类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 电压 | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 访问时间（最大） | 并行/串行 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 通用闪存接口 | I2C控制字节 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||
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 | MX25L1633EZNI-10G | Macronix | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tray | 2011 | MXSMIO™ | e3 | 不用于新设计 | 3 (168 Hours) | 8 | MATTE TIN (800) | IT ALSO CONFIGURED AS 16M X 1 | 2.7V~3.6V | DUAL | 260 | 1 | 3.3V | 1.27mm | 40 | R-PDSO-N8 | 不合格 | 3.6V | 3/3.3V | 2.7V | SPI, Serial | 16Mb 2M x 8 | SYNCHRONOUS | 104MHz | FLASH | SPI | 4MX4 | 4 | 50μs, 3ms | 16 Mb | 0.00002A | 2.7V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 0.8mm | 6mm | 5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 11LC080-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 11LC080 | 8 | 5V | Serial | 8Kb 1K x 8 | 5mA | 100kHz | EEPROM | 单线 | 5ms | 8 kb | 0.000005A | 1-WIRE | 1000000 Write/Erase Cycles | 10ms | 200 | SOFTWARE | 1.5mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24C02C-I/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | DATA RETENTION > 200 YEARS, 1000000 ERASE/WRITE CYCLES GUARANTEED | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 24C02C | 8 | 5V | 5V | I2C, Serial | 2Kb 256 x 8 | 3mA | 400kHz | 900ns | EEPROM | I2C | 8 | 1ms | 2 kb | 0.00005A | I2C | 1000000 Write/Erase Cycles | 1ms | 200 | HARDWARE | 1010DDDR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C2663KV18-450BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2001 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 40 | CY7C2663 | 165 | 1.8V | 1.9V | 1.7V | 144Mb 8M x 18 | 2 | 940mA | 450MHz | 450 ps | SRAM | Parallel | 8MX18 | 3-STATE | 18 | 21b | 144 Mb | 0.46A | SEPARATE | Synchronous | 18b | 1.7V | 1.4mm | 17mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MT28EW256ABA1LJS-0SIT | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Industrial grade | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tray | 2015 | 活跃 | 3 (168 Hours) | 56 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 0.5mm | 未说明 | R-PDSO-G56 | 3.6V | 2.7V | 256Mb 32M x 8 16M x 16 | ASYNCHRONOUS | 75ns | FLASH | Parallel | 16MX16 | 16 | 60ns | 268435456 bit | 3V | 8 | 1.2mm | 18.4mm | 14mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B101L-SP45XC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 48-BSSOP (0.295, 7.50mm Width) | 48 | Non-Volatile | 0°C~70°C TA | Tube | 2009 | e4 | Obsolete | 3 (168 Hours) | 48 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.635mm | unknown | 20 | CY14B101 | 48 | 不合格 | 3.3V | 3.6V | 2.7V | 1Mb 128K x 8 | 50mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 128KX8 | 8 | 45ns | 1 Mb | 0.003A | 45 ns | 8b | 2.794mm | 15.875mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC025-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 0.65mm | 40 | 24LC025 | 8 | 不合格 | 5.5V | 3/5V | 2.5V | I2C, Serial | 2Kb 256 x 8 | 3mA | SYNCHRONOUS | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 2 kb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | 1010DDDR | 1.2mm | 4.4mm | 3mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 24LC1026T-I/SM | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | Tin | 表面贴装 | 8-SOIC (0.209, 5.30mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 200 YEARS DATA RETENTION | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 24LC1026 | 8 | 5.5V | 3/5V | 2.5V | I2C, Serial | 1Mb 128K x 8 | 5mA | 400kHz | 900ns | EEPROM | I2C | 8 | 5ms | 1 Mb | 0.000005A | I2C | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE | 1010DDMR | 2.03mm | 5.26mm | 5.25mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC128T-I/MF | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2011 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 1.27mm | 40 | 25LC128 | 8 | 5V | SPI, Serial | 128Kb 16K x 8 | 5mA | 10MHz | 50 ns | EEPROM | SPI | 8 | 5ms | 128 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1mm | 5.99mm | 4.92mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT28C64B-15SU-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tape & Reel (TR) | 1997 | e3 | 活跃 | 3 (168 Hours) | 28 | Matte Tin (Sn) - annealed | 100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 1.27mm | 未说明 | R-PDSO-G28 | 5.5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | 150ns | EEPROM | Parallel | 8KX8 | 8 | 10ms | 65536 bit | 5V | 10ms | 2.65mm | 17.9mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 47C04-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Automotive grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Non-Volatile | -40°C~85°C TA | Tube | e3 | 活跃 | 不适用 | 8 | Matte Tin (Sn) - annealed | IT ALSO HAS EEPROM BACKUP OF 512 X 8 BITS | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 47C04 | R-PDIP-T8 | 5.5V | 4.5V | 4Kb 512 x 8 | SYNCHRONOUS | 1MHz | 400ns | EERAM | I2C | 512X8 | 8 | 1ms | 4096 bit | TS 16949 | 5.334mm | 9.271mm | 7.62mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS43TR16640B-15GBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 96-TFBGA | YES | Volatile | -40°C~95°C TC | Tray | e1 | 活跃 | 3 (168 Hours) | 96 | EAR99 | 锡银铜 | AUTO/SELF REFRESH | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | 未说明 | 1 | 1.5V | 0.8mm | 未说明 | R-PBGA-B96 | 1.575V | 1.425V | 1Gb 64M x 16 | 1 | SYNCHRONOUS | 667MHz | 20ns | DRAM | Parallel | 64MX16 | 16 | 15ns | 1073741824 bit | 1.2mm | 13mm | 9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24CS08-XHM-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | Gold | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2005 | e4 | yes | 活跃 | 3 (168 Hours) | 8 | 1.7V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | AT24CS08 | 5.5V | 1.7V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 5ms | 100 | HARDWARE | 1010DMMR | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93C56CT-E/ST | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 93C56C | 8 | 5V | 5V | Serial | 2Kb 256 x 8 128 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 16 | 2ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 2ms | 200 | SOFTWARE | 8 | 1.2mm | 4.4mm | 3mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S34ML02G200BHI000 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 63-VFBGA | 63 | Non-Volatile | -40°C~85°C TA | Tray | 2015 | ML-2 | Discontinued | 3 (168 Hours) | 63 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 未说明 | 1 | 3.3V | 0.8mm | 未说明 | 不合格 | 3V | 3.6V | 2.7V | 2Gb 256M x 8 | 30mA | FLASH | Parallel | 256MX8 | 8 | 25ns | 29b | 2 Gb | 0.00005A | 25 ns | Asynchronous | 8b | 3V | NO | NO | YES | 2K | 128K | 2kB | YES | 1mm | 11mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C0852V-133BBC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 172-LFBGA | 172 | Volatile | 0°C~70°C TA | Tray | 2003 | e0 | no | Obsolete | 3 (168 Hours) | 172 | Tin/Lead (Sn/Pb) | 流水线结构 | 3.135V~3.465V | BOTTOM | 220 | 1 | 3.3V | 1mm | CY7C0852 | 172 | 3.3V | 3.465V | 3.135V | 4.5Mb 128K x 36 | 2 | 300mA | 133MHz | 4.4 ns | SRAM | Parallel | 3-STATE | 36 | 34b | 4 Mb | 0.075A | COMMON | Synchronous | 36b | 3.14V | 15mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 25AA160B-I/P | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1.8V~5.5V | DUAL | 1 | 2.5V | 2.54mm | 25AA160B | 8 | 5.5V | 2/5V | SPI, Serial | 16Kb 2K x 8 | 6mA | 10MHz | 160 ns | EEPROM | SPI | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 3.3mm | 9.27mm | 6.35mm | 无 | 无SVHC | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | N25Q032A13EF440E | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 表面贴装 | 8-UDFN | YES | 8 | Non-Volatile | -40°C~85°C TA | Tray | 2013 | yes | Obsolete | 3 (168 Hours) | 8 | 3A991.B.1.A | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 30 | N25Q032A13 | 8 | 3/3.3V | 2.7V | SPI, Serial | 32Mb 8M x 4 | 20mA | 108MHz | 7 ns | FLASH | SPI | 32MX1 | 1 | 8ms, 5ms | 22b | 32 Mb | 0.0001A | Synchronous | 8b | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 256B | 0.6mm | 4mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC56AX-E/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~125°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC56A | 8 | 5.5V | 3/5V | 2.5V | Serial | 2Kb 256 x 8 | 2mA | 2MHz | 250 ns | EEPROM | SPI | 8 | 6ms | 2 kb | 0.000005A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PC28F128J3D75A | Micron Technology Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 64-TBGA | YES | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2007 | StrataFlash™ | Obsolete | 3 (168 Hours) | 64 | 2.7V~3.6V | BOTTOM | 1mm | unknown | 28F128J3 | 不合格 | 3/3.3V | 2.7V | 128Mb 16M x 8 8M x 16 | 0.054mA | FLASH | Parallel | 8MX16 | 16 | 75ns | 128 Mb | 0.00012A | 75 ns | Asynchronous | 8 | NO | NO | YES | 128 | 128K | 4/8words | YES | YES | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27C64A-10F1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 28-CDIP (0.600, 15.24mm) Window | 28 | Non-Volatile | 0°C~70°C TA | Tube | e3 | Obsolete | 1 (Unlimited) | 28 | 通孔 | EAR99 | Matte Tin (Sn) | 8542.32.00.61 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 100GHz | M27C64 | 28 | 5V | 5V | 64Kb 8K x 8 | 30mA | 30mA | 100ns | EPROM | Parallel | 8KX8 | 3-STATE | 8 | 64 kb | 0.0001A | COMMON | 5.97mm | 36.92mm | 15.24mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BQ4013YMA-85 | NA | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Tin | 通孔 | 通孔 | 32-DIP Module (0.61, 15.49mm) | 32 | Non-Volatile | 0°C~70°C TA | Tube | no | Obsolete | 1 (Unlimited) | 32 | EAR99 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | unknown | 85GHz | 未说明 | BQ4013 | 不合格 | 5V | 5V | 1Mb 128K x 8 | 50mA | 50mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 128KX8 | 8 | 85ns | 1 Mb | 0.004A | 85 ns | 8b | 9.53mm | 42.8mm | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | MT29F2G08AADWP:D | Micron | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE | 256000000 | PLASTIC/EPOXY | TSSOP48,.8,20 | 30 | 20 ns | 70 °C | 有 | MT29F2G08AADWP:D | 268435456 words | 3.3 V | TSOP1 | RECTANGULAR | Micron Technology Inc | Obsolete | MICRON TECHNOLOGY INC | 5.8 | TSOP1 | YES | 48 | TSOP1, TSSOP48,.8,20 | e3 | SLC NAND类型 | Matte Tin (Sn) | 闪存 | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.5 mm | unknown | 48 | R-PDSO-G48 | 不合格 | 3.6 V | 3/3.3 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 0.035 mA | 256MX8 | 1.2 mm | 8 | 0.00005 A | 2147483648 bit | PARALLEL | FLASH | 3.3 V | NO | NO | YES | 2K | 128K | 2K words | YES | 18.4 mm | 12 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24C08C-MAHM-E | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-UFDFN Exposed Pad | YES | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1997 | e4 | 活跃 | 3 (168 Hours) | 8 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.51 | 1.7V~5.5V | DUAL | 260 | 1 | 2.5V | 0.5mm | 40 | AT24C08 | R-PDSO-N8 | 5.5V | 1.7V | 8Kb 1K x 8 | SYNCHRONOUS | 1MHz | 550ns | EEPROM | I2C | 1KX8 | 8 | 5ms | 8192 bit | SERIAL | I2C | 5ms | 0.6mm | 3mm | 2mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF040-70-4I-WHE-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Tin | 表面贴装 | 32-TFSOP (0.488, 12.40mm Width) | YES | 32 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2000 | SST39 MPF™ | e3 | yes | 活跃 | 3 (168 Hours) | 32 | 3A991.B.1.A | 2.7V~3.6V | DUAL | 260 | 0.5mm | 40 | SST39VF040 | 不合格 | 3.3V | 4Mb 512K x 8 | 0.03mA | 70ns | FLASH | Parallel | 8b | 512KX8 | 8 | 20μs | 19b | 1 Mb | 0.000015A | YES | YES | YES | 128 | 4K | ROHS3 Compliant |