制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 输入类型 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 高压侧电压-最大值(自举) | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | ||
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 | HIP6601BCBZA-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP6601B | 8 | R-PDSO-G8 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||
| ISL6609CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 4.5V~5.5V | 未说明 | 未说明 | ISL6609 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | 36V | ROHS3 Compliant | ||||||||||||||||||
| ISL6609CBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 1 | 5V | ISL6609 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | YES | 36V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||
 | ISL6612AIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||
 | ISL6612AECBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||
| ISL6612IRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||
| ISL6612IRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||
| ISL6612BCRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6612B | 10 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||
| ISL6612BCBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6612B | 8 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||
| ISL6612EIBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||
 | ISL6614AIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 3 (168 Hours) | 10.8V~13.2V | ISL6614A | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6608CBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 4.5V~5.5V | 未说明 | 未说明 | ISL6608 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 22V | ROHS3 Compliant | ||||||||||||||||||
| ISL6622IBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | ISL6622 | 8 | Non-Inverting | 26ns 18ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||
| ISL6622IBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | ISL6622 | 8 | Non-Inverting | 26ns 18ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||
| ISL6620ACBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | 未说明 | 未说明 | ISL6620 | 8 | Non-Inverting | 8ns 8ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||
| ISL6615ACRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | 2007 | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 6.8V~13.2V | 未说明 | 未说明 | ISL6615 | 10 | Non-Inverting | 13ns 10ns | Synchronous | 2 | N-Channel MOSFET | 2.5A 4A | 36V | ROHS3 Compliant | |||||||||||||||||||
| ISL6615CRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | 10 | Matte Tin (Sn) | 6.8V~13.2V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.5mm | 未说明 | ISL6615 | 10 | S-PDSO-N10 | Non-Inverting | 13ns 10ns | Synchronous | 2 | N-Channel MOSFET | 2.5A 4A | YES | 36V | 1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||
| ISL6609IBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 1 | 5V | ISL6609 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | YES | 36V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||
| ISL6614BIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6614B | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||
| ISL6622ACRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 6.8V~13.2V | 未说明 | 未说明 | ISL6622A | 10 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||
| ISL89400ABZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 3.7V 7.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 9V~14V | 未说明 | 未说明 | ISL89400 | 8 | Non-Inverting | 16ns 16ns | Independent | 2 | N-Channel MOSFET | 1.25A 1.25A | 100V | ROHS3 Compliant | ||||||||||||||||||
| ISL6615ACRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | 10 | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | DUAL | 无铅 | 260 | 1 | 12V | 0.5mm | 未说明 | ISL6615 | 10 | S-PDSO-N10 | 不合格 | Non-Inverting | 13ns 10ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | 6A | N-Channel MOSFET | 2.5A 4A | YES | 36V | 1mm | 3mm | 3mm | ROHS3 Compliant | ||||
| ISL89166FBEAZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89166 | Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||
| ISL6622ACRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 6.8V~13.2V | 未说明 | 未说明 | ISL6622A | 10 | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||
 | ISL89167FRTAZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89167 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant |