类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 访问时间（最大） | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | AT25040A-10TU-2.7 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | 8-TSSOP | Non-Volatile | -40°C~85°C TA | Tube | Obsolete | 1 (Unlimited) | 85°C | -40°C | 2.7V~5.5V | 10MHz | AT25040 | 5V | 2-Wire, SPI, Serial | 5.5V | 2.7V | 4Kb 512 x 8 | 10mA | 20MHz | 40 ns | EEPROM | SPI | 5ms | 4 kb | 10MHz | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL512P10TFIR10 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | GL-P | e3 | Obsolete | 3 (168 Hours) | 56 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 3.6V | 3.3V | 3V | 512Mb 32M x 16 | 110mA | FLASH | Parallel | 8b | 512MX1 | 1 | 100ns | 512 Mb | 0.000005A | 100 ns | Asynchronous | 3V | 8 | YES | YES | YES | 512 | 128K | 8/16words | YES | YES | 1.2mm | 18.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | R1LP0408DSP-5SI#S0 | Renesas Electronics America | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 表面贴装 | 表面贴装 | 32-SOIC (0.450, 11.40mm Width) | 32 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | yes | 最后一次购买 | 3 (168 Hours) | 32 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 未说明 | R1LP0408 | 32 | 不合格 | 5V | 5V | 4Mb 512K x 8 | 1 | 25mA | SRAM | Parallel | 3-STATE | 8 | 55ns | 19b | 4 Mb | 55 ns | COMMON | Asynchronous | 8b | 2V | 3.05mm | 20.75mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT29C512-70JU | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-LCC (J-Lead) | 32-PLCC (13.97x11.43) | Non-Volatile | -40°C~85°C TC | Tube | 1997 | Obsolete | 2 (1 Year) | 4.5V~5.5V | AT29C512 | 512Kb 64K x 8 | 70ns | FLASH | Parallel | 10ms | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL256SAGBHI310 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 24-TBGA | 24 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | FL-S | 活跃 | 3 (168 Hours) | 24 | 3A991.B.1.A | ALSO CONFIGURABLE AS 128M X 1 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 1 | 3V | 1mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | 75mA | 133MHz | 8 ns | FLASH | SPI - Quad I/O | 8b | 64MX4 | 4 | 1b | 256 Mb | 0.0001A | Synchronous | 1b | 3V | SPI | 100000 Write/Erase Cycles | 500ms | 20 | HARDWARE/SOFTWARE | 2 | BOTTOM | 1.2mm | 8mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| M24C04-DRDW3TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.7V~5.5V | DUAL | 未说明 | 1 | 2.5V | 0.65mm | 未说明 | M24C04 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 450ns | EEPROM | I2C | 8 | 4ms | 4096 bit | I2C | 4ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B104NA-ZS25XI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tray | 2011 | e4 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 1W | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 1MHz | 30 | CY14B104 | 44 | 不合格 | 3V | 3.6V | 2.7V | 4Mb 256K x 16 | 70mA | ASYNCHRONOUS | NVSRAM | Parallel | 16b | 256KX16 | 25ns | 18b | 4 Mb | 0.005A | 25 ns | 16b | 1.044mm | 18.52mm | 10.262mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC02BH-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2000 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 24LC02BH | 8 | 不合格 | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XXXR | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST25VF080B-80-4I-SAE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | 540.001716mg | Non-Volatile | -40°C~85°C TA | Tube | 2005 | SST25 | e3 | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | Matte Tin (Sn) | 2.7V~3.6V | DUAL | 260 | 1 | 1.27mm | 40 | SST25VF080B | 8 | 3.3V | 3.6V | 2.7V | SPI, Serial | 8Mb 1M x 8 | 20mA | 25mA | 80MHz | 6 ns | FLASH | SPI | 8b | 8 | 10μs | 1b | 8 Mb | 0.00002A | Synchronous | 8b | 2.7V | SPI | 100000 Write/Erase Cycles | 100 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24T32FJ-WE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Copper, Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 1.6V~5.5V | DUAL | 225 | 1 | 2.5V | 1.27mm | 未说明 | BR24T32 | 不合格 | 5.5V | 1.6V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | SYNCHRONOUS | 400kHz | 900 ns | EEPROM | I2C | 8 | 5ms | 32 kb | 0.000002A | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 1.65mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC58NVG1S3HTA00 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | 0°C~70°C TA | Tray | 活跃 | 3 (168 Hours) | 48 | 2.7V~3.6V | DUAL | 1 | 3.3V | 0.5mm | R-PDSO-G48 | 3.6V | 2.7V | 2Gb 256M x 8 | ASYNCHRONOUS | FLASH | Parallel | 256MX8 | 8 | 25ns | 2147483648 bit | 3.3V | 1.2mm | 18.4mm | 12mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C76C-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.9mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16800F-7TLI-TR | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | YES | 54 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 54 | 3V~3.6V | DUAL | 3.3V | 0.8mm | 不合格 | 3.3V | 128Mb 8M x 16 | 143MHz | 5.4ns | DRAM | Parallel | 16b | 8MX16 | 3-STATE | 16 | 0.002A | 134217728 bit | COMMON | 4096 | 1248FP | 1248 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62256VLL-70SNC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Volatile | 0°C~70°C TA | Tube | 2002 | MoBL® | e0 | Obsolete | 3 (168 Hours) | 28 | EAR99 | Tin/Lead (Sn/Pb) | AUTOMATIC POWER-DOWN | 8542.32.00.41 | 2.7V~3.6V | DUAL | 225 | 1 | 3V | 1.27mm | not_compliant | 70GHz | 30 | CY62256 | 28 | R-PDSO-G28 | 不合格 | 3.6V | 3/3.3V | 2.7V | 256Kb 32K x 8 | 1 | 0.03mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 70ns | 262144 bit | 70 ns | COMMON | 2V | YES | 2.794mm | 17.9324mm | 7.5057mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS61LPS12836A-200TQLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Industrial grade | 表面贴装 | 100-LQFP | YES | 100 | Volatile | -40°C~85°C TA | Tray | e3 | yes | 活跃 | 3 (168 Hours) | 100 | 3A991 | Matte Tin (Sn) - annealed | 流水线结构 | 3.135V~3.465V | QUAD | 260 | 1 | 3.3V | 0.65mm | 10 | 100 | 3.3V | 3.135V | 4.5Mb 128K x 36 | 4 | 210mA | 200MHz | 3.1ns | SRAM | Parallel | 128KX36 | 3-STATE | 36 | 17b | 4.5 Mb | 0.075A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC010A-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 1 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C46BT-E/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C46B | 8 | 5V | 5V | Serial | 1Kb 64 x 16 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 64X16 | 16 | 2ms | 1 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IS42S16320D-7TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 54-TSOP (0.400, 10.16mm Width) | 54 | Volatile | -40°C~85°C TA | Tray | e3 | 活跃 | 3 (168 Hours) | 54 | EAR99 | AUTO/SELF REFRESH | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | 54 | 3.3V | 3.6V | 3V | 512Mb 32M x 16 | 1 | 170mA | 143MHz | 5.4ns | DRAM | Parallel | 16b | 32MX16 | 3-STATE | 16 | 15b | 512 Mb | 0.004A | COMMON | 8192 | 1248FP | 1248 | 1.2mm | 22.22mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL256P11FFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2012 | GL-P | e1 | 活跃 | 3 (168 Hours) | 64 | 3A991.B.1.A | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 256Mb 32M x 8 | 110mA | FLASH | Parallel | 8b | 256MX1 | 1 | 110ns | 256 Mb | 0.000005A | 110 ns | Asynchronous | 3V | 8 | YES | YES | YES | 256 | 128K | 8/16words | YES | YES | 1.4mm | 13mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC512T-E/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 4.5V | 1.27mm | 40 | 24LC512 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 512Kb 64K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 512 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1mm | 6mm | 5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C56AT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 3 (168 Hours) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C56A | 8 | 5V | 5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 2ms | 2 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1mm | 3mm | 2mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MX66L51235FZ2I-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2012 | MX25xxx35/36 - MXSMIO™ | e3 | 不用于新设计 | 3 (168 Hours) | 8 | Tin (Sn) | ALSO IT CAN BE CONFIGURED AS 512M X 1 BIT | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-N8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 512Mb 64M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 128MX4 | 4 | 40ms, 3ms | 0.00004A | 536870912 bit | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 0.8mm | 8mm | 6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC08BH-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2007 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24LC08BH | 8 | 不合格 | 5V | I2C, Serial | 8Kb 256 x 8 x 4 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010XMMR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C76BT-I/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-23-6 | 6 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 93C76B | 6 | 5V | 5V | Serial | 8Kb 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 16 | 2ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 1.45mm | 2.95mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA025E64T-E/OT | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Automotive grade | Tin | 表面贴装 | 表面贴装 | SC-74A, SOT-753 | 6 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2009 | e3 | 活跃 | 1 (Unlimited) | 5 | 100KHZ AVAILABLE @1.7V | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 0.95mm | 40 | 24AA025E64 | R-PDSO-G5 | 不合格 | 5.5V | 1.8/5V | 2.5V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 0.000005A | 2048 bit | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | 10100DDR | 1.45mm | 2.9mm | 1.55mm | ROHS3 Compliant |