz | EEPROM | SPI | 5ms | MICROWIRE | 1000000 Write/Erase Cycles | 100 | SOFTWARE | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1512KV18-300BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | yes | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | PIPELINED ARCHITECTURE; IT ALSO OPERATES AT 1.5V | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1512 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 4M x 18 | 2 | 750mA | 300MHz | 450 ps | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 21b | 72 Mb | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | SST26WF080B-104I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-WDFN Exposed Pad | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 260 | 1 | 1.8V | 1.27mm | 30 | SST26WF080 | 1.8V | 1.95V | 1.65V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 1 | 1.5ms | 8 Mb | TS 16949 | 256B | 6mm | 5mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF064C-80-4C-Q2AE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | SST25 | e3 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 哑光锡 | 2.7V~3.6V | 1 | 3V | 1.27mm | SST25VF064C | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | 12mA | 80MHz | 80 ns | FLASH | SPI - Dual I/O | 8b | 64MX1 | 1 | 2.5ms | 1b | 64 Mb | 0.00002A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 256B | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | MX29GL128FHXFI-90G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 64-LBGA, CSPBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | MX29GL | 活跃 | 3 (168 Hours) | 64 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | R-PBGA-B64 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | ASYNCHRONOUS | FLASH | Parallel | 8MX16 | 16 | 90ns | 0.00003A | 134217728 bit | 90 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 11mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62126EV30LL-45BVXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-VFBGA | 48 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1998 | MoBL® | e1 | yes | 活跃 | 3 (168 Hours) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.2V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 45GHz | 30 | CY62126 | 不合格 | 3V | 3.6V | 2.2V | 1Mb 64K x 16 | 1 | 16mA | SRAM | Parallel | 3-STATE | 16 | 45ns | 16b | 1 Mb | 0.000003A | 45 ns | COMMON | Asynchronous | 16b | 8mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC04BHT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Automotive grade | Gold | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2004 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 0.65mm | 40 | 24LC04BH | 8 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 4 kb | 0.000005A | ISO/TS-16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | YES | 16words | 1010XXMR | NO | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | MX25L2006EZNI-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2010 | MX25xxx05/06 | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 8 | R-PDSO-N8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 2Mb 256K x 8 | SYNCHRONOUS | 86MHz | FLASH | SPI | 1MX2 | 2 | 50μs, 3ms | 2 Mb | 0.00001A | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | MX25L8035EM2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | MX25xxx35/36 - MXSMIO™ | 不用于新设计 | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | unknown | 未说明 | 8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 8Mb 1M x 8 | SYNCHRONOUS | 108MHz | FLASH | SPI | 2MX4 | 4 | 300μs, 3ms | 0.00002A | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 2.16mm | 5.23mm | ROHS3 Compliant | 无铅 |