制造商是'Microsemi'
Microsemi 二极管 - 整流器 - 单
(3474)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 引脚数 | 质量 | 二极管元件材料 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 应用 | 附加功能 | HTS代码 | 电压 - 额定直流 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 极性 | 元素配置 | 速度 | 二极管类型 | 反向泄漏电流@ Vr | 输出电流 | 不同 If 时电压 - 正向 (Vf) | 箱体转运 | 正向电流 | 工作温度 - 结点 | 最大浪涌电流 | 输出电流-最大值 | 电压 - 直流逆向（Vr）（最大值） | 平均整流电流（Io） | 正向电压 | 最大反向电压（DC） | 平均整流电流 | 相位的数量 | 反向恢复时间 | 峰值反向电流 | 最大重复反向电压(Vrrm) | Rep Pk反向电压-最大值 | JEDEC-95代码 | 电容@Vr, F | 峰值非恢复性浪涌电流 | 反向电流-最大值 | 最大正向浪涌电流（Ifsm） | 恢复时间 | 反向电压(直流电) | 自然的热阻 | 高度 | 长度 | 宽度 | 辐射硬化 | RoHS状态 | 无铅 | ||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | 1N5615US | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 7 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 表面贴装 | 表面贴装 | SQ-MELF, A | 2 | SILICON | 1 | Bulk | 1997 | e0 | no | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | HIGH RELIABILITY | 8541.10.00.80 | END | 环绕 | 未说明 | not_compliant | 未说明 | 2 | 不合格 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 200V | 1.6V @ 3A | ISOLATED | -65°C~175°C | 1A | 1.6V | 200V | 1A | 150 ns | 500nA | 200V | 45pF @ 12V 1MHz | 30A | 13 °C/W | 有 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||
 | APT15DQ120KG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 31 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Tin | 通孔 | 通孔 | TO-220-2 | 6.000006g | SILICON | 1 | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 1.2kV | 15A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100μA @ 1200V | 15A | 3.3V @ 15A | CATHODE | 15A | -55°C~175°C | 110A | 1200V | 3.3V | 1.2kV | 15A | 1 | 240 ns | 100μA | 1.2kV | TO-220AC | 110A | 21 ns | 1.2kV | 9.19mm | 10.26mm | 4.72mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
 | APT30DQ120BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-2 | 6.500007g | SILICON | 1 | Tube | 1997 | e1 | yes | 活跃 | 1 (Unlimited) | 2 | Tin/Silver/Copper (Sn/Ag/Cu) | 175°C | -55°C | 超快软恢复 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT, HIGH RELIABILITY, SNUBBER DIODE | 1.2kV | 30A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100μA @ 1200V | 30A | 3.3V @ 30A | CATHODE | 30A | -55°C~175°C | 210A | 1200V | 3.4V | 1.2kV | 30A | 1 | 320 ns | 100μA | 1.2kV | 210A | 320 ns | 1.2kV | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
| APT15DQ60KG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-220-2 | 6.000006g | SILICON | 1 | Tube | 1997 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | Pure Matte Tin (Sn) | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 600V | 15A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25μA @ 600V | 15A | 2.4V @ 15A | CATHODE | 15A | -55°C~175°C | 110A | 2V | 600V | 15A | 1 | 19 ns | 25μA | 600V | TO-220AC | 110A | 15 ns | 600V | 9.19mm | 10.26mm | 4.72mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
| APT30DQ100BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-2 | SILICON | 1 | Tube | 1997 | e1 | yes | 活跃 | 1 (Unlimited) | 2 | Tin/Silver/Copper (Sn/Ag/Cu) | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 1kV | 30A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100μA @ 1000V | 30A | 3V @ 30A | CATHODE | 30A | -55°C~175°C | 1000V | 3V | 1kV | 30A | 1 | 295 ns | 100μA | 1kV | 150A | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||
 | APT15DQ60BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-3 | 6.500007g | SILICON | 1 | Tube | e1 | yes | 活跃 | 1 (Unlimited) | 2 | 锡银铜 | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 600V | 15A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 25μA @ 600V | 15A | 2.4V @ 15A | CATHODE | 15A | -55°C~175°C | 110A | 2V | 600V | 15A | 1 | 19 ns | 25μA | 600V | 110A | 15 ns | 600V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||
 | JAN1N5616 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 通孔 | 通孔 | A, Axial | 2 | SILICON | 1 | Bulk | 1997 | Military, MIL-PRF-19500/427 | e0 | no | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 200°C | -55°C | HIGH RELIABILITY | 8541.10.00.80 | WIRE | 2 | MIL-19500 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 500nA @ 400V | 1.3V @ 3A | ISOLATED | -65°C~200°C | 1A | 1.3V | 400V | 1A | 2 μs | 500nA | 400V | 30A | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
 | JANS1N5418 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | B, Axial | 2 | SILICON | 1 | Bulk | Military, MIL-PRF-19500/411 | e0 | 活跃 | 1 (Unlimited) | 2 | Tin/Lead (Sn/Pb) | 175°C | -65°C | 快速恢复能力 | 8541.10.00.80 | WIRE | 2 | MIL-19500/411L | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 400V | 1.5V @ 9A | ISOLATED | -65°C~175°C | 3A | 3A | 1.5V | 1 | 150 ns | 1μA | 400V | 165pF @ 4V | 80A | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
| APT100S20BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-2 | 6.500007g | SILICON | 1 | Tube | e1 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 150°C | -55°C | 高压超快软恢复 | 8541.10.00.80 | 200V | 120A | 3 | R-PSFM-T2 | Standard | Single | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | 2mA @ 200V | 120A | 950mV @ 100A | CATHODE | 120A | -55°C~150°C | 950mV | 200V | 120A | 1 | 70 ns | 2mA | 200V | 1kA | 1kA | 200V | 21.46mm | 16.26mm | 5.31mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||
| APT30D20BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-2 | 2 | SILICON | 1 | Tube | e1 | yes | 活跃 | 1 (Unlimited) | 2 | Tin/Silver/Copper (Sn/Ag/Cu) | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 200V | 30A | 3 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 250μA @ 200V | 30A | 1.3V @ 30A | CATHODE | 30A | -55°C~175°C | 1.3V | 200V | 30A | 1 | 24 ns | 250μA | 200V | 320A | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
| APT60D100BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-2 | 6.500007g | SILICON | 1 | Tube | 1997 | e1 | yes | 活跃 | 1 (Unlimited) | 2 | Tin/Silver/Copper (Sn/Ag/Cu) | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 1kV | 60A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 250μA @ 1000V | 60A | 2.5V @ 60A | CATHODE | 60A | -55°C~175°C | 540A | 1000V | 2.5V | 1kV | 60A | 1 | 280 ns | 250μA | 1kV | 540A | 280 ns | 1kV | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||
| APT60D40BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | Tin | 通孔 | 通孔 | TO-247-2 | 6.500007g | SILICON | 1 | Tube | 1997 | e1 | 活跃 | 1 (Unlimited) | 2 | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 400V | 60A | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 250μA @ 400V | 60A | 1.5V @ 60A | CATHODE | 60A | -55°C~175°C | 600A | 1.3V | 400V | 60A | 1 | 37 ns | 250μA | 400V | 600A | 30 ns | 400V | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||
 | APT15DQ100KG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-220-3 | 6.000006g | SILICON | 1 | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | 纯哑光锡 | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 1kV | 15A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100μA @ 1000V | 15A | 3V @ 15A | CATHODE | 15A | -55°C~175°C | 80A | 1000V | 3.06V | 1kV | 15A | 1 | 235 ns | 100μA | 1kV | TO-220AC | 80A | 235 ns | 1kV | 9.19mm | 10.26mm | 4.72mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||
| APT30DQ100KG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-220-2 | SILICON | 1 | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | 纯哑光锡 | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 1kV | 30A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100μA @ 1000V | 30A | 3V @ 30A | CATHODE | 30A | -55°C~175°C | 1000V | 3V | 1kV | 30A | 1 | 295 ns | 100μA | 1kV | TO-220AC | 150A | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
| APT15D120KG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 27 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-220-3 | 6.000006g | SILICON | 1 | Tube | 1997 | e3 | yes | 活跃 | 1 (Unlimited) | 2 | 纯哑光锡 | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 1.2kV | 15A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 250μA @ 1200V | 15A | 2.5V @ 15A | CATHODE | 15A | -55°C~175°C | 110A | 1200V | 2.5V | 1.2kV | 15A | 1 | 260 ns | 250μA | 1.2kV | TO-220AC | 110A | 260 ns | 1.2kV | 9.19mm | 10.26mm | 4.72mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
 | JAN1N5619 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 通孔 | 通孔 | A, Axial | 2 | SILICON | 1 | Bulk | 1997 | Military, MIL-PRF-19500/429 | e0 | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | 8541.10.00.80 | WIRE | 2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 800V | 1.6V @ 3A | ISOLATED | -65°C~175°C | 1A | 1.6V | 600V | 1A | 250 ns | 500nA | 600V | 30A | 无 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||
 | JAN1N5804 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 3W | IN PRODUCTION (Last Updated: 2 weeks ago) | 通孔 | 通孔 | A, Axial | 2 | SILICON | 1 | Bulk | 1997 | Military, MIL-PRF-19500/477 | e0 | no | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | 超快恢复能力 | HIGH RELIABILITY | 8541.10.00.80 | WIRE | MIL-19500 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 100V | 975mV @ 2.5A | ISOLATED | -65°C~175°C | 975mV | 100V | 2.5A | 1 | 25 ns | 1μA | 100V | 25pF @ 10V 1MHz | 35A | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||
| APT60DQ120BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 29 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-2 | 6.500007g | SILICON | 1 | Tube | 1997 | e1 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Silver/Copper (Sn/Ag/Cu) | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 1.2kV | 60A | 3 | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 100μA @ 1200V | 60A | 3.3V @ 60A | CATHODE | 60A | -55°C~175°C | 540A | 1200V | 3.35V | 1.2kV | 60A | 1 | 320 ns | 100μA | 1.2kV | 540A | 320 ns | 1.2kV | 5.31mm | 21.46mm | 16.26mm | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||
| APT60D20BG | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 25 Weeks | IN PRODUCTION (Last Updated: 1 month ago) | 通孔 | 通孔 | TO-247-2 | SILICON | 1 | Tube | 1997 | e1 | yes | 活跃 | 1 (Unlimited) | 2 | Tin/Silver/Copper (Sn/Ag/Cu) | 175°C | -55°C | 超快软恢复 | 8541.10.00.80 | 200V | 60A | R-PSFM-T2 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 250μA @ 200V | 60A | 1.3V @ 60A | CATHODE | 60A | -55°C~175°C | 1.3V | 200V | 60A | 1 | 31 ns | 250μA | 200V | 600A | 无 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
 | JANTXV1N4150UR-1 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | 表面贴装 | 表面贴装 | DO-213AA | 2 | SILICON | 1 | Bulk | 1999 | Military, MIL-PRF-19500/231 | e0 | no | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | 8541.10.00.70 | END | 环绕 | 2 | Qualified | Single | Small Signal =< 200mA (Io), Any Speed | Standard | 100nA @ 50V | 1V @ 200mA | ISOLATED | 200mA | -65°C~175°C | 200mA DC | 1V | 4 ns | 100nA | 50V | 4A | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||
 | 1N6627 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 通孔 | 通孔 | A, Axial | 2 | SILICON | 1 | Bulk | 1997 | e0 | 活跃 | 1 (Unlimited) | 2 | Tin/Lead (Sn/Pb) | 150°C | -65°C | 超快恢复 | METALLURGICALLY BONDED, HIGH RELIABILITY | 8541.10.00.80 | WIRE | 未说明 | 未说明 | 2 | 不合格 | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 2μA @ 440V | 1.35V @ 2A | ISOLATED | 1.75A | -65°C~150°C | 1.5V | 440V | 1.75A | 1 | 30 ns | 2μA | 440V | 40pF @ 10V 1MHz | 75A | 有 | Non-RoHS Compliant | ||||||||||||||||||||||||||||||
 | JAN1N5554US | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | IN PRODUCTION (Last Updated: 2 weeks ago) | 表面贴装 | 表面贴装 | SQ-MELF, B | 2 | SILICON | 1 | Bulk | 1997 | Military, MIL-PRF-19500/420 | e0 | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | POWER | HIGH RELIABILITY | 8541.10.00.80 | END | 环绕 | 235 | 20 | 2 | MIL-19500 | Qualified | Single | Standard Recovery >500ns, > 200mA (Io) | Standard | 1μA @ 1000V | 1.3V @ 9A | ISOLATED | 5A | -65°C~175°C | 3A | 1000V | 1 | 2 μs | 1μA | 1kV | 1000V | 100A | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||
 | JANTXV1N5623 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | IN PRODUCTION (Last Updated: 4 weeks ago) | 通孔 | 通孔 | A, Axial | 2 | SILICON | 1 | Bulk | 1997 | Military, MIL-PRF-19500/429 | 活跃 | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | 8541.10.00.80 | WIRE | 2 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 1000V | 1.6V @ 3A | ISOLATED | -65°C~175°C | 1A | 1000V | 1.6V | 1kV | 1A | 500 ns | 500nA | 1kV | DO-7 | 15pF @ 12V 1MHz | 30A | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||
 | JANTX1N5802 | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 通孔 | 通孔 | A, Axial | 2 | SILICON | 1 | Bulk | 1997 | Military, MIL-PRF-19500/477 | e0 | no | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 175°C | -65°C | HIGH RELIABILITY | 8541.10.00.80 | WIRE | MIL-19500 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 1μA @ 50V | 875mV @ 1A | ISOLATED | -65°C~175°C | 1A | 975mV | 50V | 1A | 1 | 25 ns | 1μA | 50V | 25pF @ 10V 1MHz | 35A | 无 | Non-RoHS Compliant | |||||||||||||||||||||||||||||||
 | JANTX1N6620US | Microsemi Corporation | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | IN PRODUCTION (Last Updated: 3 weeks ago) | Lead, Tin | 表面贴装 | 表面贴装 | SQ-MELF, A | 2 | SILICON | 1 | Bulk | 1997 | Military, MIL-PRF-19500/585 | e0 | no | 活跃 | 1 (Unlimited) | 2 | EAR99 | Tin/Lead (Sn/Pb) | 150°C | -65°C | 超快恢复 | HIGH RELIABILITY | 8541.10.00.80 | END | 环绕 | 未说明 | 未说明 | 2 | MIL-19500 | Qualified | Single | Fast Recovery =< 500ns, > 200mA (Io) | Standard | 500nA @ 220V | 1.4V @ 1.2A | ISOLATED | 1.2A | -65°C~150°C | 1.6V | 220V | 2A | 1 | 30 ns | 220V | 10pF @ 10V 1MHz | 20A | 0.5μA | Non-RoHS Compliant |