制造商是'Maxim Integrated'
Maxim Integrated 存储器
(539)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 内存大小 | 工作电源电流 | 负载电容 | 操作模式 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | 并行/串行 | 耐力 | 写入周期时间 - 最大值 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |
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 | DS1225AB-150IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.75V~5.25V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1225A | 28 | 不合格 | 5.25V | 5V | 4.75V | 64Kb 8K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 8KX8 | 8 | 150ns | 0.01A | 65536 bit | 150 ns | ROHS3 Compliant | ||||||||||||||||||||||
 | DS1330WP-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | Non-Volatile | 0°C~70°C TA | Tray | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | EAR99 | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 3V~3.6V | DUAL | 未说明 | 1 | 3.3V | 未说明 | DS1330W | 34 | R-XDMA-U34 | 不合格 | 3.6V | 3.3V | 3V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 150ns | 0.00025A | 262144 bit | 150 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
| DS1245WP-100IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | 34 | Non-Volatile | -40°C~85°C TA | Tray | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | 3A991.B.2.A | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 3V~3.6V | DUAL | 245 | 1 | 3.3V | 40 | DS1245W | 34 | 3.3V | 3.6V | 3V | 1Mb 128K x 8 | 50mA | NVSRAM | Parallel | 8b | 128KX8 | 8 | 100ns | 1 Mb | 0.00025A | 100 ns | 无 | ROHS3 Compliant | |||||||||||||||||||||||
 | DS1250Y-100IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 32-DIP Module (0.600, 15.24mm) | NO | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 32 | 3A991.B.2.A | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | 未说明 | DS1250Y | 32 | R-XDMA-P32 | 不合格 | 5.5V | 5V | 4.5V | 4Mb 512K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 512KX8 | 8 | 100ns | 0.0006A | 4194304 bit | 100 ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| DS1230Y-85+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1230Y | 28 | 不合格 | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 85ns | 0.0006A | 262144 bit | 85 ns | Non-RoHS Compliant | |||||||||||||||||||||||
| DS1345YP-70+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | 34 | Non-Volatile | 0°C~70°C TA | Tray | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | 3A991.B.2.A | Matte Tin (Sn) | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 245 | 1 | 5V | 40 | DS1345Y | 34 | 不合格 | 5.5V | 5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 128KX8 | 8 | 70ns | 0.00015A | 1048576 bit | 70 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
| DS1245Y-70IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 通孔 | 通孔 | 32-DIP Module (0.600, 15.24mm) | 32 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 32 | 3A991.B.2.A | 8473.30.11.40 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 70GHz | DS1245Y | 32 | 5V | 5V | 1Mb 128K x 8 | 85mA | 5pF | NVSRAM | Parallel | 8b | 128KX8 | 70ns | 17b | 1 Mb | 0.0006A | 70 ns | 9.4mm | 43.69mm | 18.8mm | 无 | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| DS1230Y-70+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1230Y | 28 | 不合格 | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 70ns | 0.0006A | 262144 bit | 70 ns | 9.4mm | 38.227mm | 15.24mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| DS1230AB-100+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | Tin | 通孔 | 通孔 | 28-DIP Module (0.600, 15.24mm) | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 8473.30.11.40 | 4.75V~5.25V | DUAL | 1 | 5V | 2.54mm | 100GHz | DS1230AB | 28 | 5V | 5V | 256Kb 32K x 8 | 85mA | 5pF | NVSRAM | Parallel | 8b | 32KX8 | 100ns | 256 kb | 0.0006A | 100 ns | 9.4mm | 39.12mm | 18.8mm | 无 | Unknown | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
 | DS1220AB-100+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 通孔 | 24-DIP Module (0.600, 15.24mm) | NO | 24 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | 哑光锡 | 8542.32.00.41 | 4.75V~5.25V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1220A | 24 | 不合格 | 5.25V | 5V | 4.75V | 16Kb 2K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 2KX8 | 8 | 100ns | 0.01A | 16384 bit | 100 ns | 10.668mm | 33.02mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||
| DS1245WP-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | 3A991.B.2.A | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 3V~3.6V | DUAL | 245 | 1 | 3.3V | not_compliant | 40 | DS1245W | 34 | R-XDMA-U34 | 不合格 | 3.6V | 3.3V | 3V | 1Mb 128K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 128KX8 | 8 | 150ns | 0.00025A | 1048576 bit | 150 ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| DS1245YP-100+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | Non-Volatile | 0°C~70°C TA | Tray | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | 3A991.B.2.A | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 245 | 1 | 5V | not_compliant | 40 | DS1245Y | 34 | R-XDMA-U34 | 不合格 | 5.5V | 5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 128KX8 | 8 | 100ns | 0.0006A | 1048576 bit | 100 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
 | DS1270Y-70IND# | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 14 Weeks | Tin | 通孔 | 通孔 | 36-DIP Module (0.600, 15.24mm) | 36 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | yes | 活跃 | 1 (Unlimited) | 36 | 3A991.B.2.A | 5 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 70GHz | DS1270Y | 36 | 5V | 16Mb 2M x 8 | NVSRAM | Parallel | 8b | 2MX8 | 8 | 70ns | 16 Mb | 70 ns | 10.922mm | 53.213mm | 无 | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||
| DS1265Y-70IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 36-DIP Module (0.600, 15.24mm) | NO | 36 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 36 | 3A991.B.2.A | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 70GHz | DS1265Y | 36 | 5V | 5V | 8Mb 1M x 8 | 85mA | NVSRAM | Parallel | 8b | 1MX8 | 8 | 70ns | 8 Mb | 0.0002A | 70 ns | 无 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||
| DS1230WP-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 34-PowerCap™ Module | NO | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | EAR99 | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 3V~3.6V | DUAL | 245 | 1 | 3.3V | 1.27mm | not_compliant | 40 | DS1230W | 34 | R-XDMA-P34 | 不合格 | 3.6V | 3.3V | 3V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 256KX8 | 8 | 150ns | 0.00025A | 2097152 bit | 150 ns | 25.019mm | 23.495mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||
 | DS2430A+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | NO | 3 | Non-Volatile | -40°C~85°C TA | Bulk | 2002 | e3 | yes | 不用于新设计 | 1 (Unlimited) | 3 | EAR99 | Tin (Sn) | 与Microlan兼容 | BOTTOM | 260 | 1 | 5V | 1.27mm | 30 | DS2430A | 3 | 不合格 | 6V | 2.8V | 256b 32 x 8 | ASYNCHRONOUS | 15μs | EEPROM | 1-Wire® | 256X1 | 1 | 256 bit | SERIAL | 100000 Write/Erase Cycles | 10ms | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| DS1230Y-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1230Y | 28 | 不合格 | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 150ns | 0.0006A | 262144 bit | 150 ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| DS1230Y-120+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1230Y | 28 | 不合格 | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 120ns | 0.0006A | 262144 bit | 120 ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| DS1245Y-120+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 32-DIP Module (0.600, 15.24mm) | NO | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 32 | 3A991.B.2.A | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1245Y | 32 | 不合格 | 5.5V | 5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 128KX8 | 8 | 120ns | 0.0006A | 1048576 bit | 120 ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| DS1245Y-100+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 32-DIP Module (0.600, 15.24mm) | NO | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 32 | 3A991.B.2.A | TIN | 8473.30.11.40 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1245Y | 32 | 不合格 | 5.5V | 5V | 4.5V | 1Mb 128K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 128KX8 | 8 | 100ns | 0.0006A | 1048576 bit | 100 ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
| DS1225AD-200+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1225A | 28 | 不合格 | 5.5V | 5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 8KX8 | 8 | 200ns | 0.01A | 65536 bit | 200 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||
| DS1225AB-200+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 通孔 | 28-DIP Module (0.600, 15.24mm) | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.75V~5.25V | DUAL | 1 | 5V | 2.54mm | 200GHz | DS1225A | 28 | 5V | 5V | 64Kb 8K x 8 | 75mA | NVSRAM | Parallel | 8b | 8KX8 | 200ns | 8b | 64 kb | 0.01A | 200 ns | 9.4mm | 39.12mm | 18.29mm | 无 | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||
| DS1330YP-70+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | Non-Volatile | 0°C~70°C TA | Tube | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 245 | 1 | 5V | 40 | DS1330Y | 34 | R-XDMA-U34 | 不合格 | 5.5V | 5V | 4.5V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 70ns | 0.00015A | 262144 bit | 70 ns | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||
| DS1250ABP-100+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | 34 | Non-Volatile | 0°C~70°C TA | Tray | 2004 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | 3A991.B.2.A | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.75V~5.25V | DUAL | 245 | 1 | 5V | not_compliant | 100GHz | 40 | DS1250AB | 34 | 不合格 | 5V | 5V | 4Mb 512K x 8 | 85mA | ASYNCHRONOUS | NVSRAM | Parallel | 8b | 512KX8 | 8 | 100ns | 4 Mb | 0.0006A | 100 ns | ROHS3 Compliant | 含铅 | ||||||||||||||||||||
| DS1220AD-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 24-DIP Module (0.600, 15.24mm) | NO | 24 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1220A | 24 | 不合格 | 5.5V | 5V | 4.5V | 16Kb 2K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 2KX8 | 8 | 150ns | 0.01A | 16384 bit | 150 ns | ROHS3 Compliant | 无铅 |