类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 终端数量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 端口的数量 | 电源电流 | 速度 | 操作模式 | 最大电源电流 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间(最大) | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 刷新周期 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 组织的记忆 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||||||||||||||||||||||||||||||||||
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![]() | 25C040XT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1M ENDURANCE CYCLES | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25C040 | 8 | 5V | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 3MHz | 150 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24AA044-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2002 | e3 | 活跃 | 1 (Unlimited) | 8 | 1.7V~5.5V | DUAL | NOT APPLICABLE | 1 | 2.5V | 1.27mm | NOT APPLICABLE | 24AA044 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 4Kb 256 x 8 x 2 | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | TS 16949 | I2C | 5ms | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1041G-10ZSXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | 活跃 | 3 (168 Hours) | 44 | 3A991.B.2.A | 8542.32.00.41 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.8mm | 未说明 | R-PDSO-G44 | 5.5V | 4.5V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 10ns | 4194304 bit | 10 ns | 1.194mm | 18.415mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1355B-100AC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tray | 2002 | Obsolete | 3 (168 Hours) | 100 | FLOW-THROUGH ARCHITECTURE | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | unknown | CY7C1355 | 100 | 不合格 | 3.3V | 3.63V | 9Mb 256K x 36 | 1 | 180mA | 100MHz | 7.5ns | SRAM | Parallel | 256KX36 | 3-STATE | 36 | 18b | 9 Mb | 0.03A | COMMON | Synchronous | 36b | 20mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | K4B2G0846D-HCH9 | Samsung | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | GRID ARRAY, FINE PITCH | 256000000 | PLASTIC/EPOXY | BGA78,9X13,32 | 0.255 ns | 85 °C | 有 | K4B2G0846D-HCH9 | 667 MHz | 268435456 words | 1.5 V | FBGA | RECTANGULAR | 三星半导体 | Obsolete | SAMSUNG SEMICONDUCTOR INC | 5.79 | YES | 78 | FBGA, BGA78,9X13,32 | DRAMs | CMOS | BOTTOM | BALL | 0.8 mm | compliant | R-PBGA-B78 | 不合格 | 1.5 V | OTHER | 0.135 mA | 256MX8 | 3-STATE | 8 | 0.012 A | 2147483648 bit | COMMON | DDR DRAM | 8192 | 8 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IS25LP032D-JTLA3-TR | Integrated Silicon Solution, Inc. (ISSI) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 2.3 V | 25 mA | QPI, SPI | 133 MHz | Synchronous | - 40 C | + 125 C | 5000 | Tape & Reel (TR) | 活跃 | Non-Volatile | 3.6 V | HVSON, | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 4000000 | PLASTIC/EPOXY | -40 °C | 未说明 | 125 °C | 有 | IS25LP032D-JTLA3-TR | 133 MHz | 4194304 words | 3 V | HVSON | RECTANGULAR | 活跃 | INTEGRATED SILICON SOLUTION INC | 5.64 | Automotive grade | 表面贴装 | USON-8 | YES | 8-USON (4x3) | 8 | ISSI, Integrated Silicon Solution Inc | SMD/SMT | -40°C ~ 125°C (TA) | 切割胶带 | IS25LP032D | FLASH - NOR (SLC) | 2.3V ~ 3.6V | DUAL | 无铅 | 未说明 | 1 | 0.8 mm | compliant | R-PDSO-N8 | 3.6 V | AUTOMOTIVE | 2.3 V | 32 Mbit | 133 MHz | SYNCHRONOUS | 133 MHz | 25 mA | 7 ns | FLASH | SPI - Quad I/O, QPI, DTR | 8 bit | 4 M x 8 | 0.6 mm | 8 | 40µs, 800µs | 33554432 bit | AEC-Q100 | SERIAL | FLASH | 3 V | 4M x 8 | 4 mm | 3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | SST26WF064C-104I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | SST26 SQI® | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 1.65V~1.95V | DUAL | 1 | 1.8V | 1.27mm | R-PDSO-G8 | 1.95V | 1.65V | 64Mb 8M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 1.5ms | 67108864 bit | TS 16949 | SERIAL | 1.8V | 2.03mm | 5.26mm | 5.25mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C006AV-25AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 64-LQFP | 64 | Volatile | 0°C~70°C TA | Tray | 2000 | e4 | yes | Obsolete | 3 (168 Hours) | 64 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | QUAD | 260 | 1 | 3.3V | 0.8mm | 25GHz | 30 | CY7C006 | 64 | 3.3V | 3.6V | 3V | 128Kb 16K x 8 | 2 | 165mA | SRAM | Parallel | 16KX8 | 3-STATE | 8 | 25ns | 28b | 128 kb | COMMON | Asynchronous | 8b | 2V | 1.6mm | 14mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93C76CT-I/MC | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93C76C | 8 | 5V | 5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 2ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | HARDWARE/SOFTWARE | 8 | 1mm | 3mm | 2mm | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1370D-167AXCT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 100-LQFP | 100 | Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2011 | NoBL™ | e4 | yes | Obsolete | 3 (168 Hours) | 100 | 3A991.B.2.A | Nickel/Palladium/Gold (Ni/Pd/Au) | 流水线结构 | 3.135V~3.6V | QUAD | 260 | 1 | 3.3V | 0.65mm | 20 | CY7C1370 | 3.3V | 3.6V | 3.135V | 18Mb 512K x 36 | 4 | 275mA | 167MHz | 3.4ns | SRAM | Parallel | 512KX36 | 3-STATE | 36 | 19b | 18 Mb | 0.07A | COMMON | Synchronous | 36b | 1.6mm | 20mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1414JV18-250BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | Obsolete | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | unknown | 20 | CY7C1414 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 36Mb 1M x 36 | 2 | 1.29A | 250MHz | 450 ps | SRAM | Parallel | 1MX36 | 3-STATE | 36 | 19b | 36 Mb | 0.35A | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 17mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | FM24V01-G | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2008 | F-RAM™ | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 20 | FM24V01 | 8 | 3.3V | 3.6V | 2V | 2-Wire, I2C, Serial | 128Kb 16K x 8 | 1mA | 3.4MHz | 130ns | FRAM | I2C | 8b | 128 kb | 0.00015A | 8b | 1.478mm | 4.98mm | 3.987mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR25H020FJ-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2013 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | ALSO OPERATES AT 2.5V WITH 5MHZ AND SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 4.5V | 2Kb 256 x 8 | SYNCHRONOUS | 10MHz | EEPROM | SPI | 8 | 4ms | 0.00001A | SERIAL | SPI | 1000000 Write/Erase Cycles | 4ms | 100 | HARDWARE/SOFTWARE | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1520KV18-333BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 30 | CY7C1520 | 165 | 1.8V | 72Mb 2M x 36 | 1 | 640mA | 333MHz | 450 ps | SRAM | Parallel | 2MX36 | 3-STATE | 36 | 21b | 72 Mb | COMMON | Synchronous | 36b | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAV25040YE-GT3 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Automotive grade | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | Automotive, AEC-Q100 | e4 | yes | 活跃 | 1 (Unlimited) | 8 | 2.5V~5.5V | DUAL | 未说明 | 1 | 5V | 0.65mm | 未说明 | 8 | 5.5V | 2.5V | SPI, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 10MHz | 35 ns | EEPROM | SPI | 8 | 5ms | 4 kb | SPI | 5ms | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT21CS01-SSHM10-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2017 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.7V~3.6V | DUAL | 1 | 1.8V | 1.27mm | AT21CS01 | R-PDSO-G8 | 3.6V | 1.7V | 1Kb 128 x 8 | SYNCHRONOUS | 125kHz | EEPROM | I2C, Single Wire | 128X8 | 8 | 5ms | 1024 bit | SERIAL | 1-WIRE | 5ms | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MX30LF1GE8AB-TI | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | -40°C | YES | 85°C | Tray | 2015 | e3 | 活跃 | 3 (168 Hours) | 48 | NAND类型 | Matte Tin (Sn) | DUAL | 鸥翼 | 260 | 1 | 3V | 0.5mm | 40 | R-PDSO-G48 | 3.6V | INDUSTRIAL | 2.7V | ASYNCHRONOUS | 128MX8 | 8 | 1073741824 bit | PARALLEL | FLASH | 2.7V | 1.2mm | 18.4mm | 12mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | AT28HC256E-90DM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | 通孔 | 通孔 | 28-CDIP (0.600, 15.24mm) | 28 | Non-Volatile | -55°C~125°C TC | Tube | e0 | 活跃 | 1 (Unlimited) | 28 | 3A001.A.2.C | 锡铅 | 自动写入 | 8542.32.00.51 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | AT28HC256 | 5V | Parallel, SPI | 256Kb 32K x 8 | 80mA | 90ns | EEPROM | Parallel | 32KX8 | 8 | 10ms | 256 kb | MIL-STD-883 Class C | 5V | 10ms | 5.72mm | 37.215mm | 15.24mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY7C1418AV18-167BZC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 165-LBGA | YES | 165 | Volatile | 0°C~70°C TA | Tray | 2006 | e0 | Obsolete | 3 (168 Hours) | 165 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 流水线结构 | 8542.32.00.41 | 1.7V~1.9V | BOTTOM | 220 | 1 | 1.8V | 1mm | not_compliant | 未说明 | CY7C1418 | 165 | 不合格 | 1.8V | 1.9V | 1.7V | 36Mb 2M x 18 | 167MHz | 500 ps | SRAM | Parallel | 2MX18 | 3-STATE | 18 | 36 Mb | 0.22A | COMMON | 1.7V | 1.4mm | 17mm | 15mm | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CY62256VNLL-70ZRXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 28-TSSOP (0.465, 11.80mm Width) | 28 | Volatile | -40°C~85°C TA | Tray | 2002 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.55mm | 70GHz | 20 | CY62256 | 28 | 3V | 3.6V | 2.7V | 256Kb 32K x 8 | 1 | 30mA | 30mA | SRAM | Parallel | 32KX8 | 3-STATE | 8 | 70ns | 15b | 256 kb | 0.000006A | 70 ns | COMMON | Asynchronous | 8b | YES | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | BR93H56RF-2CE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | Automotive grade | 表面贴装 | 8-SOIC (0.173, 4.40mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Cut Tape (CT) | 2016 | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 2.5V~5.5V | DUAL | 未说明 | 1 | 4V | 1.27mm | 未说明 | 不合格 | 5.5V | 3/5V | 2.5V | 2Kb 128 x 16 | SYNCHRONOUS | 2MHz | EEPROM | SPI | 16 | 4ms | 0.00001A | SERIAL | MICROWIRE | 1000000 Write/Erase Cycles | 4ms | 100 | SOFTWARE | 1.71mm | 5mm | 4.4mm | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 34LC02T-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.2V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 34LC02 | 8 | 不合格 | 5V | 2.2V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 1MHz | 400ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA76CT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 93AA76C | 8 | 5.5V | 2/5V | Serial | 8Kb 1K x 8 512 x 16 | 3mA | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 8 | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 24AA64XT/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | 0°C~70°C TA | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA64 | 8 | 5.5V | 2/5V | I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | 93AA56AT-I/MNY | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Gold | 表面贴装 | 表面贴装 | 8-WFDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 5V | 0.5mm | 40 | 93AA56A | 8 | 5.5V | Serial | 2Kb 256 x 8 | 2mA | SYNCHRONOUS | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | MICROWIRE | 6ms | 3mm | 2mm | ROHS3 Compliant |