类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | I2C控制字节 | 反向引脚排列 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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 | AT28C256E-20UM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | Lead, Tin | 通孔 | 通孔 | 28-BCPGA | 28 | Non-Volatile | -55°C~125°C TC | Tray | 1997 | e0 | no | 活跃 | 1 (Unlimited) | 28 | Tin/Lead (Sn/Pb) | 自动写入 | 4.5V~5.5V | PERPENDICULAR | 225 | 1 | 5V | 2.54mm | 200GHz | 30 | AT28C256 | 不合格 | 5V | 5V | Parallel, SPI | 256Kb 32K x 8 | 50mA | ASYNCHRONOUS | 200ns | EEPROM | Parallel | 32KX8 | 3-STATE | 8 | 10ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 100000 Write/Erase Cycles | 10ms | YES | YES | 64words | 4.4mm | 16.51mm | 13.97mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC08B-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC08B | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 23A1024-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Volatile | -40°C~125°C TA | Tube | 2012 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.7V~2.2V | DUAL | 260 | 1 | 1.27mm | 40 | 23A1024 | R-PDSO-G8 | 不合格 | 2.2V | 1.8/2V | 1.7V | 1Mb 128K x 8 | SYNCHRONOUS | 16MHz | SRAM | SPI - Quad I/O | 128KX8 | 3-STATE | 8 | 0.000012A | 1048576 bit | 32 ns | SERIAL | COMMON/SEPARATE | 1.7V | NO | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS25LP032D-JNLE | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~105°C TA | Tube | e3 | yes | 活跃 | 3 (168 Hours) | 8 | Tin (Sn) | 2.3V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G8 | 3.6V | 2.3V | 32Mb 4M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O, QPI, DTR | 4MX8 | 8 | 800μs | 33554432 bit | SERIAL | 3V | 1 | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C56BT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C56B | 8 | 5V | Serial | 2Kb 128 x 16 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 16 | 2ms | 2 kb | MICROWIRE | 2ms | 3mm | 2mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC160B-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 25LC160B | 8 | 5.5V | 3/5V | 2.5V | SPI, Serial | 16Kb 2K x 8 | 6mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000005A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 5.334mm | 9.271mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B104NA-BA25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.2.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.41 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.75mm | 30 | CY14B104 | 48 | 3V | 3.6V | 2.7V | 4Mb 256K x 16 | 70mA | NVSRAM | Parallel | 16b | 256KX16 | 16 | 25ns | 4 Mb | 0.005A | 25 ns | 16b | 1.2mm | 10mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | LE25S40AMCTWG | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~90°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 8 | Nickel/Gold/Palladium (Ni/Au/Pd) | ALSO AVAILABLE IN SOIC-8 PACKAGE | 1.65V~1.95V | DUAL | 1 | 1.8V | 1.27mm | 8 | R-PDSO-G8 | 1.95V | 1.65V | SPI, Serial | 4Mb 512K x 8 | SYNCHRONOUS | 40MHz | FLASH | SPI | 512KX8 | 8 | 1ms | 4194304 bit | 1.8V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128SAGMFI011 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2014 | FL-S | e3 | 活跃 | 3 (168 Hours) | 16 | 3A991.B.1.A | IT ALSO CONFIGURED AS 256M X 1 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 32MX4 | 4 | 1b | 128 Mb | 0.0001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 2.65mm | 10.3mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LV6416-10TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | 0°C~70°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.B | Matte Tin (Sn) - annealed | 8542.32.00.41 | 3.135V~3.6V | DUAL | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | 44 | 不合格 | 3.63V | 3.3V | 3.135V | 1Mb 64K x 16 | SRAM | Parallel | 64KX16 | 3-STATE | 16 | 10ns | 0.005A | 1048576 bit | 10 ns | COMMON | 3.14V | 1.2mm | 18.415mm | 10.16mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC04BHT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 0.65mm | 40 | 24LC04BH | 8 | 不合格 | 5V | I2C, Serial | 4Kb 256 x 8 x 2 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | OPEN-DRAIN | 8 | 5ms | 4 kb | 0.000005A | ISO/TS-16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | YES | 16words | 1010XXMR | NO | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC256T-I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 25LC256 | 8 | 5.5V | 2/5V | 2.5V | SPI, Serial | 256Kb 32K x 8 | 6mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 256 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1mm | 5.99mm | 4.92mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT93C66AW-10SU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 1MHz | AT93C66A | 5V | Serial | 5.5V | 2.7V | 4Kb 512 x 8 256 x 16 | 2mA | 2MHz | EEPROM | SPI | 10ms | 4 kb | 1MHz | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29AL016J70BFA013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 48-VFBGA | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | Automotive, AEC-Q100, AL-J | 活跃 | 3 (168 Hours) | 48 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3V | 0.8mm | 未说明 | R-PBGA-B48 | 3.6V | 2.7V | 16Mb 2M x 8 1M x 16 | ASYNCHRONOUS | FLASH | Parallel | 1MX16 | 16 | 70ns | 16777216 bit | 70 ns | 3V | 8 | 1mm | 8.15mm | 6.15mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 34AA04T-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2014 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~3.6V | DUAL | 260 | 1 | 2.2V | 1.27mm | 40 | 34AA04 | R-PDSO-G8 | 3.6V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | SYNCHRONOUS | 1MHz | 350ns | EEPROM | I2C | 512X8 | 8 | 5ms | 4096 bit | TS 16949 | I2C | 5ms | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA00T/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24AA00 | 8 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 128b 16 x 8 | 3mA | 400kHz | 3500ns | EEPROM | I2C | 8 | 4ms | 128 b | 0.000001A | I2C | 1000000 Write/Erase Cycles | 4ms | 200 | 1010XXXR | 1.75mm | 4.9mm | 3.91mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC160CT-H/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~150°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 3A001.A.2.A | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 1.27mm | 40 | 25LC160C | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 5MHz | 100 ns | EEPROM | SPI | 8 | 6ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 6ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC58BYG0S3HBAI6 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 67-VFBGA | YES | Non-Volatile | -40°C~85°C TA | Tray | Benand™ | 活跃 | 3 (168 Hours) | 67 | 1.7V~1.95V | BOTTOM | 1 | 1.8V | 0.8mm | R-PBGA-B67 | 1.95V | 1.7V | 1Gb 128M x 8 | ASYNCHRONOUS | FLASH | Parallel | 128MX8 | 8 | 25ns | 1073741824 bit | 1.8V | 1mm | 8mm | 6.5mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL128P0XNFI013 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2015 | FL-P | e3 | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 128Mb 16M x 8 | 22mA | 104MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 8 | 3ms | 1b | 128 Mb | 0.00002A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25AA040AT-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 25AA040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24AA256T-I/SMG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SOP, SOP8,.3 | 小概要 | 1 | 32000 | PLASTIC/EPOXY | SOP8,.3 | -40 °C | 40 | 85 °C | 有 | 24AA256T-I/SMG | 0.4 MHz | 32768 words | SOP | RECTANGULAR | Microchip Technology Inc | Obsolete | MICROCHIP TECHNOLOGY INC | 5.34 | SOIC | YES | 8 | Compliant | Tape & Reel (TR) | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 400 kHz | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.7 V | I2C | 5.5 V | 1.8 V | 32 kB | SYNCHRONOUS | 0.003 mA | 900 ns | 32KX8 | 2.03 mm | 8 | 0.000001 A | 262144 bit | 400 kHz | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 200 | HARDWARE | 1010DDDR | NO | 5.26 mm | 5.25 mm | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL032N90TFI023 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-N | e3 | 活跃 | 3 (168 Hours) | 56 | 3A991.B.1.A | 哑光锡 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 40 | 3.6V | 3/3.3V | 2.7V | 32Mb 4M x 8 2M x 16 | 50mA | FLASH | Parallel | 16b | 2MX16 | 16 | 90ns | 32 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 64 | 64K | 8/16words | YES | BOTTOM/TOP | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC66CT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2008 | e3 | yes | Discontinued | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 0.65mm | 40 | 93LC66C | 8 | 5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1mm | 3mm | 2.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1315KV18-250BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | 活跃 | 3 (168 Hours) | 165 | Tin/Lead (Sn/Pb) | 流水线结构 | 1.7V~1.9V | BOTTOM | 235 | 1 | 1.8V | 1mm | 20 | CY7C1315 | 165 | 1.8V | 1.9V | 1.7V | 18Mb 512K x 36 | 2 | 590mA | 250MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 17b | 18 Mb | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C256E-25DM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 通孔 | 28-CDIP (0.600, 15.24mm) | 28 | Non-Volatile | -55°C~125°C TC | Tube | 活跃 | 1 (Unlimited) | 28 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 250GHz | AT28C256 | 5V | Parallel, SPI | 256Kb 32K x 8 | 50mA | 250ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 256 kb | 0.0003A | MIL-STD-883 Class C | 5V | 100000 Write/Erase Cycles | 10 | HARDWARE/SOFTWARE | YES | 5.72mm | 37.215mm | 15.24mm | 无 | Non-RoHS Compliant | 含铅 |