制造商是'Taiwan Semiconductor'
Taiwan Semiconductor 存储器 - 模块
(64)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 表面安装 | 终端数量 | Date Of Intro | JESD-609代码 | ECCN 代码 | 类型 | 端子表面处理 | 附加功能 | HTS代码 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | 功能数量 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 引脚数量 | JESD-30代码 | 资历状况 | 电源电压-最大值(Vsup) | 温度等级 | 电源电压-最小值(Vsup) | 操作模式 | 电源电流-最大值 | 组织结构 | 输出特性 | 座位高度-最大 | 内存宽度 | 待机电流-最大值 | 记忆密度 | 并行/串行 | 内存IC类型 | 编程电压 | 串行总线类型 | 耐力 | 写入周期时间 - 最大值 | 数据保持时间 | 写入保护 | 备用内存宽度 | 数据轮询 | 拨动位 | 命令用户界面 | 扇区/尺寸数 | 行业规模 | 准备就绪/忙碌 | 引导模块 | 通用闪存接口 | 长度 | 宽度 | ||||||||||||||||||
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![]() | EN25S80B-104XFIP2S | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | USON-8 | 104 MHz | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.12,20 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 1.8 V | 8 | 2017-07-31 | 接触制造商 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 0.5 mm | unknown | 未说明 | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.0095 mA | 1MX8 | 3-STATE | 0.5 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 1.8 V | QSPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 3 mm | 2 mm | ||||||||||||||||||||
![]() | EN29LV160CT-70BIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | LFBGA, | 70 ns | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 48 | 活跃 | EAR99 | NOR型号 | 顶部引导扇区 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 0.016 mA | 1MX16 | 1.3 mm | 16 | 0.000005 A | 16777216 bit | PARALLEL | FLASH | 3 V | 100000 Write/Erase Cycles | 0.00007 ms | 20 | 8 | YES | YES | YES | 1,2,1,31 | 16K,8K,32K,64K | YES | TOP | YES | 8 mm | 6 mm | |||||||||||||||
![]() | ES29LV400DB-70TC | Excel (Suzhou) Semiconductor Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | EXCEL SEMICONDUCTOR INC | TSSOP, TSSOP48,.8,20 | 70 ns | 3 | 262144 words | 256000 | 70 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 48 | 无 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 240 | 0.5 mm | unknown | R-PDSO-G48 | 不合格 | COMMERCIAL | 0.03 mA | 256KX16 | 16 | 0.00001 A | 4194304 bit | PARALLEL | FLASH | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,7 | 16K,8K,32K,64K | YES | BOTTOM | |||||||||||||||||||||||||
![]() | EN25S20A-104WIP2SF | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VDFN-8 | 104 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 1.8 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.02 mA | 256KX8 | 3-STATE | 0.8 mm | 8 | 0.00001 A | 2097152 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 6 mm | 5 mm | |||||||||||||||||||
![]() | EN29SL800B-90MIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VFBGA, BGA48,6X11,20 | 90 ns | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | BGA48,6X11,20 | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 48 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.5 mm | unknown | R-PBGA-B48 | 不合格 | 2.2 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 0.03 mA | 512KX16 | 0.73 mm | 16 | 0.000005 A | 8388608 bit | PARALLEL | FLASH | 1.8 V | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | BOTTOM | 6 mm | 5 mm | |||||||||||||||||
![]() | EN25S80B-104WIP2S | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VDFN-8 | 104 MHz | 1048576 words | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 1.8 V | 8 | 2017-07-31 | 接触制造商 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.0095 mA | 1MX8 | 3-STATE | 0.8 mm | 8 | 0.00001 A | 8388608 bit | SERIAL | FLASH | 1.8 V | QSPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 6 mm | 5 mm | ||||||||||||||||||||
![]() | ES29LV800DT-70WGI | Excel (Suzhou) Semiconductor Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | EXCEL SEMICONDUCTOR INC | FBGA, BGA48,6X8,32 | 70 ns | 3 | 524288 words | 512000 | 85 °C | -40 °C | PLASTIC/EPOXY | FBGA | BGA48,6X8,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | 48 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | BOTTOM | BALL | 260 | 0.8 mm | unknown | R-PBGA-B48 | 不合格 | INDUSTRIAL | 0.03 mA | 512KX16 | 16 | 0.00001 A | 8388608 bit | PARALLEL | FLASH | 100000 Write/Erase Cycles | 8 | YES | YES | YES | 1,2,1,15 | 16K,8K,32K,64K | YES | TOP | ||||||||||||||||||||||||
![]() | EN29GL064AT-70BIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | LFBGA, | 70 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | LFBGA | RECTANGULAR | GRID ARRAY, LOW PROFILE, FINE PITCH | 3 V | 48 | 接触制造商 | EAR99 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 4MX16 | 1.3 mm | 16 | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | 8 mm | 6 mm | |||||||||||||||||||||||||||||||
![]() | EN27SN1G08-45CEIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VFBGA, | 134217728 words | 128000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 63 | 接触制造商 | EAR99 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B63 | 1.95 V | INDUSTRIAL | 1.7 V | ASYNCHRONOUS | 128MX8 | 1 mm | 8 | 1073741824 bit | PARALLEL | FLASH | 1.8 V | 11 mm | 9 mm | |||||||||||||||||||||||||||||||||
![]() | EN25F10A-104RBIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | VSOP, SOP8,.25 | 104 MHz | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | SOP8,.25 | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | 3 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.028 mA | 128KX8 | 3-STATE | 0.9 mm | 8 | 0.00002 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 4.9 mm | 3.9 mm | |||||||||||||||||||
![]() | EN29GL064AT-70TIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSOP1, | 70 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSOP1 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | 3 V | 48 | Obsolete | EAR99 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | R-PDSO-G48 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 4MX16 | 1.2 mm | 16 | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | 18.4 mm | 12 mm | |||||||||||||||||||||||||||||||
![]() | EN25S32-104RIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VSOP, | 104 MHz | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | SQUARE | SMALL OUTLINE, VERY THIN PROFILE | 1.8 V | 8 | 接触制造商 | EAR99 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | S-PDSO-G8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 4MX8 | 1 mm | 8 | 33554432 bit | SERIAL | FLASH | 1.8 V | 5.28 mm | 5.28 mm | ||||||||||||||||||||||||||||||||
![]() | EN25F20A-104XIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | USON-8 | 104 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3 V | 8 | 接触制造商 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 1 | 0.5 mm | unknown | R-PDSO-N8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 256KX8 | 0.6 mm | 8 | 2097152 bit | SERIAL | FLASH | 2.7 V | 3 mm | 2 mm | |||||||||||||||||||||||||||||||
![]() | EN25S64A-104HIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 活跃 | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | SOP-8 | 104 MHz | 8388608 words | 8000000 | 85 °C | -40 °C | PLASTIC/EPOXY | SOP | SOP8,.3 | SQUARE | 小概要 | 1.8 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | S-PDSO-G8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 0.03 mA | 8MX8 | 3-STATE | 2.2 mm | 8 | 0.000035 A | 67108864 bit | SERIAL | FLASH | 1.8 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 5.275 mm | 5.275 mm | |||||||||||||||||||
![]() | EN39SL160AH-70BIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 1000000 | 85 °C | -40 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 1.8 V | 70 ns | TFBGA-48 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | 接触制造商 | 48 | 1048576 words | EAR99 | NOR型号 | 保护的最高地址扇区 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.5 mm | unknown | R-PBGA-B48 | 1.95 V | INDUSTRIAL | 1.65 V | ASYNCHRONOUS | 1MX16 | 0.73 mm | 16 | 16777216 bit | PARALLEL | FLASH | 1.8 V | 8 | BOTTOM/TOP | 6 mm | 4 mm | ||||||||||||||||||||||||||||
![]() | EN25F10A-104WIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MICROELECTRONICS TECHNOLOGYINC | HVSON, SOLCC8,.25 | 104 MHz | 131072 words | 128000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-N8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.028 mA | 128KX8 | 3-STATE | 0.8 mm | 8 | 0.00002 A | 1048576 bit | SERIAL | FLASH | 2.7 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 6 mm | 5 mm | |||||||||||||||||||
![]() | F59L1G81LA-25BG2Y | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VFBGA, | 134217728 words | 128000000 | 70 °C | PLASTIC/EPOXY | VFBGA | RECTANGULAR | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 3.3 V | 63 | 接触制造商 | EAR99 | 8542.32.00.51 | BOTTOM | BALL | 1 | 0.8 mm | unknown | R-PBGA-B63 | 3.6 V | COMMERCIAL | 2.7 V | ASYNCHRONOUS | 128MX8 | 1 mm | 8 | 1073741824 bit | PARALLEL | FLASH | 3.3 V | 11 mm | 9 mm | ||||||||||||||||||||||||||||||||||
![]() | F59L1G81LB-25BG2M | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | , | 2017-08-31 | 活跃 | EAR99 | 8542.32.00.51 | 未说明 | unknown | 未说明 | FLASH | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | EN25QH32B-104WIP2B | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | HVSON, | 104 MHz | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | SOLCC8,.25 | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 3 V | 8 | 2017-08-07 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-N8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 0.02 mA | 4MX8 | 3-STATE | 0.8 mm | 8 | 0.00002 A | 33554432 bit | SERIAL | FLASH | 3 V | SPI | 100000 Write/Erase Cycles | 20 | HARDWARE/SOFTWARE | 1 | 6 mm | 5 mm | ||||||||||||||||||
![]() | ES29LV320DB-90TGI | Excel (Suzhou) Semiconductor Co Ltd | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Obsolete | EXCEL SEMICONDUCTOR INC | TSSOP, TSSOP48,.8,20 | 90 ns | 3 | 2097152 words | 2000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | TSSOP48,.8,20 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 48 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 260 | 0.5 mm | unknown | R-PDSO-G48 | 不合格 | INDUSTRIAL | 0.03 mA | 2MX16 | 16 | 0.00001 A | 33554432 bit | PARALLEL | FLASH | 8 | YES | YES | YES | 8,63 | 8K,64K | YES | BOTTOM | YES | ||||||||||||||||||||||||
![]() | EN25S20A-104WIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | 接触制造商 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VDFN-8 | 104 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | HVSON | RECTANGULAR | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | 1.8 V | 8 | 有 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 无铅 | 未说明 | 1 | 1.27 mm | unknown | 未说明 | R-PDSO-N8 | 1.95 V | INDUSTRIAL | 1.65 V | SYNCHRONOUS | 256KX8 | 0.8 mm | 8 | 2097152 bit | SERIAL | FLASH | 1.8 V | 6 mm | 5 mm | ||||||||||||||||||||||||||||
![]() | EN29F002ANT-70PCP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | , | 接触制造商 | EAR99 | 8542.32.00.51 | unknown | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CAT28F020NA-12 | Catalyst Semiconductor | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | Transferred | CATALYST SEMICONDUCTOR INC | QFJ | QCCJ, LDCC32,.5X.6 | 120 ns | 3 | 262144 words | 256000 | 105 °C | -40 °C | PLASTIC/EPOXY | QCCJ | LDCC32,.5X.6 | RECTANGULAR | CHIP CARRIER | 5 V | 32 | 无 | e0 | EAR99 | NOR型号 | 锡铅 | 8542.32.00.51 | QUAD | J BEND | 1 | 1.27 mm | unknown | 32 | R-PQCC-J32 | 不合格 | 5.5 V | INDUSTRIAL | 4.5 V | ASYNCHRONOUS | 0.03 mA | 256KX8 | 3.55 mm | 8 | 0.00001 A | 2097152 bit | PARALLEL | FLASH | 12 V | 100000 Write/Erase Cycles | NO | NO | YES | 13.97 mm | 11.43 mm | |||||||||||||||||
![]() | EN25F20A-104RBIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | VSOP-8 | 104 MHz | 262144 words | 256000 | 85 °C | -40 °C | PLASTIC/EPOXY | VSOP | RECTANGULAR | SMALL OUTLINE, VERY THIN PROFILE | 3 V | 8 | 活跃 | EAR99 | NOR型号 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 1.27 mm | unknown | R-PDSO-G8 | 3.6 V | INDUSTRIAL | 2.7 V | SYNCHRONOUS | 256KX8 | 0.9 mm | 8 | 2097152 bit | SERIAL | FLASH | 2.7 V | 4.9 mm | 3.9 mm | |||||||||||||||||||||||||||||||
![]() | EN29GL064H-70ZIP | Elite Semiconductor Memory Technology Inc | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | YES | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC | TSSOP, | 70 ns | 4194304 words | 4000000 | 85 °C | -40 °C | PLASTIC/EPOXY | TSSOP | RECTANGULAR | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | 3 V | 56 | Obsolete | EAR99 | 保护的最高地址扇区 | 8542.32.00.51 | DUAL | 鸥翼 | 1 | 0.5 mm | unknown | R-PDSO-G56 | 3.6 V | INDUSTRIAL | 2.7 V | ASYNCHRONOUS | 4MX16 | 1.2 mm | 16 | 67108864 bit | PARALLEL | FLASH | 3 V | 8 | 18.4 mm | 14 mm |