类别是'逻辑 - FIFO 存储器'
逻辑 - FIFO 存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 终端数量 | Date Of Intro | 操作温度 | 包装 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 功能 | 最大电流源 | 资历状况 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 内存大小 | 操作模式 | 电源电流-最大值 | 访问时间 | 数据率 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 筛选水平 | 并行/串行 | 内存IC类型 | 总线定向 | 重传能力 | FWFT支持 | 可编程标志支持 | 输出启用 | 扩展类型 | 周期 | 长度 | 宽度 | RoHS状态 | |||||||||||||||||||||||
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 | IDT7200L65J | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | PLASTIC, LCC-32 | 65 ns | 12.5 MHz | 1 | 256 words | 256 | 70 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 5 V | YES | 32 | 无 | e0 | EAR99 | 锡铅 | RETRANSMIT | 8542.32.00.71 | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 20 | 32 | R-PQCC-J32 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.08 mA | 256X9 | 3-STATE | 9 | 0.0005 A | 2304 bit | PARALLEL | 其他先进先出 | NO | 80 ns | ||||||||||||||||||||||||||||||||||||||
.png) | IDT7206L30DB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Transferred | INTEGRATED DEVICE TECHNOLOGY INC | DIP | DIP, DIP28,.6 | 30 ns | 25 MHz | 16384 words | 16000 | 125 °C | -55 °C | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | 5 V | NO | 28 | 1988-01-01 | 无 | e0 | 无 | EAR99 | 锡铅 | RETRANSMIT | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-GDIP-T28 | 不合格 | 5.5 V | MILITARY | 4.5 V | ASYNCHRONOUS | 0.15 mA | 16KX9 | 3-STATE | 5.08 mm | 9 | 0.012 A | 147456 bit | MIL-STD-883 Class B | PARALLEL | 其他先进先出 | NO | 40 ns | 37.1475 mm | 7.62 mm | ||||||||||||||||||||||||||||||||||
 | IDT72245LB35PF | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | QFP | 14 X 14 MM, 1.40 MM HEIGHT, TQFP-64 | 20 ns | 28.6 MHz | 3 | 4096 words | 4000 | 70 °C | PLASTIC/EPOXY | LQFP | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | 5 V | YES | 64 | 无 | e0 | EAR99 | 锡铅 | 8542.32.00.71 | QUAD | 鸥翼 | 240 | 1 | 0.8 mm | not_compliant | 30 | 64 | S-PQFP-G64 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.06 mA | 4KX18 | 3-STATE | 1.6 mm | 18 | 0.005 A | 73728 bit | PARALLEL | 其他先进先出 | YES | 35 ns | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||
| IDT72211L20L | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | QFJ | LCC-32 | 12 ns | 50 MHz | 512 words | 512 | 70 °C | CERAMIC, METAL-SEALED COFIRED | QCCN | LCC32,.45X.55 | RECTANGULAR | CHIP CARRIER | 5 V | YES | 32 | 无 | e0 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.71 | QUAD | 无铅 | 1 | 1.27 mm | not_compliant | 32 | R-CQCC-N32 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.08 mA | 512X9 | 3-STATE | 3.048 mm | 9 | 4608 bit | PARALLEL | 其他先进先出 | YES | 20 ns | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||||||||||||||
 | MS8104166A-20TB | OKI Electric Industry Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | OKI ELECTRIC INDUSTRY CO LTD | QFP | TFQFP, | 18 ns | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TFQFP | SQUARE | FLATPACK, THIN PROFILE, FINE PITCH | 5 V | YES | 100 | Transferred | EAR99 | 8542.32.00.71 | QUAD | 鸥翼 | 1 | 0.5 mm | unknown | 100 | S-PQFP-G100 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 256KX8 | 1.2 mm | 8 | 2097152 bit | PARALLEL | YES | 20 ns | 14 mm | 14 mm | ||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72271L10PF | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | QFP | TQFP-64 | 8 ns | 100 MHz | 3 | 32768 words | 32000 | 70 °C | PLASTIC/EPOXY | LQFP | QFP64,.66SQ,32 | SQUARE | FLATPACK, LOW PROFILE | 5 V | YES | 64 | 无 | e0 | EAR99 | 锡铅 | RETRANSMIT; AUTO POWER-DOWN | 8542.32.00.71 | QUAD | 鸥翼 | 240 | 1 | 0.8 mm | not_compliant | 30 | 64 | S-PQFP-G64 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.15 mA | 32KX9 | 3-STATE | 1.6 mm | 9 | 0.015 A | 294912 bit | PARALLEL | 其他先进先出 | YES | 10 ns | 14 mm | 14 mm | |||||||||||||||||||||||||||||||||||
| IDT7M204S65CB | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 65 ns | 12 MHz | 4096 words | 4000 | 125 °C | -55 °C | CERAMIC | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | 5 V | NO | 28 | 无 | e0 | 无 | EAR99 | 锡铅 | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | R-XDIP-T28 | 不合格 | MILITARY | ASYNCHRONOUS | 0.23 mA | 4KX9 | 9 | 36864 bit | MIL-STD-883 Class B (Modified) | PARALLEL | 其他先进先出 | NO | 85 ns | ||||||||||||||||||||||||||||||||||||||||||||||
 | IDT7201SA35D | Integrated Device Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | DIP | 0.600 INCH, CERDIP-28 | 35 ns | 512 words | 512 | 70 °C | CERAMIC, GLASS-SEALED | DIP | DIP28,.6 | RECTANGULAR | IN-LINE | 5 V | NO | 28 | 无 | e0 | 无 | EAR99 | 锡铅 | RETRANSMIT | 8542.32.00.71 | DUAL | THROUGH-HOLE | 1 | 2.54 mm | not_compliant | 28 | R-GDIP-T28 | 不合格 | 5.5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 512X9 | 3-STATE | 9 | 4608 bit | PARALLEL | 其他先进先出 | NO | 45 ns | ||||||||||||||||||||||||||||||||||||||||||
 | 72V03L15JG | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 32-LCC (J-Lead) | Commercial grade | 0°C~70°C | Tube | 72V | 活跃 | 3 (168 Hours) | 3V~3.6V | 72V03 | Asynchronous | 60mA | 18K 2K x 9 | 15ns | 40MHz | Uni-Directional | 有 | 无 | Depth, Width | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT7200L35J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHIP CARRIER | 1 | 256 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 35 ns | 70 °C | 无 | IDT7200L35J8 | 22.2 MHz | 256 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.39 | QFJ | YES | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 256X9 | 3-STATE | 3.55 mm | 9 | 0.0005 A | 2304 bit | PARALLEL | 其他先进先出 | NO | 45 ns | 13.97 mm | 11.43 mm | ||||||||||||||||||||||||||||
| IDT72V36100L10PF | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | FLATPACK, LOW PROFILE, FINE PITCH | 3 | 64000 | PLASTIC/EPOXY | QFP128,.63X.87,20 | 20 | 6.5 ns | 70 °C | 无 | IDT72V36100L10PF | 100 MHz | 65536 words | 3.3 V | LFQFP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 8.23 | QFP | YES | 128 | PLASTIC, TQFP-128 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT; AUTO POWER DOWN; ASYNCHRONOUS MODE IS ALSO POSSIBLE | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 240 | 1 | 0.5 mm | not_compliant | 128 | R-PQFP-G128 | 不合格 | 3.45 V | 3.3 V | COMMERCIAL | 3.15 V | SYNCHRONOUS | 0.06 mA | 64KX36 | 1.6 mm | 36 | 0.015 A | 2359296 bit | PARALLEL | 其他先进先出 | YES | 10 ns | 20 mm | 14 mm | |||||||||||||||||||||||||||||
| IDT72V2105L10PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72231L10J | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHIP CARRIER | 1 | 2000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 6.5 ns | 70 °C | 无 | IDT72231L10J | 100 MHz | 2048 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.3 | QFJ | YES | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.035 mA | 2KX9 | 3-STATE | 3.556 mm | 9 | 0.005 A | 18432 bit | PARALLEL | 其他先进先出 | YES | 10 ns | 13.9954 mm | 11.4554 mm | |||||||||||||||||||||||||||||
| IDT7201LA12P | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | IN-LINE | 1 | 512 | PLASTIC/EPOXY | DIP28,.6 | 20 | 12 ns | 70 °C | 无 | IDT7201LA12P | 50 MHz | 512 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.23 | DIP | NO | 28 | 0.600 INCH, PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 512X9 | 3-STATE | 4.699 mm | 9 | 0.0005 A | 4608 bit | PARALLEL | 其他先进先出 | NO | 20 ns | 36.576 mm | 15.24 mm | ||||||||||||||||||||||||||||
| 723643L12PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 128-LQFP | 128-TQFP (14x20) | 0°C ~ 70°C | Tray | 7200 | 活跃 | 4.5V ~ 5.5V | Synchronous | 400mA | 36K (1K x 36) | 8ns | 83MHz | Bi-Directional | 无 | 有 | 有 | Depth, Width | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 723643L12PFG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 128-LQFP | 128-TQFP (14x20) | 0°C ~ 70°C | Tape & Reel (TR) | 7200 | 活跃 | 4.5V ~ 5.5V | Synchronous | 400mA | 36K (1K x 36) | 8ns | 83MHz | Bi-Directional | 无 | 有 | 有 | Depth, Width | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72231L10JG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHIP CARRIER | 1 | 2000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 30 | 6.5 ns | 70 °C | 有 | IDT72231L10JG | 100 MHz | 2048 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.31 | QFJ | YES | 32 | QCCJ, LDCC32,.5X.6 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.035 mA | 2KX9 | 3-STATE | 3.5 mm | 9 | 0.005 A | 18432 bit | PARALLEL | 其他先进先出 | YES | 10 ns | 13.97 mm | 11.43 mm | |||||||||||||||||||||||||||||
| IDT72841L10PFG | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | FLATPACK, LOW PROFILE | 3 | 4000 | PLASTIC/EPOXY | QFP64,.66SQ,32 | 30 | 6.5 ns | 70 °C | 有 | IDT72841L10PFG | 100 MHz | 4096 words | 5 V | LQFP | SQUARE | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.25 | QFP | YES | 64 | LQFP, QFP64,.66SQ,32 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.71 | FIFOs | CMOS | QUAD | 鸥翼 | 260 | 1 | 0.8 mm | compliant | 64 | S-PQFP-G64 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.06 mA | 4KX9 | 1.6 mm | 9 | 0.01 A | 36864 bit | PARALLEL | 其他先进先出 | YES | 10 ns | 14 mm | 14 mm | ||||||||||||||||||||||||||||||
| IDT7200L12TP | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | IN-LINE | 256 | PLASTIC/EPOXY | DIP28,.3 | 30 | 12 ns | 70 °C | 无 | IDT7200L12TP | 50 MHz | 256 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.22 | DIP | NO | 28 | PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 225 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 256X9 | 3-STATE | 4.572 mm | 9 | 0.0005 A | 2304 bit | PARALLEL | 其他先进先出 | NO | 20 ns | 34.671 mm | 7.62 mm | |||||||||||||||||||||||||||||
| IDT72221L25J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHIP CARRIER | 1 | 1000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 15 ns | 70 °C | 无 | IDT72221L25J8 | 40 MHz | 1024 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.41 | QFJ | YES | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | SYNCHRONOUS | 0.08 mA | 1KX9 | 3-STATE | 3.556 mm | 9 | 0.08 A | 9216 bit | PARALLEL | 其他先进先出 | YES | 25 ns | 13.9954 mm | 11.4554 mm | |||||||||||||||||||||||||||||
| 72251L10JG8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 32-LCC (J-Lead) | 32-PLCC (14x11.46) | 0°C ~ 70°C | 7200 | 活跃 | 4.5V ~ 5.5V | Synchronous | 35mA | 72K (8K x 9) | 6.5ns | 100MHz | Uni-Directional | 无 | 无 | 有 | Depth, Width | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 72V3680L7-5PFGI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 128-LQFP | 128-TQFP (14x20) | -40°C ~ 85°C | Tray | 72V | 活跃 | 3.15V ~ 3.45V | Synchronous | 40mA | 576K (16K x 36) | 5ns | 133.3MHz | Uni-Directional | 有 | 有 | 有 | Depth, Width | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 72V3680L7-5PFGI8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 128-LQFP | 128-TQFP (14x20) | -40°C ~ 85°C | Tape & Reel (TR) | 72V | 活跃 | 3.15V ~ 3.45V | Synchronous | 40mA | 576K (16K x 36) | 5ns | 133.3MHz | Uni-Directional | 有 | 有 | 有 | Depth, Width | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT7208L25JI | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT7203L15J8 | Integrated Device Technology (IDT) | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | CHIP CARRIER | 1 | 2000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 15 ns | 70 °C | 无 | IDT7203L15J8 | 40 MHz | 2048 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.09 | QFJ | YES | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 2KX9 | 3-STATE | 3.556 mm | 9 | 0.002 A | 18432 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 13.9954 mm | 11.4554 mm |