制造商是'Infineon'
Infineon PMIC - 栅极驱动器
(1037)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 电源 | 通道数量 | 最大电源电压 | 最小电源电压 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 输入类型 | 接通延迟时间 | 无卤素 | 上升时间 | 下降时间（典型值） | 输出极性 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 输入偏置电流 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 输出电流流向 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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 | IRS2330DSPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 500 ns | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | Obsolete | 3 (168 Hours) | 28 | EAR99 | 75Ohm | 8542.39.00.01 | 1.6W | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 1.27mm | 未说明 | IRS2330DSPBF | 不合格 | 620V | 500mA | 15V | 4mA | 1.6W | 200mA | 700 ns | Inverting | 50 ns | 80ns | 35 ns | 80ns 35ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.7 μs | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.7 μs | 600V | 2.35mm | 18.0848mm | 7.5946mm | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | IR25603PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 625mW | 10V~15.6V | DUAL | 未说明 | 12V | 未说明 | IR25603 | 1 | 不合格 | 100mV | 25mA | 5mA | 260mA | RC输入电路 | 80ns | 40 ns | 80ns 45ns | Synchronous | 2 | N-Channel MOSFET | 180mA 260mA | 600V | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||
 | IRS21952SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.6V 3.5V | 330 ns | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | Half-Bridge, Low-Side | -55°C~150°C TJ | Tube | 1996 | e3 | Obsolete | 2 (1 Year) | 16 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 1W | 10V~20V | DUAL | 鸥翼 | 260 | 2 | 15V | 1.27mm | 30 | IRS21952SPBF | 不合格 | 20V | 500mA | 15V | 400μA | 1W | 500mA | 330 ns | Non-Inverting | 330 ns | 25ns | 25 ns | 25ns 25ns | 基于缓冲器或反相器的外设驱动器 | Independent | 3 | 0.5A | N-Channel MOSFET | 500mA 500mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 9.9568mm | 3.9878mm | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||
 | IR2117STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 9.5V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2117S | R-PDSO-G8 | 不合格 | Non-Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 600V | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | 1EDN7512GXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 6-WDFN Exposed Pad | YES | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2016 | EiceDriver™ | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 4.5V~20V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.95mm | 未说明 | S-PDSO-N6 | Inverting, Non-Inverting | 6.5ns 4.5ns | 基于半桥的mosfet驱动器 | Single | 1 | 0.025 μs | N-Channel MOSFET | 4A 8A | NO | 0.025 μs | 0.8mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||
 | IRS21271PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 150 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | High-Side | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 125Ohm | 1W | 9V~20V | DUAL | 1 | 15V | 2.54mm | IRS21271PBF | 600mA | 120μA | 1W | 200mA | 120μA | 200 ns | Non-Inverting | 150 ns | 130ns | 65 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 μs | 0.6A | IGBT, N-Channel MOSFET | 290mA 600mA | YES | 0.2 μs | 600V | 5.33mm | 10.92mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||
 | IRS2332DJPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 500 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | Obsolete | 3 (168 Hours) | 44 | EAR99 | 75Ohm | 2W | 10V~20V | QUAD | J BEND | 未说明 | 1 | 15V | 未说明 | IRS2332DJPBF | 1 | 不合格 | 620V | 500mA | 2W | 200mA | 700 ns | Inverting | 50 ns | 125ns | 55 ns | 80ns 35ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.7 μs | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.7 μs | 600V | 3.59mm | 16.66mm | 16.66mm | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||
 | IR21141SSPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | 440 ns | 表面贴装 | 表面贴装 | 24-SSOP (0.209, 5.30mm Width) | 24 | 24-SSOP | Half-Bridge | -40°C~150°C TJ | Tube | 2005 | Obsolete | 3 (168 Hours) | 125°C | -40°C | 1.5W | 11.5V~20V | IR21141SSPBF | 2 | 620V | 3A | 20V | 11.5V | 2.5mA | 1.5W | 1A | 2.5mA | 660 ns | Non-Inverting | 440 ns | 24ns | 7 ns | 24ns 7ns | Independent | 2 | IGBT | 2A 3A | 600V | 1.75mm | 8.2mm | 5.3mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
 | IR21362PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 3V | 550 ns | 通孔 | 通孔 | 28-DIP (0.600, 15.24mm) | 28 | 28-PDIP | Half-Bridge | -40°C~150°C TJ | Tube | 2007 | Obsolete | 1 (Unlimited) | 125°C | -40°C | 1.5W | 11.5V~20V | IR21362PBF | 3 | 350mA | 20V | 11.5V | 1.5W | 200mA | Inverting, Non-Inverting | 550 ns | 190ns | 75 ns | 125ns 50ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 200mA 350mA | 600V | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||
| IR2104STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 3V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2104S | R-PDSO-G8 | 不合格 | 15V | Non-Inverting | 100ns 50ns | Synchronous | 2 | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||
 | 2EDL05I06BFXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 1.1V 1.7V | Industrial grade | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2013 | EiceDriver™ | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Tin (Sn) | 600mW | 10V~20V | DUAL | 鸥翼 | 未说明 | 15V | 未说明 | 不合格 | 500mA | 1 | 500mA | 600μA | 600 ns | Non-Inverting | 无卤素 | 48ns 24ns | Independent | 2 | IGBT | 500mA 500mA | 600V | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||
| IRS2336JPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.5V | Surface Mount, Through Hole | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | Obsolete | 3 (168 Hours) | 32 | EAR99 | 100Ohm | Matte Tin (Sn) | 8542.39.00.01 | 2W | 10V~20V | QUAD | J BEND | 1 | 15V | 1.27mm | IRS2336JPBF | S-PQCC-J32 | 不合格 | 350mA | 2W | 350mA | 750 ns | Inverting | 750 ns | 190ns | 75 ns | INVERTED | STANDARD | 125ns 50ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.75 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 0.75 μs | 600V | 4.06mm | 16.66mm | 16.66mm | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||
 | IR2110STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 9.5V | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | Obsolete | 1 (Unlimited) | 16 | EAR99 | Matte Tin (Sn) | 3.3V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2110S | R-PDSO-G16 | 不合格 | 15V | Non-Inverting | 25ns 17ns | Independent | 2 | 0.15 μs | 2.5A | IGBT, N-Channel MOSFET | 2A 2A | YES | 500V | 10.3mm | 7.5mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||
| IR2118STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 9.5V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2118S | R-PDSO-G8 | 不合格 | Inverting | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.2 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 600V | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||
| IR2153STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TJ | Tape & Reel (TR) | 2006 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10V~15.6V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | IR2153S | R-PDSO-G8 | 不合格 | RC输入电路 | 80ns 45ns | Synchronous | 2 | N-Channel MOSFET | YES | 600V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||||
| IR21362STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 3V | 550 ns | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | 28-SOIC | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | Obsolete | 3 (168 Hours) | 125°C | -40°C | 1.6W | 11.5V~20V | IR21362SPBF | 3 | 350mA | 20V | 11.5V | 1.6W | 200mA | Inverting, Non-Inverting | 550 ns | 190ns | 75 ns | 125ns 50ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 200mA 350mA | 600V | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||
 | IR2110-1PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 9.5V | 10 ns | 通孔 | 通孔 | 14-DIP (0.300, 7.62mm), 13 Leads | 14 | 14-PDIP | Half-Bridge | -40°C~150°C TJ | Tube | 2005 | Obsolete | 1 (Unlimited) | 125°C | -40°C | 1.6W | 3.3V~20V | IR2110-1PBF | 2 | 2A | 20V | 10V | 340μA | 1.6W | 2.5A | 340μA | 150 ns | Non-Inverting | 10 ns | 35ns | 25 ns | 25ns 17ns | Independent | 2 | IGBT, N-Channel MOSFET | 2A 2A | 500V | 无SVHC | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||
| IR22141SSTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | 440 ns | 表面贴装 | 表面贴装 | 24-SSOP (0.209, 5.30mm Width) | 24 | 24-SSOP | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | Obsolete | 3 (168 Hours) | 60Ohm | 125°C | -40°C | 1.5W | 11.5V~20V | IR22141SSPBF | 2 | 3A | 20V | 11.5V | 2.5mA | 1.5W | 1A | 2.5mA | 660 ns | Non-Inverting | 440 ns | 24ns | 7 ns | 24ns 7ns | Independent | 2 | 330μA | IGBT | 2A 3A | 1200V | 1.8542mm | 8.4836mm | 5.588mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||
 | IR21084STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.9V | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 14 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR21084S | R-PDSO-G14 | Non-Inverting | 150ns 50ns | Independent | 2 | 0.3 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 1.75mm | 8.65mm | 3.9mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | 2EDN7524RXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | YES | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | yes | 活跃 | 1 (Unlimited) | 8 | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 0.65mm | 未说明 | 5A | 25 ns | Non-Inverting | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 1.04mm | 3mm | 3mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| IR4427STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.7V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 6V~20V | DUAL | 鸥翼 | 未说明 | 2 | 15V | 未说明 | IR4427S | R-PDSO-G8 | 不合格 | Non-Inverting | 15ns 10ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 2.3A 3.3A | NO | 1.75mm | 4.89mm | 3.9mm | Non-RoHS Compliant | |||||||||||||||||||||||||||||||||||||||||||||
| 2EDN7424RXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.3V | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | YES | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | e4 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 0.65mm | 未说明 | R-PDSO-G8 | Non-Inverting | 6.4ns 5.4ns | 基于缓冲器或逆变器的MOSFET驱动器 | Independent | 2 | N-Channel MOSFET | 4A 4A | NO | 1.04mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||
| IR11671ASPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 65 ns | Tube | 2006 | Obsolete | 2 (1 Year) | 125°C | -40°C | 970mW | 1 | 18V | 12V | 80 ns | 125ns | 30 ns | 1 | 1.75mm | 5mm | 4mm | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IR2151PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | 8-PDIP | Half-Bridge | -40°C~150°C TJ | Tube | 2001 | Obsolete | 1 (Unlimited) | 125°C | -40°C | 1W | 10V~20V | 106kHz | IR2151PBF | 2 | 250mA | 20V | 1W | 5mA | RC输入电路 | 120ns | 70 ns | 80ns 40ns | Synchronous | 2 | IGBT, N-Channel MOSFET | 125mA 250mA | 600V | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| IR2011STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.7V 2.2V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side or Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2011S | 2 | 不合格 | 1A | Inverting | 35ns 20ns | 基于半桥的mosfet驱动器 | Independent | 1A | N-Channel MOSFET | 1A 1A | YES | 200V | 1.75mm | 4.9mm | 3.9mm | Non-RoHS Compliant | 无铅 |