制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 输入电压-Nom | 模拟 IC - 其他类型 | 输入类型 | 输入电压(最大) | 输出特性 | 控制技术 | 输出极性 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 开关频率-最大值 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 输出电流流向 | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | |||
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 | ISL6609AIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | 1V 2V | Industrial grade | 表面贴装 | 8-VQFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 4.5V~5.5V | QUAD | 无铅 | 1 | 5V | 0.65mm | ISL6609 | 8 | S-PQCC-N8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | YES | 36V | 1mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||
 | ISL6609AIBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 1V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 1 | 5V | ISL6609 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | - 4A | YES | 36V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||
 | ISL6611ACRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2V | 表面贴装 | 16-VQFN Exposed Pad | 16-QFN (4x4) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 4.5V~5.5V | ISL6611A | Non-Inverting | 8ns 8ns | Synchronous | 4 | N-Channel MOSFET | - 4A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||
 | HIP4083ABZT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 1V 2.5V | Automotive grade | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | 测试结温 | 7V~15V | DUAL | 鸥翼 | 240 | 1 | 12V | 1.27mm | 未说明 | HIP4083 | 16 | R-PDSO-G16 | 不合格 | Inverting | 35ns 30ns | 基于半桥的mosfet驱动器 | 3-Phase | 3 | 0.09 μs | 0.3A | N-Channel MOSFET | YES | 0.08 μs | 95V | 1.75mm | 9.9mm | ROHS3 Compliant | |||||||||||||||
| ISL6611ACRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2V | 表面贴装 | 16-VQFN Exposed Pad | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | 活跃 | 1 (Unlimited) | 16 | Matte Tin (Sn) - annealed | 使用专有相位加倍方案进行调制。 | 4.5V~5.5V | QUAD | 无铅 | 1 | 0.65mm | ISL6611A | 16 | S-PQCC-N16 | 5V | 双开关控制器 | Non-Inverting | 5.5V | 脉宽调制 | 8ns 8ns | 1000kHz | Synchronous | 4 | N-Channel MOSFET | - 4A | 36V | 1mm | ROHS3 Compliant | |||||||||||||||||||||
 | EL7154CSZ-T7 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.6V 2.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | 活跃 | 3 (168 Hours) | 4.5V~16V | EL7154 | Non-Inverting | 4ns 4ns | Synchronous | 2 | IGBT, N-Channel MOSFET | 4A 4A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| EL7154CSZ-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.6V 2.4V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | 未说明 | 未说明 | EL7154 | 8 | Non-Inverting | 4ns 4ns | 基于缓冲器或反相器的外设驱动器 | Synchronous | 2 | IGBT, N-Channel MOSFET | 4A 4A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
| EL7158ISZ-T13 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~12V | DUAL | 鸥翼 | 1 | 12V | EL7158 | 8 | R-PDSO-G8 | Non-Inverting | 3-STATE | TRUE | 触发器 | 12ns 12.2ns | 基于半桥的外设驱动器 | Single | 1 | 12A | IGBT | 12A 12A | 水槽 | 4.9mm | ROHS3 Compliant | ||||||||||||||||||||
 | ISL6208CHRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 36 Weeks | 0.5V 2V | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | -10°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 1 (Unlimited) | EAR99 | 哑光锡 | 4.5V~5.5V | 未说明 | 未说明 | ISL6208 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||||||||||
 | HIP2103FRTAAZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 1.63V 2.06V | 表面贴装 | 8-WDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2010 | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~14V | 260 | 30 | 8 | Non-Inverting | 8ns 2ns | Independent | 2 | N-Channel MOSFET | 1A 1A | 60V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
 | ISL89165FBEAZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89165 | 8 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||||||||
| ISL6615AIBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | e3 | 活跃 | 1 (Unlimited) | 哑光锡 | 6.8V~13.2V | 未说明 | 未说明 | ISL6615 | 8 | Non-Inverting | 13ns 10ns | Synchronous | 2 | N-Channel MOSFET | 2.5A 4A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
 | ISL78420AVEZ-T7A | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 1.8V 4V | 表面贴装 | 14-TSSOP (0.173, 4.40mm Width) Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | Automotive, AEC-Q100 | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 8V~14V | 未说明 | 未说明 | 14 | Non-Inverting | 10ns 10ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
 | ISL89410IP | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | 通孔 | 8-DIP (0.300, 7.62mm) | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~18V | 未说明 | 未说明 | ISL89410 | Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel, P-Channel MOSFET | 2A 2A | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
| ISL6613CBZR5214 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8-SOIC | Half-Bridge | 0°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | 10.8V~13.2V | ISL6613 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
 | ISL89400AR3Z-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3.7V 7.4V | 表面贴装 | 9-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | EAR99 | 哑光锡 | 9V~14V | 未说明 | 未说明 | ISL89400 | 9 | Non-Inverting | 16ns 16ns | Independent | 2 | N-Channel MOSFET | 1.25A 1.25A | 100V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
| ISL6625ACRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 3 (168 Hours) | 哑光锡 | 5.5V~13.2V | 未说明 | 未说明 | ISL6625A | 8 | Non-Inverting | 31ns 18ns | Synchronous | 2 | N-Channel MOSFET | - 3A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
| ISL89401AR3Z-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1.4V 2.2V | 表面贴装 | 9-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | EAR99 | 哑光锡 | 9V~14V | 未说明 | 未说明 | ISL89401 | 9 | Non-Inverting | 16ns 16ns | Independent | 2 | N-Channel MOSFET | 1.25A 1.25A | 100V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
| ISL6625AIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 表面贴装 | 8-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 3 (168 Hours) | 哑光锡 | 5.5V~13.2V | 未说明 | 未说明 | ISL6625A | 8 | Non-Inverting | 31ns 18ns | Synchronous | 2 | N-Channel MOSFET | - 3A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
| ISL89400AR3Z | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 3.7V 7.4V | 表面贴装 | 9-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | 活跃 | 1 (Unlimited) | EAR99 | 哑光锡 | 9V~14V | 未说明 | 未说明 | ISL89400 | 9 | Non-Inverting | 16ns 16ns | Independent | 2 | N-Channel MOSFET | 1.25A 1.25A | 100V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
| ISL2101AAR3Z-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 1.4V 2.2V | Industrial grade | 表面贴装 | 9-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 2 (1 Year) | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | 未说明 | 未说明 | ISL2101A | 9 | Non-Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | |||||||||||||||||||||||||||||||
| ISL6612IB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||
| ISL6700IB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 8 | 9V~15V | DUAL | 鸥翼 | 1 | 12V | ISL6700 | R-PDSO-G8 | Non-Inverting | 5ns 5ns | 全桥mosfet驱动器 | Independent | 2 | 0.095 μs | N-Channel MOSFET | 1.4A 1.3A | YES | 0.09 μs | 80V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||
| ISL6608IB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 4.5V~5.5V | ISL6608 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 22V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||
| HIP2101IR | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 表面贴装 | 16-VQFN Exposed Pad | YES | Half-Bridge | -55°C~150°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 12 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.5mm | 未说明 | HIP2101 | 12 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.056 µs | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1mm | 4mm | 4mm | Non-RoHS Compliant |