制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 输入电压-Nom | 模拟 IC - 其他类型 | 输入类型 | 输入电压(最大) | 控制技术 | 上升/下降时间(Typ) | 接口IC类型 | 开关频率-最大值 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | |||
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 | ICL7667CPA | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | Commercial grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | High-Side or Low-Side | 0°C~70°C TA | Tube | 1999 | Obsolete | 1 (Unlimited) | 8 | 4.5V~15V | DUAL | 2 | ICL7667 | 8 | R-PDIP-T8 | Inverting | 20ns 20ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | NO | 5.33mm | 9.585mm | Non-RoHS Compliant | |||||||||||||||||||||||||
 | HIP4086AB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | 表面贴装 | 24-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tube | 2010 | Obsolete | 1 (Unlimited) | 24 | EAR99 | 8542.39.00.01 | 7V~15V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 1.27mm | 未说明 | HIP4086 | 24 | R-PDSO-G24 | Inverting, Non-Inverting | 20ns 10ns | 3-Phase | 6 | 0.158 μs | N-Channel MOSFET | 500mA 500mA | YES | 0.135 μs | 95V | 15.4mm | 7.5mm | Non-RoHS Compliant | ||||||||||||||||
 | HIP6602BCBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | HIP6602B | Non-Inverting | 20ns 20ns | Synchronous | 4 | N-Channel MOSFET | 15V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||
 | ISL6605CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2V | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | Matte Tin (Sn) | 4.5V~5.5V | DUAL | 鸥翼 | 未说明 | 1 | 5V | 未说明 | ISL6605 | 8 | R-PDSO-G8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | YES | 33V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||
| HIP6601BCBZA | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10.8V~13.2V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | HIP6601B | 8 | R-PDSO-G8 | Non-Inverting | 20ns 20ns | Synchronous | 2 | N-Channel MOSFET | YES | 15V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||
| EL7242CNZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | Industrial grade | 通孔 | 8-DIP (0.300, 7.62mm) | NO | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~16V | DUAL | 未说明 | 2 | 15V | 未说明 | EL7242 | 8 | R-PDIP-T8 | Inverting, Non-Inverting | 10ns 10ns | 和基于栅极的mosfet驱动器 | Independent | 2 | 2A | N-Channel, P-Channel MOSFET | 2A 2A | NO | 5.33mm | 9.585mm | ROHS3 Compliant | ||||||||||||||||||
| HIP4086ABT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | 表面贴装 | 24-SOIC (0.295, 7.50mm Width) | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | EAR99 | 8542.39.00.01 | 7V~15V | 未说明 | 未说明 | HIP4086 | 24 | Inverting, Non-Inverting | 20ns 10ns | 3-Phase | 6 | N-Channel MOSFET | 500mA 500mA | 95V | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
 | ISL6613BIRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 7V~13.2V | 未说明 | 未说明 | ISL6613B | Non-Inverting | 26ns 18ns | 全桥mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||
| ISL6613IRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6613 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||
 | ISL6614AIRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | 10.8V~13.2V | ISL6614A | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
| ISL6610CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Commercial grade | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 2 (1 Year) | 14 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 260 | 1 | 5V | 1.27mm | 30 | ISL6610 | 14 | 不合格 | Non-Inverting | 8ns 8ns | 基于缓冲器或逆变器的MOSFET驱动器 | Synchronous | 4 | 4A | N-Channel MOSFET | - 4A | YES | 36V | 1.75mm | 8.65mm | 3.9mm | ROHS3 Compliant | |||||||||||||||
| ISL6612AIBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||
 | ISL83202IBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 1V 2.5V | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -55°C~150°C TJ | Tube | 1994 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | 哑光锡 | 8.5V~15V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 1.27mm | 未说明 | ISL83202 | 16 | R-PDSO-G16 | Inverting, Non-Inverting | 9ns 9ns | Independent | 4 | 150 μs | 1A | N-Channel MOSFET | 1A 1A | YES | 100 μs | 70V | 1.75mm | 9.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||
| ISL6614CRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 16-VQFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6614 | 16 | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||||||
| ISL89412IBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 0.8V 2.4V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Low-Side | -40°C~125°C TJ | Bulk | 2002 | e3 | 活跃 | 3 (168 Hours) | EAR99 | 哑光锡 | 4.5V~18V | 未说明 | 未说明 | ISL89412 | 8 | Inverting, Non-Inverting | 7.5ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel, P-Channel MOSFET | 2A 2A | ROHS3 Compliant | ||||||||||||||||||||||||||
 | ISL2111ARTZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 1.4V 2.2V | 表面贴装 | 10-WDFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 2 (1 Year) | 10 | Matte Tin (Sn) | 8V~14V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.8mm | 未说明 | ISL2111 | 10 | S-PDSO-N10 | Non-Inverting | 9ns 7.5ns | Independent | 2 | 0.06 μs | N-Channel MOSFET | 3A 4A | YES | 0.06 μs | 114V | 0.75mm | 4mm | 4mm | ROHS3 Compliant | ||||||||||||||
| ISL6612CRZR5238 | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | 10-DFN (3x3) | Half-Bridge | 0°C~125°C TJ | Tube | Obsolete | 3 (168 Hours) | 10.8V~13.2V | ISL6612 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||
 | ISL89165FBECZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 2.4V 9.6V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | 8-SOIC-EP | Low-Side | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 7.5V~16V | ISL89165 | Inverting, Non-Inverting | 20ns 20ns | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
| ISL6611AIRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | 表面贴装 | 16-VQFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 16 | 使用专有相位加倍方案进行调制。 | 4.5V~5.5V | QUAD | 无铅 | 1 | 0.65mm | ISL6611A | S-PQCC-N16 | 5V | 双开关控制器 | Non-Inverting | 5.5V | 脉宽调制 | 8ns 8ns | 1000kHz | Synchronous | 4 | N-Channel MOSFET | - 4A | 36V | 1mm | ROHS3 Compliant | |||||||||||||||||||||
 | ISL89161FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89161 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||||||
| ISL89162FBEAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89162 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||||||||
 | ISL89161FBEAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89161 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||||||
| ISL89161FBEBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.85V 3.15V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89161 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | ||||||||||||||||||||||||||||||
| HIP2123FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.4V 2.2V | Industrial grade | 表面贴装 | 10-WDFN Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tube | Obsolete | 2 (1 Year) | 8V~14V | HIP2123 | Inverting | 10ns 10ns | Independent | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||
| HIP2121FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.4V 2.2V | 表面贴装 | 10-WDFN Exposed Pad | Half-Bridge | -55°C~150°C TJ | Tube | e3 | Obsolete | 2 (1 Year) | EAR99 | Matte Tin (Sn) | 8V~14V | 未说明 | 未说明 | HIP2121 | Inverting | 10ns 10ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 114V | ROHS3 Compliant |