制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出电压 | 输出电流 | 输入类型 | 上升时间 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 负供电电压 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | |||
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 | EL7212CSZ-T7 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Cut Tape (CT) | 2002 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 未说明 | EL7212 | 8 | R-PDSO-G8 | Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | ROHS3 Compliant | ||||||||||||
 | ISL6208BIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.5V 2V | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | 哑光锡 | 4.5V~5.5V | 未说明 | 未说明 | ISL6208 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||||
| EL7158ISZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~125°C TJ | Tube | 2003 | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~12V | 未说明 | 未说明 | EL7158 | 8 | 12V | 12A | Non-Inverting | 12ns 12.2ns | 基于半桥的外设驱动器 | Single | 1 | IGBT | 12A 12A | ROHS3 Compliant | ||||||||||||||||||||
| EL7155CSZ-T7 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | 2002 | e3 | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 4.5V~16.5V | 未说明 | 未说明 | EL7155 | 8 | 16V | 200mA | Non-Inverting | 14.5ns 15ns | 基于半桥的外设驱动器 | Synchronous | 2 | IGBT | 3.5A 3.5A | ROHS3 Compliant | ||||||||||||||||||||
| EL7155CSZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 4.5V~16.5V | 未说明 | 未说明 | EL7155 | 8 | 16.5V | Non-Inverting | 14.5ns 15ns | 基于半桥的外设驱动器 | Synchronous | 2 | IGBT | 3.5A 3.5A | ROHS3 Compliant | ||||||||||||||||||||||
 | ISL2100AAR3Z | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3.7V 7.4V | Industrial grade | 表面贴装 | 9-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | 活跃 | 2 (1 Year) | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | 未说明 | 未说明 | ISL2100A | 9 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | |||||||||||||||||||||||
 | ISL89166FBEAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89166 | Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||||
 | ISL95808HRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | Commercial grade | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | -10°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 1 (Unlimited) | 哑光锡 | 4.5V~5.5V | 未说明 | 未说明 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||||
 | HIP6601BCBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP6601B | 8 | R-PDSO-G8 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||
| ISL6612AIBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6208CRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.5V 2V | Commercial grade | 表面贴装 | 8-VQFN Exposed Pad | Half-Bridge | -10°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 1 (Unlimited) | Matte Tin (Sn) | 4.5V~5.5V | 未说明 | 未说明 | ISL6208 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||
 | EL7457CSZ-T7 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2V | Industrial grade | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | -40°C~85°C TA | Cut Tape (CT) | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~18V | DUAL | 鸥翼 | 未说明 | 4 | 5V | 1.27mm | 未说明 | EL7457 | 16 | R-PDSO-G16 | Non-Inverting | 13.5ns 13ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 4 | -5V | N-Channel, P-Channel MOSFET | 2A 2A | YES | 1.879mm | 9.9mm | 3.91mm | ROHS3 Compliant | ||||||||||
| EL7212CSZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Tube | 2002 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 未说明 | EL7212 | 8 | R-PDSO-G8 | 16.5V | Inverting | 7.5ns | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | ROHS3 Compliant | ||||||||||
| ICL7667CBAZA | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2V | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | 0°C~70°C TA | Tube | 1999 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 2 | 未说明 | ICL7667 | 8 | R-PDSO-G8 | 15V | Inverting | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | NO | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||
| EL7104CSZ-T7 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Cut Tape (CT) | 2002 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | EL7104 | 8 | R-PDSO-G8 | Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 25 μs | 4A | N-Channel, P-Channel MOSFET | 4A 4A | NO | 25 μs | 4.9mm | ROHS3 Compliant | ||||||||||
| ISL2111ABZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1.4V 2.2V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 1 (Unlimited) | 8 | Matte Tin (Sn) | 8V~14V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | ISL2111 | 8 | R-PDSO-G8 | Non-Inverting | 9ns 7.5ns | Independent | 2 | 0.06 μs | N-Channel MOSFET | 3A 4A | YES | 0.06 μs | 114V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||
| EL7104CSZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Tube | 2002 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | EL7104 | 8 | R-PDSO-G8 | 16.5V | Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 25 μs | 4A | N-Channel, P-Channel MOSFET | 4A 4A | NO | 25 μs | 4.9mm | ROHS3 Compliant | |||||||||
 | ISL2111ARTZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.4V 2.2V | Industrial grade | 表面贴装 | 10-WDFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 2 (1 Year) | 10 | Matte Tin (Sn) | 8V~14V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.8mm | 未说明 | ISL2111 | 10 | S-PDSO-N10 | Non-Inverting | 9ns 7.5ns | Independent | 2 | 0.06 µs | N-Channel MOSFET | 3A 4A | YES | 0.06 µs | 114V | 0.75mm | 4mm | 4mm | ROHS3 Compliant | |||||||||
| ISL6612ACBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
| ISL6700IBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2.2V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 1 (Unlimited) | 8 | 哑光锡 | 9V~15V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | ISL6700 | 8 | R-PDSO-G8 | 75V | 1.25A | Non-Inverting | 5ns 5ns | 全桥mosfet驱动器 | Independent | 2 | 0.095 μs | N-Channel MOSFET | 1.4A 1.3A | YES | 0.09 μs | 80V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||
| EL7202CSZ-T7 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Cut Tape (CT) | 2002 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 未说明 | EL7202 | 8 | R-PDSO-G8 | Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | ROHS3 Compliant | ||||||||||||
| EL7154CSZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 0.6V 2.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | 未说明 | 未说明 | EL7154 | 8 | Non-Inverting | 4ns 4ns | 基于缓冲器或反相器的外设驱动器 | Synchronous | 2 | IGBT, N-Channel MOSFET | 4A 4A | ROHS3 Compliant | ||||||||||||||||||||||||
| ISL6609IBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 鸥翼 | 未说明 | 1 | 5V | 未说明 | ISL6609 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | YES | 36V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||
 | ISL83204AIPZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 79 Weeks | 1V 2.5V | Industrial grade | 通孔 | 20-DIP (0.300, 7.62mm) | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | EAR99 | 9.5V~15V | 未说明 | 未说明 | ISL83204A | 20 | 86.3V | Inverting, Non-Inverting | 10ns 10ns | 全桥mosfet驱动器 | Synchronous | 4 | N-Channel MOSFET | 2.6A 2.4A | 75V | ROHS3 Compliant | |||||||||||||||||||||||
| ISL2100AABZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3.7V 7.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | EAR99 | 9V~14V | unknown | ISL2100A | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant |