制造商是'STMicroelectronics'
STMicroelectronics 晶体管 - FET，MOSFET - 单个
(2840)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 质量 | 晶体管元件材料 | 制造商包装标识符 | 操作温度 | 包装 | 系列 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | Vgs（最大值） | 下降时间（典型值） | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 雪崩能量等级（Eas） | 最大结点温度（Tj） | 栅源电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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 | STW9NK90Z | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 160W Tc | 55 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-247-3 | 3 | 9.071847g | SILICON | 8A Tc | -55°C~150°C TJ | Tube | SuperMESH™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 1.3Ohm | Tin (Sn) | 雪崩 额定 | 900V | 8A | STW9N | 3 | Single | 增强型MOSFET | 160W | 22 ns | N-Channel | SWITCHING | 1.3 Ω @ 3.6A, 10V | 4.5V @ 100μA | 2115pF @ 25V | 72nC @ 10V | 13ns | ±30V | 28 ns | 8A | TO-247AC | 30V | 8A | 900V | 220 mJ | 20.15mm | 15.75mm | 5.15mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
 | STD20NF20 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 1 | 110W Tc | 40 ns | ACTIVE (Last Updated: 7 months ago) | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 18A Tc | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 125mOhm | 200V | 鸥翼 | 260 | not_compliant | 18A | 30 | STD20N | 3 | R-PSSO-G2 | 不合格 | Single | 增强型MOSFET | 90W | 15 ns | N-Channel | SWITCHING | 125m Ω @ 10A, 10V | 4V @ 250μA | 940pF @ 25V | 39nC @ 10V | 30ns | ±20V | 10 ns | 18A | 3V | 20V | 200V | 72A | 2.4mm | 6.6mm | 6.2mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
 | STP80NF10 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 300W Tc | 116 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-220-3 | 3 | 453.59237kg | SILICON | 80A Tc | -55°C~175°C TJ | Tube | STripFET™ II | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 15mOhm | Matte Tin (Sn) | 100V | 80A | STP80N | 3 | Single | 增强型MOSFET | 300W | 26 ns | N-Channel | SWITCHING | 15m Ω @ 40A, 10V | 4V @ 250μA | 5500pF @ 25V | 182nC @ 10V | 80ns | ±20V | 60 ns | 80A | 3V | TO-220AB | 20V | 100V | 9.15mm | 10.4mm | 4.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
| STW9N150 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 320W Tc | 86 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-247-3 | 3 | SILICON | 8A Tc | -55°C~150°C TJ | Tube | PowerMESH™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 2.5Ohm | Tin (Sn) | STW9N | 3 | 1 | Single | 增强型MOSFET | 320W | 41 ns | N-Channel | SWITCHING | 2.5 Ω @ 4A, 10V | 5V @ 250μA | 3255pF @ 25V | 89.3nC @ 10V | 14.7ns | 1500V | ±30V | 52 ns | 8A | 4V | 30V | 8A | 1.5kV | 720 mJ | 150°C | 24.45mm | 15.75mm | 5.15mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| STW11NK100Z | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 230W Tc | 98 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-247-3 | 3 | 9.071847g | SILICON | 8.3A Tc | -55°C~150°C TJ | Tube | SuperMESH™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 1.38Ohm | Tin (Sn) | AVALANCHE RATED, HIGH VOLTAGE | 1kV | 8.3A | STW11N | 3 | 1 | Single | 增强型MOSFET | 230W | 27 ns | N-Channel | SWITCHING | 1.38 Ω @ 4.15A, 10V | 4.5V @ 100μA | 3500pF @ 25V | 162nC @ 10V | 18ns | 1000V | ±30V | 55 ns | 8.3A | 3.75V | TO-247AC | 30V | 9A | 1kV | 550 mJ | 150°C | 24.45mm | 15.75mm | 5.15mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||
 | STH3N150-2 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 23 Weeks | 10V | 1 | 140W Tc | 45 ns | ACTIVE (Last Updated: 8 months ago) | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab) Variant | 3 | SILICON | H2PAK-2-8159712 | 2.5A Tc | 150°C TJ | Cut Tape (CT) | PowerMESH™ | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 鸥翼 | STH3N | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 140W | DRAIN | 24 ns | N-Channel | SWITCHING | 9 Ω @ 1.3A, 10V | 5V @ 250μA | 939pF @ 25V | 29.3nC @ 10V | 47ns | 1500V | ±30V | 61 ns | 2.5A | 4V | 30V | 9Ohm | 1.5kV | 450 mJ | 150°C | 5mm | 10.4mm | 15.8mm | 无 | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||
 | STP12NM50FP | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 10V | 1 | 35W Tc | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-220-3 Full Pack | 3 | SILICON | 12A Tc | -65°C~150°C TJ | Tube | MDmesh™ | e3 | 活跃 | 1 (Unlimited) | 3 | 350mOhm | Matte Tin (Sn) - annealed | 雪崩 额定 | 500V | 12A | STP12 | 3 | 1 | Single | 增强型MOSFET | 35W | ISOLATED | 20 ns | N-Channel | SWITCHING | 350m Ω @ 6A, 10V | 5V @ 50μA | 1000pF @ 25V | 39nC @ 10V | 10ns | ±30V | 12A | 4V | TO-220AB | 30V | 500V | 48A | 400 mJ | 150°C | 20mm | 10.4mm | 4.6mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| STW45NM60 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 10V | 1 | 417W Tc | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-247-3 | 3 | 9.071847g | SILICON | 45A Tc | 150°C TJ | Tube | MDmesh™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 110mOhm | Tin (Sn) | 600V | 45A | STW45N | 3 | Single | 增强型MOSFET | 417W | 30 ns | N-Channel | SWITCHING | 110m Ω @ 22.5A, 10V | 5V @ 250μA | 3800pF @ 25V | 134nC @ 10V | 20ns | 650V | ±30V | 23 ns | 45A | 4V | TO-247AC | 30V | 600V | 850 mJ | 20.15mm | 15.75mm | 5.15mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| STP11NK50ZFP | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 1 | 30W Tc | 41 ns | ACTIVE (Last Updated: 7 months ago) | Tin | 通孔 | 通孔 | TO-220-3 Full Pack | 3 | SILICON | TO-220FP-7012510 | 10A Tc | -55°C~150°C TJ | Tube | SuperMESH™ | e3 | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | 520MOhm | 雪崩 额定 | STP11N | 3 | 1 | Single | 增强型MOSFET | 30W | ISOLATED | 14.5 ns | N-Channel | SWITCHING | 520m Ω @ 4.5A, 10V | 4.5V @ 100μA | 1390pF @ 25V | 68nC @ 10V | 18ns | ±30V | 15 ns | 10A | 3.75V | TO-220AB | 30V | 500V | 40A | 150°C | 20mm | 10.4mm | 4.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
| STP12NM50 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 10V | 1 | 160W Tc | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-220-3 | 3 | 4.535924g | SILICON | 12A Tc | -65°C~150°C TJ | Tube | MDmesh™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 350mOhm | Tin (Sn) | 雪崩 额定 | 500V | 12A | STP12 | 3 | 1 | Single | 增强型MOSFET | 160W | 20 ns | N-Channel | SWITCHING | 350m Ω @ 6A, 10V | 5V @ 50μA | 1000pF @ 25V | 39nC @ 10V | 10ns | ±30V | 12A | 4V | TO-220AB | 30V | 500V | 48A | 400 mJ | 150°C | 19.68mm | 10.4mm | 4.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
| STP4N150 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 160W Tc | 45 ns | ACTIVE (Last Updated: 8 months ago) | Tin | 通孔 | 通孔 | TO-220-3 | 3 | SILICON | 4A Tc | 150°C TJ | Tube | PowerMESH™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 7Ohm | 1.5kV | 4A | STP4N | 3 | 1 | Single | 增强型MOSFET | 160W | ISOLATED | 35 ns | N-Channel | SWITCHING | 7 Ω @ 2A, 10V | 5V @ 250μA | 1300pF @ 25V | 50nC @ 10V | 30ns | 1500V | ±30V | 45 ns | 4A | 4V | TO-220AB | 30V | 4A | 1.5kV | 150°C | 19.68mm | 10.4mm | 4.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| STW15NK90Z | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 350W Tc | 135 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-247-3 | 3 | 4.535924g | SILICON | 15A Tc | -55°C~150°C TJ | Tube | SuperMESH™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 400mOhm | Matte Tin (Sn) - annealed | AVALANCHE RATED, HIGH VOLTAGE | 1kV | 13A | STW15N | 3 | Single | 增强型MOSFET | 350W | 42 ns | N-Channel | SWITCHING | 550m Ω @ 7.5A, 10V | 4.5V @ 150μA | 6100pF @ 25V | 256nC @ 10V | 27ns | ±30V | 35 ns | 7.5A | 3.75V | TO-247AC | 30V | 900V | 60A | 20.15mm | 15.75mm | 5.15mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
 | STN3NF06L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 5V 10V | 1 | 3.3W Tc | 20 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | TO-261-4, TO-261AA | 4 | 4.535924g | SILICON | 4A Tc | -55°C~150°C TJ | Cut Tape (CT) | STripFET™ II | e3 | 活跃 | 1 (Unlimited) | 4 | EAR99 | Matte Tin (Sn) - annealed | 低阈值 | 60V | DUAL | 鸥翼 | 260 | 4A | STN3N | 4 | Single | 增强型MOSFET | 3.3W | DRAIN | 9 ns | N-Channel | SWITCHING | 100m Ω @ 1.5A, 10V | 2.8V @ 250μA | 340pF @ 25V | 9nC @ 5V | 25ns | ±16V | 10 ns | 4A | 2.8V | 16V | 4A | 60V | 1.8mm | 6.5mm | 3.5mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| STD30NF06LT4 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5V 10V | 1 | 70W Tc | 65 ns | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 4.535924g | SILICON | DPAK_P032P | 35A Tc | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 28mOhm | Matte Tin (Sn) | 逻辑电平兼容 | 60V | 鸥翼 | 260 | 35A | 30 | STD30N | 3 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 70W | 30 ns | N-Channel | SWITCHING | 28m Ω @ 18A, 10V | 2.5V @ 250μA | 1600pF @ 25V | 31nC @ 5V | 105ns | ±20V | 25 ns | 35A | 1.7V | TO-252AA | 20V | 60V | 175°C | 2.5 V | 2.4mm | 6.6mm | 6.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||
 | STB120NF10T4 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 312W Tc | 132 ns | ACTIVE (Last Updated: 8 months ago) | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 3 | 13.607771g | SILICON | 110A Tc | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ II | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.5mOhm | 100V | 鸥翼 | 245 | 120A | 30 | STB120N | 4 | R-PSSO-G2 | Single | 增强型MOSFET | 312W | DRAIN | 25 ns | N-Channel | SWITCHING | 10.5m Ω @ 60A, 10V | 4V @ 250μA | 5200pF @ 25V | 233nC @ 10V | 90ns | ±20V | 68 ns | 110A | 4V | 20V | 100V | 480A | 100V | 550 mJ | 4 V | 4.6mm | 10.4mm | 9.35mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||
| STD10NF10T4 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 1 | 50W Tc | 32 ns | ACTIVE (Last Updated: 8 months ago) | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | 4.535924g | SILICON | 13A Tc | -55°C~175°C TJ | Tape & Reel (TR) | STripFET™ II | e3 | 活跃 | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 130mOhm | 100V | 鸥翼 | 260 | 13A | 30 | STD10 | 3 | R-PSSO-G2 | Single | 增强型MOSFET | 50W | DRAIN | 16 ns | N-Channel | SWITCHING | 130m Ω @ 5A, 10V | 4V @ 250μA | 460pF @ 25V | 21nC @ 10V | 25ns | ±20V | 8 ns | 13A | 3V | 20V | 100V | 52A | 100V | 70 mJ | 3 V | 2.4mm | 6.6mm | 6.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||
| STD13NM60N | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 10V | 1 | 90W Tc | 30 ns | ACTIVE (Last Updated: 7 months ago) | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 11A Tc | 150°C TJ | Tape & Reel (TR) | MDmesh™ II | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 360mOhm | Matte Tin (Sn) - annealed | 鸥翼 | 260 | 30 | STD13 | 3 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 90W | 3 ns | N-Channel | SWITCHING | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 790pF @ 50V | 30nC @ 10V | 8ns | ±25V | 10 ns | 5.5A | 3V | 25V | 600V | 44A | 200 mJ | 150°C | 2.63mm | 6.6mm | 6.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| STD10P6F6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10V | 1 | 35W Tc | 16.5 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 10A Tc | 175°C TJ | Tape & Reel (TR) | DeepGATE™, STripFET™ VI | 活跃 | 1 (Unlimited) | 2 | EAR99 | 180MOhm | 鸥翼 | STD10 | R-PSSO-G2 | Single | 增强型MOSFET | 35W | DRAIN | P-Channel | SWITCHING | 160m Ω @ 5A, 10V | 4V @ 250μA | 340pF @ 48V | 6.4nC @ 10V | 7ns | ±20V | 10 ns | 10A | -4V | 20V | 60V | 40A | 80 mJ | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| STD3NK100Z | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 90W Tc | 39 ns | ACTIVE (Last Updated: 8 months ago) | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 2.5A Tc | -55°C~150°C TJ | Tape & Reel (TR) | SuperMESH™ | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 6Ohm | 鸥翼 | 260 | 30 | STD3N | 3 | R-PSSO-G2 | Single | 增强型MOSFET | 90W | 15 ns | N-Channel | SWITCHING | 6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 601pF @ 25V | 18nC @ 10V | 7.5ns | 1000V | ±30V | 32 ns | 2.5A | 3.75V | 30V | 1kV | 2.4mm | 6.6mm | 6.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| STW4N150 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 160W Tc | 45 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-247-3 | 3 | SILICON | 4A Tc | 150°C TJ | Tube | PowerMESH™ | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 7Ohm | Tin (Sn) | 1.5kV | 4A | STW4N | 3 | 1 | Single | 增强型MOSFET | 160W | ISOLATED | 35 ns | N-Channel | SWITCHING | 7 Ω @ 2A, 10V | 5V @ 250μA | 1300pF @ 25V | 50nC @ 10V | 30ns | 1500V | ±30V | 45 ns | 4A | 4V | 30V | 4A | 1.5kV | 150°C | 24.45mm | 15.75mm | 5.15mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
| STD4NK80ZT4 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 80W Tc | 35 ns | Tin | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 3A Tc | -55°C~150°C TJ | Tape & Reel (TR) | SuperMESH™ | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 3.5Ohm | 雪崩 额定 | 800V | 鸥翼 | 260 | 3A | 30 | STD4N | 3 | R-PSSO-G2 | 1 | Single | 增强型MOSFET | 80W | 13 ns | N-Channel | SWITCHING | 3.5 Ω @ 1.5A, 10V | 4.5V @ 50μA | 575pF @ 25V | 22.5nC @ 10V | 12ns | ±30V | 32 ns | 1.5A | 3V | TO-252AA | 30V | 3A | 800V | 150°C | 2.63mm | 6.6mm | 6.2mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||
| STP55NF06L | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V 5V | 1 | 95W Tc | 40 ns | ACTIVE (Last Updated: 8 months ago) | 通孔 | 通孔 | TO-220-3 | 3 | 4.535924g | SILICON | 55A Tc | -55°C~175°C TJ | Tube | STripFET™ II | e3 | 活跃 | 1 (Unlimited) | 3 | EAR99 | 18mOhm | Matte Tin (Sn) | 60V | 55A | STP55N | 3 | Single | 增强型MOSFET | 95W | DRAIN | 20 ns | N-Channel | SWITCHING | 18m Ω @ 27.5A, 10V | 1.7V @ 250μA | 1700pF @ 25V | 37nC @ 4.5V | 100ns | ±16V | 20 ns | 55A | 1.7V | TO-220AB | 16V | 60V | 220A | 1.7 V | 9.15mm | 10.4mm | 4.6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
| STH12N120K5-2 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | 10V | 1 | 250W Tc | 68.5 ns | ACTIVE (Last Updated: 7 months ago) | Tin | 表面贴装 | 表面贴装 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | SILICON | H2PAK-2-8159712 | 12A Tc | -55°C~150°C TJ | Cut Tape (CT) | MDmesh™ K5 | e3 | 活跃 | 1 (Unlimited) | 2 | EAR99 | SINGLE | 鸥翼 | 245 | not_compliant | 未说明 | STH12N | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | 1 | 增强型MOSFET | 250W | DRAIN | 23 ns | N-Channel | SWITCHING | 690m Ω @ 6A, 10V | 5V @ 100μA | 1370pF @ 100V | 44.2nC @ 10V | 11ns | 1200V | ±30V | 18.5 ns | 12A | 30V | 0.69Ohm | 1.2kV | 48A | 150°C | 5mm | ROHS3 Compliant | |||||||||||||||||||||||
| STD4NK100Z | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 10V | 1 | 90W Tc | 32 ns | 表面贴装 | 表面贴装 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3 | SILICON | 2.2A Tc | -55°C~150°C TJ | Cut Tape (CT) | Automotive, AEC-Q101, SuperMESH™ | 活跃 | 1 (Unlimited) | 2 | EAR99 | SINGLE | 鸥翼 | 未说明 | 未说明 | STD4N | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | 1 | 增强型MOSFET | 90W | DRAIN | 15 ns | N-Channel | SWITCHING | 6.8 Ω @ 1.1A, 10V | 4.5V @ 50μA | 601pF @ 25V | 18nC @ 10V | 1000V | ±30V | 2.2A | 30V | 1kV | 8.8A | 150°C | 2.63mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||
 | STL42P6LLF6 | STMicroelectronics | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | 4.5V 10V | 1 | 100W Tc | 171 ns | ACTIVE (Last Updated: 8 months ago) | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | SILICON | PowerFLAT5x6-A0ER_8231817 | 42A Tc | 175°C TJ | Cut Tape (CT) | STripFET™ F6 | e3 | 活跃 | 1 (Unlimited) | 5 | EAR99 | Matte Tin (Sn) | DUAL | 260 | not_compliant | 未说明 | STL42 | R-PDSO-F5 | 1 | Single | 增强型MOSFET | 4.8W | DRAIN | 51.4 ns | P-Channel | SWITCHING | 26m Ω @ 4.5A, 10V | 2.5V @ 250μA | 3780pF @ 25V | 30nC @ 4.5V | 60V | ±20V | -42A | 20V | 0.034Ohm | -60V | 175°C | 1mm | 6.35mm | 5.4mm | ROHS3 Compliant | 无铅 |