类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||||
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 | AT21CS01-SSHM17-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 2005 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~3.6V | DUAL | 260 | 1 | 1.8V | 1.27mm | 40 | AT21CS01 | 3.6V | 1.7V | 1Kb 128 x 8 | SYNCHRONOUS | 125kHz | EEPROM | I2C, Single Wire | 8 | 5ms | 1024 bit | SERIAL | 1-WIRE | 5ms | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 25LC640T-E/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Compliant | Tape & Reel (TR) | 125 °C | -40 °C | 2 MHz | SPI, Serial | 5.5 V | 4.5 V | 8 kB | 150 ns | 64 kb | 3 MHz | 无 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC014T-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 1 | 0.65mm | 24LC014 | 5V | I2C, Serial | 1Kb 128 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA02E64T-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | 活跃 | 1 (Unlimited) | 8 | 100KHZ AVAILABLE @1.7V | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24AA02E64 | R-PDSO-G8 | 不合格 | 5.5V | 1.8/5V | 2.5V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 256X8 | 8 | 5ms | 0.000005A | 2048 bit | TS 16949 | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | 1010XXXR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR25L320FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e2 | yes | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | 锡铜 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 10 | BR25L320 | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 3mA | 5MHz | 70 ns | EEPROM | SPI | 8 | 5ms | 32 kb | 0.000002A | SPI | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE/SOFTWARE | 1.65mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV1288BLL-55QLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tube | e3 | yes | 活跃 | 2 (1 Year) | 32 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~3.6V | DUAL | 260 | 1 | 3V | 40 | 32 | 3.3V | 3.6V | 2.5V | 1Mb 128K x 8 | 1 | 8mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 17b | 1 Mb | 0.000005A | 55 ns | COMMON | Asynchronous | 8b | 3mm | 20.445mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL01GS10DHI020 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | GL-S | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | 1Gb 64M x 16 | 60mA | 100ns | FLASH | Parallel | 16b | 128MX8 | 8 | 60ns | 26b | 1 Gb | 0.0001A | Asynchronous | 16b | 3V | YES | YES | YES | 1K | 64K | 32B | YES | BOTTOM/TOP | YES | 1.4mm | 9mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24T16FVM-WTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 哑光锡 | 1.6V~5.5V | DUAL | 225 | 1 | 2.5V | 0.65mm | 未说明 | R-PDSO-G8 | 不合格 | 5.5V | 1.8/5V | 1.6V | 2-Wire, I2C, Serial | 16Kb 2K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 2KX8 | 8 | 5ms | 16 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010MMMR | 0.9mm | 2.9mm | 2.8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61C64AL-10JLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 28-BSOJ (0.300, 7.62mm Width) | YES | 28 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) - annealed | 4.75V~5.25V | DUAL | 260 | 1 | 5V | 40 | 28 | 5V | 5V | 64Kb 8K x 8 | 1 | 50mA | SRAM | Parallel | 8KX8 | 3-STATE | 10ns | 13b | 64 kb | COMMON | Asynchronous | 8b | 2V | 3.56mm | 7.62mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62148ELL-55SXA | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 32-SOIC (0.445, 11.30mm Width) | 32 | Volatile | -40°C~85°C TA | Tube | 2007 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 32 | Nickel/Palladium/Gold (Ni/Pd/Au) | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 20 | CY62148 | 32 | 5V | 5V | 4Mb 512K x 8 | 1 | 20mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 19b | 4 Mb | 0.000007A | 18MHz | 55 ns | COMMON | Asynchronous | 8b | 2V | 2.997mm | 20.4465mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| K4B1G1646G-BCH9 | Samsung | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, FINE PITCH | 3 | 64000000 | PLASTIC/EPOXY | BGA96,9X16,32 | 未说明 | 0.255 ns | 有 | K4B1G1646G-BCH9 | 667 MHz | 67108864 words | 1.5 V | FBGA | RECTANGULAR | 三星半导体 | Obsolete | SAMSUNG SEMICONDUCTOR INC | 8.58 | YES | 96 | FBGA, BGA96,9X16,32 | e1 | 有 | Tin/Silver/Copper (Sn/Ag/Cu) | DRAMs | CMOS | BOTTOM | BALL | 225 | 0.8 mm | compliant | R-PBGA-B96 | 不合格 | 1.5 V | 0.17 mA | 64MX16 | 3-STATE | 16 | 0.01 A | 1073741824 bit | COMMON | DDR DRAM | 8192 | 4,8 | 4,8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W29GL064CB7S | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48 | Non-Volatile | -40°C~85°C TA | Tube | 2012 | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | 48 | 3.6V | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | FLASH | Parallel | 64MX1 | 1 | 70ns | 22b | 64 Mb | 0.000005A | 70 ns | 3V | 8 | YES | YES | YES | 8127 | 8K64K | 8/16words | YES | BOTTOM | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF1602-70-4C-EKE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2011 | SST39 MPF™ | e3 | 活跃 | 3 (168 Hours) | 48 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 0.5mm | SST39VF1602 | 3.3V | 16Mb 1M x 16 | 18mA | 70ns | FLASH | Parallel | 16b | 1MX16 | 16 | 10μs | 20b | 16 Mb | 0.00002A | Asynchronous | 16b | YES | YES | YES | 512 | 2K | TOP | YES | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC08BH-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC08BH | 8 | 5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BR25H020FVM-2CTR | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-VSSOP, 8-MSOP (0.110, 2.80mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 2Kb 256 x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE/SOFTWARE | 0.9mm | 2.9mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128P10FFI012 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | GL-P | e1 | 活跃 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 128Mb 16M x 8 | 110mA | FLASH | Parallel | 128MX1 | 1 | 100ns | 128 Mb | 0.000005A | 100 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 11mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL208K0RMFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | FL2-K | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 25mA | 76MHz | 5 ns | FLASH | SPI | 8b | 8 | 5ms | 1b | 8 Mb | 0.000032A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 2.159mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24AA08T-I/MSG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ROHS COMPLIANT, PLASTIC, MSOP-8 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 1000 | PLASTIC/EPOXY | TSSOP8,.19 | -40 °C | 40 | 85 °C | 有 | 24AA08T-I/MSG | 0.1 MHz | 1024 words | 2.5 V | TSSOP | SQUARE | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.26 | MSOP | YES | 8 | Compliant | Tape & Reel (TR) | e3 | 有 | EAR99 | Matte Tin (Sn) | 85 °C | -40 °C | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 400 kHz | 8 | S-PDSO-G8 | 不合格 | 5.5 V | 2/5 V | INDUSTRIAL | 1.7 V | I2C | 5.5 V | 1.8 V | 1 kB | SYNCHRONOUS | 0.003 mA | 900 ns | 1KX8 | 1.1 mm | 8 | 0.000001 A | 8192 bit | 400 kHz | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 200 | HARDWARE | 1010XMMR | 3 mm | 3 mm | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT93C56A-10TU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 1MHz | AT93C56A | 5V | Serial | 5.5V | 2.7V | 2Kb 256 x 8 128 x 16 | 2mA | 2MHz | 2 μs | EEPROM | SPI | 10ms | 2 kb | 1MHz | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25C080-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 8-DIP (0.300, 7.62mm) | NO | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 25C080 | 8 | 5V | 5V | SPI, Serial | 8Kb 1K x 8 | 5mA | 3MHz | 150 ns | EEPROM | SPI | 5ms | 8 kb | 0.000005A | SPI | 10000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 4.953mm | 10.16mm | 7.112mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43DR16320D-3DBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 表面贴装 | 84-TFBGA | 84 | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 84 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 可编程赌场延迟 | 8542.32.00.28 | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 不合格 | 1.8V | 1.9V | 1.7V | 512Mb 32M x 16 | 1 | 230mA | SYNCHRONOUS | 333MHz | 450ps | DRAM | Parallel | 32MX16 | 3-STATE | 16 | 15ns | 15b | 512 Mb | 0.025A | COMMON | 8192 | 48 | 48 | 1.2mm | 12.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43R16160D-5TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 66-TSSOP (0.400, 10.16mm Width) | 66 | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 66 | EAR99 | AUTO/SELF REFRESH | 8542.32.00.24 | 2.3V~2.7V | DUAL | 1 | 2.5V | 0.65mm | 66 | 2.5V | 2.7V | 2.3V | 256Mb 16M x 16 | 1 | 330mA | 200MHz | 700ps | DRAM | Parallel | 16b | 16MX16 | 3-STATE | 16 | 15ns | 15b | 256 Mb | 0.004A | COMMON | 8192 | 248 | 248 | 1.2mm | 22.22mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128S11TFIV10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | GL-S | e3 | 活跃 | 3 (168 Hours) | 56 | 8542.32.00.51 | 1.65V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 3.6V | 3/3.3V | 2.7V | 128Mb 8M x 16 | 60mA | 110ns | FLASH | Parallel | 16b | 16MX8 | 8 | 60ns | 23b | 128 Mb | 0.0001A | Asynchronous | 16b | 2.7V | YES | YES | YES | 128 | 64K | 32B | YES | YES | 1.2mm | 18.4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL208K0RMFI041 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | FL2-K | Obsolete | 3 (168 Hours) | 8 | EAR99 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 25mA | 76MHz | 10 ns | FLASH | SPI | 8b | 8 | 5ms | 1b | 8 Mb | 0.000032A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 1.75mm | 4.9mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M95320-WMN6TP/P | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 镍钯金 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | M95320 | 8 | 5V | SPI, Serial | 32Kb 4K x 8 | 4mA | 20MHz | 40 ns | EEPROM | SPI | 8 | 5ms | 32 kb | SPI | 5ms | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant |