类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 逻辑功能 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 时间格式 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||
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 | MX25L1606EZNI-12G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2013 | MX25xxx05/06 | e3 | 不用于新设计 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | 8 | R-PDSO-N8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 86MHz | FLASH | SPI | 8MX2 | 2 | 50μs, 3ms | 16 Mb | 0.00002A | 2.7V | SPI | 100000 Write/Erase Cycles | HARDWARE/SOFTWARE | 1 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM28V100-TG | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 32-TFSOP (0.465, 11.80mm Width) | 32 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | F-RAM™ | e3 | 活跃 | 3 (168 Hours) | 32 | EAR99 | PURE TIN | 2V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | FM28V100 | 32 | 3.3V | 3.6V | 2.7V | 1Mb 128K x 8 | 12mA | FRAM | Parallel | 8b | 128KX8 | 90ns | 1 Mb | 0.00015A | 105 ns | 8b | 1.2mm | 8mm | 11.8mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT45DB321E-SHF2B-T | Adesto Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.3V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 未说明 | 8 | 3.6V | 2.3V | SPI, Serial | 32Mb 512Bytes x 8192 pages | 22mA | 22mA | 85MHz | 7 ns | FLASH | SPI | 8b | 32MX1 | 1 | 8μs, 4ms | 22b | 32 Mb | Synchronous | 8b | 3V | 512B | 2.16mm | 5.29mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25C320T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000K ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25C320 | 8 | 5V | 5V | SPI, Serial | 32Kb 4K x 8 | 5mA | 3MHz | 150 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24FC512-I/ST14 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 14-TSSOP (0.173, 4.40mm Width) | 14 | Non-Volatile | -40°C~85°C TA | Tube | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 14 | EAR99 | 8542.32.00.51 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 40 | 24FC512 | 14 | 5.5V | 2/5V | 1.7V | I2C, Serial | 512Kb 64K x 8 | 5mA | 1MHz | 400ns | EEPROM | I2C | 64KX8 | 5ms | 512 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 900μm | 5mm | 4.4mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC080T-I/TT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 11LC080 | 3 | 5V | Serial | 8Kb 1K x 8 | 5mA | 100kHz | EEPROM | 单线 | 1KX8 | 5ms | 8 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.02mm | 3.05mm | 1.4mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC08BT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 24LC08B | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC56CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93LC56C | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1051DV33-12ZSXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 0.8mm | 30 | CY7C1051 | 3.3V | 3.6V | 3V | 8Mb 512K x 16 | 1 | 100mA | SRAM | Parallel | 3-STATE | 16 | 12ns | 19b | 8 Mb | 0.02A | COMMON | Asynchronous | 16b | 2V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FM25640B-G | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Non-Volatile | -40°C~85°C TA | Tube | 2004 | F-RAM™ | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | FM25640 | 8 | 不合格 | 5V | 5V | SPI, Serial | 64Kb 8K x 8 | 4mA | SYNCHRONOUS | 20MHz | 20 ns | FRAM | SPI | 8b | 64 kb | 0.00001A | 8b | 1.5mm | 4.9mm | 3.9mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | K4B2G1646F-BYMA | Samsung | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C46BT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1000000 ERASE/WRITE CYCLES; DATA RETENTION > 200 YEARS | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 93C46B | 8 | 5V | 5V | Serial | 1Kb 64 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 16 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC080/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 4KV ESD PROTECTION; 1M ENDURANCE CYCLES | 2.5V~5.5V | DUAL | 1 | 3.3V | 2.54mm | 25LC080 | 8 | 2.5V | 5.5V | 3/5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 2MHz | 230 ns | EEPROM | SPI | 5ms | 8 kb | 0.000001A | SPI | 10000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3.3mm | 9.27mm | 6.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX29GL128ELT2I-90G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2004 | MX29GL | e3 | yes | 不用于新设计 | 3 (168 Hours) | 56 | 3A991.B.1.A | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 56 | R-PDSO-G56 | 不合格 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX16 | 16 | 90ns | 128 Mb | 0.0001A | 90 ns | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY7C1069AV33-10ZC | Cypress Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE | 3 | 2000000 | PLASTIC/EPOXY | TSOP54,.46,32 | 未说明 | 10 ns | 70 °C | 无 | CY7C1069AV33-10ZC | 2097152 words | 3.3 V | TSOP2 | RECTANGULAR | 赛普拉斯半导体 | Obsolete | CYPRESS SEMICONDUCTOR CORP | 8.73 | TSOP2 | YES | 54 | TSOP2-54 | e0 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 8542.32.00.41 | SRAMs | CMOS | DUAL | 鸥翼 | 235 | 1 | 0.8 mm | not_compliant | 54 | R-PDSO-G54 | 不合格 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.275 mA | 2MX8 | 3-STATE | 1.2 mm | 8 | 0.05 A | 16777216 bit | PARALLEL | COMMON | 标准SRAM | 3 V | 22.415 mm | 10.16 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF1602-70-4I-EKE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2000 | SST39 MPF™ | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 0.5mm | SST39VF1602 | 3.3V | 16Mb 1M x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 10μs | 20b | 16 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 512 | 2K | TOP | YES | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CY14B108K-ZS25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2005 | e3 | yes | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | Matte Tin (Sn) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B108 | 44 | 3V | 3.6V | 2.7V | 8Mb 1M x 8 | 75mA | Clock | NVSRAM | Parallel | 8b | 1MX8 | 8 | 25ns | 8 Mb | 0.01A | 25 ns | 8b | HH:MM:SS | 1.194mm | 18.415mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43DR16640C-25DBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 84-TFBGA | 84 | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 84 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 0.8mm | 10 | 不合格 | 1.8V | 1.9V | 1.7V | 1Gb 64M x 16 | 1 | SYNCHRONOUS | 400ps | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 13b | 1 Gb | 0.025A | 400MHz | COMMON | 8192 | 48 | 48 | 1.2mm | 12.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AT24C04B-PU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | Non-Volatile | -40°C~85°C TA | Tube | 1997 | Obsolete | 1 (Unlimited) | 85°C | -40°C | 1.8V~5.5V | 400kHz | AT24C04 | 5V | 2-Wire, I2C, Serial | 5.5V | 1.8V | 4Kb 512 x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 5ms | 4 kb | 400kHz | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA00T-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA00 | 8 | 5.5V | 2/5V | 1.7V | 2-Wire, I2C, Serial | 128b 16 x 8 | 2mA | 400kHz | 3500ns | EEPROM | I2C | 8 | 4ms | 128 b | 0.000001A | I2C | 1000000 Write/Erase Cycles | 4ms | 200 | 1010XXXR | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA00/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | 0°C~70°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 1.8V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 24AA00 | 8 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 128b 16 x 8 | 3mA | 400kHz | 3500ns | EEPROM | I2C | 8 | 4ms | 128 b | 0.000001A | I2C | 1000000 Write/Erase Cycles | 4ms | 200 | 1010XXXR | 4.32mm | 9.46mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AS6C62256-55PCN | Alliance Memory, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 通孔 | 通孔 | 28-DIP (0.600, 15.24mm) | 28 | Volatile | 0°C~70°C TA | Tube | 2005 | e3/e6 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | MATTE TIN/TIN BISMUTH | 8542.32.00.32 | 2.7V~5.5V | DUAL | 1 | 3.3V | 2.54mm | 28 | 3.3V | 5.5V | 3/5V | 2.7V | 256Kb 32K x 8 | 1 | SRAM | Parallel | 32KX8 | 3-STATE | 55ns | 15b | 256 kb | 0.00002A | 55 ns | COMMON | 2V | YES | 3.81mm | 36.32mm | 13.21mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC66CXT-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC66C | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF801C-70-4C-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2011 | SST39 MPF™ | e1 | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 5MHz | 40 | SST39VF801C | 48 | 3.3V | 3.6V | 2.7V | 8Mb 512K x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 10μs | 19b | 8 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 256 | 2K | YES | BOTTOM | YES | 750μm | 8mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST25WF010-40-5I-SAF-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | SST25 | Obsolete | 3 (168 Hours) | 1.65V~1.95V | unknown | SST25WF010-40 | 1.8V | SPI, Serial | 1Mb 128K x 8 | 10mA | 40MHz | 9 ns | FLASH | SPI | 8b | 60μs | 1b | 1 Mb | Synchronous | 8b | ROHS3 Compliant |