类别是'存储器'
存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 终端数量 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 界面 | 内存大小 | 工作电源电流 | 端口的数量 | 电源电流 | 操作模式 | 时钟频率 | 电源电流-最大值 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 最高频率 | 筛选水平 | 访问时间（最大） | 并行/串行 | 输入电容 | I/O类型 | 同步/异步 | 字长 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 待机电压-最小值 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 页面尺寸 | 准备就绪/忙碌 | 引导模块 | 环境温度范围高 | 刷新周期 | 通用闪存接口 | I2C控制字节 | 顺序突发长度 | 交错突发长度 | 反向引脚排列 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||
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 | IS43TR16640A-125JBLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 96-TFBGA | YES | 96 | Volatile | -40°C~95°C TC | Tray | Discontinued | 3 (168 Hours) | 96 | EAR99 | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 8542.32.00.32 | 1.425V~1.575V | BOTTOM | 1 | 1.5V | 0.8mm | 96 | 不合格 | 1.5V | 1.575V | 1.425V | 1Gb 64M x 16 | 1 | 210mA | SYNCHRONOUS | 800MHz | 20ns | DRAM | Parallel | 16b | 64MX16 | 3-STATE | 16 | 15ns | 16b | 1 Gb | 0.015A | COMMON | 8192 | 48 | 48 | 1.2mm | 13mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M27C2001-12F1 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 32-CDIP (0.600, 15.24mm) Window | 32 | Non-Volatile | 0°C~70°C TA | Tube | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 245 | 1 | 5V | 2.54mm | M27C2001 | 32 | 5V | 5V | 2Mb 256K x 8 | 30mA | 50mA | 120ns | EPROM | Parallel | 256KX8 | 3-STATE | 2 Mb | 0.0001A | 6pF | COMMON | 4.5mm | 42.04mm | 13.36mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W971GG6SB-25 | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 84-TFBGA | 84 | Volatile | 0°C~85°C TC | Tray | 2011 | 活跃 | 3 (168 Hours) | 84 | AUTO/SELF REFRESH | 1.7V~1.9V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | 1.8V | 1.9V | 1.7V | 1Gb 64M x 16 | 1 | SYNCHRONOUS | 200MHz | 400ps | DRAM | Parallel | 16b | 64MX16 | 16 | 15ns | 13b | 8 Gb | 1.2mm | 12.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT21CS11-SSH10-B | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Non-Volatile | -40°C~85°C TC | Tube | 活跃 | 3 (168 Hours) | 8 | 2.7V~4.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | AT21CS11 | R-PDSO-G8 | 4.5V | 2.7V | 1Kb 128 x 8 | SYNCHRONOUS | 125kHz | EEPROM | I2C, Single Wire | 128X8 | 8 | 5ms | 1024 bit | SERIAL | 1-WIRE | 5ms | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 25LC160C-I/MS | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 260 | 1 | 5V | 0.65mm | 40 | 25LC160C | 8 | 5V | SPI, Serial | 16Kb 2K x 8 | 5mA | 10MHz | 100 ns | EEPROM | SPI | 8 | 5ms | 16 kb | 0.000001A | SPI | 1000000 Write/Erase Cycles | 5ms | 200 | HARDWARE/SOFTWARE | 1.1mm | 3mm | 3mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
.png) | 24LC01B-I/STG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 128 | PLASTIC/EPOXY | TSSOP8,.25 | -40 °C | 40 | 85 °C | 有 | 24LC01B-I/STG | 0.4 MHz | 128 words | TSSOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.17 | SOIC | YES | 8 | TSSOP, TSSOP8,.25 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 3/5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 0.003 mA | 128X8 | 1.2 mm | 8 | 0.000005 A | 1024 bit | SERIAL | EEPROM | I2C | 1000000 Write/Erase Cycles | 5 ms | 200 | HARDWARE | 1010XXXR | NO | 3 mm | 4.4 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS62WV25616EBLL-45TLI | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Industrial grade | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | YES | 44 | Volatile | -40°C~85°C TA | Tray | e3 | 活跃 | 3 (168 Hours) | 44 | Matte Tin (Sn) | 8542.32.00.41 | 2.2V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 10 | 3.6V | 2.2V | 4Mb 256K x 16 | SRAM | Parallel | 256KX16 | 16 | 45ns | 4194304 bit | 45 ns | 1.2mm | 18.41mm | 10.16mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL128N10TFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 56-TFSOP (0.724, 18.40mm Width) | 56 | Non-Volatile | -40°C~85°C TA | Tray | GL-N | e3 | 活跃 | 3 (168 Hours) | 56 | Matte Tin (Sn) | 8542.32.00.51 | 2.7V~3.6V | DUAL | 1 | 3V | 0.5mm | 3.6V | 2.7V | 128Mb 16M x 8 8M x 16 | 90mA | FLASH | Parallel | 8MX16 | 16 | 100ns | 128 Mb | 100 ns | Asynchronous | 3V | 8 | 1.2mm | 18.4mm | 14mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W949D6DBHX5E | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 60-TFBGA | YES | Volatile | -25°C~85°C TC | Tray | 2016 | 活跃 | 3 (168 Hours) | 60 | EAR99 | AUTO/SELF REFRESH | 1.7V~1.95V | BOTTOM | 未说明 | 1 | 1.8V | 0.8mm | 未说明 | R-PBGA-B60 | 1.95V | 1.7V | 512Mb 32M x 16 | 1 | SYNCHRONOUS | 200MHz | 5ns | DRAM | Parallel | 32MX16 | 16 | 15ns | 536870912 bit | 1.025mm | 9mm | 8mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1021DV33-10VXIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 44-BSOJ (0.400, 10.16mm Width) | 44 | Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1996 | e4 | yes | 活跃 | 3 (168 Hours) | 44 | Nickel/Palladium/Gold (Ni/Pd/Au) | 3V~3.6V | DUAL | 260 | 1 | 3.3V | 30 | CY7C1021 | 44 | 3.3V | 3.63V | 3V | 1Mb 64K x 16 | 1 | 60mA | SRAM | Parallel | 3-STATE | 16 | 10ns | 16b | 1 Mb | 0.003A | 100MHz | COMMON | Asynchronous | 16b | 2V | 3.7592mm | 28.575mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 93LC66CX-I/SN | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 2.5V~5.5V | DUAL | 260 | 1 | 3V | 1.27mm | 40 | 93LC66C | 8 | 5.5V | 3/5V | 2.5V | Serial | 4Kb 512 x 8 256 x 16 | 2mA | 3MHz | 200 ns | EEPROM | SPI | 256X16 | 16 | 6ms | 4 kb | 0.000001A | MICROWIRE | 1000000 Write/Erase Cycles | 6ms | 200 | SOFTWARE | 8 | 1.75mm | 4.9mm | 3.9mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 93LC46B-I/STG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 1 | 64 | PLASTIC/EPOXY | TSSOP8,.25 | -40 °C | 40 | 85 °C | 有 | 93LC46B-I/STG | 2 MHz | 64 words | 3 V | TSSOP | RECTANGULAR | Microchip Technology Inc | 不推荐 | MICROCHIP TECHNOLOGY INC | 5.04 | SOIC | YES | 8 | TSSOP, TSSOP8,.25 | e3 | 有 | EAR99 | Matte Tin (Sn) | 8542.32.00.51 | EEPROMs | CMOS | DUAL | 鸥翼 | 260 | 1 | 0.65 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | 3/5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 0.002 mA | 64X16 | 1.2 mm | 16 | 0.000001 A | 1024 bit | SERIAL | EEPROM | MICROWIRE | 1000000 Write/Erase Cycles | 6 ms | 200 | SOFTWARE | 4.4 mm | 3 mm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BR24G1MFJ-3AGTE2 | ROHM Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Industrial grade | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 1999 | 活跃 | 1 (Unlimited) | 8 | SEATED HT-CALCULATED | 1.7V~5.5V | DUAL | 未说明 | 1 | 1.27mm | 未说明 | BR24G1M | 5.5V | 1.7V | 2-Wire, I2C, Serial | 1Mb 128K x 8 | SYNCHRONOUS | 1MHz | 450 ns | EEPROM | I2C | 8 | 5ms | 1 Mb | I2C | 5ms | 1.65mm | 4.9mm | 3.9mm | Unknown | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | W25Q64JVSFIQ | Winbond Electronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Non-Volatile | -40°C~85°C TA | Tube | 2016 | SpiFlash® | 活跃 | 3 (168 Hours) | 16 | 3A991.B.1.A | 8542.32.00.51 | 2.7V~3.6V | DUAL | 未说明 | 1 | 3V | 1.27mm | 未说明 | R-PDSO-G16 | 3.6V | 2.7V | SPI, Serial | 64Mb 8M x 8 | SYNCHRONOUS | 133MHz | FLASH | SPI - Quad I/O | 64MX1 | 1 | 3ms | 67108864 bit | 2.7V | 2.64mm | 10.31mm | 7.49mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IS42S32400F-7TL | ISSI, Integrated Silicon Solution Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Commercial grade | 表面贴装 | 表面贴装 | 86-TFSOP (0.400, 10.16mm Width) | 86 | Volatile | 0°C~70°C TA | Tray | e3 | 活跃 | 3 (168 Hours) | 86 | EAR99 | Matte Tin (Sn) - annealed | AUTO/SELF REFRESH | 8542.32.00.02 | 3V~3.6V | DUAL | 1 | 3.3V | 0.5mm | 86 | 3.3V | 3.6V | 3V | 128Mb 4M x 32 | 1 | 100mA | 143MHz | 5.4ns | DRAM | Parallel | 32b | 4MX32 | 3-STATE | 14b | 128 Mb | 0.002A | COMMON | 4096 | 1.05mm | 22.42mm | 10.29mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AT24CS08-STUM-T | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2 Weeks | 表面贴装 | 表面贴装 | SOT-23-5 Thin, TSOT-23-5 | 5 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 1.7V~5.5V | DUAL | 1 | 5V | AT24CS08 | R-PDSO-G8 | 1.7V | 2-Wire, I2C, Serial | 8Kb 1K x 8 | 3mA | 1MHz | 550ns | EEPROM | I2C | 1KX8 | 8 | 5ms | 8 kb | 0.000001A | I2C | 1000000 Write/Erase Cycles | 100 | HARDWARE | 1010DMMR | 1mm | 2.9mm | 1.6mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY7C1565KV18-450BZXC | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 165-LBGA | 165 | Volatile | 0°C~70°C TA | Tray | 2003 | e1 | 活跃 | 3 (168 Hours) | 165 | Tin/Silver/Copper (Sn/Ag/Cu) | 流水线结构 | 1.7V~1.9V | BOTTOM | 260 | 1 | 1.8V | 1mm | 30 | CY7C1565 | 165 | 1.8V | 1.9V | 1.7V | 72Mb 2M x 36 | 2 | 1.1A | 450MHz | 450 ps | SRAM | Parallel | 3-STATE | 36 | 19b | 72 Mb | 0.34A | SEPARATE | Synchronous | 36b | 1.7V | 1.4mm | 15mm | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY62256VNLL-70SNXI | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Volatile | -40°C~85°C TA | Tube | 2002 | MoBL® | e4 | yes | Obsolete | 3 (168 Hours) | 28 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 1MHz | 30 | CY62256 | 28 | 3V | 3.6V | 2.7V | 256Kb 32K x 8 | 1 | 30mA | SRAM | Parallel | 32KX8 | 3-STATE | 70ns | 15b | 256 kb | 0.000006A | 70 ns | COMMON | Asynchronous | 8b | 2.794mm | 18.03mm | 7.62mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | M24C32-WBN6P | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Automotive grade | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Non-Volatile | -40°C~85°C TA | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | Matte Tin (Sn) - annealed | 2.5V~5.5V | DUAL | 1 | 5V | 2.54mm | M24C32 | 8 | 5.5V | 3/5V | 2.5V | 2-Wire, I2C, Serial | 32Kb 4K x 8 | 5mA | 1MHz | 450ns | EEPROM | I2C | 5ms | 32 kb | 0.000002A | AEC-Q100 | I2C | 1000000 Write/Erase Cycles | 5ms | 40 | HARDWARE | 1010DDDR | 3.3mm | 9.27mm | 6.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | SST39VF3202C-70-4I-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 表面贴装 | 48-TFBGA | 48 | Non-Volatile | -40°C~85°C TA | Tray | 2010 | SST39 MPF™ | e1 | yes | 活跃 | 1 (Unlimited) | 48 | Tin/Silver/Copper (Sn/Ag/Cu) | TOP BOOT-BLOCK | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST39VF3202C | 48 | 3.3V | 3.6V | 2.7V | 32Mb 2M x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 2MX16 | 16 | 10μs | 21b | 32 Mb | 0.00005A | Asynchronous | 16b | 2.7V | YES | YES | YES | 863 | 4K32K | YES | TOP | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SST39VF3201B-70-4C-B3KE | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 48-TFBGA | YES | 48 | Non-Volatile | 0°C~70°C TA | Tray | 2000 | SST39 MPF™ | e1 | yes | 活跃 | 3 (168 Hours) | 48 | 3A991.B.1.A | Tin/Silver/Copper (Sn/Ag/Cu) | 底部启动区块 | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 0.8mm | 40 | SST39VF3201B | 48 | 3.3V | 3.6V | 2.7V | 32Mb 2M x 16 | 15mA | 70ns | FLASH | Parallel | 16b | 2MX16 | 16 | 10μs | 21b | 32 Mb | 0.00002A | Asynchronous | 16b | 2.7V | YES | YES | YES | 1K | 2K | BOTTOM | YES | 1.2mm | 8mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S25FL116K0XMFI043 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Non-Volatile | -40°C~85°C TA | Cut Tape (CT) | 2007 | FL1-K | e3 | Obsolete | 3 (168 Hours) | 8 | ALSO CONFIGURABLE AS 16M X 1 | 2.7V~3.6V | DUAL | 1 | 3V | 1.27mm | 3.6V | 3/3.3V | 2.7V | SPI | 16Mb 2M x 8 | 108MHz | 0.025mA | 7 ns | FLASH | SPI - Quad I/O | 4MX4 | 4 | 3ms | 24b | 16 Mb | 0.000005A | SERIAL | 3V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 2 | 256B | 105°C | 2.16mm | 4.9mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 24LC21AT-I/SNG | Microchip | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 小概要 | 1 | 128 | PLASTIC/EPOXY | -40 °C | 40 | 85 °C | 有 | 24LC21AT-I/SNG | 0.4 MHz | 128 words | 3 V | SOP | RECTANGULAR | Microchip Technology Inc | 活跃 | MICROCHIP TECHNOLOGY INC | 5.19 | SOIC | YES | 8 | 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8 | e3 | 有 | EAR99 | Matte Tin (Sn) | 2-WIRE SERIAL INTERFACE | 8542.32.00.51 | CMOS | DUAL | 鸥翼 | 260 | 1 | 1.27 mm | compliant | 8 | R-PDSO-G8 | 不合格 | 5.5 V | INDUSTRIAL | 2.5 V | SYNCHRONOUS | 128X8 | 1.75 mm | 8 | 1024 bit | SERIAL | EEPROM | I2C | 10 ms | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CY14B101LA-ZS45XIT | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | Gold, Tin | 表面贴装 | 表面贴装 | 44-TSOP (0.400, 10.16mm Width) | 44 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2009 | e4 | 活跃 | 3 (168 Hours) | 44 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 8542.32.00.41 | 2.7V~3.6V | DUAL | 260 | 1 | 3V | 0.8mm | 30 | CY14B101 | 44 | 不合格 | 3V | 3.6V | 2.7V | 1Mb 128K x 8 | 52mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 128KX8 | 8 | 45ns | 1 Mb | 0.005A | 45 ns | 8b | 1.194mm | 18.415mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | S29GL064N90FFI010 | Cypress Semiconductor Corp | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Copper, Silver, Tin | 表面贴装 | 表面贴装 | 64-LBGA | 64 | Non-Volatile | -40°C~85°C TA | Tray | 2008 | GL-N | e1 | 活跃 | 3 (168 Hours) | 64 | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | 8542.32.00.51 | 2.7V~3.6V | BOTTOM | 260 | 1 | 3V | 1mm | 40 | 3.6V | 3/3.3V | 2.7V | 64Mb 8M x 8 4M x 16 | 50mA | FLASH | Parallel | 16b | 4MX16 | 16 | 90ns | 64 Mb | 0.000005A | 90 ns | Asynchronous | 3V | 8 | YES | YES | YES | 128 | 64K | 8/16words | YES | BOTTOM/TOP | YES | 1.4mm | 13mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 |