制造商是'Infineon'
Infineon PMIC - 栅极驱动器
(1037)
图片 | 产品型号 | 品牌 | 数据表 | 有效性 | 单价(CNY) | 询价 | 认证 | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 操作温度 | 包装 | 已出版 | JESD-609代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 类型 | 电阻 | 端子表面处理 | 附加功能 | HTS代码 | 最大功率耗散 | 电压 - 供电 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 电源电压 | 端子间距 | 频率 | 时间@峰值回流温度-最大值(s) | 基本部件号 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 工作电源电压 | 电源 | 工作电源电流 | 电源电流 | 功率耗散 | 输出电流 | 最大电源电流 | 传播延迟 | 输入类型 | 接通延迟时间 | 最大输出电压 | 参考电压 | 输入失调电压(Vos) | 上升时间 | 下降时间（典型值） | 最小输出电压 | 发布时间 | 上升/下降时间(Typ) | 接口IC类型 | 信道型 | 驱动器数量 | 接通时间 | 输出峰值电流限制-名 | 闸门类型 | 峰值输出电流（源极，漏极） | 最大结点温度（Tj） | 高边驱动器 | 关断时间 | 内置保护器 | 高压侧电压-最大值(自举) | 环境温度范围高 | 高度 | 座位高度(最大) | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | IR2113PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 20 ns | Surface Mount, Through Hole | 通孔 | 14-DIP (0.300, 7.62mm) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 14 | SMD/SMT | EAR99 | Integrated Circuit (IC) | 1.25W | 3.3V~20V | DUAL | 1 | 15V | IR2113PBF | 2 | 20V | 2A | 15V | 340μA | 1.25W | 2.5A | 340μA | 150 ns | Non-Inverting | 20 ns | 20V | 600V | 35ns | 25 ns | 10V | 25ns 17ns | Independent | 0.15 μs | 2.5A | IGBT, N-Channel MOSFET | 2A 2A | YES | 2.35mm | 10.4902mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||
 | IR2110SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 94 ns | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 16 | SMD/SMT | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 1.25W | 3.3V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2110SPBF | 2 | 520V | 2.5mA | 15V | 180μA | 1.25W | 2.5A | 340μA | 120 ns | Non-Inverting | 120 ns | 20V | 500V | 25ns | 17 ns | 10V | 25ns 17ns | Independent | 0.15 μs | 2.5A | IGBT, N-Channel MOSFET | 2A 2A | 150°C | YES | 125°C | 2.65mm | 10.4902mm | 7.5946mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||
 | IR2104SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 60 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | SMD/SMT | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2104SPBF | 2 | 10V | 360mA | 15V | 150μA | 625mW | 130mA | 270μA | 820 ns | Non-Inverting | 60 ns | 20V | 170ns | 90 ns | 10V | 100ns 50ns | Synchronous | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||
| IR2184SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 270 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | SMD/SMT | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2184SPBF | 2 | 20V | 2.3A | 15V | 1mA | 625mW | 1.9A | 1.6mA | 900 ns | Non-Inverting | 680 ns | 20V | 40ns | 20 ns | 10V | 40ns 20ns | Independent | 0.9 μs | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | 150°C | YES | 0.4 μs | 600V | 125°C | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||
| IR2181SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 330 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IR2181SPBF | 2 | 2.3A | 15V | 625mW | 1.9A | 330 ns | Non-Inverting | 270 ns | 60ns | 35 ns | 220 ns | 40ns 20ns | Independent | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.33 μs | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||||||
| IR2183SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 35 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 540.001716mg | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IR2183SPBF | 2 | 620V | 2.3A | 15V | 1.6mA | 1.6mA | 625mW | 210mA | 1.6mA | 330 ns | Inverting, Non-Inverting | 35 ns | 60ns | 35 ns | 220 ns | 40ns 20ns | Independent | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.33 μs | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||
 | IRS2113STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 20 ns | 表面贴装 | 表面贴装 | 16-SOIC (0.295, 7.50mm Width) | 16 | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 3 (168 Hours) | 16 | EAR99 | Tin (Sn) | 1.25W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2113SPBF | 10V | 2.5A | 15V | 340μA | 1.25W | 2.5A | 340μA | 160 ns | Non-Inverting | 20 ns | 35ns | 25 ns | 25ns 17ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | IGBT, N-Channel MOSFET | 2.5A 2.5A | 0.15 μs | TRANSIENT; UNDER VOLTAGE | 600V | 2.3622mm | 10.4902mm | 7.5946mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
| IR2153SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 15 Weeks | 100 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Tube | 1996 | e3 | 不用于新设计 | 2 (1 Year) | 8 | SMD/SMT | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 625mW | 10V~15.6V | DUAL | 鸥翼 | 1 | 12V | 106kHz | IR2153SPBF | 2 | 20V | 250mA | 5mA | 625mW | 400mA | 5mA | 660 ns | RC输入电路 | 150 ns | 20V | 600V | 80ns | 45 ns | 10V | 80ns 45ns | Synchronous | N-Channel MOSFET | 125°C | YES | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
 | IR2214SSPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 16 Weeks | 0.8V 2V | 440 ns | 表面贴装 | 表面贴装 | 24-SSOP (0.209, 5.30mm Width) | 24 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 24 | EAR99 | 60Ohm | Matte Tin (Sn) | 1.5W | 11.5V~20V | DUAL | 鸥翼 | 1 | 15V | 0.65mm | IR2214SSPBF | 2 | 1.22kV | 3A | 15V | 2.5mA | 1.5W | 1A | 2.5mA | 660 ns | Non-Inverting | 440 ns | 24ns | 7 ns | 24ns 7ns | Independent | 0.66 μs | 2A | IGBT | 2A 3A | 0.66 μs | TRANSIENT; OVER CURRENT; UNDER VOLTAGE | 1200V | 1.75mm | 8.2mm | 5.3mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||
| IR2102SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 150 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2102SPBF | 2 | 620V | 360mA | 15V | 150μA | 625mW | 210mA | 270μA | 220 ns | Inverting | 160 ns | 100ns | 50 ns | 100ns 50ns | Independent | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | 150°C | YES | 600V | 125°C | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||
| IR4427STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 65 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 2005 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 625mW | 6V~20V | DUAL | 鸥翼 | 2 | 15V | IR4427SPBF | 2 | 6V | 3.3A | 13V | 100μA | 625mW | 1.5A | 200μA | 150 ns | Non-Inverting | 85 ns | 15ns | 10 ns | 65 ns | 15ns 10ns | Independent | IGBT, N-Channel MOSFET | 2.3A 3.3A | 150°C | NO | 125°C | 1.75mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||
| IR2118SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | High-Side | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 65 ns | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 260 | 1 | 15V | 30 | IR2118SPBF | 1 | 20V | 500mA | 340μA | 625mW | 250mA | 340μA | 200 ns | Inverting | 125 ns | 130ns | 65 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.2 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||||||
| IR2117STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IR2117SPBF | 20V | 250mA | 340μA | 625mW | 500mA | 340μA | 200 ns | Non-Inverting | 200 ns | 130ns | 65 ns | 80ns 40ns | Single | 1 | 0.2 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||
| IR2101STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | Half-Bridge | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 10V~20V | DUAL | 鸥翼 | 未说明 | 1 | 15V | 未说明 | IR2101SPBF | R-PDSO-G8 | 不合格 | 15V | Non-Inverting | 100ns 50ns | Independent | 2 | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | 600V | 1.75mm | 4.9mm | 3.9mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
| IR2127SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 200 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side or Low-Side | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | SMD/SMT | EAR99 | 125Ohm | Matte Tin (Sn) | 625mW | 12V~20V | DUAL | 鸥翼 | 1 | 15V | IR2127SPBF | 1 | 10V | 500mA | 15V | 120μA | 625mW | 200mA | 250 ns | Non-Inverting | 250 ns | 20V | 130ns | 65 ns | 12V | 150 ns | 80ns 40ns | 基于缓冲器或逆变器的MOSFET驱动器 | Single | 0.25 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.2 μs | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||
 | IR2117PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 6V 9.5V | 105 ns | Surface Mount, Through Hole | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | High-Side | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 250 | 1 | 15V | 2.54mm | 30 | IR2117PBF | 1 | 20V | 500mA | 15V | 340μA | 625mW | 250mA | 340μA | 200 ns | Non-Inverting | 200 ps | 20V | 600V | 130ns | 65 ns | 10V | 80ns 40ns | Single | 0.2 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||
| IRS2153DSPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~125°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | SMD/SMT | EAR99 | Integrated Circuit (IC) | Matte Tin (Sn) | 625mW | 10V~15.4V | DUAL | 鸥翼 | 260 | 1 | 14V | 100kHz | 30 | IRS2153DSPBF | 2 | 625.3V | 260mA | 14V | 5mA | 625mW | 260mA | 5mA | RC输入电路 | 625V | 220ns | 80 ns | 120ns 50ns | Synchronous | N-Channel MOSFET | 180mA 260mA | UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||
| IR2101PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 150 ns | 通孔 | 通孔 | 8-DIP (0.300, 7.62mm) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | 活跃 | 1 (Unlimited) | 8 | 通孔 | EAR99 | 1W | 10V~20V | DUAL | 1 | 15V | IR2101PBF | 2 | 620V | 360mA | 15V | 270μA | 1W | 210mA | 270μA | 220 ns | Non-Inverting | 50 ns | 20V | 170ns | 90 ns | 10V | 100ns 50ns | Independent | 0.36A | IGBT, N-Channel MOSFET | 210mA 360mA | YES | 600V | 4.9276mm | 10.8966mm | 7.11mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||
 | IR2130JPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 0.8V 2.2V | 35 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 32 | EAR99 | 75Ohm | Matte Tin (Sn) | 8542.39.00.01 | 2W | 10V~20V | QUAD | J BEND | 1 | 15V | 1.27mm | IR2130JPBF | S-PQCC-J32 | 20V | 500mA | 15V | 3mA | 2W | 200mA | 675 ns | Inverting | 80 ns | 80ns | 35 ns | 80ns 35ns | 3-Phase | 6 | 0.85 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | 150°C | YES | 0.55 μs | 600V | 125°C | 4.57mm | 16.66mm | 16.66mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | ||||||||||||||||||||||
| IRS2184SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 40 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2184SPBF | 2 | 620V | 2.3A | 15V | 1.6mA | 625mW | 1.9A | 1.6mA | 900 ns | Non-Inverting | 90 ns | 60ns | 35 ns | 270 ns | 40ns 20ns | Synchronous | 0.9 μs | IGBT, N-Channel MOSFET | 1.9A 2.3A | 0.4 μs | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||
| IR2233JPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 18 Weeks | 0.8V 2V | 950 ns | 表面贴装 | 表面贴装 | 44-LCC (J-Lead), 32 Leads | 44 | Half-Bridge | 125°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 32 | EAR99 | 100Ohm | Matte Tin (Sn) | 8542.39.00.01 | 2W | 10V~20V | QUAD | J BEND | 3 | 15V | 1.27mm | IR2233JPBF | S-PQCC-J32 | 6 | 20V | 500mA | 15V | 100μA | 2W | 250mA | Inverting | 750 ns | 20V | 150ns | 70 ns | 10V | 700 ns | 90ns 40ns | 3-Phase | 1 μs | 0.5A | IGBT, N-Channel MOSFET | 250mA 500mA | YES | 0.95 μs | 1200V | 4.57mm | 16.66mm | 16.66mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||
 | IR2136SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 3V | 400 ns | 表面贴装 | 表面贴装 | 28-SOIC (0.295, 7.50mm Width) | 28 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 28 | SMD/SMT | EAR99 | 100Ohm | Matte Tin (Sn) | FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT | 8542.39.00.01 | 1.6W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | 1.27mm | IR2136SPBF | 6 | 620V | 350mA | 15V | 1.6mA | 1.6W | 200mA | Inverting | 550 ns | 20V | 190ns | 75 ns | 10V | 380 ns | 125ns 50ns | 3-Phase | 0.55 μs | 0.35A | IGBT, N-Channel MOSFET | 200mA 350mA | YES | 0.55 μs | 600V | 2.35mm | 18.0848mm | 7.5946mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||
 | IR21814SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.7V | 330 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 14 | SMD/SMT | EAR99 | Matte Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IR21814SPBF | 2 | 620V | 2.3A | 15V | 1W | 1.9A | 330 ns | Non-Inverting | 270 ns | 20V | 60ns | 35 ns | 10V | 40ns 20ns | Independent | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.33 μs | 600V | 1.4986mm | 8.7376mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||
| IR21834SPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 26 Weeks | 0.8V 2.7V | 220 ns | 表面贴装 | 表面贴装 | 14-SOIC (0.154, 3.90mm Width) | 14 | Half-Bridge | -40°C~150°C TJ | Tube | 1996 | e3 | 活跃 | 3 (168 Hours) | 14 | SMD/SMT | EAR99 | Tin (Sn) | 1W | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IR21834SPBF | 2 | 620V | 2.3A | 1.6mA | 1W | 1.9A | 1.6mA | 330 ns | Inverting, Non-Inverting | 35 ns | 20V | 60ns | 35 ns | 10V | 40ns 20ns | Independent | 2.3A | IGBT, N-Channel MOSFET | 1.9A 2.3A | YES | 0.33 μs | 600V | 1.4986mm | 8.74mm | 3.99mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||
| IRS2106STRPBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 倍率: 1 | 12 Weeks | 0.8V 2.5V | 30 ns | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | High-Side or Low-Side | -40°C~150°C TJ | Tape & Reel (TR) | 1996 | e3 | 活跃 | 2 (1 Year) | 8 | EAR99 | Matte Tin (Sn) - with Nickel (Ni) barrier | 625mW | 10V~20V | DUAL | 鸥翼 | 1 | 15V | IRS2106SPBF | 10V | 600mA | 15V | 180μA | 625mW | 290mA | 180μA | 300 ns | Non-Inverting | 30 ns | 220ns | 80 ns | 100ns 35ns | 基于缓冲器或反相器的外设驱动器 | Independent | 2 | 0.3 μs | IGBT, N-Channel MOSFET | 290mA 600mA | TRANSIENT; UNDER VOLTAGE | 600V | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 |