制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 输出电压 | 输出电流 | 输入类型 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 负供电电压 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | |||
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 | HIP2101IRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 0.8V 2.2V | Industrial grade | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tray | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) - annealed | 9V~14V | HIP2101 | 16 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | ||||||||||||||||||||||||||
 | ISL89164FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89164 | 8 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||
| ISL89165FRTBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.85V 3.15V | Industrial grade | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89165 | 8 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||
 | HIP2101IR4Z | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 0.8V 2.2V | 表面贴装 | 12-VFDFN Exposed Pad | YES | Half-Bridge | -55°C~150°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | 12 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.5mm | 未说明 | HIP2101 | 12 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.056 µs | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1mm | 4mm | 4mm | ROHS3 Compliant | |||||||||||
| EL7457CLZ-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2V | Industrial grade | 表面贴装 | 16-VQFN Exposed Pad | YES | High-Side or Low-Side | -40°C~85°C TA | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~18V | QUAD | 无铅 | 未说明 | 4 | 5V | 0.65mm | 未说明 | EL7457 | 16 | S-PQCC-N16 | Non-Inverting | 13.5ns 13ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 4 | -5V | N-Channel, P-Channel MOSFET | 2A 2A | YES | 1.03mm | ROHS3 Compliant | ||||||||||||
 | ISL89165FBEAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | 2010 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89165 | 8 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||
 | EL7104CNZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 0.8V 2.4V | Industrial grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Low-Side | -40°C~125°C TJ | Bulk | 2002 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | 未说明 | 1 | 15V | 2.54mm | 未说明 | EL7104 | 8 | R-PDIP-T8 | Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 25 μs | 4A | N-Channel, P-Channel MOSFET | 4A 4A | NO | 25 μs | 5.334mm | 9.525mm | 7.62mm | ROHS3 Compliant | ||||||||
 | ISL2101AAR3Z | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.4V 2.2V | 表面贴装 | 9-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | 活跃 | 2 (1 Year) | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | 未说明 | 未说明 | ISL2101A | 9 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | ||||||||||||||||||||||||
| ISL89165FBEBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1.85V 3.15V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89165 | 8 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||
| ISL89165FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.22V 2.08V | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89165 | 8 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||
| ISL89163FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89163 | 8 | Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||
 | ISL78444AVEZ-T7A | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1V 2.1V | 表面贴装 | 14-TSSOP (0.173, 4.40mm Width) Exposed Pad | Half-Bridge | -40°C~140°C TJ | Tape & Reel (TR) | ISL78444 | 活跃 | 3 (168 Hours) | 8V~18V | 14 | Non-Inverting | 10ns 10ns | Synchronous | 2 | N-Channel MOSFET | 3A 4A | 100V | ROHS3 Compliant | |||||||||||||||||||||||||||||
| ISL78424AVEZ-T7A | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1V 2.1V | 表面贴装 | 14-TSSOP (0.173, 4.40mm Width) Exposed Pad | Half-Bridge | -40°C~140°C TJ | Tape & Reel (TR) | ISL78424 | 活跃 | 3 (168 Hours) | 8V~18V | 14 | Inverting, Non-Inverting | 10ns 10ns | Synchronous | 2 | N-Channel MOSFET | 3A 4A | 100V | ROHS3 Compliant | |||||||||||||||||||||||||||||
| ISL78434AVEZ-T7A | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1V 2.1V | 表面贴装 | 14-TSSOP (0.173, 4.40mm Width) Exposed Pad | Half-Bridge | -40°C~140°C TJ | Tape & Reel (TR) | ISL78434 | 活跃 | 3 (168 Hours) | 8V~18V | 14 | Inverting, Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 3A 4A | 100V | ROHS3 Compliant | |||||||||||||||||||||||||||||
| ISL89164FRTBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.85V 3.15V | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89164 | 8 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||
 | HIP2101EIBZT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 0.8V 2.2V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | YES | Half-Bridge | -55°C~150°C TJ | Cut Tape (CT) | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | DUAL | 鸥翼 | 260 | 1 | 12V | 30 | HIP2101 | 8 | R-PDSO-G8 | 不合格 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.056 µs | 2A | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1.68mm | 4.89mm | 3.9mm | ROHS3 Compliant | ||||||||
 | HIP2101IBZT7A | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 0.8V 2.2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | Matte Tin (Sn) | 9V~14V | HIP2101 | 8 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | |||||||||||||||||||||||||||
 | EL7242CS | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | 鸥翼 | 未说明 | 2 | 15V | 未说明 | EL7242 | 8 | R-PDSO-G8 | Inverting, Non-Inverting | 10ns 10ns | 和基于栅极的mosfet驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 3.9116mm | Non-RoHS Compliant | |||||||||||||||
| ISL6613BEIBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6613B | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
| ISL2110AR4Z | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3.7V 7.4V | Industrial grade | 表面贴装 | 12-VFDFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 2 (1 Year) | 12 | 哑光锡 | 8V~14V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.5mm | 未说明 | ISL2110 | 12 | Non-Inverting | 9ns 7.5ns | Independent | 2 | 0.06 µs | N-Channel MOSFET | 3A 4A | YES | 0.06 µs | 114V | 1mm | 4mm | 4mm | ROHS3 Compliant | ||||||||||
 | ISL6612CRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Cut Tape (CT) | 2001 | e3 | 活跃 | 2 (1 Year) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | 10 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||
| ISL6612CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
| ISL6612BIRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | Obsolete | 2 (1 Year) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6612B | 10 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6614ACRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Commercial grade | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | ISL6614A | 16 | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
 | HIP4080AIBZT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 1V 2.5V | Industrial grade | 表面贴装 | 20-SOIC (0.295, 7.50mm Width) | Half-Bridge | -40°C~125°C TJ | Cut Tape (CT) | e3 | 活跃 | 2 (1 Year) | Matte Tin (Sn) | 9.5V~15V | 未说明 | 未说明 | HIP4080A | 20 | 950mV | 2.6A | Non-Inverting | 10ns 10ns | 全桥mosfet驱动器 | Synchronous | 4 | N-Channel MOSFET | 2.6A 2.4A | 95V | ROHS3 Compliant |