制造商是'Vishay'
Vishay 晶体管 - IGBT - 模块
(96)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 安装类型 | 包装/外壳 | 供应商器件包装 | 厂商 | 操作温度 | 包装 | 系列 | 零件状态 | 类型 | 子类别 | 技术 | 配置 | 输出电流 | 功率 - 最大 | 上升时间 | 输入 | 产品类别 | 最大集极截止电流 | 电压 - 集射极击穿(最大值) | 不同 Vge、Ic 时 Vce(on)(最大值) | IGBT类型 | NTC热敏电阻 | 输入电容(Cies)@Vce | 产品 | Vf-正向电压 | 产品类别 | |||||||||||||||||||||||
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VS-ENV020M120M | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 1200 V | 87 W | N-Channel | + 150 C | 100 | 压装 | Vishay | Vishay Semiconductors | Details | Discrete Semiconductor Modules | EMIPAK | Vishay General Semiconductor - Diodes Division | Box | Bulk | * | PressFit Power Module | Discrete Semiconductor Modules | 1-Phase Bridge | 33 A | Diode Power Modules | 1.29 V | Discrete Semiconductor Modules | ||||||||||||||||||||||||||||
VS-GT300TD60S | Vishay | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | 466 A | 活跃 | Module | INT-A-PAK | Vishay General Semiconductor - Diodes Division | Tube | -40°C ~ 175°C (TJ) | FRED Pt® | 半桥 | 882 W | Standard | 200 µA | 600 V | 1.47V @ 15V, 300A | 沟渠现场停车 | 无 | 24.2 nF @ 25 V | |||||||||||||||||||||||||||||||||
VS-VSHPS1445 | Vishay | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Obsolete | Vishay General Semiconductor - Diodes Division | Tray | - | |||||||||||||||||||||||||||||||||||||||||||||||
VS-GT250SA60S | Vishay | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | 359 A | 活跃 | SOT-227-4, miniBLOC | SOT-227 | Vishay General Semiconductor - Diodes Division | Tube | -40°C ~ 175°C (TJ) | - | Single | 750 W | Standard | 100 µA | 600 V | 1.16V @ 15V, 100A | 沟渠现场停车 | 无 | 24.2 nF @ 25 V | |||||||||||||||||||||||||||||||||
VS-GT75YF120NT | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | 活跃 | 118 A | - 20 V, + 20 V | 431 W | + 150 C | - 40 C | 12 | 螺钉安装 | Vishay | Vishay Semiconductors | Details | 1.2 kV | IGBT晶体管 | Module | - | Vishay General Semiconductor - Diodes Division | Box | -40°C ~ 150°C (TJ) | Bulk | - | IGBTs | Si | 全桥 | 431 W | Standard | 100 μA | 1200 V | 2.6V @ 15V, 75A | 沟渠现场停车 | 有 | IGBT晶体管 | |||||||||||||||||||
VS-GT75YF120UT | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | 活跃 | 118 A | - 20 V, + 20 V | 431 W | + 150 C | - 40 C | 12 | 螺钉安装 | Vishay | Vishay Semiconductors | Details | 1.2 kV | IGBT晶体管 | Module | - | Vishay General Semiconductor - Diodes Division | Box | -40°C ~ 150°C (TJ) | Bulk | - | IGBTs | Si | 全桥 | 431 W | Standard | 100 μA | 1200 V | 2.6V @ 15V, 75A | 沟渠现场停车 | 有 | IGBT晶体管 | |||||||||||||||||||
VS-ENZ025C60N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 600 V | 600 V | 83 ns | 2.6 V | 104 W | N-Channel | + 150 C | - 20 V, + 20 V | 100 | 压装 | Vishay | Vishay Semiconductors | 71 mOhms | Details | 111 ns | 26 A | Discrete Semiconductor Modules | EMIPAK | Vishay General Semiconductor - Diodes Division | Box | Bulk | * | PressFit Power Module | Discrete Semiconductor Modules | 1-Phase Bridge | 26 ns | Diode Power Modules | Discrete Semiconductor Modules | ||||||||||||||||||||||
VS-GT100LA65UF | Vishay | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GT90DA60U | Vishay | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GT400LH060N | Vishay | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GT100TS065S | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | Module | INT-A-PAK IGBT | 247 A | -40°C ~ 175°C (TJ) | Box | FRED Pt? | 活跃 | 半桥逆变器 | 517 W | Standard | 100 μA | 650 V | 1.32V @ 15V, 100A | Trench | 无 | |||||||||||||||||||||||||||||||||||
VS-GP300TD60S | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GP300 | Dual INT-A-PAK (3 + 8) | Dual INT-A-PAK | 580 A | -40°C ~ 150°C (TJ) | Tube | Obsolete | 半桥 | 1136 W | Standard | 150 µA | 600 V | 1.45V @ 15V, 300A | PT, Trench | 无 | |||||||||||||||||||||||||||||||||||
VS-GT105NA120UX | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GT105 | SOT-227-4, miniBLOC | SOT-227 | 134 A | -40°C ~ 150°C (TJ) | Tube | Obsolete | Single | 463 W | Standard | 75 µA | 1200 V | Trench | 无 | ||||||||||||||||||||||||||||||||||||
VS-GT80DA120U | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GT80 | SOT-227-4, miniBLOC | SOT-227 | 139 A | -40°C ~ 150°C (TJ) | Tube | HEXFRED® | 活跃 | Single | 658 W | Standard | 100 µA | 1200 V | 2.55V @ 15V, 80A | Trench | 无 | 4.4 nF @ 25 V | |||||||||||||||||||||||||||||||||
VS-GB55NA120UX | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GB55 | SOT-227-4, miniBLOC | SOT-227 | 84 A | -40°C ~ 150°C (TJ) | Tube | HEXFRED® | Obsolete | Single | 431 W | Standard | 50 µA | 1200 V | NPT | 无 | |||||||||||||||||||||||||||||||||||
VS-GB50NA120UX | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GB50 | SOT-227-4, miniBLOC | SOT-227 | 84 A | -40°C ~ 150°C (TJ) | Bulk | Obsolete | Single | 431 W | Standard | 50 µA | 1200 V | 2.8V @ 15V, 50A | NPT | 无 | |||||||||||||||||||||||||||||||||||
VS-GT100TP120N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GT100 | INT-A-PAK (3 + 4) | INT-A-PAK | 180 A | 175°C (TJ) | Bulk | Obsolete | 半桥 | 652 W | Standard | 5 mA | 1200 V | 2.35V @ 15V, 100A | Trench | 无 | 12.8 nF @ 30 V | ||||||||||||||||||||||||||||||||||
VS-CPV364M4KPBF | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | CPV364 | 19-SIP (13 Leads), IMS-2 | IMS-2 | 24 A | -55°C ~ 150°C (TJ) | Bulk | Obsolete | 三相逆变器 | 63 W | Standard | 250 µA | 600 V | 1.8V @ 15V, 24A | 无 | 1.6 nF @ 30 V | |||||||||||||||||||||||||||||||||||
VS-GB75YF120UT | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GB75 | Module | ECONO2 4PACK | 100 A | 150°C (TJ) | Bulk | Obsolete | 480 W | Standard | 250 µA | 1200 V | 4.5V @ 15V, 100A | 有 | |||||||||||||||||||||||||||||||||||||
VS-GT400TH60N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GT400 | Double INT-A-PAK (3 + 8) | Double INT-A-PAK | 530 A | 175°C (TJ) | Bulk | 活跃 | 半桥 | 1600 W | Standard | 5 mA | 600 V | 2.05V @ 15V, 400A | Trench | 无 | 30.8 nF @ 30 V | ||||||||||||||||||||||||||||||||||
VS-GB150TH120N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GB150 | Double INT-A-PAK (3 + 4) | Double INT-A-PAK | 300 A | 150°C (TJ) | Bulk | Obsolete | 半桥 | 1008 W | Standard | 5 mA | 1200 V | 2.35V @ 15V, 150A | 无 | 11 nF @ 25 V | |||||||||||||||||||||||||||||||||||
VS-50MT060WHTAPBF | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | 50MT060 | 12-MTP Module | MTP | 114 A | -40°C ~ 150°C (TJ) | Tray | Obsolete | 半桥 | 658 W | Standard | 400 µA | 600 V | 3.2V @ 15V, 100A | 无 | 7.1 nF @ 30 V | |||||||||||||||||||||||||||||||||||
VS-GB100NH120N | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GB100 | Double INT-A-PAK (3 + 4) | Double INT-A-PAK | 200 A | 150°C (TJ) | Bulk | Obsolete | Single | 833 W | Standard | 5 mA | 1200 V | 2.35V @ 15V, 100A | 无 | 8.58 nF @ 25 V | |||||||||||||||||||||||||||||||||||
VS-ETF150Y65U | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | ETF150 | EMIPAK-2B | EMIPAK-2B | 142 A | 175°C (TJ) | Tray | Obsolete | 三级逆变器 | 417 W | Standard | 100 µA | 650 V | 2.06V @ 15V, 100A | Trench | 无 | 6.6 nF @ 30 V | ||||||||||||||||||||||||||||||||||
VS-GA250SA60S | Vishay General Semiconductor - Diodes Division | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 底座安装 | GA250 | SOT-227-4 | SOT-227 | 400 A | -40°C ~ 150°C (TJ) | Tube | Obsolete | Single | 961 W | Standard | 1 mA | 600 V | 1.66V @ 15V, 200A | 无 | 16.25 nF @ 30 V |