制造商是'Infineon'
Infineon PMIC - 栅极驱动器
(1037)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 工作电源电流 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 静态电流 | 输入类型 | 接通延迟时间 | 上升时间 | 下降时间（典型值） | 输出极性 | 发布时间 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 | IRS2127SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 150 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 12V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2127SPBF | 1 | 20V | 600mA | 300μA | 625mW | 200mA | 120μA | 200 ns | 60μA | Non-Inverting | 150 ns | 130ns | 65 ns | 150 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.2 μs | 0.6A | IGBT, N-Channel MOSFET | 290mA 600mA | YES | 0.2 μs | 600V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
 | IR2130STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.2V | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | 活跃 | 3 (168 Hours) | 28 | EAR99 | 8542.39.00.01 | 10V~20V | DUAL | 鸥翼 | 未说明 | 15V | 1.27mm | 未说明 | IR2130SPBF | R-PDSO-G28 | 不合格 | 15V | Inverting | 80ns 35ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 250mA 500mA | 600V | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||
| IR2103SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 0.8V 3V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 最后一次购买 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2103SPBF | R-PDSO-G8 | 不合格 | 15V | Inverting, Non-Inverting | 100ns 50ns | Independent | 2 | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
 | IRS21814STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | 0.8V 2.5V | 35 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21814SPBF | 10V | 2.3A | 240μA | 1W | 1.9A | 240μA | 330 ns | Non-Inverting | 35 ns | 60ns | 35 ns | 40ns 20ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.33 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
 | IRS2110STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 10 ns | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Tin (Sn) | 1.25W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2110SPBF | 10V | 2.5A | 15V | 340μA | 1.25W | 2.5A | 340μA | 160 ns | Non-Inverting | 10 ns | 35ns | 25 ns | 25ns 17ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 2.5A 2.5A | 0.15 μs | TRANSIENT; UNDER VOLTAGE | 500V | 2.3622mm | 10.4902mm | 7.5946mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| IRS2104SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 60 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2104SPBF | 2 | 620V | 600mA | 15V | 270μA | 625mW | 290mA | 270μA | 820 ns | Non-Inverting | 60 ns | 170ns | 90 ns | 150 ns | 70ns 35ns | Synchronous | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| IRS2118SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 105 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2118SPBF | 1 | 620V | 600mA | 340μA | 625mW | 290mA | 340μA | 200 ns | Inverting | 125 ns | 130ns | 65 ns | 105 ns | 75ns 35ns | 基于缓冲器或反相器的外设驱动器 | Single | 0.2 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| IR21364SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 0.8V 2.5V | 50 ns | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 28 | EAR99 | 100Ohm | Matte Tin (Sn) | 8542.39.00.01 | 1.6W | 11.5V~20V | DUAL | 鸥翼 | 1 | 15V | 1.27mm | IR21364SPBF | 350mA | 15V | 1.6W | 200mA | 685 ns | Non-Inverting | 125 ns | 190ns | 75 ns | 125ns 50ns | 3-Phase | 6 | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 2.35mm | 18.0848mm | 7.5946mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| IRS4426STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 50 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2006 | 活跃 | 2 (1 Year) | 8 | EAR99 | 625mW | 6V~20V | DUAL | 鸥翼 | 未说明 | 2 | 15V | 未说明 | IRS4426 | 不合格 | 3.3A | 15V | 625mW | 2.3A | 95 ns | Inverting | 50 ns | 55ns | 55 ns | 25ns 25ns | 基于半桥的外设驱动器 | Independent | 2 | 0.095 μs | IGBT, N-Channel MOSFET | 2.3A 3.3A | 0.095 μs | TRANSIENT | 1.4986mm | 4.9784mm | 3.9878mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||
| IRS21091STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 200 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IRS21091SPBF | 不合格 | 600mA | 15V | 1.6mA | 625mW | 290mA | 1.6mA | 950 ns | Non-Inverting | 70 ns | 220ns | 80 ns | 100ns 35ns | Synchronous | 2 | 0.95 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; THERMAL | 600V | 1.4986mm | 4.9784mm | 3.9878mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| IR2117SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | High-Side | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 6V 9.5V | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2117SPBF | R-PDSO-G8 | 不合格 | Non-Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 600V | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
| IRS23364DSTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 530 ns | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 28 | EAR99 | 100Ohm | Matte Tin (Sn) | 8542.39.00.01 | 1.6W | 11.5V~20V | DUAL | 鸥翼 | 1 | 15V | 1.27mm | IRS23364DSPBF | 不合格 | 350mA | 1.6W | 200mA | 750 ns | Non-Inverting | 530 ns | 190ns | 75 ns | TRUE | STANDARD | 125ns 50ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.75 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 0.75 μs | 600V | 2.3622mm | 18.0848mm | 7.5946mm | ROHS3 Compliant | |||||||||||||||||||||||||
| IR2113SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Half-Bridge | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | 6V 9.5V | -40°C~150°C TJ | Tube | 1996 | e3 | 最后一次购买 | 3 (168 Hours) | 16 | EAR99 | Matte Tin (Sn) | 3.3V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2113SPBF | R-PDSO-G16 | 不合格 | 15V | Non-Inverting | 25ns 17ns | Independent | 2 | 0.15 μs | 2.5A | IGBT, N-Channel MOSFET | 2A 2A | YES | 600V | 10.3mm | 7.5mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||
| IRS21531DSTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 600kHz | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Cut Tape (CT) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~15.4V | DUAL | 鸥翼 | 260 | 1 | 14V | 100kHz | 30 | IRS21531DSPBF | 2 | 260mA | 14V | 5mA | 625mW | 260mA | 5mA | RC输入电路 | 220ns | 80 ns | 120ns 50ns | Synchronous | N-Channel MOSFET | 180mA 260mA | UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
| IRS2183SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 220 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IRS2183SPBF | 2 | 不合格 | 20V | 2.3A | 15V | 1.6mA | 625mW | 1.9A | 1.6mA | 330 ns | Inverting, Non-Inverting | 180 ns | 60ns | 35 ns | 220 ns | 40ns 20ns | Independent | 1.9A | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.33 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||
 | IR2235PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 11 Weeks | 0.8V 2V | 950 ns | 通孔 | 通孔 | 28-DIP (0.600, 15.24mm) | 28 | Half-Bridge | 125°C TJ | Tube | 1996 | 最后一次购买 | 1 (Unlimited) | 28 | EAR99 | 100Ohm | 8542.39.00.01 | 1.5W | 10V~20V | DUAL | 未说明 | 3 | 15V | 2.54mm | 未说明 | IR2235PBF | 不合格 | 300mV | 500mA | 15V | 100μA | 1.5W | 200mA | Inverting | 750 ns | 150ns | 70 ns | 90ns 40ns | 3-Phase | 6 | 1 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.95 μs | 1200V | 5.969mm | 39.7256mm | 14.732mm | ROHS3 Compliant | |||||||||||||||||||||||||||
| IRS4427SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 50 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2006 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 6V~20V | DUAL | 鸥翼 | 2 | 15V | IRS4427SPBF | 2 | 20V | 3.3A | 25V | 15V | 100μA | 625mW | 2.3A | 95 ns | Non-Inverting | 50 ns | 55ns | 55 ns | 25ns 25ns | 基于半桥的外设驱动器 | Independent | 0.095 μs | IGBT, N-Channel MOSFET | 2.3A 3.3A | 0.095 μs | TRANSIENT | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| IRS21844STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 40 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21844SPBF | 10V | 2.3A | 15V | 1.6mA | 1W | 1.9A | 1.6mA | 900 ns | Non-Inverting | 90 ns | 60ns | 35 ns | 40ns 20ns | Synchronous | 2 | 0.9 μs | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.4 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| IR2132STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.2V | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 28 | EAR99 | Matte Tin (Sn) | 8542.39.00.01 | 10V~20V | DUAL | 鸥翼 | 未说明 | 3 | 15V | 1.27mm | 未说明 | IR2132SPBF | R-PDSO-G28 | 不合格 | 15V | Inverting | 80ns 35ns | 3-Phase | 6 | 0.85 µs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.55 µs | 600V | 17.9mm | 7.5mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||
| IR2108STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.9V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2108SPBF | R-PDSO-G8 | 不合格 | Non-Inverting | 150ns 50ns | Independent | 2 | 0.3 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| IR2127STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side or Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 12V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2127SPBF | R-PDSO-G8 | 不合格 | Non-Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | 600V | 4.9mm | 3.9mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
| IR2184STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | yes | 活跃 | 2 (1 Year) | 8 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2184SPBF | R-PDSO-G8 | Non-Inverting | 40ns 20ns | Independent | 2 | 0.9 µs | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.4 µs | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| IRS2186SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 170 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side or Low-Side | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2186SPBF | 2 | 620V | 4A | 15V | 240μA | 625mW | 4A | 240μA | 250 ns | Non-Inverting | 170 ns | 38ns | 30 ns | 22ns 18ns | 基于缓冲器或反相器的外设驱动器 | Independent | 4A | IGBT, N-Channel MOSFET | 4A 4A | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| IRS21834SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 220 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS21834SPBF | 620V | 2.3A | 15V | 1mA | 1W | 1.9A | 1.6mA | 330 ns | Inverting, Non-Inverting | 180 ns | 60ns | 35 ns | 220 ns | 40ns 20ns | Independent | 2 | 1.9A | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.33 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||
| IRS2005SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 2 (1 Year) | EAR99 | 10V~20V | 未说明 | unknown | 未说明 | Non-Inverting | 70ns 30ns | Independent | 2 | IGBT, N-Channel MOSFET | 290mA 600mA | 200V | ROHS3 Compliant |