制造商是'Renesas'
Renesas PMIC - 栅极驱动器
(896)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 安装类型 | 包装/外壳 | 表面安装 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 输出电压 | 输入类型 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 负供电电压 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 高压侧电压-最大值(自举) | 输出电流流向 | 座位高度(最大) | 长度 | 宽度 | RoHS状态 | |||
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 | ISL6613ACRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6613A | 10 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
 | EL7457CSZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 0.8V 2V | Industrial grade | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | -40°C~85°C TA | Tube | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~18V | DUAL | 鸥翼 | 未说明 | 4 | 5V | 1.27mm | 未说明 | EL7457 | 16 | R-PDSO-G16 | 16.5V | Non-Inverting | 13.5ns 13ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 4 | -5V | N-Channel, P-Channel MOSFET | 2A 2A | YES | 1.879mm | 9.9mm | 3.91mm | ROHS3 Compliant | ||||||||
 | ISL6208CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 0.5V 2V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -10°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 3 (168 Hours) | 哑光锡 | 4.5V~5.5V | 未说明 | 未说明 | ISL6208 | 8 | Non-Inverting | 8ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 33V | ROHS3 Compliant | |||||||||||||||||||||||
| ISL6622CBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | 未说明 | 未说明 | ISL6622 | 8 | Non-Inverting | 26ns 18ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||
 | ISL89167FBEAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89167 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||
 | ISL89168FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89168 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL89166FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89166 | Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL89167FRTAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-WDFN Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89167 | Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6620CRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | 未说明 | 未说明 | ISL6620 | 10 | Non-Inverting | 8ns 8ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||
 | HIP4080AIB | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1V 2.5V | 表面贴装 | 20-SOIC (0.295, 7.50mm Width) | Half-Bridge | -40°C~125°C TJ | Tube | 2004 | Obsolete | 1 (Unlimited) | 9.5V~15V | HIP4080A | 20 | Non-Inverting | 10ns 10ns | 全桥mosfet驱动器 | Synchronous | 4 | N-Channel MOSFET | 2.6A 2.4A | 95V | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | EL7156CNZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.4V | 通孔 | 8-DIP (0.300, 7.62mm) | NO | High-Side or Low-Side | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.5V~16.5V | DUAL | 1 | 5V | 2.54mm | EL7156 | R-PDIP-T8 | 16.5V | Non-Inverting | 14.5ns 15ns | 基于半桥的外设驱动器 | Single | 1 | -5V | 3.5A | IGBT | 3.5A 3.5A | 水槽 | 5.334mm | 9.525mm | 7.62mm | ROHS3 Compliant | |||||||||||||||
| ISL6612AIRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | Matte Tin (Sn) | 10.8V~13.2V | 未说明 | 未说明 | ISL6612A | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||
 | ISL6612ECBZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | Obsolete | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | 未说明 | 未说明 | ISL6612 | 8 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6613IRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | Industrial grade | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | Obsolete | 1 (Unlimited) | EAR99 | 10.8V~13.2V | 未说明 | 未说明 | ISL6613 | Non-Inverting | 26ns 18ns | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||||
 | HIP2101IRZT | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 0.8V 2.2V | Industrial grade | 表面贴装 | 16-VQFN Exposed Pad | YES | Half-Bridge | -55°C~150°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) - annealed | 9V~14V | QUAD | 无铅 | 260 | 1 | 12V | 0.8mm | 30 | HIP2101 | 16 | S-XQCC-N16 | 不合格 | Non-Inverting | 10ns 10ns | Independent | 2 | 0.056 µs | 2A | N-Channel MOSFET | 2A 2A | YES | 0.056 µs | 114V | 1mm | 5mm | 5mm | ROHS3 Compliant | ||||||
 | ISL2111BR4Z-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 19 Weeks | 1.4V 2.2V | 表面贴装 | 8-VDFN Exposed Pad | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2001 | e3 | 活跃 | 2 (1 Year) | 8 | Matte Tin (Sn) | 8V~14V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.8mm | 未说明 | ISL2111 | 8 | S-PDSO-N8 | Non-Inverting | 9ns 7.5ns | Independent | 2 | 0.06 μs | N-Channel MOSFET | 3A 4A | YES | 0.06 μs | 114V | 1mm | 4mm | 4mm | ROHS3 Compliant | |||||||||
 | ISL6614ACBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 10.8V~13.2V | ISL6614A | 14 | Non-Inverting | 26ns 18ns | Synchronous | 4 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
| ISL6622IRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | ISL6622 | 10 | Non-Inverting | 26ns 18ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6208IBZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 0.5V 2V | Commercial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | DUAL | 鸥翼 | 260 | 1 | 5V | 30 | ISL6208 | 8 | R-PDSO-G8 | 不合格 | Non-Inverting | 8ns 8ns | Synchronous | 2 | 0.03 µs | 4A | N-Channel MOSFET | 2A 2A | YES | 33V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||
| ISL6622CRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | ISL6622 | 10 | Non-Inverting | 26ns 18ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6620CRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | 0°C~125°C TJ | Tube | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) - annealed | 4.5V~5.5V | ISL6620 | 10 | Non-Inverting | 8ns 8ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | ||||||||||||||||||||||||||
| ISL6622IRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) - annealed | 6.8V~13.2V | ISL6622 | 10 | Non-Inverting | 26ns 18ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 1.25A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL89168FBEAZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 1.22V 2.08V | Industrial grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) Exposed Pad | Low-Side | -40°C~125°C TJ | Tube | e3 | Obsolete | 1 (Unlimited) | Matte Tin (Sn) | 4.5V~16V | 未说明 | 未说明 | ISL89168 | Inverting, Non-Inverting | 20ns 20ns | 和基于栅极的mosfet驱动器 | Independent | 2 | N-Channel MOSFET | 6A 6A | ROHS3 Compliant | |||||||||||||||||||||||||
| ISL6620IRZ-T | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | e3 | 活跃 | 3 (168 Hours) | EAR99 | Matte Tin (Sn) - annealed | 4.5V~5.5V | 未说明 | 未说明 | ISL6620 | 10 | Non-Inverting | 8ns 8ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant | |||||||||||||||||||||||
| ISL6620IRZ | Renesas Electronics America Inc. | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 5 Weeks | 表面贴装 | 10-VFDFN Exposed Pad | Half-Bridge | -40°C~125°C TJ | Tube | 2001 | e3 | 活跃 | 3 (168 Hours) | Matte Tin (Sn) - annealed | 4.5V~5.5V | ISL6620 | 10 | Non-Inverting | 8ns 8ns | 和基于栅极的mosfet驱动器 | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 36V | ROHS3 Compliant |