制造商是'Infineon'
Infineon PMIC - 栅极驱动器
(1037)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | Reach合规守则 | 时间@峰值回流温度-最大值(s) | 基本部件号 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 电源 | 最大电源电压 | 最小电源电压 | 模拟 IC - 其他类型 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 静态电流 | 输入类型 | 接通延迟时间 | 无卤素 | 上升时间 | 下降时间（典型值） | 输出极性 | 发布时间 | 输入特性 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 输入偏置电流 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 输出电流流向 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | ||||
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 | IR7304STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.3V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | 最后一次购买 | 2 (1 Year) | EAR99 | 10V~20V | 未说明 | 未说明 | Non-Inverting | 200ns 100ns | Independent | 2 | IGBT, N-Channel MOSFET | 60mA 130mA | 700V | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRS2184PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 40 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1W | 10V~20V | DUAL | 1 | 15V | IRS2184PBF | 2 | 620V | 2.3A | 15V | 1.6mA | 1W | 1.9A | 1.6mA | 900 ns | Non-Inverting | 90 ns | 60ns | 35 ns | 270 ns | 40ns 20ns | Synchronous | 0.9 μs | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.4 μs | TRANSIENT; UNDER VOLTAGE | 600V | 4.9276mm | 10.8966mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
| AUIRS21281S | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.5V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | -40°C~150°C TJ | Tube | 2012 | Automotive, AEC-Q100 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 625mW | 9V~20V | DUAL | 鸥翼 | 1 | 15V | AUIRS21281S | 600mA | 625mW | 290mA | 275 ns | Inverting | 275 ns | 130ns | 65 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.275 μs | IGBT, N-Channel MOSFET | 290mA 600mA | 0.275 μs | OVER CURRENT; UNDER VOLTAGE | 600V | 1.5mm | 5mm | 4mm | 无 | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||
 | IRS23364DJPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 0.8V 2.5V | 530 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 32 | EAR99 | Matte Tin (Sn) | 2W | 11.5V~20V | QUAD | J BEND | 1 | 15V | IRS23364DJPBF | S-PQCC-J32 | 1 | 20V | 350mA | 3mA | 2W | 200mA | 750 ns | Non-Inverting | 530 ns | 190ns | 75 ns | TRUE | STANDARD | 125ns 50ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.75 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 0.75 μs | 600V | 3.69mm | 16.66mm | 16.66mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
 | 2EDN8524RXUMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1.2V 1.9V | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | YES | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | e4 | yes | 活跃 | 1 (Unlimited) | 8 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 0.65mm | 未说明 | 5A | 25 ns | Non-Inverting | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 1.04mm | 3mm | 3mm | 无SVHC | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||
| IR2308PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.9V | 200 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | 1W | 10V~20V | DUAL | 未说明 | 1 | 15V | 未说明 | IR2308PBF | 350mA | 1W | 200mA | 300 ns | Non-Inverting | 220 ns | 220ns | 80 ns | 150ns 50ns | Independent | 2 | 0.3 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 600V | 4.9276mm | 10.8966mm | 7.11mm | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
 | IR22141SSPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2V | 440 ns | 表面贴装 | 表面贴装 | 24-SSOP (0.209, 5.30mm Width) | 24 | 24-SSOP | Half-Bridge | -40°C~150°C TJ | Tube | 2006 | Obsolete | 3 (168 Hours) | 60Ohm | 125°C | -40°C | 1.5W | 11.5V~20V | IR22141SSPBF | 2 | 620V | 3A | 20V | 11.5V | 2.5mA | 1.5W | 1A | 2.5mA | 660 ns | Non-Inverting | 440 ns | 24ns | 7 ns | 440 ns | 24ns 7ns | Independent | 2 | 330μA | IGBT | 2A 3A | 1200V | 1.75mm | 8.2mm | 5.3mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||
 | IR3535MTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 16-VFQFN Exposed Pad | Half-Bridge | Tape & Reel (TR) | 2012 | 活跃 | 2 (1 Year) | EAR99 | 4.5V~7V | 未说明 | 未说明 | IR3535MPBF | 4A | 开关控制器 | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | - 4A | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | IR2135PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 950 ns | 通孔 | 通孔 | 28-DIP (0.600, 15.24mm) | 28 | Half-Bridge | 125°C TJ | Tube | 2005 | Obsolete | 1 (Unlimited) | 100Ohm | 1.5W | 10V~20V | IR2135PBF | 10V | 500mA | 1.5W | 200mA | Inverting | 750 ns | 150ns | 70 ns | 90ns 40ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 250mA 500mA | 600V | 5.969mm | 39.7256mm | 14.732mm | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRS2124S | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | High-Side | -55°C~150°C TJ | Tube | 2009 | Automotive, AEC-Q100 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | compliant | 未说明 | AUIRS2124S | R-PDSO-G8 | 不合格 | Non-Inverting | 80ns 80ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 1 | 0.24 μs | 0.5A | IGBT, N-Channel MOSFET | 500mA 500mA | YES | 0.24 μs | 600V | 4.89mm | 3.9mm | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||
 | IR21844PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 40 ns | 通孔 | 通孔 | 14-DIP (0.300, 7.62mm) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 14 | EAR99 | 1.6W | 10V~20V | DUAL | 1 | 15V | IR21844PBF | 2 | 620V | 2.3A | 15V | 1.6mA | 1.6W | 1.9A | 1.6mA | 900 ns | Non-Inverting | 90 ns | 60ns | 35 ns | 40ns 20ns | Independent | 0.9 μs | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.4 μs | 600V | 4.9276mm | 20.1676mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||
 | IR2112STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 6V 9.5V | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | YES | High-Side or Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | Obsolete | 1 (Unlimited) | 16 | EAR99 | Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2112S | R-PDSO-G16 | 不合格 | 15V | Non-Inverting | 80ns 40ns | 基于半桥的mosfet驱动器 | Independent | 2 | 0.18 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.16 μs | 600V | 10.3mm | 7.5mm | Non-RoHS Compliant | ||||||||||||||||||||||||||||||||||||||||||||
 | 2EDN7523GXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 8-WDFN Exposed Pad | YES | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 4.5V~20V | DUAL | 无铅 | 未说明 | 1 | 12V | 0.65mm | 未说明 | S-PDSO-N8 | Inverting | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 0.8mm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||
| AUIRS21811STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 17 Weeks | 0.8V 2.5V | 35 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 2000 | e3 | 活跃 | 3 (168 Hours) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | AUIRS21811S | 20V | 2.3A | 15V | 130μA | 625mW | 1.9A | 230 ns | Non-Inverting | 35 ns | 60ns | 35 ns | 60ns 35ns Max | Independent | 2 | IGBT, N-Channel MOSFET | 1.9A 2.3A | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||
 | AUIRS2012STR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.7V 2.5V | Automotive grade | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~125°C TA | Tape & Reel (TR) | 2000 | Automotive, AEC-Q100 | Obsolete | 3 (168 Hours) | 8 | EAR99 | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | R-PDSO-G8 | Non-Inverting | 22ns 15ns | Independent | 2 | 2A | N-Channel MOSFET | 2A 2A | UNDER VOLTAGE | 200V | 水槽 | 1.75mm | 4.89mm | 3.9mm | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||
| IR21362JPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 3V | 400 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | -40°C~150°C TJ | Tube | 2008 | Obsolete | 3 (168 Hours) | 2W | 11.5V~20V | IR21362JPBF | 300mV | 350mA | 120μA | 2W | 200mA | Inverting, Non-Inverting | 550 ns | 190ns | 75 ns | 125ns 50ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 200mA 350mA | 600V | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRS2127PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 150 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | High-Side | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1W | 12V~20V | DUAL | 1 | 15V | 2.54mm | IRS2127PBF | 1 | 600mA | 120μA | 1W | 200mA | 120μA | 200 ns | 60μA | Non-Inverting | 150 ns | 130ns | 65 ns | 150 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.2 μs | 0.6A | IGBT, N-Channel MOSFET | 290mA 600mA | YES | 0.2 μs | 600V | 5.33mm | 10.92mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||
 | IRS21844MTRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 0.8V 2.5V | 40 ns | 表面贴装 | 表面贴装 | 16-VFQFN Exposed Pad, 14 Leads | 16 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 14 | EAR99 | Matte Tin (Sn) | 2.08W | 10V~20V | QUAD | 无铅 | 未说明 | 1 | 15V | 0.5mm | 未说明 | IRS21844MPBF | S-XQCC-N14 | 不合格 | 2.3A | 15V | 2.08W | 1.9A | 900 ns | Non-Inverting | 90 ns | 60ns | 35 ns | 40ns 20ns | Synchronous | 2 | 0.9 μs | 2.3A | N-Channel MOSFET | 1.9A 2.3A | 0.4 μs | TRANSIENT | 600V | 1.05mm | 4mm | 4mm | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||
 | IRS21853SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.6V 3.5V | 170 ns | 表面贴装 | 表面贴装 | 16-SOIC (0.154, 3.90mm Width) | 16 | High-Side | -55°C~150°C TJ | Tube | 1996 | e3 | Obsolete | 2 (1 Year) | 16 | SMD/SMT | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 1.25W | 10V~20V | DUAL | 鸥翼 | 260 | 2 | 15V | 30 | IRS21853SPBF | 2A | 15V | 75μA | 1.25W | 2A | 170 ns | Non-Inverting | 170 ns | 50ns | 50 ns | 15ns 15ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | 2A | IGBT, N-Channel MOSFET | 2A 2A | UNDER VOLTAGE | 600V | 1.4986mm | 9.9568mm | 3.9878mm | 无 | 无SVHC | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||
| IRS2332JPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 700 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | Obsolete | 3 (168 Hours) | 44 | SMD/SMT | EAR99 | 75Ohm | 8542.39.00.01 | 2W | 10V~20V | QUAD | J BEND | 15V | 1.27mm | IRS2332JPBF | 不合格 | 20V | 500mA | 15V | 250mA | 2W | 200mA | 700 ns | Inverting | 50 ns | 80ns | 35 ns | 80ns 35ns | 3-Phase | 6 | IGBT, N-Channel MOSFET | 250mA 500mA | 600V | 3.59mm | 16.66mm | 16.66mm | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||
| IRS21084PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 30 ns | 通孔 | 通孔 | 14-DIP (0.300, 7.62mm) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 14 | EAR99 | 1.6W | 10V~20V | DUAL | 1 | 15V | IRS21084PBF | 2 | 10V | 600mA | 15V | 1.6mA | 1.6W | 290mA | 1.6mA | 300 ns | Inverting, Non-Inverting | 30 ns | 220ns | 80 ns | 100ns 35ns | Independent | 0.3 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 5.33mm | 20.19mm | 7.11mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||
| IRS21091PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 200 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1W | 10V~20V | DUAL | 未说明 | 1 | 15V | 未说明 | IRS21091PBF | 不合格 | 600mA | 15V | 1.6mA | 1W | 290mA | 1.6mA | 950 ns | Non-Inverting | 70 ns | 220ns | 80 ns | 100ns 35ns | Synchronous | 2 | 0.95 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; THERMAL | 600V | 4.9276mm | 10.8966mm | 7.11mm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||
| 2EDN8524FXTMA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 1.2V 1.9V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2015 | EiceDriver™ | yes | 活跃 | 3 (168 Hours) | 8 | 4.5V~20V | DUAL | 鸥翼 | 未说明 | 1 | 12V | 未说明 | 5A | 25 ns | Non-Inverting | 无卤素 | 5.3ns 4.5ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | N-Channel MOSFET | 5A 5A | UNDER VOLTAGE | SOURCE | 1.73mm | 4.93mm | 3.94mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||
| IRS2001MPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.5V | 50 ns | 表面贴装 | 表面贴装 | 16-VFQFN Exposed Pad | 16 | Half-Bridge | -40°C~150°C TJ | Tube | 2010 | Obsolete | 2 (1 Year) | EAR99 | 2.08W | 10V~20V | IRS2001MPBF | 15V | 600mA | 150μA | 2.08W | 600mA | 220 ns | Non-Inverting | 50 ns | 70ns | 35 ns | 70ns 35ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 290mA 600mA | 200V | 无 | 无SVHC | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRS2330DJPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 0.8V 2.2V | 500 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | Obsolete | 3 (168 Hours) | 44 | EAR99 | 2W | 10V~20V | QUAD | J BEND | 未说明 | 1 | 15V | 未说明 | IRS2330DJPBF | 1 | 不合格 | 620V | 500mA | 2W | 200mA | 700 ns | Inverting | 50 ns | 125ns | 55 ns | 80ns 35ns | 基于缓冲器或逆变器的MOSFET驱动器 | 3-Phase | 6 | 0.7 μs | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.7 μs | 600V | 3.59mm | 16.66mm | 16.66mm | 无SVHC | 符合RoHS标准 |