制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 操作温度 | 包装 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | JESD-30代码 | 输入类型 | 输出特性 | 输出极性 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 高压侧电压-最大值(自举) | 输出电流流向 | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | ||
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 | EL7222CS-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.4V | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | 4.5V~15V | DUAL | 鸥翼 | 1 | EL7222 | R-PDSO-G8 | Inverting, Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 4.9mm | 3.911mm | Non-RoHS Compliant | ||||||||||||||||
| EL7154CS-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.6V 2.4V | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4.5V~16V | EL7154 | Non-Inverting | 4ns 4ns | Synchronous | 2 | IGBT, N-Channel MOSFET | 4A 4A | Non-RoHS Compliant | ||||||||||||||||||||||||||
| EL7158IS-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.4V | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | 4.5V~12V | DUAL | 鸥翼 | 1 | 12V | EL7158 | R-PDSO-G8 | Non-Inverting | 3-STATE | TRUE | 触发器 | 12ns 12.2ns | 基于半桥的外设驱动器 | Single | 1 | 12A | IGBT | 12A 12A | 水槽 | 4.9mm | Non-RoHS Compliant | |||||||||||||
 | EL7457CL-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2V | 16-VQFN Exposed Pad | High-Side or Low-Side | -40°C~85°C TA | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4.5V~18V | EL7457 | Non-Inverting | 13.5ns 13ns | Independent | 4 | N-Channel, P-Channel MOSFET | 2A 2A | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | EL7457CU-T7 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2V | 16-SSOP (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~85°C TA | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4.5V~18V | EL7457 | Non-Inverting | 13.5ns 13ns | Independent | 4 | N-Channel, P-Channel MOSFET | 2A 2A | Non-RoHS Compliant | |||||||||||||||||||||||||||
| EL7155CS-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.4V | 8-SOIC (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4.5V~16.5V | EL7155 | Non-Inverting | 14.5ns 15ns | Synchronous | 2 | IGBT | 3.5A 3.5A | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | HIP2100EIBT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 4V 7V | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 9V~14V | HIP2100 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | Non-RoHS Compliant | ||||||||||||||||||||||||||
| HIP2101IRT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.2V | 16-VQFN Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 9V~14V | HIP2101 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | HIP2101IR4T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.2V | 12-VFDFN Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 9V~14V | HIP2101 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | Non-RoHS Compliant | ||||||||||||||||||||||||||
| HIP2100IRT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 4V 7V | 16-VQFN Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 9V~14V | HIP2100 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | EL7412CM | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.4V | 20-SOIC (0.295, 7.50mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 4.5V~15V | unknown | EL7412 | Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 4 | N-Channel, P-Channel MOSFET | 2A 2A | Non-RoHS Compliant | |||||||||||||||||||||||||
| EL7156CS-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 0.8V 2.4V | 8-SOIC (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4.5V~16.5V | EL7156 | Non-Inverting | 14.5ns 15ns | Single | 1 | IGBT | 3.5A 3.5A | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | HIP6601BECB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP6601B | R-PDSO-G8 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1.68mm | 4.89mm | 3.9mm | Non-RoHS Compliant | ||||||||||||
| HIP6601BECB-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8-SOIC-EP | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | Obsolete | 2 (1 Year) | 10.8V~13.2V | HIP6601B | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | 15V | Non-RoHS Compliant | |||||||||||||||||||||||||||
| HIP6604BCRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 16-VQFN Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tray | e3 | Obsolete | 3 (168 Hours) | 16 | Matte Tin (Sn) | 10.8V~13.2V | QUAD | 无铅 | 未说明 | 1 | 12V | 0.65mm | 未说明 | HIP6604B | S-PQCC-N16 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1mm | 4mm | 4mm | ROHS3 Compliant | ||||||||||||
| HIP6604BCR | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 16-VQFN Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 16 | Matte Tin (Sn) | 10.8V~13.2V | QUAD | 无铅 | 未说明 | 1 | 12V | 0.65mm | 未说明 | HIP6604B | S-PQCC-N16 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1mm | 4mm | 4mm | Non-RoHS Compliant | ||||||||||||
| HIP6604BCR-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 16-VQFN Exposed Pad | 16-QFN (4x4) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 10.8V~13.2V | HIP6604B | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | 15V | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | ISL6209CB-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1.8V 3.1V | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -10°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 4.5V~5.5V | ISL6209 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | Non-RoHS Compliant | ||||||||||||||||||||||||||
 | ISL6207CRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1V 2V | 8-VQFN Exposed Pad | Half-Bridge | -10°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~5.5V | 未说明 | 未说明 | ISL6207 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||
| ISL6605IR-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1V 2V | 8-VQFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | 4.5V~5.5V | QUAD | 无铅 | 1 | 5V | 0.65mm | ISL6605 | S-PQCC-N8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | YES | 33V | 1mm | 3mm | 3mm | Non-RoHS Compliant | ||||||||||||||
| ISL6608CR | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-VQFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 4.5V~5.5V | ISL6608 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 22V | Non-RoHS Compliant | |||||||||||||||||||||||||||
| ISL6605IB-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1V 2V | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 8 | 4.5V~5.5V | DUAL | 鸥翼 | 1 | 5V | ISL6605 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | YES | 33V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||
 | ISL6594BCR | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 0°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 10.8V~13.2V | ISL6594 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | Non-RoHS Compliant | ||||||||||||||||||||||||||
| ISL6605IRZA-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 1V 2V | 8-VQFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | 8 | Matte Tin (Sn) | 4.5V~5.5V | QUAD | 无铅 | 未说明 | 1 | 5V | 0.65mm | 未说明 | ISL6605 | S-PQCC-N8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | YES | 33V | 1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||
| ISL6608IR | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-VQFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 4.5V~5.5V | ISL6608 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 22V | Non-RoHS Compliant |