制造商是'Infineon'
Infineon PMIC - 栅极驱动器
(1037)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 电源 | 最大电源电压 | 最小电源电压 | 元素配置 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 输入类型 | 接通延迟时间 | 最大输出电压 | 无卤素 | 上升时间 | 下降时间（典型值） | 最小输出电压 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 电源电压1-额定值 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 输出电流流向 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | IR21362JTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 3V | 550 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | 44-PLCC, 32 Leads (16.58x16.58) | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | Obsolete | 3 (168 Hours) | 125°C | -40°C | 2W | 11.5V~20V | IR21362JPBF | 3 | 350mA | 20V | 11.5V | 2W | Inverting, Non-Inverting | 550 ns | 190ns | 75 ns | 125ns 50ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 200mA 350mA | 600V | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
| IR2135SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 950 ns | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | 125°C TJ | Tube | 2005 | Obsolete | 3 (168 Hours) | SMD/SMT | 100Ohm | 1.6W | 10V~20V | IR2135SPBF | 300mV | 500mA | 100μA | 1.6W | 200mA | Inverting | 750 ns | 20V | 150ns | 70 ns | 10V | 90ns 40ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 250mA 500mA | 600V | 2.3622mm | 18.0848mm | 7.5946mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| CHL8515CRT | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 20 Weeks | Half-Bridge | 表面贴装 | 表面贴装 | 10-VFDFN Exposed Pad | 10 | 0.8V 1V | -40°C~125°C TJ | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | EAR99 | 4.5V~5.5V | CHL8515CRT | 2A | Non-Inverting | 10ns 8ns | Synchronous | 2 | N-Channel MOSFET | 2A 2A | 35V | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2EDN7523FXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | 5A | 25 ns | Inverting | 无卤素 | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 1.73mm | 4.93mm | 3.94mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
| IR3103 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.9V | 通孔 | 通孔 | 11-SIP, 9 Leads | 9 | 11-SIP | Half-Bridge | -40°C~150°C TJ | Tube | 2005 | iMOTION™ | Obsolete | 1 (Unlimited) | 150°C | -40°C | 10V~20V | 16kHz | IR3103 | 1 | 500V | 700mA | 20V | 10V | 180mA | 1.4W | 750mA | Non-Inverting | Independent | 2 | N-Channel MOSFET | 500V | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
| IR2110-1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 9.5V | 通孔 | 14-DIP (0.300, 7.62mm), 13 Leads | 14-PDIP | Half-Bridge | -40°C~150°C TJ | Tube | 2005 | Obsolete | 1 (Unlimited) | 3.3V~20V | IR2110-1 | Non-Inverting | 25ns 17ns | Independent | 2 | IGBT, N-Channel MOSFET | 2A 2A | 500V | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2EDN7523RXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | YES | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 0.65mm | 未说明 | 5A | 25 ns | Inverting | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 1.04mm | 3mm | 3mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| IR2128PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | High-Side or Low-Side | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 200 ns | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 125Ohm | 1W | 12V~20V | DUAL | 1 | 15V | 2.54mm | IR2128PBF | 620V | 500mA | 120μA | 1W | 200mA | 250 ns | Inverting | 250 ns | 130ns | 65 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | 600V | 4.9276mm | 10.8966mm | 7.112mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
| IR2132STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | Obsolete | 1 (Unlimited) | 28 | EAR99 | Matte Tin (Sn) | 1.6W | 10V~20V | DUAL | 鸥翼 | 3 | 15V | 1.27mm | IR2132S | R-PDSO-G28 | 3 | 500mA | 15V | Inverting | 80ns 35ns | 3-Phase | 6 | 0.85 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.55 μs | 600V | 17.9mm | 7.5mm | 无 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||
| 2EDN8523RXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | Low-Side | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | YES | 8 | 1.2V 1.9V | -40°C~150°C TJ | Tape & Reel (TR) | 2016 | EiceDriver™ | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 0.65mm | 未说明 | 5A | 25 ns | Inverting | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 1.04mm | 3mm | 3mm | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| IR25600PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 65 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Low-Side | -40°C~150°C TJ | Tube | 2005 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 625mW | 6V~20V | 未说明 | 15V | 未说明 | IR25600 | 不合格 | 20V | 1.5A | 15V | Dual | 200μA | 1.5A | Non-Inverting | 160 ns | 35ns | 25 ns | 15ns 10ns | 基于半桥的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 2.3A 3.3A | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| IR2110-2PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 9.5V | 10 ns | 通孔 | 通孔 | 16-DIP (0.300, 7.62mm), 14 Leads | 14 | 16-PDIP | Half-Bridge | -40°C~150°C TJ | Tube | 2005 | Obsolete | 1 (Unlimited) | 125°C | -40°C | 1.6W | 3.3V~20V | IR2110-2PBF | 2 | 2A | 20V | 10V | 340μA | 1.6W | 2A | 340μA | 150 ns | Non-Inverting | 10 ns | 35ns | 25 ns | 25ns 17ns | Independent | 2 | IGBT, N-Channel MOSFET | 2A 2A | 500V | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| TDA21106 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -25°C~150°C TJ | Tape & Reel (TR) | 2004 | CoreControl™ | e3 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 哑光锡 | 800mW | 10.8V~13.2V | DUAL | 鸥翼 | 260 | 1 | 12V | 未说明 | TDA21106 | 8 | R-PDSO-G8 | 不合格 | 8mA | Non-Inverting | 33ns | 25 ns | 20ns 15ns | Synchronous | 2 | 12V | N-Channel MOSFET | 4A 4A | YES | 45V | 1.75mm | 5mm | 4mm | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||
| 2EDN8523FXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1.2V 1.9V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | 5A | 25 ns | Inverting | 无卤素 | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 1.73mm | 4.93mm | 3.94mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
| IR21531STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2005 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10V~15.6V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | IR21531S | R-PDSO-G8 | 不合格 | RC输入电路 | 80ns 45ns | Synchronous | 2 | 12V | N-Channel MOSFET | YES | 600V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
| IR7106SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 9 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 最后一次购买 | 3 (168 Hours) | EAR99 | 10V~20V | 未说明 | 未说明 | Non-Inverting | 150ns 50ns | Independent | 2 | IGBT, N-Channel MOSFET | 200mA 350mA | 700V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IR2106STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.9V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2106S | R-PDSO-G8 | 不合格 | 15V | Non-Inverting | 150ns 50ns | Independent | 2 | 0.3 µs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||
| 2EDN7424FXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.3V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | R-PDSO-G8 | Non-Inverting | 6.4ns 5.4ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | 4A 4A | NO | 1.73mm | 4.93mm | 3.94mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRS2334MPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.5V | 表面贴装 | 28-VFQFN Exposed Pad | Half-Bridge | -40°C~150°C TJ | Tray | 2011 | Obsolete | 2 (1 Year) | 10V~20V | compliant | IRS2334MPBF | Non-Inverting | 125ns 50ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 200mA 350mA | 600V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRS21844MPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.5V | 表面贴装 | 16-VFQFN Exposed Pad, 14 Leads | Half-Bridge | -40°C~150°C TJ | Tube | 2011 | Obsolete | 2 (1 Year) | 10V~20V | IRS21844MPBF | Non-Inverting | 40ns 20ns | Synchronous | 2 | N-Channel MOSFET | 1.9A 2.3A | 600V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IR20153SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 300 ps | High-Side | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 1.4V 3V | -55°C~150°C TJ | Tube | 2004 | Obsolete | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | 5V~20V | IR20153SPBF | 1 | 170V | 1.5A | 20V | 5V | 1.5A | 2 μs | Inverting | 1 ns | 20V | 400ns | 400 ns | 5V | 200ns 100ns | Single | 1 | N-Channel MOSFET | 1.5A 1.5A | 150V | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||
| IR2108STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.9V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2108S | R-PDSO-G8 | 不合格 | Non-Inverting | 150ns 50ns | Independent | 2 | 0.3 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| IR21365JTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 3V | 550 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | 44-PLCC, 32 Leads (16.58x16.58) | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | Obsolete | 3 (168 Hours) | 125°C | -40°C | 2W | 12V~20V | IR21365JPBF | 6 | 350mA | 20V | 12V | 2W | Inverting | 550 ns | 190ns | 75 ns | 125ns 50ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 200mA 350mA | 600V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||
| IR4428STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | Low-Side | Cut Tape (CT) | 2005 | Obsolete | 2 (1 Year) | 125°C | -40°C | 625mW | 6V~20V | IR4428SPBF | 2 | 3.3A | 20V | 6V | 200μA | 625mW | 3.3A | 200μA | 160 ns | Inverting, Non-Inverting | 160 ns | 35ns | 25 ns | Independent | 2 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| IR21368PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.5V | 550 ns | 通孔 | 通孔 | 28-DIP (0.600, 15.24mm) | 28 | 28-PDIP | Half-Bridge | -40°C~150°C TJ | Tube | 2008 | Obsolete | 1 (Unlimited) | 100Ohm | 125°C | -40°C | 1.5W | 10V~20V | IR21368PBF | 6 | 300mV | 350mA | 20V | 10V | 120μA | 1.5W | 200mA | Inverting | 550 ns | 190ns | 75 ns | 125ns 50ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 200mA 350mA | 600V | 5.969mm | 39.7256mm | 14.732mm | 无 | 符合RoHS标准 | 无铅 |