类别是'晶体管 - FET，MOSFET - 射频'
晶体管 - FET，MOSFET - 射频 (5441)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 厂商 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 颜色 | 附加功能 | HTS代码 | 子类别 | 电压 - 额定直流 | 额定电流 | 最大功率耗散 | 技术 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作频率 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 输出功率 | 测试电流 | 晶体管应用 | 无卤素 | 漏源电压 (Vdss) | 极性/通道类型 | 产品类别 | 晶体管类型 | 工作温度范围 | 连续放电电流(ID) | 栅极至源极电压(Vgs) | 增益 | 最大输出功率 | 最大漏极电流 (Abs) (ID) | 漏源击穿电压 | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 信道型 | 功率 - 输出 | 场效应管技术 | 最大耗散功率(Abs) | 噪声图 | 栅源电压 | 电压-测试 | 反馈上限-最大值 (Crss) | 最高频段 | 最小击穿电压 | 功率增益 | 产品类别 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||||||||||||||||||||||
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 | MRF8S9200NR3 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 225°C | 70V | OM-780-2 | YES | SILICON | 1 | Tape & Reel (TR) | 2009 | e3 | 活跃 | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) | 防静电 | 8541.29.00.75 | DUAL | FLAT | 260 | 940MHz | 40 | R-CDFP-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | 1.4A | AMPLIFIER | N-CHANNEL | LDMOS | 19.9dB | 70V | 58W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MMBFJ310LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 25V | Military grade | ACTIVE (Last Updated: 1 day ago) | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.437803g | 1 | Tape & Reel (TR) | 2000 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 150°C | -55°C | 25V | 225mW | DUAL | 鸥翼 | 260 | 60mA | 40 | MMBFJ310 | 3 | Single | DEPLETION MODE | 225mW | 10mA | AMPLIFIER | 无卤素 | 25V | N-Channel JFET | 60mA | 25V | 12dB | JUNCTION | 10V | 2.5 pF | 超高频B型 | 940μm | 2.9mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BF998E6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Military grade | Tin | 表面贴装 | TO-253-4, TO-253AA | 4 | 1 | Tape & Reel (TR) | 2001 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 4 | EAR99 | 150°C | -55°C | 12V | 200mW | DUAL | 鸥翼 | 30mA | 45MHz | BF998 | 4 | SINGLE | 1 | DUAL GATE, DEPLETION MODE | SOURCE | 10mA | 不含卤素 | N-Channel | 30mA | 8V | 28dB | 0.03A | 1.2pF | METAL-OXIDE SEMICONDUCTOR | 2.8dB | 1mm | 2.9mm | 1.3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MMBFJ309LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1 | Military grade | ACTIVE (Last Updated: 1 day ago) | Tin | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.437803g | -25V | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | -25V | DUAL | 鸥翼 | 260 | 30mA | 40 | MMBFJ309 | 3 | Single | DEPLETION MODE | 225mW | AMPLIFIER | 无卤素 | 25V | N-Channel JFET | 10mA | 25V | 5pF | JUNCTION | 超高频B型 | 1.016mm | 3.0226mm | 1.397mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MMBF5484 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | -25V | ACTIVE (Last Updated: 3 days ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | 1 | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 8541.21.00.95 | 25V | 225mW | DUAL | 鸥翼 | 10mA | 400MHz | MBF5484 | Single | DEPLETION MODE | 225mW | 225mW | AMPLIFIER | N-Channel JFET | 5mA | -25V | JUNCTION | 4dB | 15V | 1 pF | 25V | 930μm | 2.92mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PD55003L-E | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-PowerVDFN | 8 | 1 | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 5 | SMD/SMT | EAR99 | 哑光锡 | 150°C | -65°C | HIGH RELIABILITY | 12V | 14W | QUAD | 260 | 2.5A | 500MHz | 30 | PD55003 | 5 | S-PQCC-N5 | Single | 增强型MOSFET | SOURCE | 50mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 2.5A | 15V | 19dB | 3W | 40V | 34pF | METAL-OXIDE SEMICONDUCTOR | 5 V | 12.5V | 880μm | 5mm | 5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD54008L-E | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 8-PowerVDFN | 8 | 1 | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 5 | EAR99 | 哑光锡 | 150°C | -65°C | HIGH RELIABILITY | 3.1V | 26.7W | QUAD | 260 | 5A | 500MHz | 30 | PD54008 | 14 | S-PQCC-N5 | Single | 增强型MOSFET | 26.7W | SOURCE | 200mA | AMPLIFIER | 25V | N-CHANNEL | LDMOS | 5A | 15V | 8W | 5A | 25V | METAL-OXIDE SEMICONDUCTOR | 7.5V | 15dB | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2SK3557-6-TB-E | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | ACTIVE (Last Updated: 6 days ago) | Tin | TO-236-3, SC-59, SOT-23-3 | YES | 3 | 1.437803g | 1 | Tape & Reel (TR) | 2007 | e6 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 低噪音 | 8541.21.00.95 | 200mW | DUAL | 鸥翼 | 50mA | 1kHz | 2SK3557 | 3 | Single | DEPLETION MODE | 200mW | 1mA | AMPLIFIER | 15V | N-Channel JFET | 50mA | -15V | 0.05A | JUNCTION | 1dB | 5V | 1.1mm | 2.9mm | 1.5mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PD55003-E | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | PowerSO-10 Exposed Bottom Pad | 3 | 1 | Tube | e3 | 活跃 | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) - annealed | 165°C | -65°C | HIGH RELIABILITY | 40V | 31.7W | DUAL | 鸥翼 | 250 | 2.5A | 500MHz | 30 | PD55003 | 10 | R-PDSO-G2 | Single | 增强型MOSFET | 31.7W | SOURCE | 50mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 2.5A | 20V | 3W | 40V | METAL-OXIDE SEMICONDUCTOR | 12.5V | 17dB | 3.5mm | 7.5mm | 9.4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBF4416A | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 1 | ACTIVE (Last Updated: 1 week ago) | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | -35V | Tape & Reel (TR) | 2005 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 8541.21.00.95 | 35V | 225mW | DUAL | 鸥翼 | 10mA | 400MHz | MMBF4416A | Single | DEPLETION MODE | 225mW | 5mA | AMPLIFIER | N-Channel JFET | 15mA | -35V | JUNCTION | 4dB | 15V | 0.8 pF | 1.04mm | 2.9mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MMBF5485 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 42 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 30mg | 1 | Tape & Reel (TR) | 2008 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 150°C | -55°C | 8541.21.00.95 | 25V | 225mW | DUAL | 鸥翼 | 10mA | 400MHz | MMBF5485 | Single | DEPLETION MODE | 225mW | AMPLIFIER | 25V | N-Channel JFET | 10mA | -25V | METAL-OXIDE SEMICONDUCTOR | 4dB | 15V | 1 pF | 930μm | 2.92mm | 1.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PD55008TR-E | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | 表面贴装 | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 3 | 1 | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) - annealed | 165°C | -65°C | HIGH RELIABILITY | 52.8W | DUAL | 鸥翼 | 250 | 4A | 500MHz | 30 | PD55008 | 10 | R-PDSO-G2 | Single | 增强型MOSFET | 52.8W | SOURCE | 150mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 4A | 20V | 17dB | 8W | 4A | 40V | METAL-OXIDE SEMICONDUCTOR | 12.5V | 无 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BF999E6327HTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Military grade | Tin | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | 3 | 1 | Tape & Reel (TR) | 2007 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | 20V | 200mW | DUAL | 鸥翼 | 30mA | 45MHz | SINGLE | 1 | DEPLETION MODE | 10mA | 不含卤素 | N-Channel | 30mA | 12V | 27dB | METAL-OXIDE SEMICONDUCTOR | 2.1dB | 10V | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | VRF152GMP | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | VRF152 | 1 | Microchip | Microchip Technology / Atmel | 射频MOSFET晶体管 | 微芯片技术 | Bulk | - | MOSFETs | Si | 射频MOSFET晶体管 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SMMBFJ310LT1G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Tin | TO-236-3, SC-59, SOT-23-3 | YES | 3 | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | 150°C | -55°C | 60mA | MMBFJ310 | 3 | Single | 10mA | 无卤素 | N-Channel JFET | 25V | 12dB | JUNCTION | 0.225W | 10V | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD20010-E | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | 3 | 1 | Tube | 活跃 | 3 (168 Hours) | 2 | EAR99 | 165°C | -65°C | ESD PROTECTION, HIGH RELIABILITY | 59W | DUAL | 鸥翼 | 未说明 | 5A | 2GHz | 未说明 | PD20010 | 10 | R-PDSO-G2 | 不合格 | Single | 增强型MOSFET | 59W | SOURCE | 150mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 5A | 15V | 11dB | 15W | 5A | 40V | 10W | METAL-OXIDE SEMICONDUCTOR | 13.6V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MW6S004NT1 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 150°C | 68V | Military grade | PLD-1.5 | YES | SILICON | 1 | Tape & Reel (TR) | 2009 | e3 | 活跃 | 3 (168 Hours) | 4 | EAR99 | Matte Tin (Sn) | 8541.29.00.75 | QUAD | 无铅 | 260 | 1.96GHz | 40 | MW6S004 | R-PQSO-N4 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | 50mA | AMPLIFIER | N-CHANNEL | LDMOS | 18dB | 68V | 4W | METAL-OXIDE SEMICONDUCTOR | 28V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | MRF6V2010NR1 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 225°C | 110V | TO-270AA | YES | SILICON | 1 | Tape & Reel (TR) | 2006 | e3 | 活跃 | 3 (168 Hours) | 2 | EAR99 | Tin (Sn) | 8541.29.00.75 | DUAL | FLAT | 260 | not_compliant | 220MHz | 40 | MRF6V2010 | R-PDFM-F2 | 不合格 | SINGLE | 增强型MOSFET | SOURCE | 30mA | AMPLIFIER | N-CHANNEL | LDMOS | 23.9dB | 110V | 10W | METAL-OXIDE SEMICONDUCTOR | 50V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PD55008-E | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | Military grade | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | PowerSO-10 Exposed Bottom Pad | 3 | 1 | Tube | e3 | 活跃 | 3 (168 Hours) | 2 | EAR99 | Matte Tin (Sn) - annealed | 165°C | -65°C | HIGH RELIABILITY | 40V | 52.8W | DUAL | 鸥翼 | 250 | 4A | 500MHz | 30 | PD55008 | 10 | R-PDSO-G2 | Single | 增强型MOSFET | 52.8W | SOURCE | 150mA | AMPLIFIER | 40V | N-CHANNEL | LDMOS | 4A | 20V | 8W | 4A | 40V | 58pF | METAL-OXIDE SEMICONDUCTOR | 12.5V | 40V | 17dB | 3.5mm | 7.5mm | 9.4mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VRF151 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | N-Channel | 16 A | 180 V | - 65 C | + 150 C | 5 mS | 300 W | 1 | 40 V | 3.6 V | 0.566059 oz | 16 | Tube | VRF151 | 活跃 | 170 V | 法兰安装 | - | M174 | M174 | 微芯片技术 | Details | - | 射频功率MOSFET | 1mA | 175MHz | 175 MHz | N-Channel | 300 | 150 W | 250 mA | - 65 C to + 150 C | 22 dB | N | 150W | - | 50 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | PD84001 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | TO-243AA | 3 | 130.492855mg | 1 | Cut Tape (CT) | e3 | 活跃 | 3 (168 Hours) | 4 | EAR99 | Matte Tin (Sn) | 150°C | -65°C | 6W | DUAL | FLAT | 260 | 1.5A | 870MHz | 30 | PD84001 | 4 | R-PDSO-F4 | Single | 增强型MOSFET | 6W | SOURCE | 50mA | AMPLIFIER | 18V | N-CHANNEL | LDMOS | 1.5A | 15V | 1W | 30dBm | METAL-OXIDE SEMICONDUCTOR | 7.5V | 18V | 15dB | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VRF2944 | Microchip Technology | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | N-Channel | 50 A | 180 V | - 65 C | + 150 C | 10 mS | 795 W | 1 | 40 V | 3.6 V | 1.699193 oz | 50 | Bulk | 活跃 | 170 V | 法兰安装 | - | M177 | M177 | 微芯片技术 | Details | - | 射频功率MOSFET | 50A | 30MHz | 30 MHz | N-Channel | 795 | 400 W | 250 mA | - 65 C to + 150 C | 25 dB | 400W | - | 50 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | J310 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1 | LAST SHIPMENTS (Last Updated: 20 hours ago) | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | 201mg | -25V | Bulk | e0 | no | Obsolete | 1 (Unlimited) | 3 | 通孔 | Tin/Lead (Sn/Pb) | 150°C | -55°C | Orange | 8541.21.00.75 | 25V | 625mW | BOTTOM | 240 | not_compliant | 10mA | 100MHz | 30 | J310 | 3 | 不合格 | Single | DEPLETION MODE | 350mW | 10mA | AMPLIFIER | 25V | N-Channel JFET | 60mA | -25V | 16dB | 25V | JUNCTION | 3 dB | 10V | 2.5 pF | 5.33mm | 5.2mm | 4.19mm | 无SVHC | Non-RoHS Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | AFT09MS015NT1 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | Automotive grade | PLD-1.5W | 40V | Tape & Reel (TR) | 2009 | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 8541.29.00.40 | 260 | 870MHz | 40 | 100mA | LDMOS | 17.2dB | 16W | 12.5V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BF5030WH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 8V | Tin | 表面贴装 | SC-82A, SOT-343 | 4 | 1 | Tape & Reel (TR) | 2005 | e3 | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -55°C | 200mW | 25mA | 800MHz | BF5030 | 10mA | 无卤素 | N-Channel | 25mA | 6V | 24dB | 1.3dB | 3V | 无 | 符合RoHS标准 | 无铅 |