类别是'逻辑 - FIFO 存储器'
逻辑 - FIFO 存储器 (6000)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | JESD-609代码 | 无铅代码 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 子类别 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 电源 | 温度等级 | 电源电压-最小值(Vsup) | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 并行/串行 | 内存IC类型 | 输出启用 | 周期 | 长度 | 宽度 | ||||||||||||||||||||||
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 | IDT7202LA20P | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | 1 | 1000 | PLASTIC/EPOXY | DIP28,.6 | 20 | 20 ns | 70 °C | 无 | IDT7202LA20P | 33.3 MHz | 1024 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5 | DIP | 28 | 0.600 INCH, PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 1KX9 | 3-STATE | 4.699 mm | 9 | 0.0005 A | 9216 bit | PARALLEL | 其他先进先出 | NO | 30 ns | 36.576 mm | 15.24 mm | ||
| IDT7202LA12TP | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | 1000 | PLASTIC/EPOXY | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.22 | DIP | 1024 words | 50 MHz | IDT7202LA12TP | 无 | 70 °C | 12 ns | 30 | DIP28,.3 | 28 | PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 225 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.125 mA | 1KX9 | 3-STATE | 4.572 mm | 9 | 0.0005 A | 9216 bit | PARALLEL | 其他先进先出 | NO | 20 ns | 34.671 mm | 7.62 mm | |||
| IDT7207L25P | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | 1 | 32000 | PLASTIC/EPOXY | DIP28,.6 | 20 | 25 ns | 70 °C | 无 | IDT7207L25P | 28.5 MHz | 32768 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 7.86 | DIP | 28 | PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 32KX9 | 3-STATE | 4.699 mm | 9 | 0.008 A | 294912 bit | PARALLEL | 其他先进先出 | NO | 35 ns | 36.576 mm | 15.24 mm | ||
| IDT7201LA15TPI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | 512 | PLASTIC/EPOXY | DIP28,.3 | -40 °C | 30 | 15 ns | 85 °C | 无 | IDT7201LA15TPI | 40 MHz | 512 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.04 | DIP | 28 | PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 225 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.08 mA | 512X9 | 4.572 mm | 9 | 0.005 A | 4608 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 34.671 mm | 7.62 mm | |||
| IDT7203L20P | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | 1 | 2000 | PLASTIC/EPOXY | DIP28,.6 | 20 | 20 ns | 70 °C | 无 | IDT7203L20P | 33.3 MHz | 2048 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.04 | DIP | 28 | PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 2KX9 | 3-STATE | 4.699 mm | 9 | 0.002 A | 18432 bit | PARALLEL | 其他先进先出 | NO | 30 ns | 36.576 mm | 15.24 mm | ||
| IDT7205L12J | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | CHIP CARRIER | 1 | 8000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 12 ns | 70 °C | 无 | IDT7205L12J | 50 MHz | 8192 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.32 | QFJ | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 8KX9 | 3.556 mm | 9 | 0.012 A | 73728 bit | PARALLEL | 其他先进先出 | NO | 20 ns | 13.9954 mm | 11.4554 mm | |||
| IDT7201LA15JI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | CHIP CARRIER | 1 | 512 | PLASTIC/EPOXY | LDCC32,.5X.6 | -40 °C | 20 | 15 ns | 85 °C | 无 | IDT7201LA15JI8 | 40 MHz | 512 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.22 | QFJ | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.08 mA | 512X9 | 3.55 mm | 9 | 0.005 A | 4608 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 13.97 mm | 11.43 mm | ||
| IDT72V01L15JG8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | CHIP CARRIER | 1 | 512 | PLASTIC/EPOXY | LDCC32,.5X.6 | 30 | 15 ns | 70 °C | 有 | IDT72V01L15JG8 | 40 MHz | 512 words | 3.3 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.59 | QFJ | 32 | QCCJ, LDCC32,.5X.6 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | 不合格 | 3.6 V | 3.3 V | COMMERCIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 512X9 | 3.55 mm | 9 | 0.005 A | 4608 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 13.97 mm | 11.43 mm | ||||
| IDT72V02L25JI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72235LB10PFG | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72V271LA15PFGI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72V215L20TF | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72205LB15TF | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT7207L35J | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72V3660L6BB | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT7206L15J | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72235LB15JI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72V02L25JGI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | CHIP CARRIER | 1 | 1000 | PLASTIC/EPOXY | LDCC32,.5X.6 | -40 °C | 30 | 25 ns | 85 °C | 有 | IDT72V02L25JGI | 28.5 MHz | 1024 words | 3.3 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | 活跃 | INTEGRATED DEVICE TECHNOLOGY INC | 5.39 | QFJ | 32 | QCCJ, LDCC32,.5X.6 | e3 | 有 | EAR99 | Matte Tin (Sn) - annealed | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 260 | 1 | 1.27 mm | compliant | 32 | R-PQCC-J32 | 不合格 | 3.6 V | 3.3 V | INDUSTRIAL | 3 V | ASYNCHRONOUS | 0.06 mA | 1KX9 | 3-STATE | 3.55 mm | 9 | 0.005 A | 9216 bit | PARALLEL | 其他先进先出 | NO | 35 ns | 13.97 mm | 11.43 mm | |
| IDT7204L12J8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | CHIP CARRIER | 1 | 4000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 12 ns | 70 °C | 无 | IDT7204L12J8 | 50 MHz | 4096 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.26 | QFJ | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 4KX9 | 3-STATE | 3.556 mm | 9 | 0.002 A | 36864 bit | PARALLEL | 其他先进先出 | NO | 20 ns | 13.9954 mm | 11.4554 mm | ||
| IDT7204L15JI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | CHIP CARRIER | 1 | 4000 | PLASTIC/EPOXY | LDCC32,.5X.6 | -40 °C | 20 | 15 ns | 85 °C | 无 | IDT7204L15JI8 | 40 MHz | 4096 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.09 | QFJ | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 4KX9 | 3.556 mm | 9 | 0.012 A | 36864 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 13.9954 mm | 11.4554 mm | ||
| IDT7204L15PI | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | NO | IN-LINE | 1 | 4000 | PLASTIC/EPOXY | DIP28,.6 | -40 °C | 20 | 15 ns | 85 °C | 无 | IDT7204L15PI | 40 MHz | 4096 words | 5 V | DIP | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.07 | DIP | 28 | PLASTIC, DIP-28 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | DUAL | THROUGH-HOLE | 240 | 1 | 2.54 mm | not_compliant | 28 | R-PDIP-T28 | 不合格 | 5.5 V | 5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 4KX9 | 4.699 mm | 9 | 0.012 A | 36864 bit | PARALLEL | 其他先进先出 | NO | 25 ns | 36.576 mm | 15.24 mm | ||
| IDT7203L35J8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | CHIP CARRIER | 1 | 2000 | PLASTIC/EPOXY | LDCC32,.5X.6 | 20 | 35 ns | 70 °C | 无 | IDT7203L35J8 | 22.2 MHz | 2048 words | 5 V | QCCJ | RECTANGULAR | Integrated Device Technology Inc | Obsolete | INTEGRATED DEVICE TECHNOLOGY INC | 5.11 | QFJ | 32 | PLASTIC, LCC-32 | e0 | 无 | EAR99 | Tin/Lead (Sn85Pb15) | RETRANSMIT | 8542.32.00.71 | FIFOs | CMOS | QUAD | J BEND | 225 | 1 | 1.27 mm | not_compliant | 32 | R-PQCC-J32 | 不合格 | 5.5 V | 5 V | COMMERCIAL | 4.5 V | ASYNCHRONOUS | 0.12 mA | 2KX9 | 3-STATE | 3.556 mm | 9 | 0.002 A | 18432 bit | PARALLEL | 其他先进先出 | NO | 45 ns | 13.9954 mm | 11.4554 mm | ||
| IDT7208L25JGI8 | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72V291L20TF | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IDT72225LB10TF | Integrated Device Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 |