类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 制造商包装标识符 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 无卤素 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 访问模式 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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 | 47C04T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 512 X 8 BITS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 47C04 | R-PDSO-G8 | 5.5V | 4.5V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 512X8 | 8 | 1ms | 4096 bit | TS 16949 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CYDMX128B16-65BVXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-VFBGA | 100 | Volatile | -40°C~85°C TA | Tray | 2011 | e1 | Obsolete | 3 (168 Hours) | 100 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 1.8V~3.3V | BOTTOM | 260 | 1 | 1.8V | 0.5mm | 40 | CYDMX | 100 | 3V | 1.9V | 1.7V | 128Kb 8K x 16 | 70mA | 2 | 70mA | SRAM | Parallel | 8KX16 | 3-STATE | 16 | 65ns | 13b | 128 kb | 0.000006A | 65 ns | COMMON | Asynchronous | 16b | 1mm | 6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM1808B-SG | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | F-RAM™ | e3 | 活跃 | 3 (168 Hours) | 28 | EAR99 | Tin (Sn) | 8542.32.00.71 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | FM1808B | 28 | 5V | 5V | 256Kb 32K x 8 | 15mA | 70 ns | FRAM | Parallel | 8b | 32KX8 | 8 | 130ns | 256 kb | 0.00005A | 8b | 2.65mm | 17.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61NLF12836A-7.5TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 100-LQFP | YES | 100 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 2 (1 Year) | 100 | 3A991.B.2.A | Matte Tin (Sn) - annealed | FLOW-THROUGH ARCHITECTURE | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 10 | 100 | 3.3V | 3.135V | 4.5Mb 128K x 36 | 4 | 160mA | 117MHz | 7.5ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4 Mb | 0.035A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W25P16VSSIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2006 | SpiFlash® | e3 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 哑光锡 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 8 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 16Mb 2M x 8 | 50MHz | 50 μs | FLASH | SPI | 16MX1 | 1 | 7ms | 1b | 16 Mb | 0.000005A | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2.16mm | 5.27mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | MT47H64M16HR-25:E | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, THIN PROFILE, FINE PITCH | 64000000 | PLASTIC/EPOXY | BGA84,9X15,32 | -40 °C | 30 | 0.4 ns | 85 °C | 有 | MT47H64M16HR-25:E | 400 MHz | 67108864 words | 1.8 V | TFBGA | RECTANGULAR | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 8.36 | BGA | YES | 84 | TFBGA, BGA84,9X15,32 | e1 | 锡银铜 | AUTO/SELF REFRESH | DRAMs | CMOS | BOTTOM | BALL | 260 | 1 | 0.8 mm | unknown | 84 | R-PBGA-B84 | 不合格 | 1.9 V | 1.8 V | INDUSTRIAL | 1.7 V | 1 | SYNCHRONOUS | 0.44 mA | 64MX16 | 3-STATE | 1.2 mm | 16 | 0.007 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | 多库页面突发 | 12.5 mm | 8 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC66BT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC66B | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 256 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF1602C-70-4I-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 48-WFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | SST39 MPF™ | e1 | yes | 活跃 | 1 (Unlimited) | 48 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT BLOCK | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.5mm | 40 | SST39VF1602C | 48 | 不合格 | 3.3V | 3.6V | 2.7V | 16Mb 1M x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 10μs | 20b | 16 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 12131 | 8K4K16K32K | YES | TOP | YES | 0.73mm | 6mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT21CS01-STUM14-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | Matte Tin (Sn) - annealed | 1.7V~3.6V | DUAL | 260 | 1 | 1.8V | 40 | AT21CS01 | R-PDSO-G3 | 3.6V | 1.7V | 1Kb 128 x 8 | SYNCHRONOUS | 125kHz | EEPROM | I2C, Single Wire | 128X8 | 8 | 5ms | 1024 bit | SERIAL | 1-WIRE | 5ms | 1.12mm | 2.9mm | 1.3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021CV33-12ZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | 0°C~70°C TA | Tray | 1996 | e4 | Obsolete | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | unknown | 12GHz | 20 | CY7C1021 | 44 | 不合格 | 3.3V | 3.63V | 2.97V | 1Mb 64K x 16 | 1 | 85mA | SRAM | Parallel | 3-STATE | 16 | 12ns | 16b | 1 Mb | 0.005A | COMMON | Asynchronous | 16b | 3V | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CAT93C46VP2I-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Industrial grade | LAST SHIPMENTS (Last Updated: 2 days ago) | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | 100 YEAR DATA RETENTION | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | CAT93C46 | 8 | 不合格 | 5V | Serial | 1Kb 128 x 8 64 x 16 | 1mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 无卤素 | 1 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 1ms | 100 | SOFTWARE | 750μm | 3.1mm | 2.1mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA04T-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 260 | 1 | 0.5mm | 40 | 24AA04 | 8 | 5V | 1.7V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 4 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXMR | NO | 3mm | 2mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25V01A-G | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2002 | F-RAM™ | 活跃 | 3 (168 Hours) | 8 | EAR99 | 8542.32.00.71 | 2V~3.6V | DUAL | 未说明 | 1 | 3.3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 2V | SPI, Serial | 128Kb 16K x 8 | SYNCHRONOUS | 40MHz | FRAM | SPI | 16KX8 | 8 | 131072 bit | 1.727mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1472V25-200AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | e3 | yes | 活跃 | 3 (168 Hours) | 100 | Matte Tin (Sn) | 流水线结构 | 2.375V~2.625V | QUAD | 260 | 1 | 2.5V | 0.65mm | 20 | CY7C1472 | 100 | 2.5V | 72Mb 4M x 18 | 2 | 450mA | 200MHz | 3ns | SRAM | Parallel | 4MX18 | 3-STATE | 18 | 22b | 72 Mb | COMMON | Synchronous | 18b | 1.6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR9020RFV-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 8-LSSOP (0.173, 4.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2004 | e2 | 活跃 | 1 (Unlimited) | 8 | Tin/Copper (Sn/Cu) | 2V~5.5V | DUAL | 1 | 5V | 0.65mm | BR9020 | R-PDSO-G8 | 不合格 | 5.5V | 3/5V | 2.7V | Serial | 2Kb 128 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 128X16 | 16 | 10ms | 0.000002A | 2048 bit | 100000 Write/Erase Cycles | 10 | HARDWARE/SOFTWARE | 1.25mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LE25S80MB-AH | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | SMD/SMT | NOR | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 40MHz | SPI | 1.95V | 1.65V | 1MB | 8mA | 8b | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C010E-15JU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 22 Weeks | 表面贴装 | 32-LCC (J-Lead) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 32 | 4.5V~5.5V | QUAD | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PQCC-J32 | 5.5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 128KX8 | 8 | 10ms | 1048576 bit | 5V | 10ms | 3.556mm | 13.97mm | 11.43mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M95256-DRDW6TP | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 1 | 5V | 0.65mm | M95256 | 8 | 5.5V | 5V | SPI, Serial | 256Kb 32K x 8 | 20MHz | 150 ns | EEPROM | SPI | 8 | 5ms | 256 kb | 0.000003A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1061G30-10ZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 2012 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.B | 8542.32.00.41 | 2.2V~3.6V | DUAL | 1 | 3V | 0.5mm | CY7C1061 | R-PDSO-G48 | 3.6V | 2.2V | 16Mb 1M x 16 | SRAM | Parallel | 1MX16 | 16 | 10ns | 16777216 bit | 10 ns | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| W25Q64FVZPIG | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2011 | SpiFlash® | Obsolete | 3 (168 Hours) | 8 | 2.7V~3.6V | DUAL | 1 | 1.27mm | 3V | 3.6V | 3V | SPI | 64Mb 8M x 8 | 40mA | 104MHz | 7 ns | FLASH | SPI - Quad I/O, QPI | 3-STATE | 8 | 50μs, 3ms | 1b | 64 Mb | 0.00005A | SERIAL | Synchronous | 8b | SPI | 20 | HARDWARE/SOFTWARE | 1 | 256B | 85°C | 800μm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S29AL008J70TFM020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~125°C TA | Tray | 2012 | AL-J | yes | Obsolete | 3 (168 Hours) | 48 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | R-PDSO-G48 | 3.6V | 2.7V | 8Mb 1M x 8 512K x 16 | ASYNCHRONOUS | FLASH | Parallel | 512KX16 | 16 | 70ns | 8388608 bit | AEC-Q100 | 70 ns | 3V | 8 | 1.2mm | 18.4mm | 12mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M95160-DFMN6TP | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~5.5V | DUAL | 1 | 1.8V | 1.27mm | M95160 | 5.5V | 1.7V | SPI, Serial | 16Kb 2K x 8 | 20MHz | 80 ns | EEPROM | SPI | 5ms | 16 kb | SPI | 5ms | 1.5mm | 5mm | 4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M24128-BWMN6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | 锡铅 | 2.5V~5.5V | DUAL | 1 | 5V | 1.27mm | M24128 | 8 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | 1MHz | 450ns | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB041E-SHN-B | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | 8S2 | Non-Volatile | -40°C~85°C TC | Tube | 2012 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | ALSO OPERATES MIN 1.65 V AT 70 MHZ | 1.65V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 不合格 | 1.8V | 3.6V | 2.3V | SPI, Serial | 4Mb 264Bytes x 2048 pages | 15mA | 15mA | 85MHz | 7 ns | FLASH | SPI | 8b | 4MX1 | 8μs, 3ms | 19b | 4 Mb | 0.000001A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.91mm | 5.4mm | 5.35mm | Unknown | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS21ES08G-JCLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 153-VFBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 153 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.5mm | 未说明 | R-PBGA-B153 | 3.6V | 2.7V | 64Gb 8G x 8 | SYNCHRONOUS | 200MHz | FLASH | eMMC | 8GX8 | 8 | 68719476736 bit | PARALLEL | 3.3V | 1mm | 13mm | 11.5mm | ROHS3 Compliant |