制造商是'Maxim Integrated'
Maxim Integrated 存储器
(539)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 端子表面处理 | 附加功能 | HTS代码 | 电压 - 供电 | 端子位置 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 输出电压 | 工作电源电压 | 电源电压-最大值(Vsup) | 电源 | 电源电压-最小值(Vsup) | 界面 | 最大电源电压 | 最小电源电压 | 内存大小 | 工作电源电流 | 负载电容 | 操作模式 | 访问时间 | 内存格式 | 内存接口 | 数据总线宽度 | 组织结构 | 输出特性 | 内存宽度 | 写入周期时间 - 字符、页面 | 地址总线宽度 | 密度 | 待机电流-最大值 | 记忆密度 | 访问时间（最大） | 并行/串行 | I/O类型 | 耐力 | 数据保持时间 | 待机电压-最小值 | 最大结点温度（Tj） | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | DS1230Y-70IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 通孔 | 28-DIP Module (0.600, 15.24mm) | 28 | Non-Volatile | -40°C~85°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 70GHz | DS1230Y | 28 | 5V | 5V | 256Kb 32K x 8 | 85mA | NVSRAM | Parallel | 8b | 32KX8 | 70ns | 15b | 256 kb | 0.0006A | 70 ns | 10.67mm | 39.37mm | 18.8mm | 无 | Unknown | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| DS1230AB-200IND | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | -40°C~85°C TA | Tube | 2002 | e0 | Obsolete | 1 (Unlimited) | 28 | EAR99 | Tin/Lead (Sn/Pb) | 8542.32.00.41 | 4.75V~5.25V | DUAL | 1 | 5V | 2.54mm | 200GHz | DS1230AB | 28 | 5V | 5V | 256Kb 32K x 8 | NVSRAM | Parallel | 8b | 32KX8 | 8 | 200ns | 256 kb | 0.005A | 200 ns | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||
.png) | DS1990A-F5/E4F | Analog Devices Inc./Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 活跃 | Analog Devices Inc./Maxim Integrated | Bulk | * | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DS2505+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | 453.59237mg | Non-Volatile | -40°C~85°C TA | Bulk | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | 与Microlan兼容 | BOTTOM | 260 | 1 | 5V | 2.54mm | 30 | DS2505 | 3 | Serial | 6V | 2.8V | 16Kb 16K x 1 | 5μA | 15μs | EPROM | 1-Wire® | 16KX1 | 1 | 16 kb | COMMON | 4.95mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
 | DS1330ABP-70+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 34-PowerCap™ Module | YES | Non-Volatile | 0°C~70°C TA | Tray | 2010 | e3 | yes | 活跃 | 3 (168 Hours) | 34 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.75V~5.25V | DUAL | 245 | 1 | 5V | 40 | DS1330AB | 34 | R-XDMA-U34 | 不合格 | 5.25V | 5V | 4.75V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 70ns | 0.00015A | 262144 bit | 70 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
| DS2431+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 通孔 | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | 3 | Non-Volatile | -40°C~85°C TA | Bulk | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS | BOTTOM | 260 | 1 | 3.3V | 1.27mm | 30 | DS2431 | 3 | 不合格 | 5V | Serial | 5.25V | 2.8V | 1Kb 256 x 4 | ASYNCHRONOUS | 2μs | EEPROM | 1-Wire® | 1KX1 | 1 kb | 50000 Write/Erase Cycles | 40 | 150°C | 4.95mm | 4.95mm | 3.94mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
 | DS2016-100 | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 24-DIP (0.600, 15.24mm) | NO | 24 | Volatile | -40°C~85°C TA | Tube | 2006 | e0 | Obsolete | 1 (Unlimited) | 24 | EAR99 | 锡铅 | IT CAN ALSO OPERATES AT 3V | 8542.32.00.41 | 2.7V~5.5V | DUAL | 240 | 1 | 5V | 2.54mm | not_compliant | 100GHz | 20 | DS2016 | 24 | 不合格 | 5.5V | 3/5V | 4.5V | 16Kb 2K x 8 | ASYNCHRONOUS | SRAM | Parallel | 2KX8 | 3-STATE | 8 | 100ns | 0.000001A | 16384 bit | 100 ns | COMMON | 2V | 5.08mm | 31.75mm | Non-RoHS Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||
 | DS2502S+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Non-Volatile | -40°C~85°C TA | Tube | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 与Microlan兼容 | 2.8V~6V | DUAL | 260 | 1 | 5V | 1.27mm | 未说明 | DS2502 | 8 | 不合格 | 6V | 3/5V | 1Kb 128 x 8 | ASYNCHRONOUS | EPROM | 1-Wire® | 8 | 1024 bit | 15000 ns | SERIAL | COMMON | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
 | DS2505P+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 6-LSOJ (0.148, 3.76mm Width) | YES | 6 | Non-Volatile | -40°C~85°C TA | Tube | 2000 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 与Microlan兼容 | 8542.32.00.71 | DUAL | 260 | 1 | 5V | 1.27mm | 30 | DS2505 | 6 | 不合格 | 6V | 3/5V | 2.8V | 16Kb 16K x 1 | ASYNCHRONOUS | 15μs | EPROM | 1-Wire® | 1 | SERIAL | COMMON | 1.5mm | 3.94mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
| DS1330ABP-100 | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 34-PowerCap™ Module | YES | 34 | Non-Volatile | 0°C~70°C TA | Tube | 2006 | e0 | Obsolete | 3 (168 Hours) | 34 | EAR99 | 锡铅 | 10 YEARS MINIMUM DATA RETENTION | 8542.32.00.41 | 4.75V~5.25V | DUAL | 240 | 1 | 5V | 100GHz | DS1330AB | 34 | 5V | 5V | 256Kb 32K x 8 | 85mA | NVSRAM | Parallel | 8b | 32KX8 | 8 | 100ns | 256 kb | 0.00015A | 100 ns | 无 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||
| DS2502P-E64+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 6-LSOJ (0.148, 3.76mm Width) | 6 | Non-Volatile | -40°C~85°C TA | Tube | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | 2.8V~6V | DUAL | 260 | 1 | 5V | 1.27mm | 30 | DS2502 | 6 | 3V | 6V | 2.8V | Serial | 1Kb 128 x 8 | EPROM | 1-Wire® | 1KX1 | 1 | 1024 bit | 1.5mm | 3.94mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
| DS1230AB-120+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.75V~5.25V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1230AB | 28 | 不合格 | 5.25V | 5V | 4.75V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 120ns | 0.0006A | 262144 bit | 120 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
| DS1225AD-85+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 通孔 | 通孔 | 28-DIP Module (0.600, 15.24mm) | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | TIN | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 260 | 1 | 5V | 2.54mm | 85GHz | DS1225A | 28 | 5V | 5V | 64Kb 8K x 8 | 75mA | 5pF | NVSRAM | Parallel | 8b | 8KX8 | 85ns | 8b | 64 kb | 0.01A | 85 ns | 10.67mm | 39.37mm | 18.29mm | 无 | Unknown | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| DS1225AD-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1225A | 28 | 不合格 | 5.5V | 5V | 4.5V | 64Kb 8K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 8KX8 | 8 | 150ns | 0.01A | 65536 bit | 150 ns | 10.54mm | 38.865mm | 15.24mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | DS1220AD-100IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | 24-DIP Module (0.600, 15.24mm) | NO | 24 | Non-Volatile | -40°C~85°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1220A | 24 | 不合格 | 5.5V | 5V | 4.5V | 16Kb 2K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 2KX8 | 8 | 100ns | 0.01A | 16384 bit | 100 ns | 10.668mm | 33.02mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||
| DS1230Y-120IND+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 13 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | -40°C~85°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 120GHz | DS1230Y | 28 | 5V | 5V | 256Kb 32K x 8 | 85mA | NVSRAM | Parallel | 8b | 32KX8 | 8 | 120ns | 256 kb | 0.0006A | 120 ns | 无 | Unknown | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
 | DS1245Y-70+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | Tin | 通孔 | 通孔 | 32-DIP Module (0.600, 15.24mm) | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 32 | 3A991.B.2.A | 8473.30.11.40 | 4.5V~5.5V | DUAL | 1 | 5V | 2.54mm | 70GHz | DS1245Y | 32 | 5V | 5V | 1Mb 128K x 8 | 85mA | NVSRAM | Parallel | 8b | 128KX8 | 70ns | 1 Mb | 0.0006A | 70 ns | 10.92mm | 44.19mm | 18.8mm | 无 | Unknown | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| DS1245AB-70+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 通孔 | 32-DIP Module (0.600, 15.24mm) | NO | 32 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 32 | 3A991.B.2.A | 哑光锡 | 8473.30.11.40 | 4.75V~5.25V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1245AB | 32 | 不合格 | 5.25V | 5V | 4.75V | 1Mb 128K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 128KX8 | 8 | 70ns | 0.0006A | 1048576 bit | 70 ns | 10.922mm | 43.053mm | 15.24mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| DS1220AB-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 10 Weeks | 通孔 | 24-DIP Module (0.600, 15.24mm) | NO | 24 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 24 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.75V~5.25V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1220A | 24 | 不合格 | 5.25V | 5V | 4.75V | 16Kb 2K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 2KX8 | 8 | 150ns | 0.01A | 16384 bit | 150 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
| DS1230AB-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2002 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 8473.30.11.40 | 4.75V~5.25V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 未说明 | DS1230AB | 28 | 不合格 | 5.25V | 5V | 4.75V | 256Kb 32K x 8 | ASYNCHRONOUS | NVSRAM | Parallel | 32KX8 | 8 | 150ns | 0.0006A | 262144 bit | 150 ns | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
| DS2502-E64+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6 Weeks | 通孔 | TO-226-3, TO-92-3 (TO-226AA) | NO | 453.59237mg | Non-Volatile | -40°C~85°C TA | Bulk | 2009 | e3 | yes | 活跃 | 1 (Unlimited) | 3 | EAR99 | Matte Tin (Sn) | 8542.32.00.71 | 2.8V~6V | BOTTOM | 260 | 1 | 5V | 30 | DS2502 | 3 | O-PBCY-T3 | 6V | 2.8V | Serial | 1Kb 128 x 8 | 5μA | EPROM | 1-Wire® | 1KX1 | 1 | 1024 bit | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
 | DS2502X1 | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 4-UFBGA, WLBGA | YES | 4 | Non-Volatile | -40°C~85°C TA | Tape & Reel (TR) | 2003 | Obsolete | 1 (Unlimited) | 4 | 2.8V~6V | DS2502 | 3/5V | Serial | 1Kb 128 x 8 | 5μA | EPROM | 1-Wire® | 128X8 | 8 | 1 kb | 15000 ns | COMMON | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||
 | DS1258AB-70 | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 40-DIP Module (0.610, 15.495mm) | NO | 40 | Non-Volatile | 0°C~70°C TA | Tube | 2006 | e0 | no | Obsolete | 1 (Unlimited) | 40 | 3A991.B.2.A | Tin/Lead (Sn/Pb) | 10 YEAR DATA RETENTION | 8542.32.00.41 | 4.75V~5.25V | DUAL | 未说明 | 1 | 5V | 2.54mm | not_compliant | 70GHz | 未说明 | DS1258AB | 40 | 不合格 | 5.25V | 5V | 4.75V | 2Mb 128K x 16 | ASYNCHRONOUS | NVSRAM | Parallel | 16b | 128KX16 | 16 | 70ns | 0.01A | 2097152 bit | 70 ns | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||
 | DS2431G+U | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 4 Weeks | Tin | 表面贴装 | 表面贴装 | 2-SFN | 2 | Non-Volatile | -40°C~85°C TA | Strip | 2003 | e3 | yes | 活跃 | 1 (Unlimited) | 2 | EAR99 | BOTTOM | 225 | 1 | DS2431 | 3/5V | Serial | 5.25V | 2.8V | 1Kb 256 x 4 | 2μs | EEPROM | 1-Wire® | 1KX1 | 1 | 1 kb | 50000 Write/Erase Cycles | 40 | 1mm | 6mm | 6mm | 无 | Unknown | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
| DS1230W-150+ | Maxim Integrated | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 8 Weeks | 通孔 | 28-DIP Module (0.600, 15.24mm) | NO | 28 | Non-Volatile | 0°C~70°C TA | Tube | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 28 | EAR99 | 哑光锡 | 10 YEAR DATA RETENTION | 8473.30.11.40 | 3V~3.6V | DUAL | 1 | 3.3V | 2.54mm | 150GHz | DS1230W | 28 | 3.3V | 3.6V | 3V | 256Kb 32K x 8 | 50mA | NVSRAM | Parallel | 8b | 256KX8 | 8 | 150ns | 256 kb | 0.00025A | 150 ns | 10.668mm | 38.225mm | 无 | ROHS3 Compliant | 无铅 |