制造商是'Toshiba'
Toshiba 光隔离器 - 晶体管，光电输出
(1271)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 制造商包装标识符 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 最高工作温度 | 最小工作温度 | 附加功能 | 子类别 | 最大功率耗散 | Reach合规守则 | 电压-隔离度 | 输出类型 | 配置 | 通道数量 | 功率耗散 | 电压 - 正向 (Vf) (类型) | 输入类型 | 接通延迟时间 | 正向电流 | 最大输出电压 | 每个通道的输出电流 | 上升时间 | 正向电压 | 下降时间（典型值） | 产品类别 | 集电极发射器电压(VCEO) | 最大集电极电流 | 上升/下降时间(Typ) | 输出/通道电流 | 正向电流-最大 | 反向击穿电压 | 电压 - 输出（最大值） | 反向电压 | 最大输入电流 | 最大直流驱动电流（If） | 隔离电压 | 电流传输比（最大） | 接通 / 关断时间（典型值） | 最大结点温度（Tj） | Vce 饱和度（最大值） | 反向电压(直流电) | 环境温度范围高 | 电流传输比 | 暗电流（最大） | 集电极-发射器电压-最小值 | Vf-正向电压 | 产品类别 | 高度 | 辐射硬化 | 达到SVHC | RoHS状态 | |||||||||||||||||||||||||
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 | TLP185(GR-TPL,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | 表面贴装 | 表面贴装 | 6-SOIC (0.173, 4.40mm Width), 4 Leads | 4 | 100% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2015 | yes | 活跃 | 1 (Unlimited) | UL认证 | 200mW | 3750Vrms | Transistor | SINGLE | 1 | 1.25V | DC | 80V | 50mA | 300mV | 50mA | 2μs 3μs | 0.05A | 50mA | 300% @ 5mA | 3μs, 3μs | 80nA | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TLP293(GB-TPL,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 100% @ 5mA | 1 | 3 μs | Military grade | 表面贴装 | 表面贴装 | 4-SOIC (0.179, 4.55mm Width) | 4 | 80V | -55°C~125°C | Tape & Reel (TR) | 2014 | yes | 活跃 | 1 (Unlimited) | UL 认证 | 200mW | 3750Vrms | Transistor | SINGLE | 1 | 200mW | 1.25V | DC | 3 μs | 10mA | 80V | 50mA | 80V | 50mA | 2μs 3μs | 5V | 50mA | 600% @ 5mA | 3μs, 3μs | 125°C | 300mV | 125°C | 80nA | 2.3mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||
 | TLP292-4(GB-TP,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 3 μs | Military grade | 表面贴装 | 表面贴装 | 16-SOIC (0.179, 4.55mm Width) | 16 | 100% @ 5mA | -55°C~125°C | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | 3750Vrms | Transistor | 4 | 170mW | 1.25V | AC, DC | 3 μs | 10mA | 80V | 50mA | 80V | 2μs 3μs | 600% @ 5mA | 3μs, 3μs | 125°C | 300mV | 125°C | 2.3mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP291(GB,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 100% @ 5mA | 1 | 3 μs | 表面贴装 | 表面贴装 | 4-SOIC (0.179, 4.55mm Width) | 4 | 80V | -55°C~110°C | Tube | 2013 | 活跃 | 1 (Unlimited) | UL RECOGNIZED, VDE APPROVED | 3750Vrms | Transistor | SINGLE | 1 | 200mW | 1.25V | DC | 3 μs | 50mA | 80V | 50mA | 300mV | 2μs 3μs | 600% @ 5mA | 3μs, 3μs | 125°C | 80nA | 2.2mm | Unknown | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP290(GB-TP,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | 表面贴装 | 表面贴装 | 4-SOIC (0.179, 4.55mm Width) | 4 | 100% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | UL RECOGNIZED, VDE APPROVED | 200mW | 3750Vrms | Transistor | SINGLE | 1 | 1.25V | AC, DC | 80V | 50mA | 300mV | 50mA | 2μs 3μs | 0.05A | 50mA | 600% @ 5mA | 3μs, 3μs | 80nA | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TLP383(GR-TPL,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 3 μs | Military grade | 表面贴装 | 表面贴装 | 6-SOIC (0.173, 4.40mm Width), 4 Leads | 100% @ 5mA | -55°C~125°C | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 5000Vrms | Transistor | 1 | 250mW | 1.25V | DC | 3 μs | 10mA | 80V | 50mA | 80V | 2μs 3μs | 5V | 300% @ 5mA | 3μs, 3μs | 125°C | 300mV | 2.3mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP183(GB-TPL,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | Military grade | 表面贴装 | 表面贴装 | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 4 | 100% @ 5mA | -55°C~125°C | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | UL认证 | 200mW | 3750Vrms | Transistor | SINGLE | 1 | 1.25V | DC | 80V | 50mA | 300mV | 50mA | 2μs 3μs | 0.05A | 50mA | 600% @ 5mA | 3μs, 3μs | 80nA | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP290-4(TP,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4 | 3 μs | 表面贴装 | 表面贴装 | 16-SOIC (0.179, 4.55mm Width) | 16 | 50% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | UL认证 | 170mW | 2500Vrms | Transistor | 4 | 1.2V | AC, DC | 3 μs | 10mA | 80V | 50mA | 80V | 50mA | 2μs 3μs | 50mA | 400% @ 5mA | 3μs, 3μs | 125°C | 110°C | 100nA | 2.3mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP292-4(E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Military grade | 表面贴装 | 表面贴装 | 16-SOIC (0.179, 4.55mm Width) | 50% @ 5mA | -55°C~125°C | Tube | 2015 | 活跃 | 1 (Unlimited) | 3750Vrms | Transistor | 4 | 1.25V | AC, DC | 80V | 50mA | 300mV | 2μs 3μs | 600% @ 5mA | 3μs, 3μs | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP291(GB-TP,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 4-SOIC (0.179, 4.55mm Width) | 4 | 100% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | 3750Vrms | Transistor | 1 | 170mW | 1.25V | DC | 50mA | 80V | 50mA | 300mV | 2μs 3μs | 5V | 600% @ 5mA | 3μs, 3μs | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TLP187(E,T) | Toshiba | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | SMD/SMT | 1000 % | 50 mA | 300 V | 150 mA | 1.2 V | 100 mW | - 55 C | + 110 C | 125 | 0.002822 oz | SO6 | TLP187 is a Photo Coupler that Consist of a GaAlAs Infrared Light-Emitting Diode Optically Coupled to a Darlington Transistor | Phototransistor | 5 V | 表面贴装 | SO6-4 | 4 | Details | Bulk | TLP187 | Phototransistor | 1 Channel | 1 Channel | 40 us | 3750 Vrms | - | 1000 % | 1.4 V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | TLP781(D4-GB,F) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 1 | 通孔 | 4-DIP (0.300, 7.62mm) | NO | 100% @ 5mA | -55°C~110°C | 2008 | 最后一次购买 | 1 (Unlimited) | 5000Vrms | Transistor | 1 | 1.15V | DC | 2μs 3μs | 0.025A | 60mA | 600% @ 5mA | 3μs, 3μs | 400mV | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP628M(E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | 50% @ 5mA | TLP628 | 100 | 通孔 | Toshiba | Toshiba | Details | 晶体管输出光耦合器 | 通孔 | 4-DIP (0.300", 7.62mm) | 4-DIP | 东芝半导体与存储 | Tube | -55°C ~ 125°C | Tube | - | Optocouplers | 5000Vrms | Transistor | 1 | 1.25V | DC | 5.5μs, 10μs | 50mA | 350V | 50 mA | 600% @ 5mA | 10μs, 10μs | 400mV | 晶体管输出光耦合器 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP183(GR-TPL,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Military grade | 表面贴装 | 表面贴装 | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 4 | 100% @ 5mA | -55°C~125°C | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | 200mW | 3750Vrms | Transistor | 1 | 1.25V | DC | 80V | 50mA | 300mV | 50mA | 2μs 3μs | 50mA | 300% @ 5mA | 3μs, 3μs | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP290-4(GB-TP,E) | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 4 | 3 μs | 表面贴装 | 表面贴装 | 16-SOIC (0.179, 4.55mm Width) | 16 | 100% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | UL认证 | 100mW | 2500Vrms | Transistor | 4 | 170mW | 1.2V | AC, DC | 3 μs | 10mA | 80V | 50mA | 80V | 50mA | 2μs 3μs | 50mA | 400% @ 5mA | 3μs, 3μs | 125°C | 110°C | 100nA | 2.3mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP184(GB-TPL,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | 表面贴装 | 表面贴装 | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 4 | 100% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2015 | 活跃 | 1 (Unlimited) | UL认证 | 200mW | 3750Vrms | Transistor | SINGLE | 1 | 1.25V | AC, DC | 80V | 50mA | 300mV | 10mA | 2μs 3μs | 0.05A | 20mA | 600% @ 5mA | 3μs, 3μs | 80nA | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP187(E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | 表面贴装 | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 1000% @ 1mA | -55°C~110°C | Tube | 2015 | 活跃 | 1 (Unlimited) | UL认证 | 3750Vrms | Darlington | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 1 | 1.25V | DC | 40μs 15μs | 0.05A | 50mA | 50μs, 15μs | 1.2V | 4000% | 200nA | 300V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP293-4(V4-GB,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 4 | Military grade | 表面贴装 | 表面贴装 | 16-SOIC (0.179, 4.55mm Width) | 100% @ 5mA | -55°C~125°C | Tube | 2004 | 活跃 | 1 (Unlimited) | UL APPROVED, VDE APPROVED | unknown | 3750Vrms | Transistor | 4 | 1.25V | DC | 80V | 50mA | 300mV | 2μs 3μs | 0.05A | 600% @ 5mA | 3μs, 3μs | 80nA | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP185(SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 50% @ 5mA | 1 | 表面贴装 | 表面贴装 | 6-SOIC (0.173, 4.40mm Width), 4 Leads | 4 | 11-4M1S | 80V | -55°C~110°C | Tube | 2014 | 活跃 | UL 认证 | 200mW | 3750Vrms | Transistor | SINGLE | 1 | 200mW | 1.25V | DC | 50mA | 5μs | 9 μs | 80V | 50mA | 2μs 3μs | 50mA | 600% @ 5mA | 3μs, 3μs | 125°C | 300mV | 5V | 80nA | 2.3mm | Unknown | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP291(BL-TP,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 4-SOIC (0.179, 4.55mm Width) | 4 | 200% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2013 | yes | 活跃 | 1 (Unlimited) | 200mW | 3750Vrms | Transistor | 1 | 1.25V | DC | 80V | 50mA | 300mV | 50mA | 2μs 3μs | 50mA | 600% @ 5mA | 3μs, 3μs | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP293-4(4LGBTPE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 3 μs | Military grade | 表面贴装 | 表面贴装 | 16-SOIC (0.179, 4.55mm Width) | 16 | 16-SO | 100% @ 500μA | -55°C~125°C | Tape & Reel (TR) | 2002 | 活跃 | 1 (Unlimited) | 125°C | -55°C | 3750Vrms | Transistor | 4 | 170mW | 1.25V | DC | 3 μs | 10mA | 80V | 50mA | 1.25V | 80V | 2μs 3μs | 5V | 50mA | 600% @ 500μA | 3μs, 3μs | 125°C | 300mV | 2.3mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP182(GB-TPL,E | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | Military grade | 表面贴装 | 表面贴装 | 6-SOIC (0.179, 4.55mm Width), 4 Leads | 4 | 100% @ 5mA | -55°C~125°C | Tape & Reel (TR) | 2013 | 活跃 | 1 (Unlimited) | 200mW | 3750Vrms | Transistor | 1 | 1.25V | AC, DC | 80V | 50mA | 300mV | 50mA | 2μs 3μs | 0.05A | 50mA | 600% @ 5mA | 3μs, 3μs | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP290(GB,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | 表面贴装 | 表面贴装 | 4-SOIC (0.179, 4.55mm Width) | 4 | 100% @ 5mA | -55°C~110°C | Bulk | 2013 | 不用于新设计 | 1 (Unlimited) | UL 认证 | 200mW | 3750Vrms | Transistor | SINGLE | 1 | 1.25V | AC, DC | 50mA | 80V | 50mA | 300mV | 50mA | 4μs 7μs | 50mA | 400% @ 5mA | 7μs, 7μs | 80nA | 无 | Unknown | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP291-4(V4GBTPE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 52 Weeks | 4 | 表面贴装 | 16-SOIC (0.179, 4.55mm Width) | 100% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | UL APPROVED, VDE APPROVED | 2500Vrms | Transistor | 4 | 1.2V | DC | 2μs 3μs | 0.05A | 400% @ 5mA | 3μs, 3μs | 400mV | 100nA | 80V | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLP185(GB-TPR,SE | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1 | 表面贴装 | 6-SOIC (0.173, 4.40mm Width), 4 Leads | 100% @ 5mA | -55°C~110°C | Tape & Reel (TR) | 2014 | 活跃 | UL认证 | 3750Vrms | Transistor | SINGLE | 1 | 1.25V | DC | 2μs 3μs | 0.05A | 600% @ 5mA | 3μs, 3μs | 300mV | 80nA | 80V | 符合RoHS标准 |