类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 端口的数量 | 电源电流 | 操作模式 | 最大电源电流 | 时钟频率 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 输出启用 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||
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 | AT28C010-15EM/883 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | Military grade | Lead, Tin | 表面贴装 | 表面贴装 | 32-CLCC | 32 | Non-Volatile | -55°C~125°C TC | Tube | 1998 | e0 | no | 活跃 | 3 (168 Hours) | 32 | Tin/Lead (Sn/Pb) | AUTOMATIC WRITE; DATA RETENTION: 10 YEARS | 4.5V~5.5V | QUAD | 240 | 1 | 5V | 1.27mm | 150GHz | 30 | AT28C010 | 5V | 5V | 1Mb 128K x 8 | 80mA | 150ns | EEPROM | Parallel | 128KX8 | 3-STATE | 8 | 10ms | 1 Mb | 0.0003A | MIL-STD-883 | 5V | 10000 Write/Erase Cycles | 10ms | YES | YES | NO | 128words | 2.54mm | 13.97mm | 11.43mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||
 | M34C02-RDW6TP | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | e4 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.8V~5.5V | DUAL | 1 | 2.2V | 0.65mm | M34C02 | 8 | 5.5V | 2/5V | 2-Wire, I2C, Serial | 2Kb 256 x 8 | 2mA | 400kHz | 900ns | EEPROM | I2C | 10ms | 2 kb | 5e-7A | I2C | 1000000 Write/Erase Cycles | 10ms | 40 | HARDWARE/SOFTWARE | 1010DDDR | 1mm | 3mm | 4.4mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C00-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2-WIRE SERIAL INTERFACE; DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C00 | 8 | 5V | 5V | 2-Wire, I2C, Serial | 128b 16 x 8 | 2mA | 100kHz | 3500ns | EEPROM | I2C | 8 | 4ms | 128 b | 0.000001A | I2C | 1000000 Write/Erase Cycles | 4ms | 200 | 1010XXXR | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
 | SST39SF020A-70-4I-WHE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 32-TFSOP (0.488, 12.40mm Width) | 32 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST39 MPF™ | 活跃 | 3 (168 Hours) | 32 | 4.5V~5.5V | DUAL | 5V | 0.5mm | SST39SF020A | 5V | 5V | 2Mb 256K x 8 | 25mA | 70ns | FLASH | Parallel | 8b | 256KX8 | 8 | 20μs | 18b | 2 Mb | 0.0001A | Asynchronous | 8b | YES | YES | YES | 64 | 4K | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93C66-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 28 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2000 | e0 | no | 活跃 | 1 (Unlimited) | 8 | 10K ERASE/WRITE CYCLES MIN; DATA RETENTION > 40 YEARS | 4.5V~5.5V | DUAL | 1 | 5V | 1.27mm | 93C66 | 8 | 5V | 5V | 2-Wire, Serial | 4Kb 512 x 8 256 x 16 | 4mA | 2MHz | 6 ms | EEPROM | SPI | 3-STATE | 8 | 2ms | 4 kb | 0.0001A | MICROWIRE | 1000000 Write/Erase Cycles | 1ms | 40 | SOFTWARE | 16 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24AA128T-I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Gold | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 1000000 ERASE/WRITE CYCLES, HARDWARE WRITE PROTECT, DATA RETENTION > 200 YEARS | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 24AA128 | 8 | 5.5V | 2/5V | 1.7V | I2C, Serial | 128Kb 16K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 128 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1mm | 6mm | 5mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
 | AT25010B-MAHL-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | 活跃 | 3 (168 Hours) | 8 | EAR99 | ALSO OPERATES AT MIN 1.8 V AT 5 MHZ | 8542.32.00.51 | 1.8V~5.5V | DUAL | 未说明 | 1 | 5V | 0.5mm | 未说明 | R-PDSO-N8 | 5.5V | 4.5V | 1Kb 128 x 8 | SYNCHRONOUS | 20MHz | 900ns | EEPROM | SPI | 128X8 | 8 | 5ms | 1024 bit | SERIAL | SPI | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TH58BVG2S3HTA00 | Kioxia America, Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | 48-TSOP I | Non-Volatile | 0°C~70°C TA | Tray | Benand™ | 活跃 | 3 (168 Hours) | 2.7V~3.6V | 4Gb 512M x 8 | 25ns | FLASH | Parallel | 25ns | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93AA76BT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 93AA76B | 8 | 不合格 | 5V | Serial | 8Kb 512 x 16 | 3mA | SYNCHRONOUS | 3MHz | 100 ns | EEPROM | SPI | 512X16 | 16 | 5ms | 8 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 5ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | IS66WVE4M16TBLL-70BLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | 表面贴装 | 48-TFBGA | YES | 48 | Volatile | -40°C~85°C TA | Tray | e1 | 活跃 | 3 (168 Hours) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 0.75mm | 未说明 | 3.6V | 2.7V | 64Mb 4M x 16 | 1 | ASYNCHRONOUS | PSRAM | Parallel | 3-STATE | 16 | 70ns | 22b | 64 Mb | 70 ns | COMMON | 2.7V | NO | NO | 8mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W9712G6KB-25 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 84-TFBGA | 84 | Volatile | 0°C~85°C TC | Tray | 2016 | 活跃 | 3 (168 Hours) | 84 | AUTO/SELF REFRESH | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 不合格 | 1.8V | 1.9V | 1.7V | 128Mb 8M x 16 | 1 | 135mA | SYNCHRONOUS | 200MHz | 400ps | DRAM | Parallel | 8MX16 | 3-STATE | 16 | 15ns | 15b | 128 Mb | 0.008A | COMMON | 4096 | 48 | 48 | 1.2mm | 12.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | S70FL256P0XMFI001 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Non-Volatile | -40°C~85°C TA | Tube | 2013 | FL-P | Obsolete | 3 (168 Hours) | 16 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 256Mb 32M x 8 | 44mA | 32mA | 104MHz | 10.5 ns | FLASH | SPI | 8b | 256MX1 | 1 | 5μs | 25b | 256 Mb | 0.00002A | Synchronous | 8b | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 2.65mm | 10.3mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
 | SST25VF064C-80-4I-S3AE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2010 | SST25 | Obsolete | 3 (168 Hours) | 2.7V~3.6V | SST25VF064C | 3.3V | SPI, Serial | 64Mb 8M x 8 | 12mA | 80MHz | 6 ns | FLASH | SPI - Dual I/O | 8b | 2.5ms | 1b | 64 Mb | Synchronous | 8b | 256B | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M29W640GH70NA6E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 48-TFSOP (0.724, 18.40mm Width) | YES | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2009 | e3 | yes | Obsolete | 3 (168 Hours) | 48 | 3A991.B.1.A | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.5mm | 30 | M29W640 | 48 | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 10mA | FLASH | Parallel | 4MX16 | 16 | 70ns | 64 Mb | 0.0001A | 70 ns | Asynchronous | 8 | YES | YES | YES | 128 | 64K | 4/8words | YES | YES | 1.2mm | 18.4mm | 12mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| 24AA64XT-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 0.65mm | 40 | 24AA64 | 8 | 5.5V | 2/5V | I2C, Serial | 64Kb 8K x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 64 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDDR | 1.1mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | SST26VF064BT-104I/MN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | SST26 SQI® | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | SST26VF064 | R-PDSO-N8 | 3.6V | 2.7V | SPI | 64Mb 8M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 1.5ms | 67108864 bit | TS 16949 | SERIAL | 3V | 0.8mm | 8mm | 6mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25AA040AT-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 1.8V~5.5V | DUAL | 260 | 1 | 2.5V | 1.27mm | 40 | 25AA040A | 8 | 5V | SPI, Serial | 4Kb 512 x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 4 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2245KV18-450BZXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 165-LBGA | YES | 165 | Volatile | -40°C~85°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | 1.8V | 1.9V | 1.7V | 36Mb 1M x 36 | 2 | 450MHz | SRAM | Parallel | 1MX36 | 36 | 18b | 36 Mb | 0.45 ns | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC010A-E/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 25LC010A | 8 | 5V | SPI, Serial | 1Kb 128 x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 1 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 5.334mm | 9.27mm | 7.62mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1460KV33-167AXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 100-LQFP | YES | Volatile | 0°C~70°C TA | Tray | 2004 | NoBL™ | 活跃 | 3 (168 Hours) | 100 | 3A991.B.2.A | 流水线结构 | 8542.32.00.41 | 3.135V~3.6V | QUAD | 1 | 3.3V | 0.65mm | R-PQFP-G100 | 3.6V | 3.135V | 36Mb 1M x 36 | 167MHz | 3.4ns | SRAM | Parallel | 1MX36 | 36 | 37748736 bit | 1.6mm | 20mm | 14mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25LC160C-H/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~150°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | 3A001.A.2.A | Matte Tin (Sn) | 8542.32.00.51 | 2.5V~5.5V | DUAL | 260 | 1 | 2.7V | 1.27mm | 40 | 25LC160C | 8 | R-PDSO-G8 | 不合格 | 5.5V | 2/5V | 2.5V | 16Kb 2K x 8 | SYNCHRONOUS | 5MHz | EEPROM | SPI | 2KX8 | 8 | 6ms | 0.000001A | 16384 bit | SERIAL | SPI | 1000000 Write/Erase Cycles | 6ms | 200 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
 | M95040-DRMN8TP/K | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Automotive grade | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~105°C TA | Tape & Reel (TR) | Automotive, AEC-Q100 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 未说明 | 1 | 2.5V | 1.27mm | 未说明 | M95040 | 不合格 | 5.5V | 2/5V | SPI, Serial | 4Kb 512 x 8 | SYNCHRONOUS | 20MHz | EEPROM | SPI | 8 | 4ms | 0.000001A | 4096 bit | SPI | 900000 Write/Erase Cycles | 4ms | 50 | HARDWARE/SOFTWARE | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S16100H-6TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 50-TSOP (0.400, 10.16mm Width) | YES | Volatile | -40°C~85°C TA | Tray | 活跃 | 3 (168 Hours) | 50 | EAR99 | PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH | 3V~3.6V | DUAL | 1 | 3.3V | 0.8mm | R-PDSO-G50 | 不合格 | 3.6V | 3.3V | 3V | 16Mb 1M x 16 | 1 | SYNCHRONOUS | 166MHz | 5.5ns | DRAM | Parallel | 1MX16 | 3-STATE | 16 | 0.0035A | 16777216 bit | COMMON | 2048 | 1248FP | 1248 | 1.2mm | 20.95mm | 10.16mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39WF800B-70-4C-MAQE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 48-WFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2010 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 8542.32.00.51 | 1.65V~1.95V | BOTTOM | 260 | 1 | 1.8V | 0.5mm | 40 | SST39WF800B | 48 | 1.8V | 1.95V | 1.65V | 8Mb 512K x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 512KX16 | 16 | 40μs | 19b | 8 Mb | 0.00004A | Asynchronous | 16b | YES | YES | YES | 256 | 2K | YES | 0.73mm | 6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| AT24C04C-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | e4 | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | AT24C04 | R-PDSO-N8 | 5.5V | 1.7V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 550ns | EEPROM | I2C | 512X8 | 8 | 5ms | 4096 bit | SERIAL | I2C | 5ms | 0.6mm | 3mm | 2mm | ROHS3 Compliant |